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Vertical power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) based on n-type gallium oxide and p-type diamond and preparation method thereof

A diamond and gallium oxide technology, used in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., can solve the problems of low reverse bias voltage, large reverse leakage current, obvious thermal effect, etc. Band width, improvement of poor voltage resistance, and effect of high carrier mobility

Pending Publication Date: 2022-08-05
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to improve the problems of low reverse bias voltage, large reverse leakage current, and obvious thermal effect of gallium oxide-based power devices currently dominated by Schottky diodes, the present invention provides a vertical power device based on n-type gallium oxide and p-type diamond. MOSFET and its preparation method

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  • Vertical power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) based on n-type gallium oxide and p-type diamond and preparation method thereof
  • Vertical power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) based on n-type gallium oxide and p-type diamond and preparation method thereof
  • Vertical power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) based on n-type gallium oxide and p-type diamond and preparation method thereof

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Embodiment 1

[0042] See figure 1 , figure 1 It is a schematic structural diagram of a vertical power MOSFET based on n-type gallium oxide and p-type diamond provided by an embodiment of the present invention. The vertical power MOSFET includes n + -Ga 2 O 3 Substrate layer 1, n - -Ga 2 O 3 Drift layer 2, p-type diamond base region 3, n + Source region 4 , source electrode 5 , gate electrode 6 and drain electrode 7 . Drain electrode 7, n + -Ga 2 O 3 Substrate layer 1, n - -Ga 2 O 3 Drift layer 2, p-type diamond base 3 and n + The source regions 4 are arranged sequentially from bottom to top. n - -Ga 2 O 3 The doping concentration of the drift layer 2 is less than n + -Ga 2 O 3 Doping concentration of substrate layer 1 . The substrate selected in this embodiment is heavily doped n-type gallium oxide (n + -Ga 2 O 3 ) substrate, n + -Ga 2 O 3 The doping concentration of the substrate layer 1 is 10 18 ~10 20 cm -3 , the thickness is 80 ~ 120μm. n - -n - -Ga 2 ...

Embodiment 2

[0048] On the basis of Embodiment 1, this embodiment provides a preparation method of a vertical power MOSFET based on n-type gallium oxide-p-type diamond. like figure 2 , Figure 3a to Figure 3f As shown, the preparation method includes:

[0049] S1: choose n + -Ga 2 O 3 Substrate 1 and cleaned.

[0050] Specifically, the doping concentration is selected as 10 18 ~10 20 cm -3 , heavily doped n-type gallium oxide (n + -Ga 2 O 3 ) Substrate 1 and standard cleaning.

[0051] S2: at the n + -Ga 2 O 3 The upper surface of substrate 1 grows n - -Ga 2 O 3 drift layer 2, and the n - -Ga 2 O 3 The doping concentration of the drift layer 2 is less than the n + -Ga 2 O 3 Doping concentration of substrate layer 1 .

[0052] Specifically, using a metal organic chemical vapor deposition (MOCVD) process or a hydride vapor phase epitaxy (HVPE) process, the above heavily doped n + -Ga 2 O 3 Epitaxial growth of low-doped n on one side of substrate 1 - -Ga 2 O 3 t...

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Abstract

The invention discloses a vertical power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) based on n-type gallium oxide and p-type diamond, which comprises an n +-Ga2O3 substrate layer, an n-Ga2O3 drift layer, a p-type diamond base region, an n + source region, a source electrode, a gate electrode and a drain electrode, and is characterized in that the drain electrode, the n +-Ga2O3 substrate layer, the n-Ga2O3 drift layer, the p-type diamond base region and the n + source region are sequentially arranged from bottom to top; the upper surface of the n + source region is provided with a gate groove, and the gate groove extends to the upper surface or the interior of the n-Ga2O3 drift layer; the interior of the gate groove is coated with a gate dielectric layer, and the gate electrode is arranged in the gate groove and is wrapped by the gate dielectric layer; the source electrode is arranged on the upper surface of the n + source region except the n + source region; the doping concentration of the n-Ga2O3 drift layer is smaller than the doping concentration of the n +-Ga2O3 substrate layer. According to the invention, the p-type diamond is adopted to replace p-type gallium oxide which is difficult to realize to form the p-type base region, so that the voltage resistance of the MOSFET device can be enhanced, the reverse leakage current can be reduced, the heat-conducting property can be improved, and the reliability of the device can be improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a vertical power MOSFET based on n-type gallium oxide and p-type diamond and a preparation method thereof. Background technique [0002] Semiconductor devices and application technologies continue to develop in the direction of high speed and high energy efficiency. Traditional Si-based semiconductor devices are limited by their large on-resistance and high temperature performance degradation, and their applications in high frequency and high energy efficiency are becoming more and more physical limits. . The third generation semiconductor material gallium oxide (Ga 2 O 3 ) has a wider band gap, higher thermal conductivity and larger breakdown field strength, among which β-Ga 2 O 3 The forbidden band width of gallium oxide is about 4.9eV, and the theoretical breakdown field strength can reach 8MeV / cm. The gallium oxide material also has good electrical conductiv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/267H01L23/373H01L21/336
CPCH01L29/7813H01L29/267H01L23/3732H01L29/66045
Inventor 侯斌马晓华贾富春陈孝升杨凌张濛武玫郝跃
Owner XIDIAN UNIV