Combined focusing ring

Abstract

The present invention relates to a coupled focus ring in which a plurality of focus rings are separated and assembled, whereby only a portion exposed to plasma to cause etching consumption can be replaced, the coupled focus ring being characterized by comprising: an upper plasma exposure ring placed on the upper outside of an electrostatic chuck; a lower heat-conducting support ring attached to the lower part of the upper plasma exposure ring; the combination ring is assembled on the outer side of the lower heat conduction supporting ring; a first coupling part that couples the upper plasma exposure ring and the lower heat-conducting support ring; and a second coupling part that couples the upper plasma exposure ring and the coupling ring.

Description

technical field [0001] The present invention relates to a combined type focus ring, and more particularly, to a combined type focus ring in which only a portion of the focus ring that is exposed to plasma and is etched and consumed can be replaced by assembling a plurality of focus rings. Background technique [0002] In general, an etching technique used for manufacturing a semiconductor is a technique for processing a film formed on a semiconductor substrate into a desired pattern, and an apparatus used for such processing is an etching apparatus. [0003] In particular, among etching apparatuses, an etching apparatus that forms a pattern using plasma is referred to as a plasma etching apparatus or a dry etching apparatus, and such a dry etching apparatus is mainly used for a design rule that requires 0.15 μm or less. Technology. [0004] figure 1 A general dry etching apparatus is shown, which includes an electrostatic chuck 11 on which a wafer W is placed inside the pr...

AI Technical Summary

Problems solved by technology

[0010] In the case of the focus ring of such conventional patent document 1, the outer ring and the inner ring are separated and assembled in the vertical direction, so that a gap (gap) occurs at the part assembled separately, and the temperature transfer rate between the inner and outer sides is reduced by the gap. Differential, arcing problems when polymer is applied through the gap between the outer and inner rings

[0011] In addition, a potential difference of the plasma occurs through the separation gap of the outer ring and the inner ring, thereby causing a problem in wafer edge yield by the change of the plasma sheath

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