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Ternary ordered photoetching resin and chemical amplification photoresist as well as preparation and application methods of ternary ordered photoetching resin and chemical amplification photoresist

A photoresist and resin technology, applied in the field of photolithographic materials, can solve the problems of inability to accurately control the distribution of photoacid-sensitive monomers, the inability to guarantee the reliability of photoresists, confusion, etc.

Pending Publication Date: 2022-07-29
广州微纳光刻材料科技有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This means that the distribution of photoacid-sensitive monomers on the polymer backbone cannot be precisely controlled, that is to say, the site of acid deprotection is uncertain and chaotic; and the reliability of the photoresist cannot be guaranteed. , and the stability of the final lithographic pattern

Method used

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  • Ternary ordered photoetching resin and chemical amplification photoresist as well as preparation and application methods of ternary ordered photoetching resin and chemical amplification photoresist
  • Ternary ordered photoetching resin and chemical amplification photoresist as well as preparation and application methods of ternary ordered photoetching resin and chemical amplification photoresist
  • Ternary ordered photoetching resin and chemical amplification photoresist as well as preparation and application methods of ternary ordered photoetching resin and chemical amplification photoresist

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0082] Embodiment 1: A kind of radical polymerization synthesis method of high-sensitivity, high-contrast silicon-containing photoresist P1

[0083] Under nitrogen protection, the monomer M1, the third monomer M2 containing the protected acidic group, the initiator AIBN and an appropriate amount of ultra-dry solvent were added to a dry polymerization tube with a stirring bar in a molar ratio of 25:2.5:1. The reaction solution was frozen and thawed with liquid nitrogen three times to remove oxygen, and after returning to room temperature, it was put into an oil bath preheated to a predetermined temperature (60-90° C.) and the timing was started. After 24 h, the polymerization tube was placed in liquid nitrogen to quench the reaction, and ethanol was added for precipitation. The polymer was collected by filtration, and dried under vacuum at 40°C to constant weight to obtain a white powder. The structures of comonomers M1 and M2 are:

[0084]

[0085] figure 1 It is the hyd...

Embodiment 2

[0089] Embodiment 2: A kind of radical polymerization synthesis method of high-sensitivity, high-contrast silicon-containing photoresist P2

[0090] Under nitrogen protection, the monomer M3, the third monomer M2 containing the protected acidic group, the initiator AIBN and an appropriate amount of ultra-dry solvent were added to a dry polymerization tube with a stirring bar in a molar ratio of 25:25:1. The reaction solution was frozen and thawed with liquid nitrogen three times to remove oxygen, and after returning to room temperature, it was put into an oil bath preheated to a predetermined temperature (60-90° C.) and the timing was started. After 24 h, the polymerization tube was placed in liquid nitrogen to quench the reaction, and ethanol was added for precipitation. The polymer was collected by filtration, and dried under vacuum at 40°C to constant weight to obtain a white powder. The structures of comonomers M3 and M2 are:

[0091]

[0092] Figure 4 It is the hyd...

Embodiment 3

[0096] Embodiment 3: A kind of radical polymerization synthesis method of high sensitivity, high contrast silicon-containing photoresist P3

[0097] Under nitrogen protection, the monomer M1, the third monomer M4 containing the protected acidic group, the initiator AIBN and an appropriate amount of ultra-dry solvent were added to a dry polymerization tube with a stirring bar in a molar ratio of 32:4:1. The reaction solution was frozen and thawed with liquid nitrogen three times to remove oxygen, and after returning to room temperature, it was put into an oil bath preheated to a predetermined temperature (60-90° C.) and the timing was started. After 24 h, the polymerization tube was placed in liquid nitrogen to quench the reaction, and ethanol was added for precipitation. The polymer was collected by filtration, and dried under vacuum at 40°C to constant weight to obtain a white powder. The structures of comonomers M1 and M4 are:

[0098]

[0099] Figure 7 It is the hydr...

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Abstract

The invention discloses ternary ordered photoetching resin and chemical amplification photoresist as well as preparation and application methods thereof, and belongs to the technical field of photoetching materials. The photoetching resin contains a photoacid-sensitive structural unit and a monomer pair structural unit formed by pairing olefin or vinyl ether, acrylate or metacrylic acid ester through acting force; the two structural units are directly connected through covalent bonds in a polymer main chain. The chemical amplification photoresist comprises the photoetching resin, a photosensitizer, an acid diffusion terminator, a surfactant and a solvent. According to the photolithography resin, acrylate or methacrylate, olefin or vinyl ether and a photoacid-sensitive third monomer capable of generating an acidic group through acid hydrolysis are sequentially introduced through a free radical copolymerization method, so that the photoacid-sensitive monomer is distributed at a fixed point; therefore, when the content is low, the photolithographic pattern can be quickly developed and dissolved out to form a high-contrast photolithographic pattern.

Description

technical field [0001] The invention belongs to the technical field of photolithography materials, and relates to a photoresist with ternary order, fixed-point distribution of photoacid-sensitive monomers, high sensitivity and high contrast, suitable for 248nm (KrF) photoresist, 193nm (ArF) photoresist Application of photoresist and extreme ultraviolet (EUV) photoresist. Background technique [0002] Integrated circuit (IC) is one of the most critical technologies in the information age. From daily life to industrial production, all devices involved in electronic computing are inseparable from chips. It is precisely because of the increasingly powerful chips , personal computers can integrate more and more powerful functions, and mobile phones can enter the era of 3G and 4G. In the manufacture of integrated circuits, photolithography is an important key technology. The continuous improvement of chip functions is inseparable from the development of lithography technology ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08F230/08C08F220/18G03F7/004
CPCC08F230/085G03F7/004C08F220/1818G03F7/095G03F7/0388G03F7/0042G03F7/0392G03F7/0045G03F7/0758G03F7/0275G03F7/0397G03F7/038C08F20/18C08F30/08
Inventor 邓海曹敏
Owner 广州微纳光刻材料科技有限公司
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