Method, device and equipment for detecting leakage of capacitor of memory cell array and medium

Abstract

The application provides a capacitor leakage detection method, device, equipment and medium, and relates to the technical field of storage. The method comprises the following steps: acquiring first change correlation information of a capacitor retention time of a to-be-detected storage capacitor and a word line voltage of a to-be-detected word line, wherein the word line voltage of the to-be-detected word line changes in a preset voltage range including a word line off voltage, and when the first change correlation information meets a first abnormality determination condition, it is determined that a leakage behavior of the to-be-detected storage capacitor is related to the to-be-detected word line; or acquiring second change correlation information of the capacitor retention time of the to-be-detected storage capacitor and a word line voltage of a neighboring word line, wherein the word line voltage of the neighboring word line changes in the preset voltage range, and when the second change correlation information meets a second abnormality determination condition, it is determined that the leakage behavior of the to-be-detected storage capacitor is related to the neighboring word line. According to the embodiment of the application, fine detection of the capacitor leakage behavior can be realized.

Description

Technical Field

[0001] This application relates to the field of storage technology, and in particular to a method, apparatus, device and medium for detecting capacitor leakage current in a storage cell array. Background Technology

[0002] In the field of storage technology, leakage current in storage capacitors often affects the performance of memory. Therefore, how to detect capacitor leakage current has become an urgent problem to be solved.

[0003] Current leakage detection technology for storage capacitors can roughly detect whether a storage capacitor is leaking, but it cannot accurately detect the specific location of the leakage.

[0004] It should be noted that the information disclosed in the background section above is only used to enhance the understanding of the background of this application, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention

[0005] This application provides a method, apparatus, device, and medium for detecting capacitor leakage current in a memory cell array, which at least to some extent overcomes the problem in related technologies that cannot perform precise detection of capacitor leakage current behavior.

[0006] Other features and advantages of this application will become apparent from the following detailed description, or may be learned in part from practice of this application.

[0007] According to one aspect of this application, a method for detecting capacitor leakage current in a memory cell array is provided. The memory cell array includes multiple memory cells. Each memory cell includes a memory cell to be detected, the storage capacitor of the memory cell to be detected is the storage capacitor to be detected, the word line used to control the storage capacitor to be detected is the word line to be detected, and the word line adjacent to the storage capacitor to be detected is the adjacent word line, wherein different voltages are applied to the word line to be detected and the adjacent word line. The method includes: when fixing the word line voltage of adjacent word lines, acquiring first change correlation information between the capacitance holding time of the storage capacitor to be tested and the word line voltage of the word line to be tested, wherein the word line voltage of the word line to be tested varies within a preset voltage range including the word line turn-off voltage; when the first change correlation information satisfies a first anomaly determination condition, determining that the leakage behavior of the storage capacitor to be tested is related to the word line to be tested; or, when fixing the word line voltage of the word line to be tested, acquiring second change correlation information between the capacitance holding time of the storage capacitor to be tested and the word line voltage of adjacent word lines, wherein the word line voltage of the adjacent word lines varies within a preset voltage range including the word line turn-off voltage; when the second change correlation information satisfies a second anomaly determination condition, determining that the leakage behavior of the storage capacitor to be tested is related to the adjacent word line.

[0008] In one embodiment, when fixing the word line voltage of adjacent word lines, obtaining the first change correlation information between the capacitance hold-up time of the storage capacitor to be tested and the word line voltage of the word line to be tested includes: controlling the word line voltage of adjacent word lines to be fixed at the word line off voltage; adjusting the word line voltage of the word line to be tested within a preset voltage range; obtaining the capacitance hold-up time of the storage capacitor to be tested corresponding to the word line voltage of the word line to be tested after each adjustment; and determining the first change correlation information based on the word line voltage of the word line to be tested after each adjustment and the corresponding capacitance hold-up time of the storage capacitor to be tested.

[0009] In one embodiment, when fixing the word line voltage of the word line to be tested, obtaining second change correlation information between the capacitance hold-up time of the storage capacitor to be tested and the word line voltage of adjacent word lines includes: controlling the word line voltage of the word line to be tested to be fixed at the word line off voltage; adjusting the word line voltage of adjacent word lines within a preset voltage range; obtaining the capacitance hold-up time of the storage capacitor to be tested corresponding to the word line voltage of the adjacent word lines after each adjustment; and determining the second change correlation information based on the word line voltage of the adjacent word lines after each adjustment and the corresponding capacitance hold-up time of the storage capacitor to be tested.

[0010] In one embodiment, the first anomaly determination condition includes that the first change correlation information and the first reference change correlation information are not correlated; before determining that the leakage behavior of the storage capacitor to be detected is related to the word line to be detected, the method further includes: determining whether the first change correlation information and the first reference change correlation information are correlated, wherein the first reference change correlation information is the correlation information between the capacitance retention time of the storage capacitor to be detected and the word line voltage of the word line to be detected under normal conditions; if the first change correlation information and the first reference change correlation information are not correlated, determining that the first change correlation information satisfies the first anomaly determination condition.

[0011] In one embodiment, the first anomaly determination condition includes that the change parameter of the first change-related information is greater than or equal to a preset parameter threshold; before determining that the leakage behavior of the storage capacitor to be detected is related to the word line to be detected, the method further includes: obtaining the change parameter of the first change-related information, the change parameter of the first change-related information being used to characterize the degree of change of the first change-related information; and determining that the first change-related information satisfies the first anomaly determination condition when the change parameter of the first change-related information is greater than or equal to the preset parameter threshold.

[0012] In one embodiment, the second anomaly determination condition includes that the second change correlation information and the second baseline change correlation information are not correlated;

[0013] Before determining whether the leakage behavior of the storage capacitor under test is related to adjacent word lines, the method further includes:

[0014] Determine whether the second change correlation information is correlated with the second reference change correlation information, wherein the second reference change correlation information is the correlation information between the capacitance retention time of the storage capacitor to be detected and the word line voltage of the adjacent word line under normal conditions;

[0015] If the second change-related information is not correlated with the second baseline change-related information, the second change-related information is determined to meet the second anomaly determination condition.

[0016] In one embodiment, the second anomaly determination condition includes that the change parameter of the second change-related information is greater than or equal to a preset parameter threshold; before determining that the leakage behavior of the storage capacitor to be detected is related to the adjacent word line, the method further includes: obtaining the change parameter of the second change-related information, the change parameter of the second change-related information being used to characterize the degree of change of the second change-related information; and determining that the second change-related information satisfies the second anomaly determination condition when the change parameter of the second change-related information is greater than or equal to the preset parameter threshold.

[0017] In one embodiment, the variation parameters include: the rate of change, and / or, the maximum difference in capacitance hold time.

[0018] In one embodiment, before obtaining the first change correlation information or the second change correlation information, the method further includes: obtaining third change correlation information between the capacitance holding time of the storage capacitor to be detected and the base voltage, wherein the base voltage is the base voltage of the storage cell to be detected; determining whether the third change correlation information meets the third anomaly determination condition; and determining that the third change correlation information does not meet the third anomaly determination condition.

[0019] In one embodiment, the upper threshold of the preset voltage range is equal to the sum of the word line shutdown voltage and the maximum allowable differential voltage; and / or, the lower threshold of the preset voltage range is equal to the difference between the word line shutdown voltage and the maximum allowable differential voltage.

[0020] In one embodiment, the maximum allowable differential pressure is determined based on the distance between the word line to be detected and the adjacent word lines.

[0021] In one embodiment, before obtaining the first change association information or the second change association information, the method further includes: obtaining the distance between the character line to be detected and the adjacent character lines; and determining that the distance is less than a preset character line distance threshold.

[0022] In one embodiment, the distance is less than or equal to 45 nanometers.

[0023] According to another aspect of this application, a capacitor leakage detection device for a memory cell array is provided, characterized in that the memory cell array includes a plurality of memory cells; the memory cell includes a memory cell to be detected, the storage capacitor of the memory cell to be detected is the storage capacitor to be detected, the word line used to control the storage capacitor to be detected is the word line to be detected, and the word line adjacent to the storage capacitor to be detected is the adjacent word line, wherein different voltages are applied to the word line to be detected and the adjacent word line; the capacitor leakage detection device includes: a first information acquisition module, used to acquire, when fixing the word line voltage of the adjacent word line, first change correlation information between the capacitance holding time of the storage capacitor to be detected and the word line voltage of the word line to be detected, wherein the word line of the word line to be detected... The voltage varies within a preset voltage range, including the word line turn-off voltage; a first leakage detection module is used to determine that the leakage behavior of the storage capacitor under test is related to the word line under test when the first change correlation information meets the first anomaly determination condition; or, a second information acquisition module is used to acquire second change correlation information between the capacitance holding time of the storage capacitor under test and the word line voltage of adjacent word lines when the word line voltage of the word line under test is fixed, wherein the word line voltage of adjacent word lines varies within a preset voltage range, including the word line turn-off voltage; the second leakage detection module is used to determine that the leakage behavior of the storage capacitor under test is related to the adjacent word line when the second change correlation information meets the second anomaly determination condition.

[0024] According to another aspect of this application, an electronic device is provided, comprising: a processor; and a memory for storing executable instructions of the processor; wherein the processor is configured to perform the capacitor leakage detection method of the memory cell array described above by executing the executable instructions.

[0025] According to another aspect of this application, a computer-readable storage medium is provided, on which a computer program is stored, which, when executed by a processor, implements the above-described method for detecting capacitor leakage current in a storage cell array.

[0026] The capacitor leakage detection method, apparatus, device, and medium provided in this application embodiment, by fixing the word line voltage of adjacent word lines and allowing the word line voltage of the word line to be detected to vary within a preset voltage range including the word line turn-off voltage, can obtain first change correlation information between the capacitance hold-up time of the storage capacitor to be detected and the word line voltage of the word line to be detected. Since capacitor leakage affects the capacitance hold-up time, when the first change correlation information satisfies the first anomaly determination relationship, it can be determined that the capacitance hold-up time of the storage capacitor to be detected is abnormal, that is, the leakage of the storage capacitor to be detected is caused by the word line to be detected. Alternatively, by fixing the word line voltage of the word line to be detected and allowing the word line voltage of adjacent word lines to vary within a preset voltage range, second change correlation information between the capacitance hold-up time of the storage capacitor to be detected and the word line voltage of adjacent word lines can be obtained. If the second change correlation information satisfies the second anomaly determination condition, it can be determined that the leakage behavior of the storage capacitor to be detected is related to the adjacent word lines. Thus, the capacitor leakage anomaly can be located to the word line to be detected or adjacent word lines, achieving precise detection of capacitor leakage behavior.

[0027] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit this application. Attached Figure Description

[0028] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. It is obvious that the drawings described below are merely some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort.

[0029] Figure 1 A schematic diagram of a storage cell array is shown.

[0030] Figure 2 A schematic diagram of a storage cell structure is shown;

[0031] Figure 3 A schematic diagram of a semiconductor structure is shown;

[0032] Figure 4 It shows Figure 3 The diagram shows a cross-sectional view of the semiconductor structure along the AA direction.

[0033] Figure 5 A schematic diagram showing the change of charge on a storage capacitor over time is shown.

[0034] Figure 6 A schematic diagram of the operation of a differential amplifier is shown;

[0035] Figure 7 A schematic diagram of a semiconductor structure is shown;

[0036] Figure 8 A schematic diagram of a semiconductor structure provided in an embodiment of this application is shown;

[0037] Figure 9 This illustration shows a voltage control schematic diagram of a semiconductor structure provided in an embodiment of this application;

[0038] Figure 10 A circuit diagram of a semiconductor memory cell is shown;

[0039] Figure 11 This paper shows a flowchart of a capacitor leakage detection method according to an embodiment of the present application;

[0040] Figure 12 A schematic diagram of a preset voltage range provided in an embodiment of this application is shown;

[0041] Figure 13 This invention provides a schematic diagram illustrating the relationship between the capacitance retention time and voltage of a storage capacitor to be detected.

[0042] Figure 14 This paper presents a schematic diagram showing the relationship between the word line voltage of a word line to be detected and the capacitance retention time of a storage capacitor to be detected, according to an embodiment of this application.

[0043] Figure 15 This paper presents a schematic diagram showing the relationship between the word line voltage of the word line to be detected and the capacitance retention time of the storage capacitor to be detected, according to another embodiment of this application.

[0044] Figure 16 A schematic diagram showing the relationship between the capacitance retention time and voltage of a storage capacitor when the above-mentioned problems exist is shown.

[0045] Figure 17 This illustration shows a word line connection diagram of an exemplary storage cell array provided in an embodiment of this application;

[0046] Figure 18 A flowchart illustrating another capacitor leakage detection method provided in an embodiment of this disclosure is shown;

[0047] Figure 19 This diagram illustrates a capacitor leakage detection device according to an embodiment of this application.

[0048] Figure 20 This illustration shows a schematic diagram of another capacitor leakage detection device in an embodiment of this application;

[0049] Figure 21 This is a schematic diagram of the structure of a computer device according to an exemplary embodiment; and

[0050] Figure 22 This is a schematic diagram illustrating a readable storage medium according to an exemplary embodiment. Detailed Implementation

[0051] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, they are provided to make this application more comprehensive and complete, and to fully convey the concept of the exemplary embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0052] Furthermore, the accompanying drawings are merely illustrative of this application and are not necessarily drawn to scale. The same reference numerals in the drawings denote the same or similar parts, and therefore repeated descriptions of them will be omitted. Some block diagrams shown in the drawings are functional entities and do not necessarily correspond to physically or logically independent entities. These functional entities can be implemented in software, in one or more hardware modules or integrated circuits, or in different network and / or processor devices and / or microcontroller devices.

[0053] It should be understood that the steps described in the method embodiments of this application may be performed in different orders and / or in parallel. Furthermore, the method embodiments may include additional steps and / or omit the steps shown. The scope of this application is not limited in this respect.

[0054] It should be noted that the concepts of "first" and "second" mentioned in this application are only used to distinguish different devices, modules or units, and are not used to limit the order of functions performed by these devices, modules or units or their interdependencies.

[0055] It should be noted that the terms "a" and "a plurality of" used in this application are illustrative rather than restrictive, and those skilled in the art should understand that, unless otherwise expressly indicated in the context, they should be understood as "one or more".

[0056] Memory, such as volatile memory like Dynamic Random Access Memory (DRAM), includes at least one array of memory cells. Figure 1 A schematic diagram of a memory cell array is shown. Figure 1 As shown, the storage cell array 10 may include M word lines WL0 to WL0. M-1 N bit lines (BL) BL0 to BLN-1 , and multiple storage units 11. Where M and N are both integers greater than or equal to 2.

[0057] For storage unit 11, Figure 2 A schematic diagram of a storage cell structure is shown. For example... Figure 2 As shown, the storage unit 11 may include an access transistor MA and a storage capacitor C.

[0058] The storage transistor MA can be an N-channel (NCN) transistor, such as an NPN transistor or an N-type metal-oxide-semiconductor (NMOS) transistor. The gate of the storage transistor MA is connected to the word line WL, the drain is connected to the bit line BL, and the source is connected to the storage capacitor C.

[0059] A storage capacitor C stores a charge that represents the data stored in the storage cell. For example, if the capacitance of the storage capacitor C is greater than 50%, the data stored in the storage cell is considered to be "1". Conversely, if the capacitance is less than 50%, the data stored in the storage cell is considered to be "0".

[0060] After providing a preliminary introduction to memory cell arrays from a circuit perspective, we will now explain memory cell arrays from a semiconductor structure perspective.

[0061] For the semiconductor structure corresponding to the memory cell array, please refer to [the relevant documentation / reference]. Figure 3 and Figure 4 Please provide an explanation. Figure 3 A schematic diagram of a semiconductor structure is shown. Figure 4 It shows Figure 3 The diagram shows a cross-sectional view of the semiconductor structure along the AA direction.

[0062] like Figure 3 As shown, the semiconductor structure may include multiple word lines WL and multiple bit lines BL, as well as multiple memory cells ( Figure 3 (not shown), wherein each memory cell includes a memory capacitor, such as memory capacitor 17-a or 17-b.

[0063] like Figure 4 As shown, the semiconductor structure may include a substrate 11, a word line layer 12, an isolation layer 13, a bit line layer 14, a bit line contact region 15, a doped region 16, a storage capacitor 17, and a capacitor contact region 18.

[0064] In one example, the ion implantation type of substrate 11 is P-type, and correspondingly, substrate 11 can be a P-well. The ion implantation type of doped layer 16 is N-type heavily doped implantation, and correspondingly, doped region 16 can be an N-type heavily doped region. The isolation layer 13 can be a shallow trench isolation (STI) layer.

[0065] After a preliminary introduction to the semiconductor structure of memory cell arrays, please continue reading... Figure 2 The working process of the storage transistor is explained.

[0066] Specifically, when a word line turn-on voltage is applied to the word line WL, the drain and source of the storage transistor MA are turned on, thereby connecting the storage capacitor C and the bit line BL. At this time, the voltage on the bit line BL can be used to store energy in the storage capacitor C. Conversely, when a word line turn-off voltage is applied to the word line WL, the drain and source of the storage transistor MA are not turned on. Correspondingly, the storage capacitor C is disconnected from the bit line BL, and the charge on the storage capacitor C gradually decreases over time.

[0067] For example, Figure 5 A schematic diagram showing the change of charge on a storage capacitor over time is shown. Figure 5 The horizontal axis represents time in milliseconds (ms); the vertical axis represents the capacitance of the storage capacitor C in percentage (%). The capacitance of the storage capacitor C is equal to the ratio of its real-time capacitance to its rated capacitance. For example, when the storage capacitor C is fully charged, its capacitance is 100%; when it is fully discharged, its capacitance is 0%.

[0068] like Figure 5 As shown, for a storage capacitor C with normal storage capacity, after it is disconnected from the bit line BL, its capacitance will gradually decrease from 100% along curve L11. Conversely, for a storage capacitor C with leakage current, its capacitance will decrease rapidly from 100% along curve L12. Since capacitance reflects the storage performance of the capacitor, according to... Figure 5 It can be seen that the storage capacity of the storage capacitor C, which exhibits leakage behavior, also decreases significantly. For example, after 100ms, the capacitance of the storage capacitor C has dropped to below 50%.

[0069] In this embodiment, the capacitance hold-up time can be used to measure the rate of capacitance decay of the storage capacitor. The capacitance hold-up time refers to the time it takes for the storage capacitor to decay from a first capacitance to a second capacitance after a word line shutdown voltage is applied to the word line connected to the storage capacitor. For example, the first capacitance can be 100%, and the second capacitance can be 50%. That is, the time it takes for the storage capacitor to decay from 100% to 50% can be used as the capacitance hold-up time. For example, if the base time for the capacitance hold-up time is 200ms, and the capacitance hold-up time of the storage capacitor is less than this base time, for example, only 100ms, it indicates that the storage capacitor is leaking current and its storage capacity is abnormal. Conversely, if the capacitance hold-up time of the storage capacitor is greater than or equal to the base time, it indicates that the capacitor is not leaking current and its storage capacity is normal.

[0070] The inventors discovered through research that the storage capacity of a storage capacitor often affects the read and write accuracy of data storage, and this will be explained in the following section in conjunction with a differential amplifier.

[0071] Figure 6 A schematic diagram of the operation of a differential amplifier is shown. Figure 6 As shown, taking the reading of data "1" as an example, the bit line and complementary bit line connected to the memory cell can be charged during the pre-charge stage to equalize them. Then, the memory transistor MA is turned on to create a potential difference ΔV between the voltage BLT of the bit line and the voltage Blc of the complementary bit line, which can be read by the differential amplifier.

[0072] When the storage capacity of the storage capacitor C is normal, the capacitance of the storage capacitor C is large enough, for example, the charge exceeds 50%, so that a sufficiently large potential difference ΔV can be generated, so that the differential amplifier can read the correct data.

[0073] However, when the storage capacity of the storage capacitor C is abnormal, resulting in a small capacitance of the storage capacitor C, the voltage BLt on the bit line becomes low due to insufficient potential difference ΔV, which prevents the differential amplifier from reading the correct data.

[0074] Based on the above combination Figure 6 Analysis shows that leakage current in storage capacitors affects their storage performance, and consequently, the data storage accuracy of the storage cells. Therefore, how to detect leakage current in storage capacitors has become an urgent problem to be solved.

[0075] However, at present, the detection of leakage behavior in storage capacitors is often a rough one based on the capacitance retention time, rather than a more in-depth and precise detection of leakage behavior.

[0076] The inventors discovered through research that when adjusting the word line voltage near the word line shutdown voltage, several factors can significantly affect the capacitance retention time of the storage capacitor. For example, as the manufacturing process continues to shrink, the distance between word lines is getting closer and closer, and both of the following reasons can cause leakage in the storage capacitor.

[0077] Reason 1: When Figure 4 When the word line 121 shown causes the controlled storage capacitor 17 (assuming it is the storage capacitor to be detected) to not be completely turned off, leakage current may be generated along the leakage path a, resulting in leakage behavior of the storage capacitor 17. In this case, the leakage of the storage capacitor 17 can be considered to be related to the word line 121 used to control the storage capacitor 17.

[0078] Reason 2, when Figure 4 When the adjacent word line 122 of the storage capacitor 17 shown is turned on, the base charge of the storage transistor in the storage cell to which the storage capacitor 17 belongs is redistributed near the adjacent word line 122 under the influence of the high voltage and electric field of the adjacent word line 122. Near the adjacent word line 122, a small number of electrons in the base accumulate under the influence of the electric field to form a channel. When the potentials at both ends of the adjacent word line 122 are different, a voltage difference will be generated, and the charge will... Figure 4 As shown, leakage current flows from one end to the other through the channel, causing the charge stored in storage capacitor 17 to escape to the adjacent word line 122, thus resulting in leakage behavior of storage capacitor 17. In this case, the leakage of storage capacitor 17 can be considered to be related to the adjacent word line 122.

[0079] For example, Figure 7 A schematic diagram of a semiconductor structure is shown. For example, if the storage capacitor C0 to be detected leaks, it is impossible to determine whether the leakage is related to the adjacent word line WL2 or the word line WL3 to which the storage capacitor C0 is connected.

[0080] Based on this, embodiments of this application provide a capacitor leakage detection method, apparatus, device, and medium. It can locate the capacitor leakage behavior to the word line to be detected or the adjacent word line based on whether the first change correlation information between the storage capacitor to be detected and the word line voltage of the word line to be detected meets the first abnormality judgment condition, or whether the second change correlation information between the storage capacitor to be detected and the word line voltage of the adjacent word line meets the second abnormality judgment condition, thereby realizing the precise detection of capacitor leakage behavior.

[0081] The implementation methods will now be described in detail with reference to the accompanying drawings and embodiments.

[0082] Before introducing the capacitor leakage detection method, the semiconductor structure and circuit structure involved in the embodiments of this application will be described first.

[0083] In the embodiments of this application, the storage capacitors in the storage cell array that need to be detected for leakage current can be used as storage capacitors to be detected, the word lines connected to the storage capacitors to be detected can be used as word lines to be detected, and the word lines other than the word lines to be detected that are adjacent to the storage capacitors to be detected can be used as adjacent word lines.

[0084] Figure 8 This illustration shows a schematic diagram of a semiconductor structure provided in an embodiment of this application. Figure 9 This illustration shows a voltage control diagram of a semiconductor structure according to an embodiment of this application. Figure 10 A circuit diagram of a semiconductor memory cell is shown.

[0085] Please see also Figures 8-10 If storage capacitor C0 is the storage capacitor to be tested, then word line 121 connected to storage capacitor C0 is the word line to be tested, and word line 122 is the adjacent word line of storage capacitor C0 to be tested. Wherein, if... Figure 10 As shown, storage transistor MA0 is charged and discharged under the control of word line 121, and storage transistor MA1 is charged and discharged under the control of word line 122, wherein word line 122 is the adjacent word line of storage transistor MA0.

[0086] Different word line voltages can be applied to the word line to be detected and adjacent word lines. For example, a word line voltage Va can be applied to word line 121, and a word line voltage Vb can be applied to word line 122. Word line voltages Va and Vb correspond to the low potential of the word line. That is, when a word line voltage Va or Vb is applied to a word line, that word line is considered to be at a low potential.

[0087] It should be noted that, in the embodiments of this application, applying different word line voltages to the word line to be detected and the adjacent word line means that the word line voltages on the two word lines can vary independently. For example, two voltage sources can provide word line voltages to the word line to be detected and the adjacent word line respectively, or the same voltage source can provide word line voltages to the word line to be detected and the adjacent word line through different voltage adjustment circuits. In the embodiments of this application, the specific voltage values ​​of the word line voltage of the word line to be detected and the word line voltage of the adjacent word line can be the same or different, and there is no specific limitation on this.

[0088] After introducing the semiconductor structure and circuit structure involved in the embodiments of this application, the capacitor leakage detection method will be described next.

[0089] This application provides a method for detecting capacitor leakage current, which can be executed by any electronic device with computing capabilities.

[0090] Figure 11 This document illustrates a flowchart of a capacitor leakage detection method according to an embodiment of this application. Figure 11 As shown, the capacitor leakage detection method provided in this application embodiment includes the following steps S1110 and S1120.

[0091] S1110, while fixing the word line voltage of adjacent word lines, acquire the first change correlation information between the capacitance retention time of the storage capacitor to be detected and the word line voltage of the word line to be detected. The word line voltage of the word line to be detected varies within a preset voltage range, including the word line shutdown voltage.

[0092] The storage capacitor to be tested can be the storage capacitor among the storage capacitors of each storage cell in the storage cell array that needs to be tested for leakage current.

[0093] In some embodiments, to improve detection efficiency, the storage capacitor to be detected may be a leakage capacitor with abnormal storage capacity. Accordingly, before S1110, the capacitor leakage detection method may further include the following steps A11 and A12.

[0094] Step A11: Obtain the capacitance hold-up time of multiple storage capacitors in the storage cell array. For example, the specific details of the capacitance hold-up time can be found in the relevant content of the above sections of the embodiments of this application, and will not be repeated here.

[0095] Step A12: Identify the storage capacitors whose retention time is less than a preset time threshold from among the multiple storage capacitors as the storage capacitors to be tested. The preset time threshold can be set according to actual conditions and specific needs; for example, it can be set as a reference time for the retention time, such as 200ms.

[0096] In some embodiments, for storage capacitors whose retention time is greater than or equal to a preset time threshold, it can be determined that they are in a normal state, and leakage detection is stopped.

[0097] This embodiment allows for the identification of storage capacitors with leakage current based on a preset time threshold, and further leakage detection of these capacitors, thus improving the efficiency of leakage detection.

[0098] After introducing the storage capacitor to be tested, the word line to be tested will be explained next.

[0099] The word line to be tested is the word line used to control the charging and discharging of the storage capacitor to be tested, that is, the word line belonging to the same storage cell as the storage capacitor to be tested. For example, see [link to example]. Figure 10If storage capacitor C0 is the storage capacitor to be detected, then word line 121 is the word line to be detected. In some embodiments, when the word line is at a high potential, such as when a word line turn-on voltage is applied, the storage capacitor to be detected can be controlled to charge. And when the word line is at a low potential, such as when a word line turn-off voltage is applied, the charge on the storage capacitor to be detected gradually decreases over time.

[0100] After introducing the word lines to be tested, the preset voltage range will be explained next.

[0101] The preset voltage range can be used to keep the word line at a low potential. For example, when the word line voltage of the word line to be detected is within the preset voltage range, the storage transistor of the storage cell to which the storage capacitor to be detected belongs is in the off state, and the storage capacitor to be detected is in a state of gradual discharge.

[0102] In some embodiments, the upper threshold of the preset voltage range is equal to the sum of the word line shutdown voltage Vwloff and the maximum allowable differential voltage Verr. For example, Figure 12 A schematic diagram illustrating a preset voltage range provided in an embodiment of this application is shown. Figure 12 As shown, the upper limit threshold of the preset voltage range U0, i.e., the maximum value of the preset voltage range U0, is represented as Vwloff + Verr. For example, in order to improve the accuracy of leakage current detection, the upper limit threshold Vwloff + Verr of the preset voltage range U0 is less than the word line turn-on voltage Vwlon.

[0103] The maximum allowable differential voltage value, Verr, characterizes the maximum permissible range of word line voltage variation during leakage current detection. Optionally, the maximum allowable differential voltage value can be the product of the absolute value of the word line shutdown voltage and a preset multiplier. The preset multiplier can be set according to actual conditions and specific scenarios; for example, it can be 1, without specific limitation. In one example, if the word line shutdown voltage Vwloff equals -0.2V, then the maximum allowable differential voltage value Verr can be 0.2V. Correspondingly, the upper limit threshold of the preset voltage range can be 0V.

[0104] In one embodiment, the maximum allowable differential voltage Verr is determined based on the distance between the word line to be detected and its neighboring word lines. Optionally, the maximum allowable differential voltage Verr is positively correlated with this distance; that is, the greater the distance between the word line to be detected and its neighboring word lines, the greater the maximum allowable differential voltage. In one example, the distance between the word line to be detected and its neighboring word lines is less than or equal to 45 nanometers. When the distance between the word line to be detected and its neighboring word lines is less than or equal to 45 nanometers, the word lines are relatively close, which may cause leakage current in the storage capacitor to be detected due to the two reasons mentioned above. In this case, the capacitor leakage detection method provided in this application embodiment can be used for precise detection of leakage behavior.

[0105] It should be noted that, since the voltage of adjacent word lines can be adjusted within a preset voltage range to determine whether the leakage behavior of the storage capacitor under test is related to adjacent word lines, when leakage of the storage capacitor under test is caused by charge escaping to adjacent word lines, the greater the distance between the tested word line and the adjacent word lines, the less obvious the charge escaping phenomenon becomes. This might lead to the mistaken conclusion that the leakage behavior of the storage capacitor under test is unrelated to the adjacent word lines due to the insignificant change in capacitor holding time. By increasing the maximum allowable voltage difference, the potential difference between the tested word line and the adjacent word lines can be increased, thereby increasing the leakage current and avoiding the aforementioned false detection phenomenon, thus ensuring diagnostic accuracy.

[0106] Furthermore, it should be noted that by setting the upper limit threshold of the preset voltage range to be equal to the sum of the word line shutdown voltage and the maximum allowable voltage difference, the word line voltage of the word line under test can be controlled to not exceed the preset allowable voltage difference range, thereby enabling reasonable control of the word line voltage. For example, this avoids the impact of an excessively large adjustment range on the capacitance holding time of the storage capacitor under test when the storage transistor connected to the word line under test is not completely turned off, thus avoiding any impact on the accuracy of leakage current detection.

[0107] In other embodiments, the lower threshold of the preset voltage range is equal to the difference between the word line shutdown voltage and the maximum allowable differential voltage. See also... Figure 12 The lower limit threshold of the preset voltage range U0, i.e., the minimum value of the preset voltage range U0, is denoted as Vwloff-Verr. For example, the lower limit threshold of the preset voltage range can be -0.4V.

[0108] It should be noted that other details regarding the lower threshold can be found in the above description of the upper threshold in the embodiments of this application, and will not be repeated here.

[0109] It should be noted that by setting the lower limit of the preset voltage range to be equal to the difference between the word line shutdown voltage and the maximum allowable voltage difference, the word line voltage of the word line under test can be controlled to be no lower than the preset allowable voltage difference range, thereby enabling reasonable control of the word line voltage. For example, this avoids the impact of an excessively large adjustment range on leakage current detection efficiency.

[0110] After introducing the preset voltage range, the information related to the first change will be explained next.

[0111] The first change correlation information is used to characterize the correspondence between the capacitance retention time of the storage capacitor to be detected and the word line to be detected. For example, the first change correlation information can be a correspondence formula or a relationship curve, without specific limitation.

[0112] After introducing the above concepts, the specific implementation of S1120 will be described in detail below.

[0113] In some embodiments, S1110 may include steps A21 to A23.

[0114] Step A21: Control the word line voltage of the adjacent word line to be fixed at the word line shutdown voltage, and adjust the word line voltage of the word line to be tested within a preset voltage range.

[0115] For example, see [link to previous article] Figure 9 It can control the word line voltage Vb of the adjacent word line 122 to be equal to Vwloff, and control the word line voltage Va of the word line 121 to be detected to vary within the range of [Vwloff-Verr, Vwloff+Verr].

[0116] Step A22: Obtain the capacitance hold-up time of the storage capacitor to be tested corresponding to the word line voltage of the word line to be tested after each adjustment. Optionally, for each adjusted word line voltage value, the word line voltage Va of the word line to be tested can be adjusted to that word line voltage value after the capacitance of the storage capacitor to be tested reaches 100%, and then the capacitance hold-up time of the storage capacitor to be tested is recorded as the capacitance hold-up time corresponding to that word line voltage value.

[0117] Step A23: Determine the first change association information based on the word line voltage of the word line to be tested after each adjustment and the capacitance retention time of the corresponding storage capacitor to be tested.

[0118] Optionally, after obtaining multiple sets of corresponding word line voltages and capacitor holding times, the first change correlation information can be generated by curve fitting or function fitting, without specific limitations.

[0119] In one example Figure 13 This diagram illustrates the relationship between the capacitance retention time and voltage of a storage capacitor to be detected, as provided in this application. Figure 13Curve L21, shown as a solid line, represents the relationship between the word line voltage of the word line under test and the capacitance hold time of the storage capacitor under test. The vertical axis of curves L21-L23 represents capacitance hold time. Curve L21 shows the change in capacitance hold time of the storage capacitor under test with the word line voltage of the word line under test. In representing curve L21, the horizontal axis represents the word line voltage of the word line under test, and Vx represents the word line turn-off voltage. Curve L22 shows the relationship between the storage capacitor under test and the base voltage. In representing curve L22, the horizontal axis represents the base voltage, and Vx in the horizontal axis of curve L22 represents the reference value of the base voltage. Curve L23 shows the change in capacitance hold time of the storage capacitor under test with the word line voltage of adjacent word lines. In representing curve L23, the horizontal axis represents the word line voltage of adjacent word lines, and Vx represents the word line turn-off voltage.

[0120] like Figure 13 As shown, the capacitor holding time corresponding to the word line voltage Vx-Verr of the word line to be detected is 100ms, the capacitor holding time corresponding to the word line voltage Vx is 100ms, and the capacitor holding time corresponding to the word line voltage Vx+Verr is 110ms, and then the relationship curve L21 is generated.

[0121] By using steps A21 to A23, and by controlling the voltage of adjacent word lines to remain at the word line shutdown voltage and controlling the voltage of the word line to be tested to vary within a preset voltage range, the leakage problem of charge escaping from the storage capacitor to be tested to adjacent word lines can be avoided, thus affecting the leakage detection result of whether the word line to be tested has caused leakage behavior, thereby improving the detection accuracy of leakage detection.

[0122] In other embodiments, the first change association information can also be obtained directly from other computing devices. It should be noted that other methods can also be used to obtain this first change association information, and this application does not specifically limit this method.

[0123] After introducing the content of S1110, S1120 will be explained next.

[0124] S1120, when the first change-related information satisfies the first anomaly determination condition, it is determined that the leakage behavior of the storage capacitor to be detected is related to the word line to be detected.

[0125] The first anomaly determination condition is used to represent the condition that must be met for the leakage behavior of the word line to be tested.

[0126] In some embodiments, the first anomaly determination relationship may include the fact that the first change correlation information and the first baseline change correlation information are not correlated.

[0127] Correspondingly, steps A31 and A32 are also included between S1110 and S1120.

[0128] Step A31: Determine whether the first change correlation information and the first baseline change correlation information are correlated.

[0129] The first reference change correlation information is the correlation information between the capacitance hold time of the storage capacitor under test and the word line voltage change of the word line under test under normal conditions. In one example... Figure 14 This paper presents a schematic diagram showing the relationship between the word line voltage of a word line to be detected and the capacitance retention time of a storage capacitor to be detected, according to an embodiment of this application. Figure 15 This illustration shows a schematic diagram of the relationship between the word line voltage of the word line to be detected and the capacitance retention time of the storage capacitor to be detected, according to another embodiment of this application. Figure 14 and Figure 15 Curve L30 in the figure represents the information related to the first baseline change.

[0130] For step A31, similarity is used to evaluate the degree of similarity between the first change-related information and the first baseline change-related information. If the difference between the two is large, it is determined that there is no correlation between them. For example, if... Figure 14 Curve L31 represents the first change-related information. Since curve L32 has a larger change range, curves L31 and L30 are not correlated at this point. However, if the first change-related information and the first baseline change-related information are determined to have a high similarity, then the two curves are considered correlated. For example, if... Figure 15 The middle curve L32 represents the first change correlation information. Since the change range of curve L32 is small, there is a correlation between curve L32 and curve L30 at this time.

[0131] In some embodiments, the correlation between the first change correlation information and the first baseline change correlation information can be calculated. For example, the Pearson coefficient can be used to calculate the correlation between the two.

[0132] In other embodiments, the correlation between the two can be determined based on the graphical similarity or overlap between the curve corresponding to the first change association information and the change curve of the first baseline change association information.

[0133] Step A32: If it is determined that the first change-related information is not related to the first baseline change-related information, then the first change-related information is determined to meet the first anomaly judgment condition.

[0134] By combining the first anomaly determination conditions shown in steps A1 and A32, since the first reference change correlation information is the correlation information between the capacitance holding time of the storage capacitor under test and the word line voltage of the word line under test under normal conditions, it can be determined that the relationship between the capacitance holding time of the storage capacitor under test and the word line voltage of the word line under test is abnormal when it is determined that the first change correlation information and the first reference change correlation information are not correlated. Thus, it is possible to accurately determine that the leakage behavior of the storage capacitor under test is related to the word line under test.

[0135] In other embodiments, the first anomaly determination condition may include a change parameter of the first change-related information being greater than or equal to a preset parameter threshold.

[0136] Correspondingly, steps A41 and A42 are also included between S1110 and S1120.

[0137] Step A41: Obtain the change parameters of the first change-related information.

[0138] Among them, the change parameter of the first change association information is used to characterize the degree of change of the first change association information.

[0139] In one example, the change parameter of the first change-related information includes the rate of change of the first change-related information. See also, for an example... Figure 14 It can be the slope of curve L31, or the rate of change parameter that reflects the degree of change of curve L31, such as the average slope or the maximum slope, and there is no specific limitation on it.

[0140] In another example, the change parameter of the first change-related information includes the maximum difference in the capacitance holding time of the first change-related information. The maximum difference in capacitance holding time can be the difference between the maximum value and the minimum value of the capacitance holding time in the first change-related information. See also, for an example... Figure 14 The minimum holding time of the capacitor is 50ms, and the maximum holding time of the capacitor is 150ms. Therefore, the maximum difference between the holding times of the capacitor is 100ms.

[0141] Step A42: If the change parameter of the first change-related information is greater than or equal to a preset parameter threshold, determine that the first change-related information meets the first anomaly judgment condition.

[0142] In some embodiments, the preset parameter threshold can be set according to the actual situation and specific needs, which will not be elaborated on in detail. For example, it can be an empirical value, such as 20ms, etc., without specific limitation.

[0143] Through the above steps A41 and A42, since the changing parameters can reflect the degree of change of the first change-related information, when the changing parameters of the first change-related information are greater than or equal to the preset parameter threshold, it is determined that the storage capacitor under test has undergone a significant change due to the influence of the word line under test. At this time, it can be accurately determined that the leakage behavior of the storage capacitor under test is related to the word line under test.

[0144] The capacitor leakage detection method provided in this application embodiment can obtain first change correlation information between the capacitor holding time of the storage capacitor under test and the word line voltage of the word line under test when the word line voltage of the adjacent word line is fixed and the word line voltage of the word line under test is varied within a preset voltage range including the word line turn-off voltage. Since capacitor leakage will affect the capacitor holding time, when the first change correlation information satisfies the first abnormality judgment relationship, it can be determined that the change of the capacitor holding time of the storage capacitor under test is abnormal, that is, the cause of the leakage of the storage capacitor under test is caused by the word line under test. Thus, the abnormality of capacitor leakage can be located to the word line under test, and the fine detection of capacitor leakage behavior is achieved.

[0145] In some embodiments, after S1120, the capacitor leakage detection method may further include step B11.

[0146] Step B11: Determine that the leakage of the storage capacitor under test is caused by the word line under test, which prevents the storage capacitor under test from being completely turned off.

[0147] By using step B11, after locating the capacitor leakage problem to the word line to be tested, the specific cause of the storage capacitor leakage fault can be accurately determined, thus achieving accurate fault detection of the capacitor leakage problem.

[0148] In some embodiments, after determining that the leakage is caused by the incomplete shutdown of the storage capacitor under test due to the word line under test, the word line shutdown voltage of the word line under test or the material or ion doping concentration of the storage capacitor in the subsequent batches of storage cell arrays can be adjusted, thereby improving the overall process quality of the storage cell array.

[0149] In some embodiments, the inventors have also discovered through research that contact problems between the doped layer and the substrate can also cause leakage in the storage capacitor under test. For example, see [link to previous document]. Figure 4 If there are contact problems between the doped region 16 or the substrate 11, leakage current may be generated along the leakage path c. The leakage current along the leakage path c will reduce the charge of the storage capacitor 17, thereby causing leakage behavior of the storage capacitor 17.

[0150] Based on this, the inventors discovered that, during the process of controlling the change in substrate voltage, it is possible to determine whether the cause of capacitor leakage is a contact problem between the doped layer and the substrate by determining whether the capacitor holding time changes significantly.

[0151] Correspondingly, in order to improve the accuracy of leakage detection of the storage capacitor under test, before S1110, the capacitor leakage detection method may also include the following steps B21 to B23.

[0152] Step B21: Obtain the third correlation information between the capacitance retention time of the storage capacitor under test and the substrate voltage. Here, the substrate voltage is the substrate voltage of the storage cell under test. For example, it could be... Figure 9 Vbody in the context.

[0153] The third variation correlation information is used to characterize the correspondence between the capacitance retention time of the storage capacitor under test and the substrate voltage. For example, the third variation correlation information can be a correspondence formula or a relationship curve, without specific limitations.

[0154] In some embodiments, the base voltage can be adjusted within a preset base voltage range that includes a reference value for the base voltage. It should be noted that the preset base voltage range is similar to the preset voltage range described above.

[0155] For example, if the reference voltage has a reference value of -0.6V and the maximum allowable adjustment value of the reference voltage is 0.2V, then the reference voltage can be adjusted within the range of [-0.8V, -0.4V].

[0156] It should be noted that when obtaining this third change correlation, the word line voltage of the word line to be detected and the adjacent word lines can be fixed, and the base voltage of the storage capacitor to be detected can be adjusted.

[0157] Step B22: Determine whether the third change-related information meets the third anomaly judgment condition.

[0158] The third anomaly criterion is a condition that must be met to indicate the leakage behavior of the storage capacitor under test related to contact problems between the doped layer and the substrate.

[0159] In one example, the third anomaly determination criterion may include the fact that the third change correlation information is not correlated with the third baseline change correlation information. The third baseline change correlation information is the correlation information between the capacitance hold-up time of the storage capacitor under test and the base voltage under normal conditions.

[0160] In another example, the third anomaly determination condition may include a change parameter of the third change-related information being greater than or equal to a preset parameter threshold.

[0161] It should be noted that the third anomaly determination condition is similar to the first anomaly determination condition. Please refer to the relevant description of the first anomaly determination condition in the above part of the embodiments of this application, and it will not be repeated here.

[0162] Step B23: Determine that the third change-related information does not meet the third anomaly judgment condition.

[0163] In one example, after step B22, the capacitor leakage detection method further includes step B24.

[0164] Step B24: If the third correlation is determined to meet the third anomaly judgment condition, then the leakage of the storage capacitor under test can be determined to be due to a contact problem between the doped layer and the substrate.

[0165] Optionally, after determining that the third correlation meets the third anomaly judgment condition, the contact process between the doped layer and the substrate in the subsequent semiconductor structure can be adjusted to improve the process quality of the semiconductor structure in the subsequent process.

[0166] It should be noted that by using steps B21 to B23 above, before detecting whether the leakage behavior of the storage capacitor under test is related to the word line under test or adjacent word lines, the leakage fault of the storage capacitor under test caused by the contact problem between the doped layer and the substrate can be ruled out, thereby improving the accuracy of the leakage behavior detection of the storage capacitor under test.

[0167] Accordingly, Figure 16 A schematic diagram illustrating the relationship between the capacitance retention time and voltage of a storage capacitor when the aforementioned problem exists is shown. Figure 16 Curve L31 in the diagram illustrates the relationship between the storage capacitor's hold time and the substrate voltage when there are contact issues between the doped layer and the substrate. Curve L32 illustrates the relationship between the storage capacitor's hold time and the word line voltage when there are contact issues between the doped layer and the substrate. The vertical axis of both curves L31 and L32 represents the hold time. The horizontal axis of curve L31 represents the substrate voltage, and correspondingly, Vx on the horizontal axis of curve L31 represents the reference value of the substrate voltage. The horizontal axis of curve L32 represents the word line voltage, and correspondingly, Vx on the horizontal axis of curve L31 represents the word line turn-off voltage. For example, if the reference value of the substrate voltage is -0.6 volts (V), then when the substrate voltage varies within the range of -0.8V to -0.4V, as shown in curve L31, the change in hold time is more pronounced. Furthermore, it can be observed that when the word line shutdown voltage is -0.2V, as shown by curve L32, when the word line shutdown voltage varies within the range of -0.4V to 0V, the capacitor holding time remains relatively stable at around 100ms without significant change.

[0168] And, see above. Figure 13 The curve L22, shown as a dashed line, represents the relationship between the capacitance retention time of the storage capacitor under test and the substrate voltage. When the leakage behavior of the storage capacitor under test is related to the word line under test or adjacent word lines, curve L22 remains relatively stable around 100ms without significant change.

[0169] Therefore, according to Figure 13 and Figure 16 In summary, by first determining whether the third change correlation information between the capacitance holding time of the storage capacitor under test and the substrate voltage meets the third anomaly judgment condition, the influence of contact problems between the doped layer and the substrate can be eliminated before the storage capacitor under test is faulty due to the word line, thus improving the detection accuracy.

[0170] In some embodiments, steps B31 and B32 are further included between S1110 and S1120.

[0171] Step B31: Obtain the distance between the character line to be detected and its neighboring character lines.

[0172] Step B32: Determine that the distance is less than the preset character line distance threshold.

[0173] In one example, the preset word line distance threshold can be set according to the actual scenario and specific needs. For example, it can be an empirical value that can measure whether the charge of the storage capacitor to be detected will escape to the neighboring word line, such as 45 nanometers.

[0174] It should be noted that, through the above steps B31 and B32, when the distance between the word line to be detected and the adjacent word line is less than the preset word line distance threshold, that is, when the two are close, the storage capacitor to be detected controlled by the word line to be detected may not be turned off or the charge of the storage capacitor to be detected may escape to the adjacent word line, which may cause leakage behavior of the storage capacitor to be detected. At this time, by using the capacitor leakage detection scheme provided in the embodiment of this application, the leakage behavior can be accurately detected.

[0175] In some embodiments, a second change correlation information between the capacitance holding time of the storage capacitor to be detected and the word line voltage of the adjacent word line can be obtained first. If the second change correlation information does not meet the second anomaly determination condition, the above steps are then used to detect whether the leakage behavior of the storage capacitor to be detected is related to the word line to be detected.

[0176] In some embodiments, the multiple word lines of the memory cell array may include multiple first word lines and multiple second word lines. The first word lines and second word lines are alternately arranged, with the multiple first word lines used to input first word line voltages and the multiple second word lines used to input second word line voltages.

[0177] For example, Figure 17This illustration shows a schematic diagram of word line connections for an exemplary storage cell array provided in an embodiment of this application. For example... Figure 17 As shown, taking a memory cell array comprising 9 word lines WL0-WL8 as an example, word lines WL0, WL2, WL4, WL6, and WL8 are the first word lines, connected to the word line voltage Va. And word lines WL1, WL3, WL5, and WL7 are the second word lines, connected to the word line voltage Vb.

[0178] This setting enables the word line voltage of two adjacent word lines in the memory cell array to be controlled separately, thereby facilitating the implementation of the capacitor leakage detection method described in the embodiments of this application.

[0179] In one example, for ease of testing, if the first word line is used to control the storage capacitor under test, the word line voltage of the first word line can be controlled to vary within a preset voltage range, and the word line voltage of the second word line can be fixed at the word line shutdown voltage, thereby achieving, for example... Figure 17 The storage capacitors C2, C4, C6, and C8 are being tested in batches to determine whether their leakage behavior is related to the word line being tested.

[0180] Similarly, if the second word line is used to control the storage capacitor to be detected, the word line voltage of the second word line can be controlled to vary within a preset voltage range, and the word line voltage of the first word line can be fixed at the word line shutdown voltage, thereby achieving, for example... Figure 17 The storage capacitors C1, C3, C5, and C7 are to be tested in batches to determine whether their leakage behavior is related to the word line under test.

[0181] Figure 18 A schematic flowchart of another capacitor leakage detection method provided by an embodiment of this disclosure is shown. This disclosure optimizes the above embodiments and can be combined with various optional solutions from one or more of the above embodiments.

[0182] like Figure 18 As shown, the capacitor leakage detection method may include the following steps S1810 and S1820.

[0183] S1810, while fixing the word line voltage of the word line to be detected, acquire second change correlation information between the capacitance retention time of the storage capacitor to be detected and the word line voltage of adjacent word lines. The word line voltage of adjacent word lines varies within a preset voltage range.

[0184] For the second change-related information, see, for example, further details. Figure 13 , Figure 13The curve L23, indicated by the dashed line, represents the relationship between the capacitance retention time of the storage capacitor under test and the word line voltage of the adjacent word line.

[0185] For adjacent word lines, these can be word lines that can affect the holding time of the capacitor being tested. In other words, there is a risk that charge from the capacitor being tested will escape to that word line, such as... Figure 4 The character line is 122.

[0186] It should be noted that other content related to adjacent character lines can be found in the relevant descriptions in the above sections of the embodiments of this application, and will not be repeated here.

[0187] Furthermore, S1810 is similar to S1110; please refer to the specific content of S1110 for details, which will not be repeated here.

[0188] In some embodiments, S1810 may include steps C11 to C13.

[0189] Step C11: Control the word line voltage of the word line to be tested to be fixed at the word line shutdown voltage, and adjust the word line voltage of adjacent word lines within a preset voltage range.

[0190] Step C12: Obtain the capacitance hold-up time of the storage capacitor to be detected corresponding to the word line voltage of the adjacent word line after each adjustment.

[0191] Step C13: Determine the second change association information based on the word line voltage of the adjacent word lines after each adjustment and the capacitance retention time of the corresponding storage capacitor to be detected.

[0192] It should be noted that the specific content of steps C11 to C13 can be found in the above-mentioned part of the embodiments of this application, in conjunction with the relevant description of steps A21 to A23, and will not be repeated here.

[0193] By controlling the voltage of the word line to be tested to be kept at the word line shutdown voltage and controlling the voltage of adjacent word lines to vary within a preset voltage range through steps C11 to C13, the influence of the voltage of the word line to be tested on the leakage current detection result can be avoided, thereby improving the detection accuracy of leakage current detection.

[0194] S1820, if the second change correlation information satisfies the second anomaly determination condition, determine that the leakage behavior of the storage capacitor to be detected is related to the adjacent word line.

[0195] In some embodiments, the second anomaly determination criterion includes that the second change correlation information and the second baseline change correlation information are not correlated.

[0196] Correspondingly, steps C21 and C22 are also included between S1810 and S1820.

[0197] Step C21: Determine whether the second change correlation information is correlated with the second reference change correlation information. The second reference change correlation information is the correlation information between the capacitance retention time of the storage capacitor under test and the change in word line voltage of adjacent word lines under normal conditions.

[0198] Step C22: If the second change correlation information is not correlated with the second baseline change correlation information, determine that the second change correlation information meets the second anomaly determination condition.

[0199] It should be noted that steps C21 to C22 are similar to steps A31 to A32 above. Please refer to the relevant description of steps A31 to A32 in the above part of the embodiments of this application, and they will not be repeated here.

[0200] By combining the second anomaly determination conditions shown in steps C21 to C22 above, since the second reference change correlation information is the correlation information between the capacitance holding time of the storage capacitor under test and the word line voltage of the adjacent word line under normal conditions, it can be determined that the relationship between the capacitance holding time of the storage capacitor under test and the word line voltage of the adjacent word line is abnormal when it is determined that the second change correlation information and the second reference change correlation information are not correlated. Thus, it is possible to accurately determine that the leakage behavior of the storage capacitor under test is related to the adjacent word line.

[0201] In other embodiments, the second anomaly determination condition includes the change parameter of the second change association information being greater than or equal to a preset parameter threshold.

[0202] Correspondingly, steps C31 and C2 are also included between S1810 and S1820.

[0203] Step C31: Obtain the change parameters of the second change-related information. These change parameters characterize the degree of change in the second change-related information.

[0204] Step C32: If the change parameter of the second change-related information is greater than or equal to a preset parameter threshold, determine that the second change-related information meets the second anomaly judgment condition.

[0205] It should be noted that steps C31 and C32 are similar to steps A41 and A42 above, and can be found in the relevant descriptions in the above parts of this application, which will not be repeated here.

[0206] Through the above steps C31 and C32, since the changing parameters can reflect the degree of change of the second change-related information, when the changing parameters of the second change-related information are greater than or equal to the preset parameter threshold, it is determined that the storage capacitor under test has undergone a significant change due to the influence of the adjacent word lines. At this time, the leakage behavior of the storage capacitor under test can be accurately determined to be related to the adjacent word lines.

[0207] The capacitor leakage detection method provided in this application embodiment can obtain second change correlation information between the capacitor holding time of the storage capacitor under test and the word line voltage of the adjacent word lines by fixing the word line voltage of the word line to be tested and allowing the word line voltage of the adjacent word lines to vary within a preset voltage range including the word line turn-off voltage. Since capacitor leakage often affects the capacitor holding time, when the second change correlation information satisfies the second abnormality judgment relationship, it can be determined that the change in the capacitor holding time of the storage capacitor under test is abnormal, that is, the cause of the leakage of the storage capacitor under test is caused by the adjacent word line. Thus, the abnormality of capacitor leakage can be located to the adjacent word line, realizing the precise detection of capacitor leakage behavior.

[0208] In some embodiments, after S1820, the capacitor leakage detection method may further include the following step C41.

[0209] Step C41 determines that the leakage of the storage capacitor under test is caused by the distance between the word line under test and the adjacent word line being too close.

[0210] By using step C41, after locating the capacitor leakage problem to an adjacent word line, the specific cause of the storage capacitor leakage fault can be accurately determined, thus achieving accurate fault detection of the capacitor leakage problem.

[0211] In some embodiments, after determining that the leakage is caused by the distance between the word line to be tested and the adjacent word line being too close, process parameters such as the distance between the word line to be tested and the adjacent word line in the subsequent batches of memory cell arrays can be adjusted, thereby improving the overall process quality of the memory cell array.

[0212] In some embodiments, in order to improve the accuracy of leakage detection of the storage capacitor under test, before S1810, the capacitor leakage detection method may further include the following steps C51 to C53.

[0213] Step C51: Obtain the third correlation information between the capacitance holding time of the storage capacitor under test and the substrate voltage. Here, the substrate voltage is the substrate voltage of the storage cell under test.

[0214] Step C52: Determine whether the third change-related information meets the third anomaly judgment condition.

[0215] Step C53: Determine that the third change-related information does not meet the third anomaly judgment condition.

[0216] It should be noted that steps C51 to C53 are similar to steps B21 to B23 described above, and can be found in the relevant descriptions in the above-mentioned parts of the embodiments of this application, which will not be repeated here.

[0217] It should be noted that by using the above steps C51 to C53, before detecting whether the leakage behavior of the storage capacitor under test is related to the word line under test or adjacent word lines, the leakage fault of the storage capacitor under test caused by the contact problem between the doped layer and the base can be ruled out, thereby improving the accuracy of the leakage behavior detection of the storage capacitor under test.

[0218] In some embodiments, steps C61 and C62 are further included between S1810 and S2520.

[0219] Step C61: Obtain the distance between the character line to be detected and its neighboring character lines.

[0220] Step C62: Determine that the distance is less than the preset character line distance threshold.

[0221] It should be noted that steps C61 to C62 are similar to steps B31 to B32 above, and can be found in the relevant descriptions in the above parts of the embodiments of this application, which will not be repeated here.

[0222] It should be noted that, through the above steps C61 and C62, when the distance between the word line to be detected and the adjacent word line is less than the preset word line distance threshold, that is, when the two are close, the storage capacitor to be detected controlled by the word line to be detected may not be turned off or the charge of the storage capacitor to be detected may escape to the adjacent word line, which may cause leakage behavior of the storage capacitor to be detected. At this time, the capacitor leakage detection scheme provided in the embodiment of this application can achieve fine detection of leakage behavior.

[0223] In some embodiments, a first change correlation information between the capacitance holding time of the storage capacitor to be detected and the word line voltage of the word line to be detected can be obtained first. If the first change correlation information does not meet the first anomaly determination condition, the above steps are then used to detect whether the leakage behavior of the storage capacitor to be detected is related to the adjacent word line.

[0224] In some embodiments, the multiple word lines of the memory cell array may include multiple first word lines and multiple second word lines. The first word lines and second word lines are alternately arranged, with the multiple first word lines used for inputting word line voltages and the multiple second word lines used for inputting second word line voltages.

[0225] In one example, for ease of testing, if the first word line is used to control the storage capacitor under test, the word line voltage of the second word line can be controlled to vary within a preset voltage range, and the word line voltage of the first word line can be fixed at the word line shutdown voltage, thereby achieving, for example... Figure 17 The storage capacitors C2, C4, C6, and C8 are undergoing batch testing to determine whether their leakage behavior is related to adjacent word lines.

[0226] Similarly, if the second word line is used to control the storage capacitor to be detected, the word line voltage of the first word line can be controlled to vary within a preset voltage range, and the word line voltage of the second word line can be fixed at the word line shutdown voltage, thereby achieving, for example... Figure 17 The storage capacitors C1, C3, C5, and C7 are undergoing batch testing to determine whether their leakage behavior is related to adjacent word lines.

[0227] Based on the same inventive concept, this application also provides a capacitor leakage detection device for a memory cell array, as shown in the following embodiment. The memory cell array includes multiple memory cells; each memory cell includes a memory cell to be detected, the storage capacitor of the memory cell to be detected is the storage capacitor to be detected, the word line used to control the storage capacitor to be detected is the word line to be detected, and the word lines adjacent to the storage capacitor to be detected are the adjacent word lines, wherein different voltages are applied to the word line to be detected and the adjacent word lines.

[0228] Figure 19 This illustration shows a schematic diagram of a capacitor leakage detection device according to an embodiment of this application, such as... Figure 19 As shown, the capacitor leakage detection device 1900 includes a first information acquisition module 1910 and a first leakage detection module 1920.

[0229] The first information acquisition module 1910 is used to acquire information relating the capacitance retention time of the storage capacitor to be detected to the first change in the word line voltage of the word line to be detected when the word line voltage of the adjacent word line is fixed. The word line voltage of the word line to be detected varies within a preset voltage range, including the word line shutdown voltage.

[0230] The first leakage detection module 1920 is used to determine that the leakage behavior of the storage capacitor to be detected is related to the word line to be detected when the first change correlation information meets the first anomaly judgment condition.

[0231] In one embodiment, the first information acquisition module 1910 includes a first voltage control unit, a second voltage control unit, a parameter acquisition unit, and an information determination unit.

[0232] The first voltage control unit is used to control the word line voltage of adjacent word lines to be fixed at the word line shutdown voltage;

[0233] The second voltage control unit is used to adjust the word line voltage of the word line to be detected within a preset voltage range;

[0234] The first parameter acquisition unit is used to obtain the capacitance holding time of the storage capacitor to be detected corresponding to the word line voltage of the word line to be detected after each adjustment.

[0235] The first information determination unit is used to determine the first change association information based on the word line voltage of the word line to be detected after each adjustment and the capacitance holding time of the corresponding storage capacitor to be detected.

[0236] In one embodiment, the first anomaly determination criterion includes that the first change correlation information and the first baseline change correlation information are not correlated.

[0237] The capacitor leakage detection device 1900 also includes a first judgment module.

[0238] The first judgment module is used to determine whether the first change correlation information and the first reference change correlation information are correlated. The first reference change correlation information is the correlation information between the capacitance holding time of the storage capacitor to be detected and the word line voltage of the word line to be detected under normal conditions.

[0239] It is also used to determine that the first change-related information meets the first anomaly determination condition when the first change-related information is not related to the first baseline change-related information.

[0240] In one embodiment, the first anomaly determination condition includes the change parameter of the first change-related information being greater than or equal to a preset parameter threshold.

[0241] The capacitor leakage detection device 1900 also includes a first parameter acquisition module and a second judgment module.

[0242] The first parameter acquisition module is used to acquire the change parameters of the first change association information. The change parameters of the first change association information are used to characterize the degree of change of the first change association information.

[0243] The second judgment module is used to determine that the first change-related information meets the first anomaly judgment condition when the change parameter of the first change-related information is greater than or equal to a preset parameter threshold.

[0244] In one embodiment, the variation parameters include: the rate of change, and / or, the maximum difference in capacitance hold time.

[0245] In one embodiment, the capacitor leakage detection device 1900 further includes a third information acquisition module, an anomaly judgment module, and an anomaly determination module.

[0246] The third information acquisition module is used to acquire the third information related to the capacitance holding time of the storage capacitor to be detected and the third change of the base voltage, where the base voltage is the base voltage of the storage cell to be detected.

[0247] The anomaly detection module is used to determine whether the third change-related information meets the third anomaly detection conditions.

[0248] The anomaly determination module is used to determine whether the third change-related information does not meet the third anomaly judgment conditions.

[0249] In one embodiment, the upper threshold of the preset voltage range is equal to the sum of the word line shutdown voltage and the maximum allowable differential voltage; and / or,

[0250] The lower threshold of the preset voltage range is equal to the difference between the word line shutdown voltage and the maximum allowable differential voltage.

[0251] In one embodiment, the maximum allowable differential pressure is determined based on the distance between the word line to be detected and the adjacent word lines.

[0252] In one embodiment, the capacitor leakage detection device 3200 further includes a distance acquisition module and a distance judgment module.

[0253] The distance acquisition module is used to obtain the distance between the character line to be detected and its neighboring character lines;

[0254] The distance judgment module is used to determine when the distance is less than a preset character line distance threshold.

[0255] In one embodiment, the distance is less than or equal to 45 nanometers.

[0256] It should be noted that, Figure 19 The capacitor leakage detection device 1900 shown can perform... Figures 11 to 17 The various steps in the method embodiment shown are implemented. Figures 11 to 17 The processes and effects in the method embodiments shown are not described in detail here.

[0257] The capacitor leakage detection device provided in this application embodiment can obtain first change correlation information between the capacitor holding time of the storage capacitor under test and the word line voltage of the word line under test when the word line voltage of the word line under test is fixed and varied within a preset voltage range including the word line shutdown voltage. Since capacitor leakage will affect the capacitor holding time, when the first change correlation information satisfies the first abnormality judgment relationship, it can be determined that the change of the capacitor holding time of the storage capacitor under test is abnormal, that is, the cause of the leakage of the storage capacitor under test is caused by the word line under test. Thus, the capacitor leakage abnormality can be located to the word line under test, and the fine detection of capacitor leakage behavior is realized.

[0258] Figure 20 This document shows a schematic diagram of another capacitor leakage detection device in an embodiment of this application, as shown below. Figure 20 As shown, the capacitor leakage detection device 2000 includes a second information acquisition module 2010 and a second leakage detection module 2020.

[0259] The second information acquisition module 2010 is used to acquire, when fixing the word line voltage of the word line to be detected, the second change correlation information between the capacitance holding time of the storage capacitor to be detected and the word line voltage of the adjacent word lines, wherein the word line voltage of the adjacent word lines varies within a preset voltage range.

[0260] The second leakage detection module 2020 is used to determine that the leakage behavior of the storage capacitor to be detected is related to the adjacent word line when the second change correlation information meets the second anomaly judgment condition.

[0261] In one embodiment, the second information acquisition module 2010 includes: a third voltage control unit, a fourth voltage control unit, a second parameter acquisition unit, and a second information determination unit.

[0262] The third voltage control unit is used to control the word line voltage of the word line to be tested to be fixed at the word line shutdown voltage;

[0263] The fourth voltage control unit is used to adjust the word line voltage of adjacent word lines within a preset voltage range;

[0264] The second parameter acquisition unit is used to obtain the capacitance holding time of the storage capacitor to be detected corresponding to the word line voltage of the adjacent word line after each adjustment.

[0265] The second information determination unit is used to determine the second change association information based on the word line voltage of the adjacent word line after each adjustment and the capacitance holding time of the corresponding storage capacitor to be detected.

[0266] In one embodiment, the second anomaly determination criterion includes that the second change correlation information and the second baseline change correlation information are not correlated.

[0267] The capacitor leakage detection device 2000 also includes a third judgment module.

[0268] The third judgment module is used to determine whether the second change correlation information and the second reference change correlation information are correlated. The second reference change correlation information is the correlation information between the capacitance holding time of the storage capacitor to be detected and the word line voltage of the adjacent word line under normal conditions.

[0269] Furthermore, it is also used to determine that the second change correlation information meets the second anomaly determination condition when the second change correlation information is not correlated with the second baseline change correlation information.

[0270] In one embodiment, the second anomaly determination condition includes the change parameter of the second change-related information being greater than or equal to a preset parameter threshold.

[0271] The capacitor leakage current detection device 2000 also includes a second parameter acquisition module and a fourth judgment module.

[0272] The second parameter acquisition module is used to acquire the change parameters of the second change association information. The change parameters of the second change association information are used to characterize the degree of change of the second change association information.

[0273] The fourth judgment module is used to determine that the second change-related information meets the second anomaly judgment condition when the change parameter of the second change-related information is greater than or equal to a preset parameter threshold.

[0274] In one embodiment, the variation parameters include: the rate of change, and / or, the maximum difference in capacitance hold time.

[0275] In one embodiment, the capacitor leakage detection device 2000 further includes a third information acquisition module, an anomaly judgment module, and an anomaly determination module.

[0276] The third information acquisition module is used to acquire the third information related to the capacitance holding time of the storage capacitor to be detected and the third change of the base voltage, where the base voltage is the base voltage of the storage cell to be detected.

[0277] The anomaly detection module is used to determine whether the third change-related information meets the third anomaly detection conditions.

[0278] The anomaly determination module is used to determine whether the third change-related information does not meet the third anomaly judgment conditions.

[0279] In one embodiment, the upper threshold of the preset voltage range is equal to the sum of the word line shutdown voltage and the maximum allowable differential voltage; and / or,

[0280] The lower threshold of the preset voltage range is equal to the difference between the word line shutdown voltage and the maximum allowable differential voltage.

[0281] In one embodiment, the maximum allowable differential pressure is determined based on the distance between the word line to be detected and the adjacent word lines.

[0282] In one embodiment, the capacitor leakage detection device 2000 further includes a distance acquisition module and a distance judgment module.

[0283] The distance acquisition module is used to obtain the distance between the character line to be detected and its neighboring character lines;

[0284] The distance judgment module is used to determine when the distance is less than a preset character line distance threshold.

[0285] In one embodiment, the distance is less than or equal to 45 nanometers.

[0286] The capacitor leakage detection device provided in this application embodiment can obtain second change correlation information between the capacitance holding time of the storage capacitor under test and the voltage of the adjacent word lines when the word line voltage of the word line under test is fixed and varies within a preset voltage range including the word line shutdown voltage. Since capacitor leakage affects the capacitance holding time, when the second change correlation information satisfies the second anomaly determination relationship, it can be determined that the capacitance holding time of the storage capacitor under test is abnormal, that is, the cause of the leakage of the storage capacitor under test is caused by the adjacent word line. Thus, the capacitor leakage anomaly can be located to the adjacent word line, realizing precise detection of capacitor leakage behavior.

[0287] It should be noted that, Figure 20 The capacitor leakage detection device 2000 shown can perform... Figure 18 The various steps in the method embodiment shown are implemented. Figure 18 The processes and effects in the method embodiments shown are not described in detail here.

[0288] Those skilled in the art will understand that various aspects of this application can be implemented as a system, method, or program product. Therefore, various aspects of this application can be specifically implemented in the following forms: a completely hardware implementation, a completely software implementation (including firmware, microcode, etc.), or a combination of hardware and software implementations, collectively referred to herein as a "circuit," "module," or "system."

[0289] Figure 21 This is a schematic diagram illustrating the structure of an electronic device according to an exemplary embodiment. It should be noted that... Figure 21 The electronic device shown is merely an example and should not be construed as limiting the functionality and scope of use of the embodiments of the present invention.

[0290] like Figure 21 As shown, electronic device 2100 is manifested in the form of a general-purpose computer device. Components of electronic device 2100 include: at least one central processing unit (CPU) 2101, which can perform various appropriate actions and processes based on program code stored in read-only memory (ROM) 2102 or program code loaded from at least one storage unit 2108 into random access memory (RAM) 2103.

[0291] Specifically, according to embodiments of the present invention, program code can be executed by a central processing unit 2101, causing the central processing unit 2101 to perform the steps described in the above-described method embodiments section of this specification, based on various exemplary embodiments of the present invention. For example, the central processing unit 2101 can perform, as follows: Figures 11-18 The steps are shown in the figure.

[0292] RAM 2103 also stores various programs and data required for the operation of electronic device 2100. CPU 2101, ROM 2102, and RAM 2103 are interconnected via bus 2104. Input / output (I / O) interface 2105 is also connected to bus 2104.

[0293] The following components are connected to I / O interface 2105: input unit 2106 including keyboard, mouse, etc.; output unit 2107 including cathode ray tube (CRT), liquid crystal display (LCD), etc., and speaker, etc.; storage unit 2108 including hard disk, etc.; and communication unit 2109 including network interface card, such as LAN card, modem, etc. Communication unit 2109 performs communication processing via a network such as the Internet. Drive 2110 is also connected to I / O interface 2105 as needed. Removable media 2111, such as disk, optical disk, magneto-optical disk, semiconductor memory, etc., are installed on drive 2110 as needed so that computer programs read from them can be installed into storage unit 2108 as needed.

[0294] Figure 22 This is a schematic diagram illustrating a readable storage medium according to an exemplary embodiment.

[0295] refer to Figure 22 As shown, a program product 2200 configured to implement the above-described method according to an embodiment of the present invention is described. This product may employ a portable compact disc read-only memory (CD-ROM) and include program code, and may run on a terminal device, such as a personal computer. However, the program product of the present invention is not limited thereto. In this document, the readable storage medium may be any tangible medium containing or storing a program that may be used by or in conjunction with an instruction execution system, apparatus, or device.

[0296] The aforementioned readable storage medium carries one or more programs, which, when executed by a device, cause the readable storage medium to perform as follows: Figures 11-18 The functions shown are as follows.

[0297] Exemplary embodiments of the present invention have been specifically shown and described above. It should be understood that the present invention is not limited to the detailed structures, arrangements, or implementations described herein; rather, the present invention is intended to cover various modifications and equivalents contained within the spirit and scope of the appended claims. Other embodiments of this application will be readily apparent to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein.

[0298] This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed in this application. The description and examples are to be considered exemplary only, and the true scope and spirit of this application are indicated by the appended claims.

Claims

1. A method for detecting capacitor leakage current in a memory cell array, characterized in that, The storage unit array includes multiple storage units; The storage unit includes a storage unit to be tested, the storage capacitor of the storage unit to be tested is the storage capacitor to be tested, the word line of the storage capacitor to be tested is the word line to be tested, and the word line adjacent to the storage capacitor to be tested is the adjacent word line. The method includes: When fixing the word line voltage of the adjacent word line, first change correlation information between the capacitance retention time of the storage capacitor to be detected and the word line voltage of the word line to be detected is obtained, wherein the word line voltage of the word line to be detected varies within a preset voltage range, including the word line shutdown voltage. When the first change-related information satisfies the first anomaly determination condition, it is determined that the leakage behavior of the storage capacitor to be detected is related to the word line to be detected; or, When fixing the word line voltage of the word line to be detected, second change correlation information between the capacitance retention time of the storage capacitor to be detected and the word line voltage of the adjacent word lines is obtained, wherein the word line voltage of the adjacent word lines varies within a preset voltage range. If the second change correlation information satisfies the second anomaly determination condition, it is determined that the leakage behavior of the storage capacitor to be detected is related to the adjacent word line; Before obtaining the first change-related information or the second change-related information, the method further includes: Obtain the third change correlation information between the capacitance holding time of the storage capacitor to be tested and the base voltage, wherein the base voltage is the base voltage of the storage cell to be tested; Determine whether the third change-related information meets the third anomaly determination condition; It is determined that the third change-related information does not meet the third anomaly determination condition.

2. The method according to claim 1, characterized in that, When fixing the word line voltage of the adjacent word line, the step of acquiring the correlation information between the capacitance retention time of the storage capacitor to be detected and the first change in the word line voltage of the word line to be detected includes: The word line voltage of the adjacent word line is fixed at the word line shutdown voltage. Adjust the word line voltage of the word line to be tested within the preset voltage range; Obtain the capacitance hold time of the storage capacitor to be tested corresponding to the word line voltage of the word line to be tested after each adjustment; The first change association information is determined based on the word line voltage of the word line to be tested after each adjustment and the capacitance retention time of the corresponding storage capacitor to be tested.

3. The method according to claim 1, characterized in that, When fixing the word line voltage of the word line to be detected, the acquisition of second change correlation information between the capacitance retention time of the storage capacitor to be detected and the word line voltage of the adjacent word lines includes: The word line voltage of the word line to be tested is fixed at the word line shutdown voltage; Adjust the word line voltage of the adjacent word lines within the preset voltage range; Obtain the capacitance hold time of the storage capacitor to be detected corresponding to the word line voltage of the adjacent word line after each adjustment; The second change association information is determined based on the word line voltage of the adjacent word line after each adjustment and the capacitance retention time of the corresponding storage capacitor to be detected.

4. The method according to claim 1, characterized in that, The first anomaly determination condition includes that the first change correlation information and the first baseline change correlation information are not correlated; Before determining that the leakage behavior of the storage capacitor under test is related to the word line under test, the method further includes: Determine whether the first change correlation information is correlated with the first reference change correlation information, wherein the first reference change correlation information is the correlation information between the capacitance retention time of the storage capacitor to be detected and the word line voltage of the word line to be detected under normal conditions; If the first change association information is not related to the first baseline change association information, the first change association information is determined to meet the first anomaly determination condition.

5. The method according to claim 1, characterized in that, The first anomaly determination condition includes that the change parameter of the first change association information is greater than or equal to a preset parameter threshold; Before determining that the leakage behavior of the storage capacitor under test is related to the word line under test, the method further includes: Obtain the change parameters of the first change association information, which are used to characterize the degree of change of the first change association information. If the change parameter of the first change-related information is greater than or equal to the preset parameter threshold, the first change-related information is determined to meet the first anomaly determination condition.

6. The method according to claim 1, characterized in that, The second anomaly determination condition includes that the second change correlation information and the second baseline change correlation information are not correlated; Before determining that the leakage behavior of the storage capacitor under test is related to the adjacent word line, the method further includes: Determine whether the second change correlation information is correlated with the second reference change correlation information, wherein the second reference change correlation information is the correlation information between the capacitance retention time of the storage capacitor to be detected and the word line voltage of the adjacent word line under normal conditions; If the second change correlation information is not correlated with the second baseline change correlation information, the second change correlation information is determined to meet the second anomaly determination condition.

7. The method according to claim 1, characterized in that, The second anomaly determination condition includes that the change parameter of the second change association information is greater than or equal to a preset parameter threshold; Before determining that the leakage behavior of the storage capacitor under test is related to the adjacent word line, the method further includes: Obtain the change parameters of the second change association information, which are used to characterize the degree of change of the second change association information; If the change parameter of the second change-related information is greater than or equal to the preset parameter threshold, the second change-related information is determined to meet the second anomaly determination condition.

8. The method according to claim 5 or 7, characterized in that, The variation parameters include: the rate of change, and / or, the maximum difference in the capacitance holding time.

9. The method according to claim 1, characterized in that, The upper threshold of the preset voltage range is equal to the sum of the word line shutdown voltage and the maximum allowable differential voltage; and / or, The lower limit threshold of the preset voltage range is equal to the difference between the word line shutdown voltage and the maximum allowable voltage difference.

10. The method according to claim 9, characterized in that, The maximum allowable pressure difference is determined based on the distance between the character line to be detected and the adjacent character lines.

11. The method according to claim 1, characterized in that, Before obtaining the first change-related information or the second change-related information, the method further includes: Obtain the distance between the character line to be detected and the adjacent character lines; It is determined that the distance is less than a preset character line distance threshold.

12. The method according to claim 10 or 11, characterized in that, The distance is less than or equal to 45 nanometers.

13. A capacitor leakage detection device for a memory cell array, characterized in that, The storage unit array includes multiple storage units; The storage unit includes a storage unit to be tested, the storage capacitor of the storage unit to be tested is the storage capacitor to be tested, the word line of the storage capacitor to be tested is the word line to be tested, and the word line adjacent to the storage capacitor to be tested is the adjacent word line. The capacitor leakage detection device includes: The first information acquisition module is used to acquire, when fixing the word line voltage of the adjacent word line, the first change correlation information between the capacitance holding time of the storage capacitor to be detected and the word line voltage of the word line to be detected, wherein the word line voltage of the word line to be detected varies within a preset voltage range including the word line shutdown voltage. The first leakage detection module is used to determine that the leakage behavior of the storage capacitor to be detected is related to the word line to be detected when the first change correlation information satisfies the first anomaly determination condition; or The second information acquisition module is used to acquire, when fixing the word line voltage of the word line to be detected, second change correlation information between the capacitance holding time of the storage capacitor to be detected and the word line voltage of the adjacent word line, wherein the word line voltage of the adjacent word line varies within a preset voltage range including the word line shutdown voltage. The second leakage detection module is used to determine that the leakage behavior of the storage capacitor to be detected is related to the adjacent word line when the second change correlation information meets the second anomaly determination condition. The third information acquisition module is used to acquire the third information related to the capacitance holding time of the storage capacitor to be detected and the third change of the base voltage, where the base voltage is the base voltage of the storage cell to be detected. The anomaly detection module is used to determine whether the third change-related information meets the third anomaly detection conditions. The anomaly determination module is used to determine whether the third change-related information does not meet the third anomaly judgment conditions.

14. An electronic device, characterized in that, include: processor; as well as Memory for storing the executable instructions of the processor; The processor is configured to execute the capacitance leakage detection method for the memory cell array according to any one of claims 1-12 by executing the executable instructions.

15. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, it implements the capacitor leakage detection method for the memory cell array according to any one of claims 1-12.

Images