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Gas pressure sensor, preparation method thereof and gas pressure detection method

A gas pressure and detection method technology, applied in the field of sensors, can solve the problems of reduced effective area of ​​sensing functional units, reduced measurement accuracy and measurement range, reduced probability of collision between electrons and gas, etc., and achieves low power consumption and characteristic size. The effect of small, wide measuring range

Active Publication Date: 2022-06-21
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently commonly used thermal resistance, capacitive film and ionization gas pressure sensors are limited in the process of miniaturization and integration
For example, the miniaturization of the thermal resistance air pressure sensor and the capacitive film air pressure sensor will reduce the effective area of ​​the sensing functional unit (respectively, the hot wire and the capacitive film), resulting in a sharp drop in measurement accuracy and measurement range
Reducing the volume of the ionization air pressure sensor will reduce the probability of electrons colliding with the gas, which will lead to the inability to realize air pressure detection

Method used

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  • Gas pressure sensor, preparation method thereof and gas pressure detection method
  • Gas pressure sensor, preparation method thereof and gas pressure detection method
  • Gas pressure sensor, preparation method thereof and gas pressure detection method

Examples

Experimental program
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Embodiment 1

[0038] like Figure 1 to Figure 2Shown is a first embodiment of a gas pressure sensor, including a substrate 1, an insulating layer 2, a two-dimensional material layer 3 and two electrodes 4, the insulating layer 2 is stacked on the substrate 1, and the insulating layer 2 is fabricated on the There is a groove, two electrodes 4 are arranged on the side of the insulating layer 2 away from the substrate 1 and are respectively located on both sides of the groove, the two-dimensional material layer 3 is suspended above the groove and the two ends are respectively connected with the two electrodes 4, The two-dimensional material layer 3 is configured with a first bias voltage through two electrodes 4, and a second bias voltage is configured between the substrate 1 and any one of the two electrodes 4 to generate a direction from the substrate 1 to the two-dimensional material layer. 3 of the vertical electric field.

[0039] The groove in this embodiment can increase the contact ar...

Embodiment 2

[0051] The difference between this embodiment and Embodiment 1 is only that the thickness of the two-dimensional material layer 3 in this embodiment is 5 nm, and the area of ​​the upper surface of the two-dimensional material layer 3 is 150 μm 2 ; The length of the trench is 1 nm, the width is 4 μm, and the depth is 500 nm; the thickness of the insulating layer 2 is 500 nm.

Embodiment 3

[0053] The difference between this embodiment and Embodiment 1 or Embodiment 2 is only that the thickness of the two-dimensional material layer 3 in this embodiment is 7 nm, the area of ​​the upper surface of the two-dimensional material layer 3 is 200 μm 2 , and the length of the groove is 1.5 nm. , the width is 6 μm, the depth is 500 nm; the thickness of the insulating layer 2 is 700 nm.

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Abstract

The invention discloses a gas pressure sensor, a preparation method thereof and a gas pressure detection method. The gas pressure sensor comprises a substrate, an insulating layer, a two-dimensional material layer and two electrodes, the insulating layer is stacked on the substrate, a groove is formed in the insulating layer, the two electrodes are arranged on the side, away from the substrate, of the insulating layer and located on the two sides of the groove respectively, the two-dimensional material layer is suspended above the groove, and the two ends of the two-dimensional material layer are connected with the two electrodes respectively. The two-dimensional material layer is configured with a first bias voltage through the two electrodes, and a second bias voltage is configured between the substrate and any electrode. When the device is exposed in a gas environment, the upper surface and the lower surface of the suspended two-dimensional material adsorb gas molecules, so that the conductivity is influenced; the conductivity of the device under different air pressures can be obtained by configuring two bias voltages, and then the ambient air pressure is reflected. The gas pressure intensity sensor is of an on-chip integrated structure and has the advantages of being miniature, low in power consumption, wide in measuring range and simple in structure.

Description

technical field [0001] The invention belongs to the technical field of sensors, and more particularly, relates to a gas pressure sensor, a preparation method thereof, and a gas pressure detection method. Background technique [0002] Gas pressure sensors are the core components for gas pressure measurement, and are widely used in electronic information equipment, aerospace equipment, and surface science analysis equipment. Miniaturization, high precision, ultra-low power consumption, high reliability, and wide range are the development trends of barometric pressure measurement devices and equipment; especially in special application fields such as deep space exploration and near space exploration, as well as gyroscopes, micro-accelerometers, etc. In vacuum-packaged MEMS devices, the constraints of volume, power consumption and reliability on air pressure measurement devices are more obvious. The gas pressure sensor developed by micro-nano processing technology has the advan...

Claims

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Application Information

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IPC IPC(8): G01L9/02G03F7/20
CPCG01L9/02G03F7/2022G03F7/2024Y02A50/20
Inventor 佘峻聪谢海涛邓少芝许宁生陈军
Owner SUN YAT SEN UNIV
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