Hybrid bonding structure and manufacturing method thereof
A technology of bonding structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., and can solve the problem of metal atoms diffusing into interlayer dielectric layers, etc.
Pending Publication Date: 2022-07-12
UNITED MICROELECTRONICS CORP
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[0044] Figures 1 to 5A It is an air gap fabrication process according to the first preferred embodiment of the present invention. Figure 5B It is a modification of the air gap fabrication process of the first preferred embodiment of the present invention. Figure 5C It is another variation of an air gap fabrication process of the first preferred embodiment of the present invention. like figure 1 As shown, a first dielectric layer 10 is provided, the first dielectric layer 10 may be disposed on a substrate (not shown), the substrate may include several interlayer dielectric layers, and the interlayer dielectric layer Metal interconnects have been formed. The substrate can be a silicon substrate, a germanium substrate, a gallium arsenide substrate, a silicon germanium substrate, an indium phosphide substrate, a gallium nitride substrate, a silicon carbide substrate, or a silicon-on-insulator substrate. In addition, the substrate may be an uncut wafer, a circuit board, an i...
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Abstract
A hybrid bonding structure includes a first conductive structure including a first conductive layer, a first buffer layer surrounding and contacting the first conductive layer, and a second conductive structure including a second buffer layer surrounding and contacting the second conductive layer. The first conductive structure includes a first buffer layer and a first dielectric layer, a first air gap surrounding and contacting the first buffer layer and a first dielectric layer surrounding and contacting the first air gap, the second conductive structure includes a second conductive layer, a second buffer layer contacting the second conductive layer, a second dielectric layer surrounding the second buffer layer, the first dielectric layer and the second dielectric layer are bonded.
Description
technical field [0001] The invention relates to a hybrid bonding structure and a manufacturing method thereof, in particular to a hybrid bonding structure and a manufacturing method thereof in which metal atoms are diffused into an interlayer dielectric layer when wafer alignment deviation is avoided. Background technique [0002] In recent years, the level of integration of various electronic components has continued to increase. On the one hand, the increase in integration density has come from the continued reduction in minimum feature size, enabling more smaller components to be integrated into a given area. In addition, forming a three-dimensional integrated circuit by stacking and bonding multi-layer wafers is also another method to increase the integration of components. It can be achieved by bonding between metal materials, or by a method combining the two aforementioned bonding mechanisms. [0003] However, there are still many challenges to be addressed for 3D int...
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IPC IPC(8): H01L23/488H01L21/60
CPCH01L24/11H01L24/13H01L2224/111H01L2224/1147H01L2224/13005H01L2224/13014H01L2224/13019H01L2224/80894H01L24/80H01L24/05H01L24/08H01L2224/05571H01L2224/08145H01L23/3157H01L2224/05547H01L2224/80895H01L2224/80896H01L2224/94H01L2224/80357H01L2224/80365H01L2224/80379H01L2224/0807H01L2224/08225H01L2224/08121H01L2224/08057H01L2224/0346H01L2224/03616H01L2924/00014H01L2224/80001H01L24/03H01L2224/05026H01L2224/03831H01L2224/05011
Inventor 杨柏宇
Owner UNITED MICROELECTRONICS CORP