Photoresist compositions, methods of making and using the same

Abstract

The present application relates to the technical field of photoresist, in particular to a photoresist composition, a preparation method and application thereof.A photoresist composition comprises the following components by mass percentage: phenolic resin 5-40%, photosensitive compound 1-20%, adhesion enhancer 0.01-2%, surface leveling agent 0.01-1% and organic solvent 55-90%; the photosensitive compound is selected from at least two of a first G-line photosensitive compound, a second G-line photosensitive compound and an I-line photosensitive compound; the adhesion enhancer is selected from melamine resin and / or silane coupling agent; and the surface leveling agent is selected from silicon compound and / or fluorocarbon compound.The photoresist composition has high development adhesion, good pattern angle and high sensitivity.

Description

Technical Field

[0001] This invention relates to the field of photoresist technology, and more specifically, to a photoresist composition, its preparation method, and its application. Background Technology

[0002] In the back-end processes of OLED panel manufacturing, the pre-baking temperature range is 80-85℃ due to process requirements. At this baking temperature, the adhesion of photoresist to the substrate is insufficient, easily leading to photoresist distortion and detachment after development. Adjusting the photoresist composition enhances adhesion during development, preventing distortion and detachment of the photoresist-formed pattern after development. Simultaneously, good pattern angles and high sensitivity are maintained to improve production capacity. The method of forming patterns using positive low-temperature photoresist involves coating a layer of photoresist onto the substrate, exposing the photoresist through a photomask. The alkali solubility rate of the exposed photoresist increases significantly after exposure, creating a difference in solubility between the exposed and unexposed areas in the developing solution, thus forming the photoresist pattern.

[0003] In view of this, the present invention is hereby proposed. Summary of the Invention

[0004] One object of the present invention is to provide a photoresist composition to solve the problems of poor photoresist adhesion, excessively high or low pattern angles, and low sensitivity during low-temperature processing. The photoresist composition of the present invention exhibits high adhesion, good pattern angles, and high sensitivity.

[0005] Another object of the present invention is to provide a method for preparing the photoresist composition described above, which is simple and easy to implement and can produce a photoresist composition with high development adhesion, good pattern angle and high sensitivity.

[0006] Another object of the present invention is to provide an application of the aforementioned photoresist composition in the manufacture of low-temperature process layers of OLED panels.

[0007] In order to achieve the above-mentioned objectives of the present invention, the following technical solution is adopted:

[0008] A photoresist composition comprising the following components by weight percentage:

[0009] The composition includes 5%–40% phenolic resin, 1%–20% photosensitive compound, 0.01%–2% adhesion enhancer, 0.01%–1% surface leveling agent, and 55%–90% organic solvent.

[0010] The photosensitive compound is selected from at least two of the first G-line photosensitive compound, the second G-line photosensitive compound, and the I-line photosensitive compound;

[0011] The adhesion enhancer is selected from melamine resin and / or silane coupling agent;

[0012] The surface leveling agent is selected from silicon-based compounds and / or fluorocarbon compounds.

[0013] In one embodiment, the photoresist composition comprises the following components by weight percentage:

[0014] The composition includes 7%–30% phenolic resin, 1.5%–15% photosensitive compound, 0.05%–1.5% adhesion enhancer, 0.05%–0.6% surface leveling agent, and 68%–88% organic solvent.

[0015] In one embodiment, the structure of the first G-line photosensitive compound is shown in formula (I);

[0016]

[0017] The structure of the second G-line photosensitive compound is shown in formula (II);

[0018]

[0019] The structure of the I-line photosensitive compound is shown in formula (III);

[0020]

[0021] In formula (I), at least three of R1, R2, R3, and R4 are independently selected from the structure shown in formula (IV), and the remainder are selected from hydrogen groups; in formula (II), at least two of R5, R6, and R7 are independently selected from the structure shown in formula (IV), and the remainder are selected from hydrogen groups; in formula (III), R8, R9, and R4 are independently selected from the structure shown in formula (IV), and the remainder are selected from hydrogen groups. 10 At least two of them are independently selected from the structure shown in formula (IV), and the remainder are selected from hydrogen groups;

[0022]

[0023] In one embodiment, the photosensitive compound is selected from any two of the first G-line photosensitive compound, the second G-line photosensitive compound, and the I-line photosensitive compound, and the mass ratio between any two photosensitive compounds is (10:90) to (90:10).

[0024] In one embodiment, the mass ratio of the first G-line photosensitive compound to the I-line photosensitive compound is (70:30):(90:10).

[0025] Alternatively, the photosensitive compound is selected from the first G-line photosensitive compound and the second G-line photosensitive compound in a mass ratio of (70:30):(90:10);

[0026] Alternatively, the mass ratio of the second G-line photosensitive compound to the I-line photosensitive compound is (30:70):(70:30).

[0027] In one embodiment, the phenolic resin is a linear phenolic resin; the phenolic resin is a phenolic resin synthesized from m-cresol, p-cresol, and formaldehyde; the structure of the phenolic resin is shown in formula (V).

[0028]

[0029] The ratio of m to n is (4:6) to (6:4).

[0030] In one embodiment, the phenolic resin has a weight-average molecular weight of 3,000 to 20,000 and a molecular weight distribution of 4 to 8.

[0031] In one embodiment, the organic solvent is selected from at least one of ethylene glycol methyl ether acetate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol methyl ether acetate, methyl acetate, n-butyl acetate, ethyl propionate, ethyl lactate, ethyl acetate, n-butyl acetate, methanol, and benzyl alcohol.

[0032] The method for preparing the photoresist composition as described includes the following steps:

[0033] Mix all components thoroughly.

[0034] Application of the photoresist composition described above in the manufacture of low-temperature process layers of OLED panels.

[0035] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0036] (1) The photoresist composition of the present invention has the characteristics of high development adhesion, good pattern angle and high sensitivity through the coordinated action of each component, and is suitable for the manufacture of low temperature process layers of OLED panels.

[0037] (2) The preparation method of the photoresist composition of the present invention is simple and easy to implement, and can prepare a photoresist composition with high development adhesion, good pattern angle and high sensitivity. Attached Figure Description

[0038] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0039] Figure 1The results show the resolution test results of the photoresist composition in Example 5 of this invention. Detailed Implementation

[0040] The embodiments of the present invention will be described in detail below with reference to examples. However, those skilled in the art will understand that the following examples are for illustrative purposes only and should not be considered as limiting the scope of the invention. Unless otherwise specified in the examples, conventional conditions or conditions recommended by the manufacturer are followed. Reagents or instruments whose manufacturers are not specified are all commercially available conventional products.

[0041] According to one aspect of the present invention, the present invention relates to a photoresist composition comprising the following components in weight percentages:

[0042] The composition includes 5%–40% phenolic resin, 1%–20% photosensitive compound, 0.01%–2% adhesion enhancer, 0.01%–1% surface leveling agent, and 55%–90% organic solvent.

[0043] The photosensitive compound is selected from at least two of the first G-line photosensitive compound, the second G-line photosensitive compound, and the I-line photosensitive compound;

[0044] The adhesion enhancer is selected from melamine resin and / or silane coupling agent;

[0045] The surface leveling agent is selected from silicon-based compounds and / or fluorocarbon compounds.

[0046] The photoresist composition of the present invention has the characteristics of high development adhesion, good pattern angle and high sensitivity, and is suitable for the manufacture of low-temperature process layers of OLED panels.

[0047] In one embodiment, the silicon-based compound includes at least one selected from polycyclic methylsiloxane, polydimethylsiloxane, and polymethylhydrosiloxane. The fluorocarbon compound includes at least one selected from perfluorooctyl sulfonyl fluoride, fluorinated acrylate, and trifluoropropyltriethoxysilane.

[0048] In one embodiment, the surface leveling agent is selected from silicon-based compounds and fluorocarbon compounds, wherein the mass ratio of the silicon-based compound to the fluorocarbon compound is (2-5):1.

[0049] In one embodiment, by weight percentage, the phenolic resin is 5%, 8%, 10%, 15%, 20%, 25%, 30%, 35%, or 40%; the photosensitive compound is 1%, 2%, 5%, 8%, 10%, 12%, 15%, 18%, or 20%; the adhesion enhancer is 0.01%, 0.05%, 0.08%, 1%, 1.1%, 1.15%, or 2%; the surface leveling agent is 0.01%, 0.02%, 0.05%, 0.08%, 0.1%, 0.2%, 0.5%, 0.8%, or 1%; and the organic solvent is 60%, 65%, 70%, 75%, 80%, 85%, or 90%, etc. The appropriate proportions of the components in this invention allow for synergistic effects, ensuring the photoresist composition exhibits high developability and adhesion, good pattern angles, and high sensitivity.

[0050] The adhesion enhancer of the present invention can enhance the adhesion between the photoresist composition and the substrate. The structural formula of the melamine resin of the present invention is shown in formula (VI). The structural formula of the silane coupling agent of the present invention is shown in formula (VII). The melamine resin of the present invention can better increase the adhesion for development.

[0051]

[0052] In one embodiment, the photoresist composition comprises the following components by weight percentage:

[0053] The composition includes 7%–30% phenolic resin, 1.5%–15% photosensitive compound, 0.05%–1.5% adhesion enhancer, 0.05%–0.6% surface leveling agent, and 68%–88% organic solvent.

[0054] In one embodiment, the structure of the first G-line photosensitive compound is shown in formula (I);

[0055]

[0056] The structure of the second G-line photosensitive compound is shown in formula (II);

[0057]

[0058] The structure of the I-line photosensitive compound is shown in formula (III);

[0059]

[0060] In formula (I) 2,3,4,4'-tetrahydroxybenzophenone, at least three of R1, R2, R3, and R4 are each independently selected from the structure shown in formula (IV) 2-diazo-1-naphthol-5-sulfonyl, and the remainder is selected from hydrogen groups; in formula (II), at least two of R5, R6, and R7 are each independently selected from the structure shown in formula (IV), and the remainder is selected from hydrogen groups; in formula (III), R8, R9, and R... 110 At least two of them are independently selected from the structure shown in formula (IV), and the remainder are selected from hydrogen groups.

[0061]

[0062] In one embodiment, the photosensitive compound is selected from any two of the first G-line photosensitive compound, the second G-line photosensitive compound, and the I-line photosensitive compound, and the mass ratio between any two photosensitive compounds is (10:90) to (90:10), for example, 10:90, 20:80, 30:70, 40:60, 50:50, 60:40, 70:30, 80:20, 90:10, etc.

[0063] In one embodiment, the mass ratio of the first G-line photosensitive compound to the I-line photosensitive compound is (70:30):(90:10), for example, 10:30, 80:20 or 90:10.

[0064] In one embodiment, the photosensitive compound is selected from the first G-line photosensitive compound and the second G-line photosensitive compound in a mass ratio of (70:30):(90:10); for example, 10:30, 80:20 or 90:10.

[0065] In one embodiment, the mass ratio of the second G-line photosensitive compound to the I-line photosensitive compound is (30:70):(70:30). For example, 30:70, 50:50, 70:30, etc.

[0066] In one embodiment, the phenolic resin is a linear phenolic resin; the phenolic resin is a phenolic resin synthesized from m-cresol, p-cresol, and formaldehyde; the structure of the phenolic resin is shown in formula (V).

[0067]

[0068] The ratio of m to n is (4:6) to (6:4), for example, 5:5.

[0069] In one embodiment, the weight-average molecular weight of the phenolic resin is 3,000 to 20,000, such as 3,000, 4,000, 5,000, 8,000, 10,000, 15,000, or 2,000. The molecular weight distribution is 4 to 8, such as 4, 5, 6, 7, or 8.

[0070] In one embodiment, the organic solvent is selected from at least one of ethylene glycol methyl ether acetate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol methyl ether acetate, methyl acetate, n-butyl acetate, ethyl propionate, ethyl lactate, ethyl acetate, n-butyl acetate, methanol, and benzyl alcohol. The solvent of the present invention may be selected from one or a combination of at least two of the above, such as a combination of propylene glycol methyl ether acetate and methyl acetate, or a combination of ethyl propionate, ethyl lactate, and ethyl acetate.

[0071] According to another aspect of the present invention, the present invention also relates to a method for preparing the photoresist composition as described above, comprising the step of: mixing the components uniformly.

[0072] According to another aspect of the invention, the invention also relates to the use of the photoresist composition as described above in the manufacture of low-temperature process layers of OLED panels.

[0073] The photoresist composition of the present invention can fully meet the application requirements under the condition of a pre-baking temperature of 80-90°C.

[0074] The following explanation, combined with specific embodiments and comparative examples, further illustrates the point.

[0075] Example 1

[0076] A photoresist composition comprising the following components:

[0077] The composition includes 9.7g of phenolic resin, 2.3g of two photosensitive compounds, and 88g of solvent; the leveling agent is 0.5% of the total mass of the photoresist composition, and the adhesion enhancer is 1.2% of the total mass of the photoresist composition.

[0078] The phenolic resin structure is a phenolic resin synthesized from m-cresol, p-cresol and formaldehyde, wherein the mass ratio of m-cresol to p-cresol is 45:55, and the structural formula is shown in formula (V), where m = 22 and n = 29.

[0079]

[0080] The two photosensitive compounds are the first G-line photosensitive compound and the I-line photosensitive compound; the first G-line photosensitive compound is 2.07 g and the I-line photosensitive compound is 0.23 g.

[0081] The structural formula of the first G-line photosensitive compound is shown in formula (I);

[0082]

[0083] The structural formula of the I-line photosensitive compound is shown in formula (III);

[0084]

[0085] In formula (I) 2,3,4,4'-tetrahydroxybenzophenone, R1, R3, and R4 are each independently selected from the structure 2-diazo-1-naphthol-5-sulfonyl as shown in formula (IV), and R2 is selected from a hydrogen group; in formula (III) α,α,α'-tris(4-hydroxyphenyl)-1-ethyl-4-isopropylbenzene, R8 and R 10 Both are independently selected from the structure 2-diazo-1-naphthol-5-sulfonyl as shown in formula (IV), and R9 is selected from hydrogen group;

[0086]

[0087] The adhesion enhancer is melamine resin.

[0088] The solvent is n-butyl acetate and ethylene glycol methyl ether acetate, with a mass ratio of n-butyl acetate to ethylene glycol methyl ether acetate of 1:1.

[0089] The leveling agent is polymethylhydrosiloxane and trifluoropropyltriethoxysilane in a mass ratio of 3:1.

[0090] Example 2

[0091] A photoresist composition, except that the first G-line photosensitive compound is 1.84 g and the I-line photosensitive compound is 0.46 g, and the other conditions are the same as in Example 1.

[0092] Example 3

[0093] A photoresist composition, except that the first G-line photosensitive compound is 1.61 g and the I-line photosensitive compound is 0.69 g, and the other conditions are the same as in Example 1.

[0094] Example 4

[0095] A photoresist composition, except that the two photosensitive compounds are a second G-line photosensitive compound and an I-line photosensitive compound; the second G-line photosensitive compound is 2.07 g and the I-line photosensitive compound is 0.23 g; other conditions are the same as in Example 1.

[0096] The structure of the second G-line photosensitive compound is shown in formula (II);

[0097]

[0098] In formula (II) 2,3,4,-trihydroxybenzophenone, R5 and R7 are each independently selected from the structure 2-diazo-1-naphthol-5-sulfonyl as shown in formula (IV), and R6 is selected from hydrogen.

[0099] Example 5

[0100] A photoresist composition, except that the two photosensitive compounds are a second G-line photosensitive compound and an I-line photosensitive compound; the second G-line photosensitive compound is 1.84 g and the I-line photosensitive compound is 0.46 g; other conditions are the same as in Example 1.

[0101] Example 6

[0102] A photoresist composition, except that the two photosensitive compounds are a second G-line photosensitive compound and an I-line photosensitive compound; the second G-line photosensitive compound is 1.61 g and the I-line photosensitive compound is 0.69 g; other conditions are the same as in Example 1.

[0103] Example 7

[0104] A photoresist composition, except that the two photosensitive compounds are a first G-line photosensitive compound and a second G-line photosensitive compound; the first G-line photosensitive compound is 0.69 g and the second G-line photosensitive compound is 1.61 g; other conditions are the same as in Example 1.

[0105] Example 8

[0106] A photoresist composition, except that the two photosensitive compounds are a first G-line photosensitive compound and a second G-line photosensitive compound; the first G-line photosensitive compound is 1.15 g and the second G-line photosensitive compound is 1.15 g; other conditions are the same as in Example 1.

[0107] Example 9

[0108] A photoresist composition, except that the two photosensitive compounds are a first G-line photosensitive compound and a second G-line photosensitive compound; the first G-line photosensitive compound is 1.15 g and the second G-line photosensitive compound is 1.15 g; other conditions are the same as in Example 1.

[0109] Example 10

[0110] A photoresist composition, except that the second G-line photosensitive compound is 1.84 g and the I-line photosensitive compound is 0.46 g; the adhesion enhancer is 0.7% of the total mass of the photoresist composition, and other conditions are the same as in Example 1.

[0111] Example 11

[0112] A photoresist composition, except that the adhesion enhancer is 1.7% of the total mass of the photoresist composition, and other conditions are the same as in Example 10.

[0113] Example 12

[0114] A photoresist composition, except that the adhesion enhancer is a silane coupling agent, and the adhesion enhancer accounts for 0.7% of the total mass of the photoresist composition, and the other conditions are the same as in Example 10.

[0115] Example 13

[0116] A photoresist composition, except that the adhesion enhancer is a silane coupling agent, is prepared under the same conditions as in Example 10.

[0117] Example 14

[0118] A photoresist composition, except that the adhesion enhancer is a silane coupling agent and the adhesion enhancer accounts for 1.7% of the total mass of the photoresist composition, and the other conditions are the same as in Example 10.

[0119] Comparative Example 1

[0120] A photoresist composition, except that the two photosensitive compounds are a second G-line photosensitive compound and an I-line photosensitive compound, with the second G-line photosensitive compound being 1.84 g and the I-line photosensitive compound being 0.46 g; no adhesion enhancer is added, and other conditions are the same as in Example 1.

[0121] Comparative Example 2

[0122] A photoresist composition, except that the photosensitive compound is only the first G-line photosensitive compound, and other conditions are the same as in Example 1.

[0123] Comparative Example 3

[0124] A photoresist composition, except that the photosensitive compound is only the second G-line photosensitive compound, and other conditions are the same as in Example 1.

[0125] Comparative Example 4

[0126] A photoresist composition, except that the photosensitive compound is only an I-line photosensitive compound, and other conditions are the same as in Example 1.

[0127] Experimental Example

[0128] 1. Method for evaluating the sensitivity of photoresist compositions:

[0129] A photoresist composition was spin-coated onto a silicon wafer, vacuum-dried in a vacuum drying oven (VCD), and then baked on a hot plate at 80°C for 120 seconds to form a hard film of the photoresist composition. The film thickness was measured to be approximately 1.5 μm using a film thickness gauge. Then, the photoresist layer was exposed to different energies using a Broadband exposure machine. After exposure, it was developed with 2.38 wt% tetramethylammonium hydroxide (TMAH) for 70 seconds, washed with water for 25 seconds, and then dried. The exposed portions of the photoresist composition were removed, forming a photoresist pattern. The energy at which complete exposure and development were achieved was recorded, and the sensitivity of the photoresist composition was calculated. Lower exposure energy is more beneficial for improving throughput.

[0130] 2. Evaluation method for the angle of photoresist composition:

[0131] After the photoresist composition is patterned on the silicon wafer, the pattern is inspected using a scanning electron microscope, with 3μm lines as the reference, and the line angles are measured.

[0132] 3. Evaluation method for the development adhesion of photoresist compositions

[0133] A photoresist composition was spin-coated onto a silicon wafer, vacuum-dried in a vacuum drying oven (VCD), and then baked on a hot plate at 80°C for 120 seconds to form a hard film of the photoresist composition. The film thickness was measured to be approximately 1.5 μm using a film thickness gauge. Then, the photoresist layer was exposed to different energies using a Broadband exposure machine. After exposure, it was developed with 2.38 wt% tetramethylammonium hydroxide (TMAH) for 70 seconds, washed with water for 25 seconds, and then dried. The exposed portions of the photoresist composition were removed, forming a photoresist pattern. One hundred 3 μm pillar patterns were identified under an electron microscope, and the number of pillars that detached was counted. The fewer the pillars that detached, the better the development adhesion; the more pillars that detached, the worse the development adhesion.

[0134] The test results are shown in Table 1. The test results for the resolution of the photoresist composition in Example 5 of this invention are as follows: Figure 1 As shown.

[0135] Table 1 Test Results

[0136]

[0137]

[0138] As shown in Table 1, the photoresist composition of the present invention exhibits high development adhesion, good pattern angle, and high sensitivity. Specifically, the angle and sensitivity results of Examples 1-9 demonstrate that the combination of the second G-line photosensitive compound and the I-line photosensitive compound achieves good pattern angle and high sensitivity. The development adhesion results of Examples 5 and 10-14 show that the development adhesion of the photoresist composition increases with the increase in the amount of adhesion enhancer added. At the same dosage, melamine resin as the adhesion enhancer has a better effect on increasing development adhesion than silane coupling agent. Comparing the development adhesion results of Examples 5 and 10-11 shows that melamine resin as the adhesion enhancer can significantly increase development adhesion even at a small dosage, making it a very good development adhesion enhancer.

[0139] Comparing the development adhesion results of Comparative Example 1 and Examples 10-14, it can be seen that the development adhesion of the photoresist composition is very poor without the addition of any adhesion enhancer.

[0140] Comparing the angle results of Comparative Examples 2, 3, and 4, it can be seen that the angle using the second G-line photosensitive compound is lower, the angle using the first G-line photosensitive compound is moderate, and the angle using the I-line photosensitive compound is higher. The I-line photosensitive compound is more effective in improving the angle of the photoresist composition. Comparing the sensitivity results of Comparative Examples 2, 3, and 4, it can be seen that the second G-line photosensitive compound requires less energy and has high sensitivity characteristics, the first G-line photosensitive compound requires slightly more energy, and the I-line photosensitive compound requires even more energy, all of which have low sensitivity characteristics. Lower energy requirements are more beneficial for improving production capacity, and the second G-line photosensitive compound has the effect of improving production capacity. From the angle and sensitivity results of Comparative Examples 2, 3, and 4, it can be seen that two photosensitive compounds must be used to obtain good pattern angles and high sensitivity characteristics.

[0141] In summary, the photoresist composition of this invention can meet the manufacturing requirements of low-temperature process layers in OLED panels.

[0142] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A photoresist composition characterized by comprising: The components include the following percentages by mass: The composition includes 5%–40% phenolic resin, 1%–20% photosensitive compound, 0.01%–2% adhesion enhancer, 0.01%–1% surface leveling agent, and 55%–90% organic solvent. The photosensitive compound is selected from the second G-line photosensitive compound and the I-line photosensitive compound; The adhesion enhancer is selected from melamine resin and / or silane coupling agent; The surface leveling agent is selected from silicon-based compounds and / or fluorocarbon compounds; The structure of the second G-line photosensitive compound is shown in formula (II); Formula (II); The structure of the I-line photosensitive compound is shown in formula (III); Formula (III); wherein, in formula (II), at least two of R5, R6and R7are each independently selected from the structure as shown in formula (IV), and the rest is selected from a hydrogen group; in formula (III), at least two of R8, R9and R 10 are each independently selected from the structure as shown in formula (IV), and the rest is selected from a hydrogen group; Formula (IV).

2. The photoresist composition of claim 1, wherein The photoresist composition comprises the following components by weight percentage: The composition includes 7%~30% phenolic resin, 1.5%~15% photosensitive compound, 0.05%~1.5% adhesion enhancer, 0.05%~0.6% surface leveling agent, and 68%~88% organic solvent.

3. The photoresist composition of claim 1, wherein The mass ratio of the second G-line photosensitive compound to the I-line photosensitive compound is (30~70):(70~30).

4. The photoresist composition of claim 1, wherein The phenolic resin is a linear phenolic resin; the phenolic resin is a phenolic resin synthesized from m-cresol, p-cresol and formaldehyde; the structure of the phenolic resin is shown in formula (V). Formula (V); The ratio of m to n is (4:6) to (6:4).

5. The photoresist composition of claim 4, wherein The phenolic resin has a weight-average molecular weight of 3,000 to 20,000 and a molecular weight distribution of 4 to 8.

6. The photoresist composition of claim 1, wherein The organic solvent is selected from at least one of ethylene glycol methyl ether acetate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol methyl ether acetate, methyl acetate, ethyl propionate, ethyl lactate, ethyl acetate, n-butyl acetate, methanol, and benzyl alcohol.

7. The method for producing a photoresist composition according to any one of claims 1 to 6, wherein Includes the following steps: Mix all components thoroughly.

8. The use of the photoresist composition as described in any one of claims 1 to 6 in the manufacture of low-temperature process layers of OLED panels.

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