Perovskite solar cell based on 1, 4-diiodotetrafluorobenzene doped hole transport layer and preparation method thereof
A technology of diiodotetrafluorobenzene and hole transport layer, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problem of damaging the charge transport capacity of hole transport layer, increase the defect density of perovskite film, and reduce perovskite Solar cell performance and other issues
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Embodiment 1
[0030] 1) Cleaning of the substrate
[0031] The ITO conductive glass substrate was ultrasonically cleaned with acetone, ethanol and deionized water for 15 minutes, and then dried with nitrogen;
[0032] 2) SnO 2 Preparation of electron transport layer
[0033] commercial SnO 2 The aqueous dispersion was diluted with deionized water at a volume ratio of 1:4 to obtain SnO 2 Aqueous dispersion, diluted SnO 2 The concentration of 3 wt%; then static spin coating on the ITO conductive glass substrate obtained in step 1) at 4000 rpm for 30 s, and then annealed at 150 ° C for 20 min to obtain SnO on the ITO conductive glass substrate 2 Electron transport layer with a thickness of 25 nm.
[0034] 3) Preparation of perovskite active layer
[0035] (a) Preparation of active layer solution
[0036] Dissolve 691.5 mg of lead iodide in 1 mL of a mixed solvent with a volume ratio of DMF and DMSO of 9:1, and stir at a stirring speed of 600 rpm for 18 h to obtain a lead iodide solution; ...
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