Semiconductor process equipment and processing method thereof

Abstract

The embodiment of the invention provides semiconductor process equipment and a processing method thereof. The processing method of the semiconductor process equipment is used for processing the interior of a process chamber before a wafer is subjected to a process, and comprises the following steps: cleaning residues in the process chamber; depositing a first compact oxide layer on the inner wall of the cleaned process chamber; and densifying the first dense oxide layer to form a second dense oxide layer on the surface of the first dense oxide layer, the oxygen content of the second dense oxide layer being greater than the oxygen content of the first dense oxide layer. According to the embodiment of the invention, the first compact oxide layer and the second compact oxide layer are formed on the inner wall of the process chamber, and the compactness of the second compact oxide layer is better, so that the second compact oxide layer does not peel off into particles due to looseness in the etching process, the wafer is prevented from being polluted, and the yield of the etching process is greatly improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor processing, and in particular, the present application relates to a semiconductor processing equipment and a processing method thereof. Background technique [0002] At present, with the rapid development of the information age, the semiconductor manufacturing industry is also developing rapidly. With the in-depth research in the technical field, the entire manufacturing industry is paying more and more attention to cost saving. For the etching equipment of semiconductor process equipment, the loss of parts exposed to the plasma etching surface inside the process chamber is particularly serious, and with the loss of parts inside the process chamber, the etching environment in the process chamber will drift, so This will further lead to instability of some key dimensions of the etching process. In order to make the etching environment of the process chamber consistent, the internal ...

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Problems solved by technology

[0004] In view of the shortcomings of the existing methods, this application proposes a semiconductor process equipment and its processing method to solve the technical problem in the prior art that the wafer is polluted due to the peeling off of the oxide film, thereby affecting the process yield of the semiconductor process equipment

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