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Preparation method of yellow light indium phosphide quantum dots
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A technology of indium quantum and yellow light, which is applied in the field of preparation of core-shell structure InPQDs, can solve problems such as difficult to achieve high-quality yellow light InPQDs synthesis, and achieve the effect of being suitable for popularization and use, simple and easy to implement, and high output rate
Pending Publication Date: 2022-08-02
SHANGHAI UNIV
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However, the addition of Zn source will shift the peak blue to the green band, making it difficult to synthesize high-quality yellow-light InP QDs.
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Embodiment 1
[0034] In this example, see figure 1 , a preparation method of green light InP QDs, the steps are as follows:
[0035] 1) Preparation of raw materials:
[0036] Prepare a homogeneous precursor solution for later use, the steps are as follows:
[0037] 1-1) Preparation of Se-TOP precursor solution:
[0038] in N 2 Under the environment, elemental Se and TOP are mixed and dissolved to obtain a Se-TOP solution with a concentration of 2M, which is for later use;
[0039] 1-2) Preparation of S precursor solution:
[0040] Dissolve 3mmol 1-OT in octadecene (ODE) to make corresponding concentration solution;
[0041] 1-3) Preparation of In precursor solution:
[0042] Add 0.15mmol In(Ac) to the three-necked flask 3 , 0.45mmol PA, 0.15mmol Zn(UA) 2 and 10ml ODE, pass N 2 And heated to 120 ℃ for 1 h to remove water and oxygen to form a uniform In precursor solution for later use;
[0043] 1-4) Preparation of P precursor solution:
[0044] With 0.1mmol(TMS) 3 P is used as a ...
Embodiment 2
[0052] This embodiment is basically the same as the first embodiment, and the special features are:
[0053] In the present embodiment, a simple preparation method for preparing yellow light InP QDs, the steps are as follows:
[0054] 1) Preparation of raw materials:
[0055] Prepare a homogeneous precursor solution for later use, the steps are as follows:
[0056] 1-1) This step is the same as the first embodiment
[0057] 1-2) Preparation of S source precursor solution:
[0058] Dissolve 3mmol of 1-OT in TOA to make a solution of corresponding concentration
[0059] 1-3) Preparation of In precursor solution:
[0060] 0.15mmol In(Ac) in a three-necked flask 3 , 0.45mmol PA, 0.15mmol Zn(UA) 2 and 10ml TOA, pass N 2 And heated to 120 ℃ for 1 h to remove water and oxygen to form a uniform In precursor solution for later use;
[0061] 1-4) This step is the same as the first embodiment
[0062] 2) This step is the same as the first embodiment.
[0063] 3) Prepare the out...
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Abstract
The invention discloses a preparation method of yellow light indiumphosphidequantum dots, which comprises the following steps: preparing a uniform In precursor solution, and preparing a P precursor solution for later use; then adding the P precursor solution into the In precursor solution at a first temperature of 20-60 DEG C, and keeping the mixed solution for at least 1 hour to form an InP nano crystalnucleus and obtain an InP nano crystalnucleus product solution; and cooling to the room temperature of 50 DEG C or below, continuously adding a precursor substance required for synthesizing an external shell layer into the InP nano crystalnucleus product solution, and adjusting to a third temperature of 230-310 DEG C to form the InPQDs coated with the shell layer, thereby obtaining the yellow light indiumphosphidequantum dots. The yellow light InPQDs with high PLQY can be simply prepared, the peak position of the yellow light InPQDs is moved to 570 nm, and the quantum yield is 68%. The yellow light InPQDs can be effectively prepared on the premise that other reaction conditions are not changed by changing the types of the solvents, and the optical performance of the InPQDs is improved.
Description
technical field [0001] The invention relates to a preparation method of yellow light indiumphosphide (InP) quantum dots (QDs), in particular to a preparation method of core-shell structure InP QDs, which is applied to the technical field of preparation technology of light-emitting display semiconductor materials. Background technique [0002] As a new type of semiconductor nano-luminescent material, InP QDs has low toxicity (without lead, cadmium and other toxic heavy metal elements), good stability, and has optical properties comparable to cadmium-based QDs materials, with adjustable luminescence range and narrow luminescence linewidth , the fluorescencequantum yield (PLQY) is high. Among them, yellow QDs play an important role in display and lighting, promoting the development of full-color display technology; in the field of lighting, yellow QDs are widely used as color conversion materials for white lighting equipment. However, the synthesis of Huangguang InP QDs is c...
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