Rotary base and semiconductor device

Abstract

The application discloses a rotating base and a semiconductor device, the rotating base comprising: a bearing seat for bearing a wafer; a supporting shaft coaxially connected below the bearing seat; a detection part fixedly arranged with the supporting shaft, comprising at least two detection zones arranged in sequence around the axis of the supporting shaft, the adjacent detection zones having different radiation energy values at the same temperature; a detector located at a preset detection position outside the detection part, for detecting the radiation energy values of the detection zones; a controller connected with the detector, for calculating the rotating speed of the supporting shaft according to the cycle period of the different radiation energy values detected by the detector; and a driving assembly for driving the supporting shaft to synchronously rotate the bearing seat and the detection part, and adjusting the rotating speed of the supporting shaft according to the feedback of the controller. The rotating base can be applied to a silicon carbide epitaxial device in the whole process, and can accurately detect the rotating speed of the base, so as to stably control the base and ensure excellent process results.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a rotating base and a semiconductor device. Background Technology

[0002] Silicon carbide, as a third-generation semiconductor material, possesses advantages such as high thermal conductivity and high-temperature stability, making it suitable for fabricating high-power, high-frequency devices. Currently, semiconductor devices based on silicon carbide are widely used in communications, transportation, and power industries. Silicon carbide epitaxial equipment is a type of semiconductor processing equipment that typically grows a high-quality silicon carbide epitaxial layer on a silicon carbide substrate. This epitaxial layer has a significant impact on device yield. The uniformity of the epitaxial layer thickness, as a key metric for process results, plays a crucial role in product yield.

[0003] The robotic arm transfers the tray and wafer assembly into the process chamber and places it at the center of the air-float base according to a preset position. To ensure good thickness uniformity of the epitaxial layer, a certain flow rate of gas is typically introduced into the air-float base to rotate it. Since the tray and wafer are placed on the air-float base, the rotation of the air-float base simultaneously rotates the tray and wafer.

[0004] Because the wafer rotation speed is affected by the depletion curve of the reactive gas, it directly affects the uniformity of the epitaxial layer. Therefore, accurately detecting the rotation speed in order to stabilize and control it is one of the keys to ensuring excellent process results. Summary of the Invention

[0005] In view of this, the purpose of this application is to provide a rotating base and semiconductor device that can accurately detect the rotation speed so as to stabilize and control it and ensure excellent process results.

[0006] To achieve the above objectives, this application provides the following technical solution:

[0007] A rotating base, comprising:

[0008] A support base is used to hold a wafer.

[0009] A support shaft is located below the bearing seat and rotates synchronously with it;

[0010] The detection unit is fixedly disposed with the support shaft. The detection unit includes at least two detection zones arranged sequentially around the axis of the support shaft. The radiation energy values ​​of adjacent detection zones are different at the same temperature.

[0011] A detector, located at a preset detection position outside the detection unit, is used to detect the radiation energy value of each detection zone;

[0012] A controller, connected to the detector, is used to calculate the rotational speed of the support shaft based on the cycle period of different radiation energy values ​​detected by the detector;

[0013] A drive assembly is used to drive the support shaft to rotate synchronously with the bearing seat and the detection unit, and to adjust the rotation speed of the support shaft according to the rotation speed information fed back by the controller.

[0014] Optionally, in the above-mentioned rotating base, the detection part is sleeved outside the support shaft, or the detection part is located on the side of the support shaft and integrally formed therewith; a plurality of detection areas are arranged sequentially around the central axis of the support shaft, and each detection area is a cylindrical blade with a fan-shaped cross-section;

[0015] The minimum angle θ of the sector is

[0016] θ=[(S max [60) / 1000 / 360*Ts]

[0017] S max The maximum rotational speed of the detection unit is expressed in rpm.

[0018] Ts is the sampling time of the detector, in milliseconds (ms).

[0019] Optionally, in the above-mentioned rotating base, the angle of the sector is not less than 20°.

[0020] Optionally, in the aforementioned rotating base, the materials of the two adjacent detection zones respectively include alumina and silicon carbide.

[0021] A semiconductor device includes: a reaction chamber, a first heating element, and the rotating base described above;

[0022] The first heating element includes a first heating plate located within the reaction chamber;

[0023] In the rotating base: the bearing seat is rotatably disposed on the top surface of the first heating plate, the support shaft passes through the upper and lower surfaces of the first heating plate, the detection part is located inside the reaction chamber and below the first heating plate, and the detector is located outside the reaction chamber.

[0024] Optionally, in the above-mentioned semiconductor device, the detector includes an objective lens, an optical lens, a flat lens, a filter grating, a beam splitter, and an infrared photoelectric element arranged along the transmission path, so as to convert the collected radiation energy value of the detection area into an electrical signal and send it to the controller.

[0025] Optionally, the above-mentioned semiconductor device further includes a conductive optical fiber, wherein:

[0026] The head end of the conductive optical fiber is close to the detection unit and located at any point radially outside the support shaft, for collecting and transmitting the radiation energy of the detection area;

[0027] The end of the conductive optical fiber is close to or connected to the receiving end of the detector, and is used to transmit the collected radiation energy to the detector.

[0028] Optionally, the semiconductor device described above also includes a filter located between the end of the conductive optical fiber and the receiving end of the detector.

[0029] Optionally, in the above-described semiconductor device, the driving component includes:

[0030] A gas-driven unit is fixedly connected to the support shaft;

[0031] An air intake assembly is used to inject gas into the gas drive unit to drive the gas drive unit to rotate synchronously with the support shaft, the detection unit and the carrier.

[0032] A gas flow controller, connected to the controller, is used to control the flow rate of the gas.

[0033] Optionally, in the above-described semiconductor device, the air intake assembly includes:

[0034] An annular jet section has multiple jet holes spaced circumferentially on its annular side near the gas drive section.

[0035] The connecting part is fixedly connected to and communicates with the annular jet part, and is used to connect to an external air source.

[0036] Optionally, the above-mentioned semiconductor device further includes:

[0037] The first air duct has one end located outside the reaction chamber for connecting to an external air source, and the other end located inside the reaction chamber and connected to the air intake assembly.

[0038] The second gas guide tube is located outside the reaction chamber. One end is connected to the first gas guide tube or an external gas source, and the other end is close to the optical fiber. It is used to spray gas into at least a part of the optical fiber that is away from the detection unit.

[0039] Optionally, in the above-mentioned semiconductor device, the gas driving unit is further configured to: when the gas inlet assembly injects gas into the gas driving unit, drive the support shaft, the detection unit, and the carrier to float upward by a preset distance h under the drive of the gas.

[0040] Optionally, in the above-described semiconductor device, the gap distance between the conductive optical fiber and the detection unit in the radial direction of the support shaft is d;

[0041] In the axial direction of the support shaft, the height difference between the bottom of the conductive optical fiber and the bottom of the detection component is x, where x ≥ h;

[0042] The axial thickness of the detection part is m, where m ≥ 2d + h.

[0043] Optionally, in the above-described semiconductor device, the controller is configured to generate a pulse waveform diagram based on each of the different radiation energy values ​​and its duration, and to calculate the rotational speed of the detection unit based on the pulse waveform diagram.

[0044] Optionally, in the above-described semiconductor device, the first heating element further includes a first cavity located below the first heating plate;

[0045] The detection unit is located in the first cavity;

[0046] The jet end of the air intake assembly is located in the first cavity.

[0047] Optionally, the semiconductor device described above also includes a quartz outer cavity and an air inlet flange disposed on the air inlet side of the quartz outer cavity;

[0048] The head end of the conductive optical fiber is located inside the reaction chamber, and the end end of the conductive optical fiber is located outside the reaction chamber and passes through the air inlet flange before connecting to the detector.

[0049] One end of the first air guide pipe is located inside the reaction chamber and connected to the air intake assembly, while the other end is located outside the reaction chamber and passes through the air intake flange to connect to the external air source.

[0050] In the rotating base provided in this application, since multiple (more than two in this document) detection zones are arranged circumferentially on the side of the detection unit, and the radiation energy values ​​of adjacent detection zones are different at the same temperature, the radiation energy value detected at any point on the radial outer side of the detection unit changes cyclically with the rotation of the detection unit during the synchronous rotation of the support shaft and the detection unit. When the support shaft and the detection unit rotate synchronously for one revolution, the change curve of the radiation energy value detected at that point presents a cycle. Thus, the actual rotation speed of the detection unit can be calculated from the change of the detected radiation energy value, and this actual rotation speed is also the actual rotation speed of the support shaft and the bearing seat.

[0051] As can be seen, in this rotating base, multiple detection zones with different radiation energy values ​​are arranged around the central axis of the support shaft, forming a detection unit. During the synchronous rotation of the support shaft and the detection unit, the time required for each revolution of the support shaft and the detection unit can be measured by observing the change in radiation energy at a preset detection position near the detection unit. This allows for the calculation of the rotational speed of the support shaft and the detection unit (i.e., the actual rotational speed of the bearing seat), demonstrating high real-time performance. Furthermore, since all detection zones are within the same temperature field during rotation, temperature consistency across all detection zones is ensured, effectively preventing adverse effects of temperature changes on the detection results.

[0052] The semiconductor device provided in this application, by having the aforementioned rotating base, enables rotational speed measurement throughout the entire process and effectively avoids the influence of chamber temperature changes on the rotational speed measurement results, thus enabling base rotational speed measurement throughout the entire process cycle. Attached Figure Description

[0053] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0054] Figure 1 This is a schematic diagram of the structure of a silicon carbide epitaxial chamber provided in this application.

[0055] Figure 2 This is a schematic diagram of the connection structure between the bearing seat and the impeller provided in this application.

[0056] Figure 3 This is a schematic diagram of a high-temperature meter speed measuring structure provided in this application.

[0057] Figure 4 This is a structural schematic diagram of an air-floating base provided in this application.

[0058] Figure 5 An isometric view of a detection unit consisting of multiple detection zones, provided for this application.

[0059] Figure 6 This application provides a schematic diagram of the end face structure of a detection unit consisting of multiple detection zones.

[0060] Figure 7 This is a schematic diagram of the end face structure of a gas-driven part provided in this application.

[0061] Figure 8 A cross-sectional view of a semiconductor device provided in this application.

[0062] Figure 9 This is a structural cross-sectional view of an air intake assembly provided in this application.

[0063] Figure 10 This application provides a schematic diagram of the structure for connecting a conductive optical fiber and an air duct to an air inlet flange.

[0064] Figure 11 This application provides a schematic diagram of the measurement position relationship between a detection unit and a conductive optical fiber.

[0065] Figure 12 A simplified diagram of the internal structure of a detector provided in this application.

[0066] Figure 13 This application provides a schematic diagram illustrating the change in radiation energy during the rotation of a detection unit consisting of two different materials and four detection zones.

[0067] Figure 14 This is a schematic diagram of a speed closed-loop control system provided in this application. Detailed Implementation

[0068] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0069] Related technologies

[0070] Currently, silicon carbide epitaxial equipment primarily employs chemical vapor deposition (CVD) to grow a high-quality silicon carbide epitaxial layer on a silicon carbide substrate. Some silicon carbide epitaxial equipment utilizes a chamber structure in its reaction environment that allows for the measurement of wafer rotation speed. Please refer to [link to details]. Figure 1 , Figure 1 This is a schematic diagram of the reaction chamber of a silicon carbide epitaxial device. The reaction chamber mainly includes a first heating element 5 (i.e., the lower half-moon graphite part), an air-floating base 7 (used to support the wafer 6 and drive the wafer to rotate), a second heating element 4 (i.e., the upper half-moon graphite part), as well as an upper insulation felt 1, a lower insulation felt 2, an exhaust gas insulation felt 3, an inlet gas insulation felt 8, an inlet square tube 9, and an argon gas inlet channel 10.

[0071] Among them, such as Figure 2As shown, the air-bearing base 7 consists of a carrier 71 (typically made of graphite), a hollow shaft 72, a support shaft 73, an impeller 74, and a locking nut 75. The impeller 74 is fixed to the support shaft 73 by the locking nut 75, and the other end of the support shaft 73 is connected to the bottom of the carrier 71 via a threaded connection. When the carrier 71 rotates, the impeller 74 also rotates. The rotational speed of the impeller 74 directly represents the rotational speed of the carrier 71 and the wafer 6. In the current process environment, the rotational speed of the carrier 71 is typically between 10 rpm and 70 rpm.

[0072] like Figure 3 As shown, in Figure 1 A pyrometer 78 is installed outside the reaction chamber shown to measure the temperature of the impeller 74 and the exhaust gas insulation felt 3. During the rotation of the support base 71 of the air-float base 7, the impeller 74, driven by the support shaft 73, rotates synchronously with the support base 71 and the wafer 6. At this time, the infrared beam 77 of the pyrometer 78 passes through the quartz observation window and the opening of the intake insulation felt 8, striking the blades of the impeller 74 and the exhaust gas insulation felt 3 respectively. Once thermal equilibrium is reached within the reaction chamber, a stable temperature difference exists between the blades of the impeller 74 and the exhaust gas insulation felt 3. During the rotation of the air-float base 7, the pyrometer 78 can detect the temperature data of both the impeller 74 blades and the exhaust gas insulation felt 3. By statistically analyzing the temperature change trend detected by the pyrometer 78 per unit time, the rotational speed data of the air-float base 7 (which is also the rotational speed data of the wafer 6) can be calculated.

[0073] However, during the process of the reaction chamber heating up from the standby temperature to the process temperature, the heating rate of the impeller 74 blades is affected by the secondary heating of the first heating element 5 and the air-float base 7, resulting in an alternating upward trend in the blade temperature and the exhaust gas temperature. At this time, during the rotation of the impeller 74, the temperature measuring point of the pyrometer 78 is located on both the exhaust gas insulation felt 3 and the blades of the impeller 74. Because the temperatures of the exhaust gas insulation felt 3 and the blades of the impeller 74 are alternating or there is no significant temperature difference, the pyrometer 78 cannot collect effective temperature changes per unit time, and therefore cannot calculate the actual rotational speed of the air-float base 7 and the wafer 6, resulting in distorted rotational speed measurement results.

[0074] In addition, the pyrometer 78 is installed on the inlet flange, which is located outside the inlet insulation felt 8. The inlet insulation felt 8, quartz square tube support and other devices are set apart on the measurement optical path between the pyrometer 78 and the impeller 74 being measured. Moreover, particles inevitably accumulate on the quartz observation window. These factors have a certain impact on the precision of the pyrometer 78. Therefore, as the process time continues to increase, the measured temperature of the pyrometer 78 may show abnormal values ​​within the measurement cycle, affecting the accuracy of the rotational speed measurement results of the air-float base 7.

[0075] Exemplary embodiments

[0076] To address the issue of unstable detection of the air-floating base rotation speed during the heating and cooling stages of silicon carbide epitaxial equipment throughout the entire process, embodiments of this application provide a rotating base equipped with a speed control function, and a semiconductor device equipped with the rotating base.

[0077] Please see Figures 2 to 12 The rotating base provided in this application includes a carrier 71 for supporting a wafer and a rotation speed control system. The rotation speed control system includes a support shaft 73, a detection unit 741, a detector 110, a controller 115, and a drive assembly. The support shaft 73 is located below the carrier 71 and is coaxially connected to it. The detection unit 741 is fixedly connected to the support shaft 73 and includes at least two detection zones arranged sequentially around the axis of the support shaft 73. The radiation energy values ​​of adjacent detection zones are different at the same temperature. The detector 110 is located at a preset detection position outside the detection unit 741 and can detect the radiation energy values ​​of each detection zone. The controller 115 is connected to the detector 110 and can calculate the rotation speed when the detection unit 741 and the support shaft 73 rotate synchronously based on the cycle period of the different radiation energy values ​​detected by the detector 110. The drive assembly can drive the support shaft 73 to drive the carrier 71 and the detection unit 741 to rotate synchronously, and adjust the actual rotation speed of the support shaft 73 according to the rotation speed information fed back by the controller.

[0078] It should be noted that since the side of the detection unit 741 is provided with multiple (more than two in this article) detection zones along the circumferential direction, and the radiation energy values ​​of adjacent detection zones are different at the same temperature, the radiation energy value detected at any point near the detection unit 741 changes cyclically with the rotation of the detection unit 741 and the support shaft 73 during the synchronous rotation of the detection unit 741 and the support shaft 73. When the detection unit 741 and the support shaft 73 rotate synchronously for one revolution, the curve of the change in radiation energy value detected at any point near it presents a cycle. Therefore, the actual rotation speed of the detection unit 741 and the support shaft 73 when they rotate synchronously can be calculated from the change in the detected radiation energy value, which is also the actual rotation speed of the bearing seat 71.

[0079] As can be seen, in this rotating base, multiple detection zones with different radiation energy values ​​are arranged around the central axis of the support shaft 73, forming a detection unit 741. During the synchronous rotation of the support shaft 73 and the detection unit 741, the time required for each revolution of the support shaft 73 and the detection unit 741 can be measured by monitoring the change in radiation energy at a preset detection position near the detection unit 741. This allows for the calculation of the rotational speed of the support shaft 73 and the detection unit 741 (i.e., the actual rotational speed of the bearing pedestal 71), resulting in high real-time performance. Furthermore, since each detection zone is within the same temperature field during rotation, the temperature of each detection zone can be kept consistent, ensuring relatively stable performance. Figure 3 In contrast to the solution where the impeller 74 and the exhaust gas insulation felt 3 have similar temperatures at the observation points during the heating process, leading to the failure of the measurement method, this application can effectively avoid the adverse effects of temperature changes on the detection results.

[0080] In practical implementation, the rotating base provided in this application can be used in semiconductor equipment to measure the rotational speed of the support pedestal 71 supporting the wafer. In this case, the support pedestal 71 is coaxially connected to the support shaft 73 and the detection unit 741, and rotates synchronously. When the rotational speed of the detection unit 741 is measured by the rotational speed control system, the speed at which the support pedestal 71 drives the wafer to rotate can be determined, facilitating monitoring and stable control. It is evident that the rotating base equipped with a rotational speed control system provided in this application can achieve rotational speed measurement throughout the entire process, and can effectively avoid the influence of chamber temperature changes on the rotational speed measurement results, enabling base rotational speed measurement throughout the entire process cycle.

[0081] In some embodiments, the detection unit 741 has a cylindrical structure, which is divided circumferentially into multiple detection zones arranged sequentially around the central axis of the support shaft 73. Each detection zone is a cylindrical blade with a fan-shaped cross-section (the cross-section refers to the cross-section perpendicular to the central axis of the support shaft). Generally, adjacent detection zones are made of different materials so that adjacent detection zones have different radiation energy values. Since the multiple detection zones in the detection unit 741 are composed of fan-shaped blade structures with different radiation energy values, the fan-shaped angle of each detection zone's cross-section determines its time proportion during rotation, so that its radiation energy value during rotation can be stably detected within a certain period, forming pulse waveforms with different duty cycles. To ensure that each detection zone can be stably detected, each fan-shaped angle is not less than 20°, that is, the fan-shaped angle of the fan-shaped cross-section of each detection zone is greater than or equal to 20°, so as to ensure that each detection zone can be stably detected. In specific implementations, the fan-shaped angles of adjacent detection zones can be the same or different (for example, see...). Figure 6This means that the surface areas of the circumferential sides of adjacent detection zones can be the same or different. Furthermore, the sector angle needs to be calculated based on the sampling frequency and maximum rotational speed of the detector 110. In this application, it is assumed that the maximum rotational speed when the support shaft 73 and the detection unit 741 rotate synchronously is S. max (Unit: rpm), the sampling time of detector 110 is Ts (unit: ms), and the minimum angle of the sector cross-section of each detection area is θ, then we have

[0082] θ=[(S max / 60) / 1000 / 360*Ts].

[0083] Emissivity refers to the degree to which the radiant energy radiated per unit area of ​​an object's surface approximates the radiant energy of a standard blackbody. This index varies with conditions such as the surface roughness of the object being measured, temperature, and measurement wavelength (the wavelength referred to in this article refers to the wavelength of the object's radiant energy), and the value ranges from 0 to 1. According to publicly available data, silicon carbide has an emissivity of approximately 0.73 at a wavelength of 1 micrometer, while alumina has an emissivity of 0.25 to 0.3 at a wavelength of 1 micrometer. Furthermore, the emissivity of these materials does not change significantly with temperature. Therefore, this application uses alumina and silicon carbide as materials for different detection zones. Each detection zone is a fan-shaped columnar blade structure, and multiple fan-shaped columnar blades combined form a hollow cylindrical detection section 741.

[0084] For example, see Figure 5 and Figure 6The detection unit 741 includes a first central hole 7415 and a plurality of fan-shaped columnar blades arranged sequentially around the first central hole 7415. The outer arc surface of each fan-shaped columnar blade is the detection area mentioned in this application. Taking four detection zones as an example, the side of the detection unit 741 is divided circumferentially into a first detection zone 7411, a second detection zone 7412, a third detection zone 7413, and a fourth detection zone 7414. Specifically: the first detection zone 7411 and the third detection zone 7413 are both provided with a first material (e.g., alumina); the second detection zone 7412 and the fourth detection zone 7414 are both provided with a second material different from the first material (e.g., silicon carbide); the fan-shaped angles occupied by the first detection zone 7411 and the third detection zone 7413 within the circumferential range of the detection unit 741 are both first angles, which are any values ​​within the range of 20° to 70°, for example, 45°; the fan-shaped angles occupied by the second detection zone 7412 and the fourth detection zone 7414 within the circumferential range of the detection unit 741 are both second angles, which are between 110° and 160°, for example, 135°. The detection unit 741 engages with the support shaft 73 located at the bottom of the bearing seat 71 through the first central hole 7415, thereby coaxially fixing the detection unit 741, the support shaft 73, and the bearing seat 71 and allowing them to rotate synchronously. However, this is not a limitation; in other embodiments, any two or all three parts of the detection unit 741, support shaft 73, and bearing seat 71 can be integrated as a single structural component, for example, the detection unit 741 and the support shaft 73 can be integrally formed. During the rotation of the detection unit 741, the controller 115 can generate a pulse waveform diagram based on each radiation energy value and its duration among the different radiation energy values ​​of multiple detection zones in the detection unit 741. (This pulse waveform diagram can be found in...) Figure 13 The rotational speed of the detection unit 741 is calculated based on the pulse waveform diagram, thereby measuring the rotational speed of the carrier 71 and the wafer above it.

[0085] In some embodiments, to ensure reliable connection and synchronous rotation between the cylindrical blades in each detection zone and the support shaft 73, and to prevent them from becoming loose during rotation, a dovetail groove structure is provided on the inner end of each cylindrical blade, and a protruding rib adapted to the dovetail groove structure is provided on the side of the support shaft 73, thereby achieving a stable connection between the cylindrical blades and the support shaft 73. For details, please refer to... Figure 6 .

[0086] Please see Figure 12 In some embodiments, the detector 110 is provided with an objective lens 1101, an optical lens 1102, a flat lens 1103, a filter grating 1104, a beam splitter 1105, and an infrared photoelectric element 1106 along the transmission path to convert the collected radiation energy value of the detection area into an electrical signal and send it to the controller 115.

[0087] Moreover, such as Figure 8As shown, a conductive optical fiber 104 is disposed between the detection unit 741 and the detector 110. The head end of the conductive optical fiber 104 is generally located at any point radially outside the detection unit 741. To effectively conduct the radiated energy in the detection area and ensure close-range detection at a small viewing angle to reduce the influence of background radiation on the measurement results, the head end of the conductive optical fiber 104 needs to be as close as possible to the detection area to collect and conduct the radiated energy in the detection area. The end of the conductive optical fiber 104 is close to or connected to the receiving end of the detector 110 to transmit the collected radiated energy to the detector 110. Furthermore, a filter is disposed between the end of the conductive optical fiber 104 and the receiving end of the detector 110, allowing only radiated energy of specific wavelengths to pass through.

[0088] In specific implementation, the transmission fiber 104 (hereinafter referred to as fiber) can be made of sapphire fiber, and a ceramic sleeve 103 is provided on the outside of the sapphire fiber. During the detection process, the radiation energy of the detection area is transmitted through the fiber 104 to the objective lens 1101 of the receiving end of the detector 110. Then, the short-wavelength (visible light part) radiation energy is filtered out by the refraction / reflection of the optical lens 1102 and the flat lens 1103, while the infrared wavelength radiation energy can pass through. The filter grating 1104 can pass through the radiation energy of a specific wavelength range, while the radiation energy of other wavelengths is filtered out. The radiation energy of the specific wavelength range is then split by the beam splitter 1105 and reflected onto the infrared photoelectric element 1106.

[0089] The formula for converting radiant energy to an object's emissivity is:

[0090] μ λ =ε λ ·(c / λ 5 )·[exp(c / (λT))-1] -1

[0091] Where, μ λ λ is the radiant energy, λ is the wavelength, and ε is the radiant energy. λ λ is the emissivity of the object corresponding to wavelength λ, c is the speed of light, and T is the current temperature.

[0092] In practical implementation, each detection zone in the detection unit 741 is mounted on the support shaft 73 through the first central hole 7415, located in the internal cavity of the first heating element 5 (see [reference]). Figure 8In the first cavity 50 shown, the temperature of each detection area is mainly heated by the heat transferred to the interior by the first heating element 5 after induction heating. Therefore, the internal temperature field of the first heating element 5 is uniform, and the detection areas of different materials in the detection section 741 are all in the same temperature field, with consistent temperature change characteristics. The formula shows the relationship between wavelength, temperature, emissivity, and radiant energy. The detector 110 only detects radiant energy of a specific wavelength, and the emissivity of the material selected in this application changes little due to temperature. At the same time, each detection area is in the same temperature field, and there is no significant temperature difference between different detection areas. Therefore, the emissivity of the material itself directly affects the magnitude of the detector's detection value. To facilitate the calculation by the controller 115, the infrared photoelectric element 1106 in the detector 110 receives the radiant energy of a specific wavelength and linearly converts it into an electrical signal, which is then output to the controller 115. The controller 115 calculates the electrical signal I output by the detector 110. test Radiant energy μ converted into an object test At this time, μ test =I test ·(μ max -μ min ) / (I max -I min ). Among them, I max I min These represent the maximum and minimum values ​​of the detector's output electrical signal, μ. max μ min These represent the maximum and minimum values ​​detected by the detector, respectively.

[0093] If the sampling frequency of detector 110 is too low, it cannot accurately reproduce the true signal; if the sampling frequency is too high, it will generate a large amount of data. According to the Nyquist sampling theorem, when the sampling frequency f... s Greater than the highest frequency f of the measured signal m When the sampling frequency is twice that of the original, the sampled signal can effectively retain the original information. Based on a margin of 2-3 times the blade rotation speed, the blade rotation speed is calculated to be approximately 10 rpm to 210 rpm, with a maximum speed of 3.5 revolutions per second. At this speed, detector 110 needs to detect changes in 14 pulse cycles per second, i.e., a frequency of 14 Hz. Therefore, the sampling frequency of detector 110 should not be lower than 28 Hz, i.e., the sampling period should not be higher than 35 ms. Controller 115 calculates the rotation speed of detection unit 741 (which is also the rotation speed of carrier 71 and wafer) by collecting and storing the changes in the radiated energy of the object per unit time.

[0094] Specifically, with Figure 5Taking the four detection zones shown as examples, when detector 110 detects silicon carbide material, the radiation energy calculated by the controller is μ2; when it detects alumina material, the radiation energy calculated by the controller is μ1. Based on the blade structure where the detection zones are located, it can be seen that when the detection unit 741 rotates one revolution, detector 110 can detect two peak values ​​and two valley values ​​of radiation energy changes, such as... Figure 13 As shown in the diagram. The horizontal axis represents the sampling period, i.e., sampling is performed at fixed time intervals. By counting the number of sampling points of the controller over two cycles of collecting data on the changes in radiant energy, the time required for one revolution can be calculated. The vertical axis represents the fan blade radiant energy calculated by the controller.

[0095] When detector 110 and controller 115 detect two peaks and two troughs in the radiation energy change curve of detection unit 741, it indicates that detection unit 741 has rotated one revolution. The sampling periods for the peaks and troughs are counted as m and n, respectively. The sampling time of detector 110 is Ts (in milliseconds). Therefore, the rotational speed S (in revolutions per minute) of detection unit 741 is calculated using the formula S = 60 / [Ts * (m + n)]. The rotational speed measurement result obtained using this method has a fast response time; generally, the rotational speed can be calculated simply by the air-bearing base rotating detection unit 741 one revolution.

[0096] Please see Figure 8 In some embodiments, the drive assembly for driving the detection unit 741 to rotate includes a gas drive unit 742, an air intake assembly 106, and a gas flow controller 116. Specifically: the gas drive unit 742 is coaxially connected to the detection unit 741 or connected via gear transmission, and is used to drive the detection unit 741 to rotate synchronously; the air intake assembly 106 is used to inject gas into the gas drive unit 742 to drive the gas drive unit 742 to rotate, and the rotation of the gas drive unit 742 simultaneously drives the support shaft 73, the detection unit 741, and the carrier 71 to rotate synchronously; the gas flow controller 116 is connected to the controller 115 and is used to control the flow rate of the gas injected by the air intake assembly 106.

[0097] Please see Figure 9In some embodiments, the air intake assembly 106 includes an annular jet section 1061 and a connecting section 1063. The annular jet section 1061 is hollow or has an airflow channel, and multiple jet holes 1062 are spaced circumferentially along the annular side of the annular jet section 1061 near the gas drive section 742, providing uniform rotational power to the gas drive section 742. One end of the connecting section 1063 is fixedly connected to and communicates with the annular jet section 1061, and the other end is used to connect to an external air source 117. In specific implementation, the detector 110 sends the measured rotational speed to the controller 115. The controller 115 then outputs a control quantity based on the deviation between the real-time rotational speed value PV1 and the set rotational speed value SP1, so as to adjust the airflow of the air intake assembly 106 through the gas flow controller (MFC) 116, thereby adjusting the rotational speed of the gas drive section 742 (which is also the rotational speed of the detection section 741, the support 71, and the air-floating base and wafer), ensuring precise control and consistency of the rotational speed during the process.

[0098] In some embodiments, the gas drive unit 742 includes an impeller (see also...) Figure 7 The annular jet nozzle 1061 has multiple jet holes 1062 evenly distributed, all of which are circular vent holes inclined in the circumferential direction, with the same inclination angle, which can be set to any value within the range of 30° to 70° (e.g., 45°). Moreover, the relative position of each jet hole 1062 corresponds one-to-one with the relative position of the air guide channel at the bottom of the impeller.

[0099] Please see Figure 8 In some embodiments, the reaction chamber containing the first heating element 5 and the second heating element 4 is composed of insulating felt (including upper insulating felt 1, lower insulating felt 2, exhaust gas insulating felt 3, and intake insulating felt 8), and this reaction chamber is located inside the quartz outer cavity. The two ends of the reaction chamber are the intake insulating felt 8 and the exhaust gas insulating felt 3, respectively; the two ends of the quartz outer cavity are the intake flange 11 and the exhaust flange (not labeled in the figure), respectively. The intake flange 11 is located outside the intake insulating felt 8, that is, on the intake side of the quartz outer cavity; the exhaust ends of both the reaction chamber and the quartz outer cavity are connected to the exhaust gas emission system and the vacuum system. The intake assembly 106 is connected to an external air source 117 via a first air guide pipe 112. This external air source 117 is located not only outside the reaction chamber but also outside the quartz outer cavity. Specifically, the connecting part 1063 of the intake assembly 106 and the first air guide pipe 112 can be connected by a threaded connection. In addition, the external gas source 117 also injects gas through the second gas guide tube 105 into at least a portion of the area of ​​the optical fiber 104 away from the detection unit 741. Specifically, as Figure 8As shown, the second air guide pipe 105 is located outside the reaction chamber, between the air inlet insulation felt 8 and the air inlet flange 11. One end of the second air guide pipe 105 is connected to the first air guide pipe 112 or passes through the air inlet flange 11 and connects to an external air source 117. The other end of the second air guide pipe 105 is close to the conductive optical fiber 104 and is used to spray gas onto the conductive optical fiber 104. At this time, the airflow output by the air inlet assembly 106 can not only drive the gas drive unit 742 to rotate, providing it with a power source, but also provide purge gas to the conductive optical fiber 104 near the detection unit 741. Thus, during the gas flow, it provides a cooling effect for the conductive optical fiber 104, and can also provide purge gas to the fiber optic lens of the conductive optical fiber 104 to prevent particle deposition at the lens. The part of the conductive optical fiber 104 away from the detection unit 741 is cooled by the airflow output by the second air guide pipe 105. In specific implementations, both the first air guide pipe 112 and the second air guide pipe 105 can be ceramic pipes.

[0100] When measuring the rotational speed of the support 71 for supporting the wafer in the air-floating base using the rotating base provided in this application in a semiconductor device, the annular jet 1061 of the air intake assembly 106 is located inside the first heating body 5 and below the gas drive unit 742, while the detection unit 741 is located above the gas drive unit 742; the first air guide pipe 112 and the second air guide pipe 105 are both located inside the air intake flange 11. The second air guide pipe 105 is located between the air intake insulation felt 8 and the air intake flange 11 and communicates with the first air guide pipe 112; one end of the first air guide pipe 112 passes through the end faces of the air intake insulation felt 8 and the first heating body 5 and enters the interior of the first heating body 5 to connect with the air intake assembly 106, while the other end passes through the air intake flange 11 via the cyclone connector 113 and connects to the third air guide pipe 114, and then connects to the gas flow controller (MFC) and the external air source 117. In practical implementation, the third air guide pipe 114 can be made of metal; the contact points between the cyclone connector 113 and the air inlet flange 11 are all welded, and its two ends are connected to the third air guide pipe 114 and the first air guide pipe 112 using VCR interfaces and gaskets, respectively. It should be noted that VCR refers to a connection method, for example, VCR includes a connecting pipe, an internal thread nut, a washer, a long connecting pipe, and an external thread nut, which together can provide good airtightness.

[0101] Furthermore, one end of the conductive optical fiber 104 passes through the end face of the air inlet flange 11, the air inlet insulation felt 8, and the first heating element 5, and then enters the internal cavity of the first heating element 5 (i.e., Figure 8 The first cavity 50 shown is used to collect the radiation energy at the detection position, and the other end is located outside the air inlet flange 11 to transmit the collected radiation energy to the detector 110 for measurement.

[0102] like Figure 8As shown, in some embodiments, to ensure that the support 71 and its hollow shaft 72 at its bottom are concentric with the circular annular jet 1061, a support member 109 is provided in the first heating body 5, and the conductive optical fiber 104 is supported and positioned by the support member 109. The support member 109 is fixedly connected to the first heating body 5 by graphite screws to prevent displacement. The connecting part 1063 of the air intake assembly 106 is specifically a ceramic conduit, which passes through the support member 109 and is threadedly connected to the first air guide pipe 112. The position of the annular jet 1061 can be finely adjusted by the screw-in position of the thread to ensure that the orthocenter of the gas drive unit 742 and the center of the annular jet 1061 are in the same vertical direction. The ceramic sleeve 103 covering the conductive optical fiber 104, as well as the air intake assembly 106 and the first air guide pipe 112, are all made of ceramic material, and their interface positions are all provided with connecting threads.

[0103] Please see Figure 10 In some embodiments, to ensure the airtightness of the reaction chamber, the conductive optical fiber 104 extending out of the inlet flange 11 is sealed at its connection with the inlet flange 11 by an optical fiber feeder sealing structure 111. This optical fiber feeder sealing structure 111 includes an optical fiber sealing flange 1111 with screw holes 1110. The optical fiber sealing flange 1111 is located outside the inlet flange 11. A screw passes through the screw holes 1110 and connects to the inlet flange 11 to tightly fit the optical fiber sealing flange 1111 to the inlet flange 11, and is sealed by a first O-ring 111a. The portion of the conductive optical fiber 104 extending out of the optical fiber sealing flange 1111 is connected to the optical fiber sealing flange 1111 by a pressure screw 1112, and is sealed by a second O-ring 111b and a third O-ring 111c. The end 1041 of the conductive optical fiber 104 has a threaded structure for connection to the detector 110.

[0104] In some embodiments, the gas drive unit 742 includes an impeller (see also...) Figure 7 The impeller includes an impeller body 7421, which includes a central shaft and multiple blades arranged at intervals along the circumference. There are airflow channels 7422 between adjacent blades. The central shaft has a second central hole 7423 for connecting to a support shaft 73. The second central hole 7423 is preferably a polygonal hole. The support shaft 73 can be rigidly connected to the impeller after passing through the second central hole 7423.

[0105] Since the airflow channels 7422 are evenly distributed at the bottom of the gas drive unit 742, when the air intake assembly 106 injects gas upwards into the gas drive unit 742, the gas drive unit 742, driven by the gas, can cause the rotating assembly consisting of the support shaft 73, the detection unit 741, and the carrier 71 to float upwards by a preset distance h, where h is approximately 2mm to 3mm. Simultaneously, the gas flows into the airflow channels 7422, and as the airflow flows along the channels 7422, it drives the gas drive unit 742 to rotate, thereby causing the support shaft 73, the detection unit 741, and the carrier 71 to rotate. Therefore, the air intake assembly 106 provides rotational power and upward buoyancy to the air-floating base, ensuring that the carrier 71 maintains a greater than zero gap distance with the top surface of the first heating element 5 during rotation, thus significantly reducing the frictional resistance between them.

[0106] Please see Figure 11 Considering that the radiation energy emitted by the detection area of ​​the detection unit 741 is strongest when perpendicular to its surface, and the energy radiated outward in other directions gradually decreases with increasing angle, when the angle between the conducting optical fiber 104 and the tangential plane of the detection area surface is greater than 45°, the radiation energy that the conducting optical fiber 104 can collect decreases rapidly. For example... Figure 11 As shown, when the horizontal distance between the acquisition end of the transmission fiber 104 and the detection area of ​​the detection unit 741 is d, the effective detection viewing angle area φ of the transmission fiber 104 can be calculated to be approximately φ = πd. 2 .

[0107] Assuming the air intake assembly 106 injects gas upwards towards the gas drive unit 742, the detection unit 741 rises to the position indicated by the dashed line, with a rising height h of approximately 2mm to 3mm. To ensure that the detection area of ​​the detection unit 741 remains within the effective detection viewing angle φ of the transmission optical fiber 104 after rising, the gap distance d between the detection area of ​​the detection unit 741 and the transmission optical fiber 104 cannot exceed 1 / 2 of the axial thickness m of the detection area, i.e., m > 2d. Specifically, in the radial direction of the detection unit 741, the gap distance between the transmission optical fiber 104 and the detection unit 741 is d; in the axial direction of the detection unit 741, the height difference between the bottom of the transmission optical fiber 104 and the bottom of the detection unit 741 is x, where x ≥ h; and the axial thickness of the detection unit 741 is m, where m ≥ 2d + h.

[0108] Please see Figure 8The semiconductor device provided in this application embodiment includes a reaction chamber, a first heating element 5, a second heating element 4 and a rotating base described above, located within the reaction chamber. The reaction chamber includes a process cavity 100 enclosed by an upper insulating felt 1, a lower insulating felt 2, an exhaust gas insulating felt 3, and an intake gas insulating felt 8. A support seat 71 in the rotating base is used to support the wafer and is located on the upper surface of the first heating plate (i.e., the top plate of the first heating body 5) of the first heating body 5. A support shaft 73 located at the bottom of the support seat 71 is sleeved in a hollow shaft 72 and rotatably connected to the mounting hole of the first heating plate through the hollow shaft 72. The support seat 71, the detection unit 741, and the gas driving unit 742 are coaxially connected from top to bottom via the support shaft 73 to form an air-floating base 7. The support shaft 73 passes through the upper and lower surfaces of the first heating plate. The detection unit 741 and the gas driving unit 742 in the rotating base are both located below the first heating plate and coaxially connected to the support shaft 73, meaning that the detection unit 741 and the gas driving unit 742 are both located in the internal cavity of the first heating body 5 (i.e., the upper surface of the first heating body 5). Figure 8 The gas inlet assembly 106 is located in the first cavity 50 shown in the diagram, and rotates synchronously with the support base 71 via the support shaft 73; moreover, the jet end of the gas inlet assembly 106 is located in the internal cavity of the first heating element 5. It can be seen that in this semiconductor device, the detection unit 741 and the support base 71, and the gas drive unit 742 and the process chamber 100 of the reaction chamber are separated by the first heating element 5, which effectively prevents the airflow output by the gas inlet assembly 106 from interfering with the process results.

[0109] Please see Figure 4 In specific implementation, the support base 71 is used to support the wafer, and its bottom is fixedly connected to the support shaft 73. The support shaft 73 is coaxially connected to the detection unit 741 and the gas drive unit 742. The upper and lower sides of the detection unit 741 are respectively provided with fixing nuts 76, and the lower side of the gas drive unit 742 is provided with a locking nut 75. Among them, the support base 71, support shaft 73, fixing nuts 76, and locking nuts 75 can all be made of graphite material; the detection unit 741 is a composite material, which includes the above-mentioned materials that can emit different radiation energy values, such as alumina and silicon carbide; the gas drive unit 742 is an impeller made of ceramic material; the fixing nut 76 is threadedly connected to the support shaft 73, and the fixing nut 76 can prevent the detection unit 741 from moving up and down relative to the support shaft 73; the locking nut 75 is threadedly connected to the support shaft 73, and the locking nut 75 and the fixing nut 76 can prevent the gas drive unit 742 from moving up and down relative to the support shaft 73.

[0110] In the aforementioned semiconductor device, the air intake assembly 106 drives the gas drive unit 742 to rotate, thereby causing the detection unit 741 and the support base 71 to rotate synchronously. The jet end of the air intake assembly 106 is located in the internal cavity of the first heating body 5. Moreover, the detection unit 741, which is coaxially connected to the support base 71, the gas drive unit 742 for driving the detection unit 741 and the support base 71 to rotate, and the air intake assembly 106 are all located in the internal cavity of the first heating body 5. This effectively prevents the airflow ejected by the air intake assembly 106 and the particles it blows up from causing process defects to the wafers in the process cavity 100, and also prevents the airflow ejected by the air intake assembly 106 from affecting the airflow field in the process cavity 100 when driving the air float base to rotate.

[0111] like Figure 8 As shown, in the above-mentioned semiconductor device, the inlet flange 11 is located outside the reaction chamber; the detector 110 is located outside the reaction chamber and collects and conducts the radiation energy of the detection area through the transmission optical fiber 104; the head end of the transmission optical fiber 104, which is the collection end close to the detection area of ​​the detection unit 741, is located inside the reaction chamber and inside the first heating element 5; the end of the transmission optical fiber 104 passes through the inlet flange 11 and is connected to the detector 110, and both the optical fiber 104 and the detector 110 are located outside the reaction chamber.

[0112] like Figure 8 and Figure 14 As shown, the speed control system in this semiconductor device mainly consists of a gas flow controller 116, a gas drive unit 742, a support base 71, a conductive optical fiber 104, a detector 110, and a controller 115. Specifically, the controller 116 is a PID controller (Proportional-Integral-Derivative). The detector 110 sends the base speed measurement results to the controller 115, which outputs a control quantity based on the deviation between the real-time speed value PV1 and the set speed value SP1. This control quantity adjusts the gas flow rate of the air intake assembly 106 by regulating the gas flow controller 116, thereby adjusting the speed of the air-bearing base. In this design, the actual speed of the air-bearing base is calculated by measuring the time required for the detection unit 741 to rotate one revolution, resulting in high real-time performance.

[0113] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed.

[0114] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0115] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A rotating base, characterized in that, include: Support (71); A support shaft (73) is located below the bearing seat (71) and coaxially connected to it; The detection unit (741) is fixedly disposed with the support shaft (73). The detection unit (741) includes at least two detection zones arranged sequentially around the axis of the support shaft (73). The radiation energy values ​​of adjacent detection zones are different at the same temperature. The detector (110) is located at a preset detection position outside the detection unit (741) and is used to detect the radiation energy value of each detection area; A controller (115), connected to the detector (110), is used to calculate the rotational speed of the support shaft (73) based on the cycle period of different radiation energy values ​​detected by the detector (110); The drive assembly is used to drive the support shaft (73) to drive the bearing seat (71) and the detection unit (741) to rotate synchronously, and to adjust the rotation speed of the support shaft (73) according to the rotation speed information fed back by the controller.

2. The rotating base according to claim 1, characterized in that, The detection part is sleeved outside the support shaft (73), or the detection part is located on the side of the support shaft (73) and integrally formed therewith; a plurality of detection areas are arranged sequentially around the central axis of the support shaft (73), and each detection area is a cylindrical blade with a fan-shaped cross section; The minimum angle θ of the sector is θ=[(S max / 60) / 1000 / 360*Ts], S max The maximum rotational speed of the detection unit (741) is expressed in rpm. Ts is the sampling time of the detector (110), in ms.

3. The rotating base according to claim 2, characterized in that, The angle of the sector is not less than 20°.

4. The rotating base according to claim 1, characterized in that, The materials of the two adjacent detection zones include alumina and silicon carbide, respectively.

5. A semiconductor device, characterized in that, include: The reaction chamber, the first heating element (5), and the rotating base as described in any one of claims 1 to 4; The first heating element (5) includes a first heating plate located within the reaction chamber; In the rotating base: the bearing seat (71) is rotatably disposed on the top surface of the first heating plate, the support shaft (73) passes through the upper and lower surfaces of the first heating plate, the detection part (741) is located inside the reaction chamber and below the first heating plate, and the detector (110) is located outside the reaction chamber.

6. The semiconductor device according to claim 5, characterized in that, The detector (110) includes an objective lens (1101), an optical lens (1102), a flat lens (1103), a filter grating (1104), a beam splitter (1105), and an infrared photoelectric element (1106) arranged along the transmission path to convert the collected radiation energy value of the detection area into an electrical signal and send it to the controller (115).

7. The semiconductor device according to claim 5, characterized in that, It also includes a transmission optical fiber (104), wherein: The head end of the conductive optical fiber (104) is close to the detection part (741) and located at any point radially outside the support shaft (73), for collecting and transmitting the radiation energy of the detection area; The end of the conductive optical fiber (104) is close to or connected to the receiving end of the detector (110) for transmitting the collected radiation energy to the detector (110).

8. The semiconductor device according to claim 7, characterized in that, It also includes a filter located between the end of the conductive fiber (104) and the receiving end of the detector (110).

9. The semiconductor device according to claim 7, characterized in that, The driving component includes: The gas drive unit (742) is fixedly connected to the support shaft (73); An air intake assembly (106) is used to inject gas into the gas drive unit (742) to drive the gas drive unit (742) to rotate synchronously with the support shaft (73), the detection unit (741) and the carrier (71); A gas flow controller (116), connected to the controller (115), is used to control the flow rate of the gas.

10. The semiconductor device according to claim 9, characterized in that, The intake assembly (106) includes: An annular jet section (1061) has a plurality of jet holes (1062) spaced circumferentially on its annular side near the gas drive section (742); The connecting part (1063) is fixedly connected to and communicates with the annular jet part (1061) and is used to connect to an external air source (117).

11. The semiconductor device according to claim 9, characterized in that, Also includes: The first air duct (112) has one end located outside the reaction chamber for connecting to an external air source (117), and the other end located inside the reaction chamber and connected to the air intake assembly (106). The second gas guide tube (105) is located outside the reaction chamber. One end is connected to the first gas guide tube (112) or an external gas source (117), and the other end is close to the optical fiber (104). It is used to spray gas into at least a part of the optical fiber (104) away from the detection unit (741).

12. The semiconductor device according to claim 9, characterized in that, The gas drive unit (742) is also used for: When the air intake assembly (106) injects gas into the gas drive unit (742), the support shaft (73), the detection unit (741), and the carrier (71) can be driven by the gas to float upward by a preset distance h.

13. The semiconductor device according to claim 12, characterized in that, In the radial direction of the support shaft (73), the gap distance between the conductive optical fiber (104) and the detection part (741) is d; In the axial direction of the support shaft (73), the height difference between the bottom of the conductive optical fiber (104) and the bottom of the detection part (741) is x, where x ≥ h; The axial thickness of the detection unit (741) is m, where m ≥ 2d + h.

14. The semiconductor device according to claim 5, characterized in that, The controller (115) is used to generate a pulse waveform diagram based on each of the different radiation energy values ​​and its duration, and to calculate the rotational speed of the detection unit (741) based on the pulse waveform diagram.

15. The semiconductor device according to claim 9, characterized in that, The first heating element (5) further includes a first cavity (50) located below the first heating plate; The detection unit (741) is located in the first cavity (50); The jet end of the air intake assembly (106) is located in the first cavity (50).

16. The semiconductor device according to claim 11, characterized in that, It also includes a quartz outer cavity and an air inlet flange (11) disposed on the air inlet side of the quartz outer cavity; The head end of the conductive optical fiber (104) is located inside the reaction chamber, and the end end of the conductive optical fiber (104) is located outside the reaction chamber and passes through the air inlet flange (11) before connecting to the detector (110). One end of the first air guide pipe (112) is located inside the reaction chamber and connected to the air intake assembly (106), and the other end is located outside the reaction chamber and passes through the air intake flange (11) and is connected to the external air source (117).

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