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Covering process of upper cladding of optical waveguide device

A technology of optical waveguide and cladding, applied in the direction of optical waveguide light guide, light guide, optical components, etc., can solve the problems affecting waveguide performance and defects, and achieve the effect of avoiding scattering loss

Pending Publication Date: 2022-06-21
杭州芯傲光电有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Aiming at the problem that the seams and gaps in the existing preparation process affect the performance of the waveguide, the present invention provides an upper cladding covering process of the optical waveguide device, so as to avoid the gaps and / or seams caused by the upper cladding material during the deposition process. The product is defective

Method used

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  • Covering process of upper cladding of optical waveguide device
  • Covering process of upper cladding of optical waveguide device

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Experimental program
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Embodiment 1

[0028] The upper cladding process of the optical waveguide device in this embodiment, such as figure 2 A to figure 2 D, including:

[0029] Step 1, on the surface of the lower cladding layer 202 located on the substrate 201, chemical deposition to obtain a waveguide core layer film, photolithography, etching the waveguide core layer film, on the surface of the lower cladding layer 202 to obtain two optical waveguides arranged at intervals The core layer 203; the adopted substrate 201 structure with the lower cladding layer 202 can be obtained by wet oxidation of the substrate 201 layer, and the reaction formula is Si+2H 2 O→SiO 2 +2H 2 The substrate 201 is monocrystalline silicon with a thickness of 500 microns; the lower cladding layer 202 is silicon dioxide with a thickness of 3 microns; the adjacent optical waveguide core layer 203 is made of silicon nitride, with the same cross section and is a rectangle with a width of 1.2 microns and a height of 800 nanometers, and...

Embodiment 2

[0035] The upper cladding process of the optical waveguide device in this embodiment, such as figure 2 A to figure 2 D, including:

[0036] Step 1, on the surface of the lower cladding layer 202 located on the substrate 201, chemical deposition to obtain a waveguide core layer film, photolithography, etching the waveguide core layer film, on the surface of the lower cladding layer 202 to obtain a plurality of optical waveguides arranged at intervals The core layer 203; the substrate 201 structure with the lower cladding layer 202 is adopted, which can be obtained by purchasing on the market or by dry oxidation of the substrate 201 layer, and the reaction formula is Si+O 2 →SiO 2 The substrate 201 is monocrystalline silicon with a thickness of 200 microns; the lower cladding layer 202 is silicon dioxide with a thickness of 3 microns, and the adjacent optical waveguide core layer 203 is made of silicon nitride, with the same cross section and is a rectangle with a width of ...

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Abstract

The invention relates to an upper cladding covering process of an optical waveguide device, belongs to the field of optical waveguide devices, and aims to solve the problem that the waveguide performance is influenced by seams and gaps generated in the existing preparation process, and adopts the technical scheme that the upper cladding covering process of the optical waveguide device comprises the following steps: step 1, obtaining an optical waveguide core layer on the surface of a lower cladding positioned on a substrate; step 2, depositing an upper cladding layer on the surfaces of the lower cladding layer and the optical waveguide core layer to obtain a pretreatment piece; step 3, heating the pretreatment piece until the upper cladding is in a molten state, preserving heat for 10 minutes to 12 hours, and then cooling to room temperature; and 4, the deposition and the heat treatment are repeated until the space between the adjacent optical waveguide core layers is filled with the upper cladding, and the final thickness of the upper cladding reaches 100 nanometers to 100 microns. The upper cladding layer is silicon dioxide or silicon nitride and is obtained through alternate circulation of deposition and backflow, gaps or joints are eliminated, and scattering loss caused by defects and deviation which is not matched with the design are effectively avoided.

Description

technical field [0001] The invention belongs to the field of optical waveguide devices, and particularly relates to an upper cladding layer covering process of the optical waveguide device. Background technique [0002] In the preparation of the waveguide structure of the integrated optical chip, for the device with the waveguide core layer structure with high aspect ratio, the upper cladding process requires the complete filling of the interval between the waveguide core layers to ensure the structural integrity and stable performance, but this is The challenges faced by those skilled in the art at present, the specific reasons are as follows: figure 1 A to figure 1 C shows the existing process of overlaying the upper cladding on the non-planar surfaces of the lower cladding and core layers, figure 1 A is a schematic cross-sectional view of the existing waveguide structure, wherein 101 is the substrate layer, 102 is the lower cladding layer, and 103 is the waveguide core ...

Claims

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Application Information

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IPC IPC(8): G02B6/132G02B6/13
CPCG02B6/132G02B6/13G02B2006/12166
Inventor 叶志超刘骏秋贾海燕
Owner 杭州芯傲光电有限公司