Silicon carbide epitaxial growth pipeline system

Abstract

The invention discloses a silicon carbide epitaxial growth pipeline system which comprises a liquid storage device, an input unit and an output unit, the liquid storage device comprises a constant temperature mechanism and a liquid tank arranged in the constant temperature mechanism, the input unit comprises an input pipeline, the two ends of the input pipeline are connected to the liquid tank and a carrier gas source in a sealed mode respectively, and a first flow controller is arranged on the input pipeline; the output unit comprises an output main pipeline and a plurality of output branch pipelines connected to the output main pipeline in parallel, one end of the output main pipeline is connected to the liquid tank in a sealed mode, a pressure controller is arranged on the output main pipeline, second flow controllers are arranged on at least one part of the output branch pipelines, and the second flow controllers are used for controlling the flow of the output branch pipelines where the second flow controllers are located. According to the invention, the flow of each output branch pipeline can be respectively and independently controlled, the dose distribution proportion of each output branch pipeline is adjustable, and the device is particularly suitable for a large-size (8-12 inches) epitaxial furnace chamber, so that the concentration uniformity, thickness uniformity and the like of a large-size epitaxial wafer are improved in the preparation of the large-size epitaxial wafer.

Description

technical field [0001] The invention relates to the field of third-generation semiconductor silicon carbide material epitaxy equipment, in particular to a silicon carbide epitaxial growth pipeline system capable of realizing multiple independent control. Background technique [0002] The third-generation semiconductor silicon carbide epitaxial growth usually uses chemical vapor deposition (Chemical Vapor Deposition, CVD for short), in which trichlorosilane (TCS) is responsible for providing the silicon element required for epitaxial growth, and trimethyl aluminum (TMA) Responsible for providing the aluminum element required for P-type doping in epitaxial growth. Trichlorosilane (TCS) and trimethylaluminum (TMA) are both liquid at room temperature. Under normal conditions, TCS and TMA cannot be used as liquid sources directly into the furnace cavity. The carrier gas (usually hydrogen) is passed into the TCS or TMA liquid phase source at constant temperature and pressure, and...

AI Technical Summary

Problems solved by technology

[0005]The existing pipeline system and its dose control method can only control the total dose of TCS or TMA actually passed into the reaction chamber, and cannot realize multiple TCS sources or Independent control of the TMA source, therefore, is sufficient in small-sized (4-6 inch) epitaxial chamber control applications

However, as the size of the epitaxy continues to expand, such as the pipeline system used for large-scale (8-12 inches) epitaxial furnace chambers, it is necessary to realize the independent control of multiple channels of the TCS source or TMA source in order to realize multi-channel C , Si, Al, etc., otherwise the concentration uniformity and thickness uniformity of large-scale epitaxial wafers cannot meet the requirements

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