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Electron beam irradiation device and electron beam irradiation method

An electron beam and irradiation device technology, which is applied to the electron beam irradiation device and the field of electron beam irradiation, and can solve problems such as the influence of drawing accuracy

Pending Publication Date: 2022-06-17
NUFLARE TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the resist on the sample is exposed to light, it will affect the drawing accuracy

Method used

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  • Electron beam irradiation device and electron beam irradiation method
  • Electron beam irradiation device and electron beam irradiation method
  • Electron beam irradiation device and electron beam irradiation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0109] figure 1 It is a conceptual diagram showing the structure of the drawing apparatus in Embodiment 1. FIG. exist figure 1 Among them, the drawing device 100 includes a drawing mechanism 150 and a control circuit 160 . The drawing apparatus 100 is an example of a multi-electron beam drawing apparatus. In the drawing mechanism 150 , a laser light source 201 as an excitation light source, a laser adjustment mechanism 238 , and an illumination optical system 202 such as a beam expander are arranged in the lens barrel 104 . The excitation light source may be not only a laser light source but also an appropriate light source such as an LED or a lamp. In addition, in the drawing mechanism 150, the photoelectron discharge mechanism 210 and the multi-anode are sequentially arranged in the lens barrel 102 (multi-electron beam column) which is spaced apart from the lens barrel 104 by the partition window 11 so as to be able to transmit light and is kept in a vacuum. Electrodes 2...

Embodiment approach 2

[0181] In Embodiment 2, a configuration in which the transmitted light 13 is reduced on the upstream side of the blanking aperture array mechanism 204 will be described. Hereinafter, the points that are not particularly described are the same as those of the first embodiment.

[0182] Figure 16 It is a conceptual diagram which shows the structure of the drawing apparatus in Embodiment 2. FIG. exist Figure 16 , except that the electromagnetic lens 222 , the second limiting aperture substrate 227 , and the electromagnetic lens 224 are arranged between the multi-anode electrode 220 and the shaped aperture array substrate 203 , and the driving circuit 236 is further arranged to drive the second limiting aperture. Except for the drive mechanism (drive circuit) 233 of the substrate 227, andfigure 1 same. Alternatively, you can keep the configuration figure 1 The state of the drive mechanism 236 shown is unchanged.

[0183] The electromagnetic lens 222 and the electromagnetic ...

Embodiment approach 3

[0189] In Embodiment 3, a configuration in which the intensity of transmitted light is reduced by shifting the orbit of the multiphoton beam 20 will be described.

[0190] Figure 17 It is a conceptual diagram which shows the structure of the drawing apparatus in Embodiment 3. FIG. exist Figure 17 In addition to the point where alignment coils 226 and 228 are arranged between the multi-anode electrode 220 and the shaped aperture array substrate 203, the shaped aperture array substrate 203, the blanking aperture array mechanism 204, the electromagnetic lens 205, the first limiting aperture substrate 206. Except for the point where the positions of the electromagnetic lens 207 (objective lens) and the central axis of the objective lens deflector 208 are shifted, and the arrangement of the driving mechanism (driving circuit) 236 is omitted, the same figure 1 same. Alternatively, you can keep the configuration figure 1 The state of the drive mechanism 236 shown is unchanged. ...

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PUM

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Abstract

One embodiment of the present invention provides an electron beam irradiation device and an electron beam irradiation method capable of reducing transmission light reaching a sample surface during electron beam irradiation. An electron beam irradiation device according to one embodiment of the present invention is provided with: a photoelectric surface which receives irradiation of excitation light on the front surface side and generates a plurality of electron beams from the back surface side; a blanking aperture array mechanism in which passing holes corresponding to the plurality of electron beams are formed, respectively, and which performs deflection control on the plurality of electron beams passing through the passing holes; and an adjustment mechanism that adjusts at least one of a trajectory of the transmitted light and a trajectory of the plurality of electron beams. The transmitted light is transmitted light among the irradiated excitation light, which passes through at least one of an arrangement including the photoelectric surface up to the stage, the blanking aperture array mechanism, and the aperture limiting substrate, and reaches the stage, and the arrangement shields at least a portion of the transmitted light.

Description

[0001] 【Related application】 [0002] This application enjoys priority based on Japanese Patent Application No. 2020-207701 (filing date: December 15, 2020). The present application includes the entire contents of the basic application by reference to this basic application. technical field [0003] One aspect of the present invention relates to an electron beam irradiation apparatus and an electron beam irradiation method. For example, it relates to a multi-electron beam drawing apparatus and a multi-electron beam drawing method. Background technique [0004] Photolithography, which is responsible for the progress of miniaturization of semiconductor devices, is an extremely important process for generating a unique pattern in a semiconductor manufacturing process. In recent years, along with the high integration of LSIs, the circuit line width required for semiconductor devices has been reduced year by year. Here, the electron beam (electron beam) drawing technique has s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20H01L21/027
CPCG03F7/70375G03F7/70558G03F7/2059H01L21/0277H01J37/3007H01J2237/0435H01J37/3177H01J37/073H01J2237/06333H01J37/1472H01J37/09H01J37/045
Inventor 山田拓岩崎光太
Owner NUFLARE TECH INC