Electrode structure, transistor structure and radio frequency switch structure
An electrode structure and radio frequency switching technology, applied in transistors, circuits, electrical components, etc., can solve the problems of electrode structure tip discharge, affecting the service life, etc., and achieve the effect of improving harmonics, avoiding dispersion and loss, and avoiding the phenomenon of tip discharge.
Pending Publication Date: 2022-08-09
RUIPAN MICROELECTRONICS TECH (SHANGHAI) CO LTD
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[0003] The embodiment of the present invention provides an electrode structure, a transistor structure and a radio frequency switch structure to solve the problem that the electrode structure forms a tip discharge phenomenon and affects its service life
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[0031] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
[0032] It should be understood that the present invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like ...
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The invention discloses an electrode structure, a transistor structure and a radio frequency switch structure. The electrode structure comprises a comb finger connecting part and N conductive comb fingers extending from the comb finger connecting part in the same direction perpendicular to the comb finger connecting part, N is a positive integer larger than or equal to 2, and the angle of the joint between the conductive comb fingers and the comb finger connecting part is an obtuse angle. Therefore, the connection part between the conductive comb fingers and the comb finger connection part is relatively smooth, and the phenomenon of point discharge at the connection part, charge accumulation at the connection part, antenna effect of a transistor structure where the electrode structure is located, damage to the transistor structure and influence on the service life of the transistor structure are avoided.
Description
technical field [0001] The present invention relates to the technical field of radio frequency switch structures, in particular to an electrode structure, a transistor structure and a radio frequency switch structure. Background technique [0002] Existing transistor structures generally include a gate, a source, and a drain. Both the source and the drain are electrode structures that allow current to pass through. The electrode structure here refers to a conductive electrode in the transistor structure that allows current to pass. Generally speaking, the two electrode structures of the source and the drain are finger-like configuration devices. The tip discharge phenomenon will occur during the operation of the existing electrode structure, which will lead to the accumulation of charges, which will cause the antenna effect to occur in the transistor structure where the electrode structure is located, which will damage it. The structure of the transistor affects its service ...
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IPC IPC(8): H01L29/417H01L29/78H01L27/088
CPCH01L29/41725H01L27/088H01L29/78
Inventor 王蕴洲王欢奉靖皓倪建兴
Owner RUIPAN MICROELECTRONICS TECH (SHANGHAI) CO LTD