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Method for monitoring measuring chemicomechanical grinding

A chemical mechanical and grinding process technology, applied in the field of planarization process, can solve the problems of difficulty in mass production, high dependence of chemical mechanical grinding process and wafer products, and achieve the effect of reducing dependence

Inactive Publication Date: 2005-01-19
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, the chemical mechanical polishing process is highly dependent on wafer products, and it is difficult to achieve the purpose of mass production

Method used

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  • Method for monitoring measuring chemicomechanical grinding
  • Method for monitoring measuring chemicomechanical grinding
  • Method for monitoring measuring chemicomechanical grinding

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Embodiment Construction

[0032] The present invention provides a method for monitoring and measuring the thickness change of the semiconductor thin film structure, to eliminate the problem that the grinding stop layer is not easy to control in the traditional chemical mechanical grinding process, so that the component area of ​​the semiconductor wafer can play its due function, and provide the subsequent process. High flatness surface required.

[0033] As described in the background of the invention, the present invention also utilizes an optical measuring mechanism to carry out synchronous measurement thickness of the surface film thickness of a specific test area (PCM key) on the semiconductor wafer in the grinding process, so as to determine the surface of the semiconductor wafer to be ground. Whether the thickness of the film layer has reached the endpoint (endpoint), and the grinding process is terminated. In an embodiment of the present invention, the size of the test area can be a specific are...

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Abstract

A monitoring and measuring method for chemicomechanical grinding of thin semiconductor film is characterized by that the thin film structure in the test region is etched to make the pattern density of the thin film structure in test region equal to that in element region, so it can measure the thickness variation of thin film in element region in the grinding procedure.

Description

technical field [0001] The invention relates to a semiconductor manufacturing method, in particular to a flattening process used in the semiconductor process, which is used for monitoring and measuring the thickness change of the semiconductor thin film structure. Background technique [0002] As semiconductor manufacturing technology has developed to the stage of ultra large scale integration (ULSI), a single integrated circuit chip may contain as many as millions, even tens of millions of components. Therefore, the size of transistors, capacitors, conductor connections, and isolation regions on integrated circuit chips must be reduced to manufacture higher-density chips. In order to produce sub-micrometer and smaller components in the future, challenges such as planarization process, etching process, and photolithography process must be overcome to form high-reliability components and chips. [0003] In the existing process of the integrated circuit, the active area of ​​...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23Q15/02B23Q17/20H01L21/66
Inventor 苏俊联秦启元卓世耿陈铭祥林益世
Owner MACRONIX INT CO LTD