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Perovskite solar cell based on 1, 4-diiodotetrafluorobenzene doped hole transport layer and preparation method thereof

A technology of diiodotetrafluorobenzene and hole transport layer, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problem of damaging the charge transport capacity of hole transport layer, increase the defect density of perovskite film, and reduce perovskite Solar cell performance and other issues

Pending Publication Date: 2022-06-03
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently commonly used dopants are lithium bistrifluoromethanesulfonimide (LiTFSI) and 4-tert-butylpyridine (TBP), although the addition of TBP can promote the dissociation of LiTFSI, control the morphology of the film, and increase the current carrying capacity. However, on the one hand, TBP will form a complex with lead iodide to induce the corrosive decomposition of perovskite and increase the defect density of the perovskite film; on the other hand, it will reduce the oxidized spiro-OMeTAD molecules and damage the spiro - Charge-transporting capability of OMeTAD hole-transporting layer, thereby reducing the performance of perovskite solar cells

Method used

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  • Perovskite solar cell based on 1, 4-diiodotetrafluorobenzene doped hole transport layer and preparation method thereof
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Embodiment 1

[0030] 1) Cleaning of the substrate

[0031] The ITO conductive glass substrate was ultrasonically cleaned with acetone, ethanol and deionized water for 15 minutes, and then dried with nitrogen;

[0032] 2) SnO 2 Preparation of electron transport layer

[0033] commercial SnO 2 The aqueous dispersion was diluted with deionized water at a volume ratio of 1:4 to obtain SnO 2 Aqueous dispersion, diluted SnO 2 The concentration of 3 wt%; then static spin coating on the ITO conductive glass substrate obtained in step 1) at 4000 rpm for 30 s, and then annealed at 150 ° C for 20 min to obtain SnO on the ITO conductive glass substrate 2 Electron transport layer with a thickness of 25 nm.

[0034] 3) Preparation of perovskite active layer

[0035] (a) Preparation of active layer solution

[0036] Dissolve 691.5 mg of lead iodide in 1 mL of a mixed solvent with a volume ratio of DMF and DMSO of 9:1, and stir at a stirring speed of 600 rpm for 18 h to obtain a lead iodide solution; ...

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Abstract

The invention discloses a perovskite solar cell based on a 1, 4-diiodotetrafluorobenzene doped hole transport layer and a preparation method thereof, and belongs to the technical field of perovskite solar cells. The perovskite solar cell is composed of an ITO conductive glass substrate, a SnO2 electron transport layer, a perovskite active layer, a phenethyl ammonium iodide surface passivation layer, a spiro-OMeTAD hole transport layer and an Ag electrode. According to the invention, the 1, 4-diiodotetrafluorobenzene is doped into the spiro-OMeTAD hole transport layer, the corrosion of TBP to perovskite is inhibited by using a halogen bond formed between the 1, 4-diiodotetrafluorobenzene and a dopant TBP in the spiro-OMeTAD, and the defect density of the perovskite thin film is reduced. Meanwhile, the spiro-OMeTAD de-doping effect induced by TBP is inhibited, the conductivity of the spiro-OMeTAD thin film is stabilized, and charges can be well transmitted, so that the performance of a perovskite cell device is improved.

Description

technical field [0001] The invention belongs to the technical field of perovskite solar cells, in particular to a perovskite solar cell based on a 1,4-diiodotetrafluorobenzene doped hole transport layer and a preparation method thereof. Background technique [0002] Perovskite solar cells have the advantages of low manufacturing cost, high conversion efficiency, and the ability to fabricate flexible devices, which have attracted extensive attention of researchers. 2 ) as the electron transport layer, with 2,2′,7,7′-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9′-spirobifluorene (spiro-OMeTAD) as the Positive-type perovskite solar cells with hole transport layers have been widely studied for their high efficiency. The intrinsic conductivity and carrier mobility of pure spiro-OMeTAD are very low, so dopants are required to enhance their electrical properties. At present, the commonly used dopants are lithium bistrifluoromethanesulfonimide (LiTFSI) and 4-tert-butylpyridine (TBP), a...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/42H01L51/46
CPCH10K85/60H10K85/624H10K30/10H10K30/00Y02E10/549
Inventor 郭文滨吴尉任冠华刘春雨韩文斌李卓伟沈亮
Owner JILIN UNIV