Display device
Patent Information
- Application Number
- CN202511636405.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2025-02-27
- Filing Date
- 2025-11-10
- Publication Date
- 2026-08-28
AI Technical Summary
[0020] The black matrix may include: a first black matrix, which is disposed on the encapsulation layer corresponding to the non-emitting area; and a second black matrix, which is disposed on the first black matrix corresponding to the non-emitting area.
Smart Images

Figure CN122652860A_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to a display device, and more specifically, for example, but not limited to, a display device capable of achieving uniform reflective visibility throughout the entire area and minimizing the reflection of external light. Background Technology
[0002] Various display devices have been used to display images in TVs, monitors, smartphones, tablet PCs, and laptop computers. These display devices include a display panel with multiple light-emitting elements or liquid crystals for realizing images and transistors for controlling each light-emitting element or liquid crystal, so that the display device displays the desired image through the multiple light-emitting elements or liquid crystals.
[0003] Technology for light-emitting display devices, including those using light-emitting diodes (LEDs), has developed rapidly. Light-emitting display devices can be classified into organic light-emitting display devices that use organic light-emitting materials and inorganic light-emitting display devices that use inorganic light-emitting materials.
[0004] Display devices traditionally include polarizers on the display surface to minimize or reduce external light reflection. Recently, various research and development efforts have been undertaken to improve the reliability and image quality of display devices. Summary of the Invention
[0005] Therefore, one or more embodiments of the inventive concept relate to a display device that substantially eliminates one or more problems caused by the limitations and disadvantages of the prior art.
[0006] One aspect of the inventive concept is to provide a display device that can minimize or reduce the reflection of external light while maintaining or increasing brightness, and prevent a decrease in brightness.
[0007] Another aspect of the inventive concept is to provide a display device that can minimize or reduce stains and uneven iridescent colors caused by external light, light reflection from conductive materials such as conductive films and / or electrodes in a display panel, and / or the difference in refractive index between films through which light passes.
[0008] Another aspect of the inventive concept is to provide a display device that can control the external light path on the display surface so that external light can be uniformly incident on the entire area and minimize or reduce the deviation of the external light's regional reflection.
[0009] Another aspect of the inventive concept is to provide a display device with improved black visibility in both the display area and the non-display area by overcoming the difference in length of the different external optical paths in the display area and the non-display area.
[0010] Another aspect of the inventive concept is to provide a display device that can improve flexibility and is suitable for foldable products.
[0011] Another aspect of the inventive concept is to provide a display device capable of removing polarizing components.
[0012] Another aspect of the inventive concept is to provide a display device capable of minimizing or reducing the visibility of regional reflective areas.
[0013] Another aspect of the inventive concept is to provide a display device that achieves low reflection and low power consumption, thereby achieving environmental friendliness and pursuing ESG (Environmental, Social and Governance).
[0014] Additional features and aspects will be set forth in the following description and will be apparent in part from the description or may be learned by practice of the disclosed concepts provided herein. Other features and aspects of the disclosed concepts may be realized and obtained by means of those specifically pointed out in the written description or by means of structures deduced from the written description and claims and drawings.
[0015] A display device according to one embodiment includes: a substrate having a non-display area and a display area, the display area including a light-emitting area and a non-light-emitting area; a light-emitting diode (LED) disposed on the substrate corresponding to the light-emitting area; a dam layer disposed adjacent to the LED corresponding to the non-light-emitting area; an encapsulation layer disposed on the LED and the dam layer; a color filter pattern disposed on the encapsulation layer corresponding to the light-emitting area; a black matrix disposed on the encapsulation layer corresponding to the non-light-emitting area; and an auxiliary black matrix disposed on the substrate in the non-display area and disposed on the color filter pattern and the black matrix in the display area, wherein the auxiliary black matrix disposed in the non-display area has a first thickness that is thicker than the second thickness of the auxiliary black matrix disposed in the display area.
[0016] The thickness of the auxiliary black matrix positioned corresponding to the luminous area on the color filter pattern can be substantially the same as or different from the thickness of the auxiliary black matrix positioned corresponding to the non-luminous area on the black matrix.
[0017] The non-luminescent region may include a first non-luminescent region in which the embankment and the black matrix are configured to overlap; and a second non-luminescent region in which the embankment is configured to extend further toward the luminescent region than the black matrix.
[0018] The thickness of the auxiliary black matrix positioned corresponding to the first non-emitting region and / or the thickness of the auxiliary black matrix positioned corresponding to the emitting region on the color filter pattern may be different from the thickness of the auxiliary black matrix positioned corresponding to the second non-emitting region.
[0019] In another embodiment, the second thickness can gradually decrease from the auxiliary black matrix disposed in the non-light-emitting region to the auxiliary black matrix disposed in the light-emitting region.
[0020] The black matrix may include: a first black matrix, which is disposed on the encapsulation layer corresponding to the non-emitting area; and a second black matrix, which is disposed on the first black matrix corresponding to the non-emitting area.
[0021] In one or more embodiments, the brightness of the light emitted from the LED is not reduced because a separate polarizer is not required for the display surface. A portion of the external light can be absorbed or reflected by an auxiliary black matrix disposed adjacent to the display surface, so that the external light can be incident on the internal display panel or pad components throughout the region via the same or similar optical path.
[0022] The display device disclosed herein controls the external light path by region and compensates for length differences in the external light path by region. In this display device, deviations in regional reflection of external light can be minimized or reduced. Therefore, a display device can achieve differences in the visibility of black reflections in the display area and non-display area.
[0023] When external light incident on the display area and non-display area is reflected from the electrodes inside the display panel, the external light can be absorbed and blocked in the dam layer, black matrix, and auxiliary black matrix. Therefore, it is possible to minimize or reduce the reflection of external light in the display device.
[0024] In display devices, it is possible to minimize or reduce light reflection caused by conductive materials such as conductive films and / or electrodes inside the display panel, as well as the unevenness of rainbow colors caused by differences in the reflectivity of films through which reflected light passes.
[0025] The display device can remove polarizing components to improve its flexibility, thus enabling a foldable display device in which the display area can be folded.
[0026] Even without increasing the amount of light-blocking material in the dike layer and black matrix set in the non-light-emitting area, the reflection of external light can be effectively suppressed. Therefore, the reliability and processability of the black matrix can be ensured.
[0027] Compared to the side of the black matrix adjacent to the color filter layer, the side of the dam layer adjacent to the light-emitting diodes extends further into the light-emitting area, ensuring a favorable viewing angle for the display device. Furthermore, since multiple black matrices can be arranged adjacent to the color filter pattern, the viewing angle can be further improved. A low-reflection display device can be realized, and ESG can be achieved by setting a non-uniform pattern on the lower surface (and if necessary, the upper surface) of the black matrix, thus providing the advantage of low power consumption.
[0028] Other systems, methods, features, and advantages will be apparent to those skilled in the art upon examination of the following figures and detailed description. All such additional systems, methods, features, and advantages are intended to be included within this specification, within the scope of this disclosure, and protected by the appended claims. Nothing in this section should be construed as limiting those claims. Further aspects and advantages are discussed below in conjunction with embodiments of this disclosure.
[0029] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory, and are intended to provide further explanation of the claimed inventive concept. Attached Figure Description
[0030] The accompanying drawings, which provide a further understanding of this disclosure, are incorporated in and constitute a part of this application, illustrating embodiments of the disclosure, and together with the description serve to explain the principles of the disclosure.
[0031] Figure 1 A schematic functional diagram illustrating a display device according to one or more embodiments of the inventive concept is shown.
[0032] Figure 2 A schematic circuit diagram of a display device according to one or more embodiments of the inventive concept is shown.
[0033] Figure 3 Examples are shown along Figure 1 The diagram shows a cross-sectional view taken by line III-III, and also illustrates a schematic cross-sectional view of a display device according to a first embodiment of the inventive concept.
[0034] Figure 4 This is a schematic diagram illustrating components of a dam layer, a black matrix, and an auxiliary black matrix that are related to optical density by region in a display device according to a first embodiment of the inventive concept.
[0035] Figure 5 , Figure 6 , Figure 7 , Figure 8 and Figure 9This is a schematic diagram illustrating the components of the embankment, black matrix, and auxiliary black matrix in a display device according to various other embodiments of the inventive concept.
[0036] Figure 10 Examples are shown along Figure 1 The diagram shows a cross-sectional view taken by line III-III, and also illustrates a schematic cross-sectional view of a display device according to a second embodiment of the inventive concept.
[0037] Figure 11 This is a schematic diagram illustrating components of a dam layer, a black matrix, and an auxiliary black matrix related to optical density by region in a display device according to a second embodiment of the inventive concept.
[0038] Figure 12 , Figure 13 , Figure 14 , Figure 15 and Figure 16 This is a schematic diagram illustrating the components of the embankment, black matrix, and auxiliary black matrix in a display device according to various other embodiments of the inventive concept.
[0039] Figure 17 A schematic exploded perspective view of a display device according to a third embodiment of the inventive concept is shown.
[0040] Figure 18 A schematic cross-sectional view of a display device according to a third embodiment of the inventive concept is shown.
[0041] Throughout the accompanying drawings and detailed description, unless otherwise stated, the same reference numerals shall be construed as referring to the same elements, features, and structures. For clarity, illustration, and convenience, the relative sizes and depictions of these elements may be exaggerated. Detailed Implementation
[0042] Reference will now be made in detail to embodiments of this disclosure, examples of which are illustrated in the accompanying drawings. In the following description, detailed descriptions of well-known functions or configurations relevant to this document will be omitted or may be briefly discussed where it is determined that such detailed descriptions would unnecessarily obscure the essential points of the inventive concept. The described process steps and / or order of operations are exemplary; however, the order of steps and / or operations is not limited to the order set forth herein and may be varied as is known in the art, except for steps and / or operations that must occur in a specific order. The same reference numerals always refer to the same elements. The names of the corresponding elements used in the following explanation may be chosen solely for the convenience of writing the specification and may therefore differ from those used in actual products.
[0043] The advantages and features of this disclosure, as well as the methods for achieving these advantages and features, will become clear from the embodiments described in detail below with reference to the accompanying drawings. However, this disclosure may be implemented in many different forms and should not be construed as limited to the embodiments set forth herein. The embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of this disclosure to those skilled in the art to which this disclosure pertains.
[0044] The shapes, sizes, proportions, angles, quantities, etc., disclosed in the accompanying drawings used to describe embodiments of this disclosure are merely illustrative examples, and therefore this disclosure is not limited to the illustrative examples. Unless otherwise stated, the same reference numerals refer to the same components throughout this disclosure. Furthermore, in the following description of this disclosure, detailed descriptions of known related technologies may be omitted or briefly discussed where such descriptions might unnecessarily obscure the essential points of this disclosure.
[0045] Where terms such as “comprising,” “having,” or “including” are used in this disclosure, other components may be added unless more restrictive terms such as “only” are used herein. Furthermore, unless otherwise stated, when a component is expressed in the singular, the plural is included, and vice versa.
[0046] Any implementation described in this article as an "example" is not necessarily to be interpreted as preferred or advantageous over other implementations.
[0047] When analyzing components, the error range should be interpreted as included, even if not explicitly described.
[0048] When describing positional relationships, for example, when the positional relationship between two components / layers is described as "above", "on top", "below", "below", "adjacent", etc., one or more other components / layers may be provided between the two components / layers unless used with more restrictive terms such as "immediately adjacent" or "directly".
[0049] When a component or layer is referred to as being "on" another component or layer, it includes situations where the other component is directly on the other component or layer or where there is another layer or component between them.
[0050] When describing temporal relationships, such as when describing preceding time relationships as "after," "following," "next," "before," etc., discontinuous or sequential situations may also be included unless more restrictive terms such as "immediately" or "directly" are used. Furthermore, the term "may" fully encompasses all the meanings and scope of the term "may," and vice versa.
[0051] Although the terms first, second, etc., can be used to describe various components, these components are not substantially limited by these terms. These terms are used only to refer to a component separate from another component and do not limit any particular order or sequence. Therefore, within the technical spirit of this disclosure, the first component described below can be substantially the second component, and vice versa.
[0052] The expressions "first element," "second element," and " / or" "third element" should be understood as one of the first element, the second element, and the third element, or any or all combinations of the first element, the second element, and the third element. For example, A, B, and / or C can refer to only A; only B; only C; any or some combinations of A, B, and C; or all of A, B, and C.
[0053] The term “at least one” should be understood to include any and all combinations of one or more associated listed items. For example, “at least one of the first element, the second element, and the third element” means a combination of all three listed elements, a combination of any two of the three elements, and each individual element (the first element, the second element, or the third element).
[0054] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the example embodiments pertain. It should also be understood that terms such as those defined in common dictionaries should be interpreted as having a meaning consistent with, for example, their meaning in the context of the relevant field, and should not be interpreted in an idealized or overly formal sense unless explicitly defined herein. For example, as one of ordinary skill in the art will understand, the terms “component” or “unit” can be applied to, for example, a single circuit or structure, an integrated circuit, a computational block of a circuit device, or any structure configured to perform the described functions.
[0055] In contrast, these embodiments may be provided to make this disclosure sufficiently thorough and complete to assist those skilled in the art in fully understanding its scope. Furthermore, this disclosure is limited only by the scope of the claims.
[0056] Features of various embodiments of the inventive concept can be partially or completely combined or integrated with each other, various interlocks and drives are technically possible, and each of the embodiments can be implemented independently of each other or together in an interdependent relationship.
[0057] All components of each display device according to all embodiments of the inventive concept are operatively connected and configured.
[0058] Reference will now be made in detail to various aspects of this disclosure, examples of which are illustrated in the accompanying drawings. Where possible, the same reference numerals will be used throughout the drawings to refer to the same or similar parts.
[0059] Figure 1 A schematic functional diagram illustrating a display device according to one or more embodiments of the inventive concept is shown. Figure 2 Schematic circuit diagrams illustrating a display device in one or more embodiments of the inventive concept are shown.
[0060] Reference Figure 1 and Figure 2 A display device 100 according to one or more embodiments of the present disclosure includes a timing controller 102, a data driver 104, a gating driver 106, and a substrate 110 on which a display panel is disposed. Multiple data lines DL1, DL2, DL3, ... DLm (m is an integer) and multiple gating lines GL1, GL2, GL3, ... GLn (n is an integer) can be arranged on the substrate 110.
[0061] The timing controller 102 is configured to generate a gating control signal GCS, a data control signal DCS, and image data RGB using multiple timing signals such as image signal IS, data enable signal DE, horizontal sync signal HSV, and clock CLK provided from an external system such as a graphics card and / or a TV system. The timing controller 102 can provide the generated data control signal DCS and image data RGB to the data driver 104, and provide the generated gating control signal GCS to the gating driver 106.
[0062] The data driver 104 can use the data control signal DCS provided from the timing controller 102 and the image data RGB to generate a data signal (data voltage) and provide the generated data signal to the data line DL located on the substrate 108.
[0063] The gating driver 106 can generate a gating signal (gating voltage) using the gating control signal GCS provided from the timing controller 102, and provide the generated gating signal to the gating line GL located on the substrate 110. Depending on the driving type, the gating driver 106 can be positioned on one side of the substrate 110, or two separate gating drivers can be positioned on opposite sides of the substrate 110.
[0064] The substrate 110 may include a display area DA that displays an image and includes a plurality of sub-pixel areas SP and a non-display area NDA surrounding the display area DA. A display panel may be disposed on the display area DA of the substrate 110.
[0065] The non-display area NDA can be located outside the display area DA (e.g., near the edge of substrate 110 or on the edge of substrate 110). A pad component PAD can be disposed within the non-display area NDA. The pad component PAD can be connected to an electrode disposed in the display panel via an output line and can be connected to the data driver 104 and / or the strobe driver 106 via an input line.
[0066] Images can be displayed in the display area DA of the substrate 110 using gating signals and data signals. Specifically, the substrate 110 may include multiple sub-pixel areas SP, multiple gating lines GL, multiple data lines DL, and multiple power lines PL for displaying images.
[0067] Reference Figure 2 The gate line GL, data line DL, and power line PL can intersect each other to define a sub-pixel region SP in the display device 100. A switching thin-film transistor Ts, a driving thin-film transistor Td, a storage capacitor Cst, and a light-emitting diode D can be disposed in the sub-pixel region SP. The sub-pixel region SP can include a first sub-pixel region SP1, a second sub-pixel region SP2, a third sub-pixel region SP3, and optionally a fourth sub-pixel region. As an example, the first sub-pixel region SP can be a red (R) sub-pixel region, the second sub-pixel region SP2 can be a green (G) sub-pixel region, the third sub-pixel region SP3 can be a blue (B) sub-pixel region, and the fourth sub-pixel region can be a white (W) sub-pixel region, but is not limited thereto.
[0068] The switching thin-film transistor Ts can be connected to the gate line GL and the data line DL. The driving thin-film transistor Td and the storage capacitor Cst can be connected between the switching thin-film transistor Ts and the power line PL, and the light-emitting diode D can be connected to the driving thin-film transistor Td.
[0069] In a display device, when the switching thin-film transistor Ts is turned on by a gating signal applied to the gating line GL, the data signal applied to the data line DL can be applied to the gate electrode 116 or 316 through the switching thin-film transistor Ts. Figure 3 or Figure 10 And applied to one electrode of the storage capacitor Cst.
[0070] The driving thin-film transistor Td can be turned on by a data signal applied to its gate electrode 116 or 316, so that a current proportional to the data signal flows from the power line PL through the driving thin-film transistor Td to the light-emitting diode D. The light-emitting diode D then emits light with a brightness proportional to the current flowing through the driving thin-film transistor Td. In this case, the storage capacitor Cst is charged with a voltage proportional to the data signal, so that the voltage at the gate electrode 116 or 316 in the driving thin-film transistor Td remains constant during a frame. Therefore, the display device can display the desired image.
[0071] In one embodiment, each of the switching thin-film transistor Ts and / or the driving thin-film transistor Td may include, but is not limited to, polycrystalline semiconductor materials such as low-temperature polycrystalline silicon (LTPS) and / or oxide semiconductors. For example, the switching thin-film transistor Ts and / or the driving thin-film transistor Td may be, but are not limited to, a low-temperature polycrystalline oxide (LPTO) type transistor comprising LPTS and oxide semiconductors. In another embodiment, the driving thin-film transistor Td may be, but is not limited to, a complementary metal-oxide-semiconductor (CMOS) type transistor combining p-channel metal-oxide-semiconductor (PMOS) and n-channel metal-oxide-semiconductor (NMOS).
[0072] [First Implementation Method]
[0073] Figure 3 Examples Figure 1 The diagram shows a cross-sectional view taken along line III-III, and also illustrates a schematic cross-sectional view of a display device according to a first embodiment of the inventive concept.
[0074] Reference Figure 3 The display device 100 includes a substrate 110, a thin-film transistor Tr, and a light-emitting diode D disposed in each sub-pixel region SP. The display device 100 may include a dam layer 140 disposed adjacent to the light-emitting diode D, a black matrix 170 disposed on the dam layer 140, a color filter pattern 180 disposed on the light-emitting diode D, and an auxiliary black matrix 190 disposed on the black matrix 170 and the color filter pattern 180.
[0075] The substrate 110 includes a display area DA for displaying an image and a non-display area NDA surrounding the display area DA. The display area DA may include a light-emitting area EA that transmits light emitted from the light-emitting diode D and a non-light-emitting area NEA surrounding the light-emitting area EA.
[0076] The substrate 110 may include, but is not limited to, a glass substrate, a flexible substrate or a polymer plastic substrate. For example, the substrate 110 may be configured to include at least one of a polyimide (PI) substrate, a polyethersulfone (PES) substrate, a polyethylene naphthalate (PEN) substrate, a polyethylene terephthalate (PET) substrate, and a polycarbonate (PC) substrate.
[0077] The thin film transistor Tr is disposed on the substrate 110. In Figure 3 , the thin film transistor Tr is illustrated as being directly disposed on the substrate 110, however, the inventive concept is not limited thereto. In some embodiments, a buffer layer may be disposed on the substrate 110, and the thin film transistor Tr may be disposed on the buffer layer. For example, the buffer layer may include, but is not limited to, silicon oxide (SiO x ) and / or silicon nitride (SiN x ) (where 0 < x ≤ 2).
[0078] The thin film transistor Tr may include a semiconductor layer 112, a gate electrode 116, a source electrode 120 and a drain electrode 122. The thin film transistor Tr may be a driving thin film transistor Td ( Figure 2 ).
[0079] The semiconductor layer 112 is disposed on the substrate 110. In one embodiment, the semiconductor layer 112 may include an oxide semiconductor material. For example, the oxide semiconductor may be selected from, but not limited to, indium gallium zinc oxide (IGZO), indium zinc tin oxide (IZTO), zinc gallium tin oxide (ZGTO), zinc tin oxide (ZTO), zinc gallium oxide (ZGO), zinc oxide (ZnO), and combinations thereof.
[0080] When the semiconductor layer 112 includes an oxide semiconductor material, a light shielding pattern may be disposed below the semiconductor layer 112. The light shielding pattern can prevent or reduce light from being incident on the semiconductor layer 112, thereby preventing the semiconductor layer 112 from being deteriorated by light. In another embodiment, the semiconductor layer 112 may include polycrystalline semiconductor. In this case, impurities may be doped into both sides of the semiconductor layer 112.
[0081] A gate insulating layer 114 may be disposed on the semiconductor layer 112 and cover the entire substrate 110. For example, the gate insulating layer 114 may include, but is not limited to, inorganic insulating materials such as silicon oxide (SiO x ) and / or silicon nitride (SiN x ) (where 0 < x ≤ 2).
[0082] A gate electrode 116 made of a conductive material such as metal may be disposed on the gate insulating layer 114, which corresponds to the center of the semiconductor layer 112. For example, the gate electrode 116 may include, but is not limited to, metal components such as copper (Cu), molybdenum (Mo), titanium (Ti), aluminum (Al), gold (Au) and silver (Ag). The gate electrode 116 may have a single-layer structure or a multi-layer structure. In Figure 3 herein, the gate insulating layer 114 is exemplarily illustrated as being disposed on the entire substrate 110, but the gate insulating layer 114 may be patterned to have a shape formed corresponding to the shape of the gate electrode 116.
[0083] An interlayer insulating layer 118 is disposed on the gate electrode 116 and covers the entire substrate 110. For example, the interlayer insulating layer 118 may include, but is not limited to, inorganic insulating materials such as silicon oxide (SiOx) and silicon nitride (SiNx) (where 0 < x ≤ 2), or organic insulating materials such as benzocyclobutene and / or photoacrylic acid.
[0084] The interlayer insulating layer 118 is provided with a first semiconductor contact hole 119a and a second semiconductor contact hole 119b that expose or do not cover two sides of the semiconductor layer 112. The first semiconductor contact hole 119a and the second semiconductor contact hole 119b are arranged spaced apart from the gate electrode 116 on both sides of the gate electrode 116. In Figure 3 herein, the first semiconductor contact hole 119a and the second semiconductor contact hole 119b are configured to be disposed in the interlayer insulating layer 118 and the gate insulating layer 114. In another embodiment, when the gate insulating layer 114 is patterned to match the gate electrode 116, the first semiconductor contact hole 119a and the second semiconductor contact hole 119b may be formed only in the interlayer insulating layer 118.
[0085] A source electrode 120 and a drain electrode 122 made of a conductive material including metal components are disposed on the interlayer insulating layer 118. The source electrode 120 and the drain electrode 122 are spaced apart from each other with the gate electrode 116 located between them, and are in electrical contact with two sides of the semiconductor layer 112 through the first semiconductor contact hole 119a and the second semiconductor contact hole 119b. In one embodiment, the source electrode 120 may be an input electrode connected to high-potential driving power, and the drain electrode 122 may be an output electrode connected to a switch circuit, although the source electrode 120 and the drain electrode 122 are not limited thereto. The amount of current flowing to the light emitting diode D can be controlled by the voltage difference between the gate electrode 116 and the source electrode 120.
[0086] For example, the source electrode 120 and the drain electrode 122 may include, but are not limited to, metal components such as copper (Cu), molybdenum (Mo), titanium (Ti), aluminum (Al), gold (Au) and / or silver (Ag). The source electrode 120 and the drain electrode 122 may have a single-layer structure or a multi-layer structure.
[0087] In Figure 3 , the thin film transistor Tr has a coplanar structure in which a gate electrode 116, a source electrode 120 and a drain electrode 122 are disposed on a semiconductor layer 112. In another embodiment, the thin film transistor may have an inverted staggered structure in which the gate electrode is disposed below the semiconductor layer and the source electrode and the drain electrode are disposed on the semiconductor layer. In this case, the semiconductor layer may comprise amorphous silicon.
[0088] The thin film transistor Tr may be a driving thin film transistor Td ( Figure 2 ). For example, the driving thin film transistor Td may include an oxide semiconductor, but is not limited thereto.
[0089] A pad member PAD ( Figure 1 ) is disposed in the non-display area NDA. In one embodiment, the pad member PAD may be connected to the drain electrode 122, and may be formed of the same layer and the same material as the source electrode 120 and the drain electrode 122. In another embodiment, the pad member PAD may be connected to a switching thin film transistor Ts ( Figure 2 ) and may be formed of the same layer and the same material as the gate electrode of the switching thin film transistor Ts.
[0090] A planarization layer 130 is disposed on the source electrode 120 and the drain electrode 122 and covers the entire substrate 110. The planarization layer 130 may be disposed to cover the thin film transistor Tr.
[0091] The planarization layer 130 has a flat surface and has a contact hole 132 that exposes or does not cover the source electrode 120 or the drain electrode 122. For example, the planarization layer 130 may include, but is not limited to, SiO x and silicon nitride SiN x (where 0 < x ≤ 2), or organic insulating materials such as benzocyclobutene and / or photoacrylic.
[0092] The light emitting diode D is disposed on the planarization layer 130 corresponding to the light emitting area EA. The light emitting diode D comprises a first electrode 210 disposed on the planarization layer 130 and connected to the source electrode 120 or the drain electrode 122, and a light emitting layer 220 and a second electrode 230 sequentially stacked on the first electrode 210. As an example, the light emitting diode D may be positioned in each of a red sub-pixel area, a green sub-pixel area, a blue sub-pixel area and an optional white sub-pixel area, and may respectively emit red light, green light, blue light and white light.
[0093] The first electrode 210 can be individually disposed in each sub-pixel region SP. The first electrode 210 can be an anode and can include a conductive material with a relatively high work function value (e.g., transparent conductive oxide (TCO)). For example, the first electrode 210 can include, but is not limited to, indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), tin oxide (SnO), zinc oxide (ZnO), indium copper oxide (ICO), and / or aluminum:zinc oxide (AZO).
[0094] In one embodiment, the first electrode 210 may have a single-layer structure of a transparent conductive oxide. In another embodiment, the first electrode 210 may have a double-layer or triple-layer structure and further include a reflective layer. In this case, the first electrode 210 may be a reflective electrode.
[0095] In one embodiment, the reflective layer may include, but is not limited to, silver (Ag), an alloy comprising at least one of silver (Ag) and palladium (Pd), copper (Cu), indium (In) and neodymium (Nd), and / or an aluminum-palladium-copper (APC) alloy. For example, the first electrode 210 may have a bilayer structure of Ag / ITO or APC / ITO, or a trilayer structure of ITO / APC / ITO.
[0096] A dam layer 140 is disposed on the planarization layer 130 corresponding to the non-light-emitting region NEA and covers the periphery of the first electrode 210. The dam layer 140 may or may not cover the center of the first electrode 210 corresponding to the sub-pixel region SP. For example, the dam layer 140 may include a light-blocking material such as a black material, a light-shielding material, and / or a light-absorbing material. Alternatively, the dam layer 140 may include a material that absorbs a specific wavelength range.
[0097] In another embodiment, the dam layer 140 may have a laminated structure in which the color filter includes at least two colorants selected from red, green and blue color filter materials.
[0098] In one embodiment, the side 140a of the embankment 140 in contact with the outside of the light-emitting diode D ( Figure 4 The embankment 140 can have a cross-sectional shape that slopes downward toward the light-emitting layer 220. In particular, the side 140a of the embankment 140 can have a cross-sectional shape that gradually increases in width toward the first electrode 210, or a tapered cross-sectional shape, but is not limited thereto.
[0099] In some embodiments, the side surface 140a of the dam layer 140 may be curved with a predetermined curvature, or may extend downward without curvature. For example, the side surface 140a of the dam layer 140 may be positioned at an angle between about 30° and about 90° (e.g., about 45° and about 90°) relative to the surface of the first electrode 210, but is not limited thereto.
[0100] A pillar spacer 144 is disposed on the dam layer 140. The pillar spacer 144 can be configured to surround the light-emitting region EA disposed in each sub-pixel region SP of the light-emitting diode D. The pillar spacer 144 can have the same material as the dam layer 140. For example, the pillar spacer 144 may include a light-blocking or light-absorbing material and a bonding resin that disperses the light-blocking or light-absorbing material.
[0101] For example, the column spacer 144 may have a cross-sectional shape (trapezoidal or conical) that gradually increases in width toward the embankment 140, or it may have a cross-sectional shape (inverted trapezoidal or inverted conical) that gradually decreases in width toward the embankment 140, but is not limited thereto.
[0102] The light-emitting layer 220 is disposed on the first electrode 210. As an example, the light-emitting layer 220 may have a single-layer structure of a light-emitting material layer (EML). The EML may include organic light-emitting materials or inorganic light-emitting materials. In other words, the light-emitting display device 100 may be an organic light-emitting display device or an inorganic light-emitting display device.
[0103] In another embodiment, the light-emitting layer 220 may have a multilayer structure. As an example, in addition to the EML, the light-emitting layer 142 may also include at least one of the following: a hole injection layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL), a hole blocking layer (HBL), an electron transport layer (ETL), and an electron injection layer (EIL).
[0104] The second electrode 230 is disposed on the substrate 110 on which the light-emitting layer 220 is disposed. The second electrode 230 can be disposed over the entire display area and can comprise a conductive material with a relatively low work function value to serve as a cathode. For example, the second electrode 230 can include, but is not limited to, aluminum (Al), magnesium (Mg), calcium (Ca), silver (Ag), and alloys thereof (e.g., magnesium-silver alloy). The second electrode 230 can have a thin thickness to be translucent (semi-translucent).
[0105] An encapsulation layer (encapsulation film) 150 is disposed on the second electrode 230 to prevent or reduce the penetration of external oxygen and / or moisture into the light-emitting diode D. In one embodiment, the encapsulation layer 150 may have a laminated structure comprising, but not limited to, a first inorganic insulating layer 152, an organic insulating layer 154, and a second inorganic insulating layer 156.
[0106] Touch sensor (touch panel) 160 may be disposed on encapsulation layer 150 to provide sensing functionality. As an example, touch sensor 160 may include bridging electrodes or connecting electrodes BRG and touch electrodes 168, and may also include multiple insulating layers and / or buffer layers.
[0107] In one embodiment, the touch sensor 160 may include a first touch buffer layer 162a, a first touch insulating layer 164a, and a plurality of touch electrodes 166. Furthermore, the touch sensor 160 may also include a second touch insulating layer 164b and an organic touch insulating layer 168a and a second touch buffer layer 168b covering the touch electrodes 166. In some embodiments, the touch sensor 160 may be omitted.
[0108] A bridging electrode BRG is disposed on the first touch buffer layer 162a, and a first touch insulating layer 164a is configured to cover the bridging electrode BRG. A second touch insulating layer 164b is disposed on the first touch insulating layer 164a, and a plurality of touch electrodes 166 are disposed on the first touch insulating layer 164a and the second touch insulating layer 164b.
[0109] The bridging electrode BRG can be configured to be electrically connected to at least a portion of the plurality of touch electrodes 166. The first touch insulating layer 164a and the second touch insulating layer 164b can have contact holes that expose or do not cover the bridging electrode BRG. In this configuration, adjacent touch electrodes 166 can contact the bridging electrode BRG through the contact holes to be electrically connected to each other.
[0110] The first touch insulating layer 164a and the second touch insulating layer 164b may comprise inorganic insulating materials and / or organic insulating materials. For example, each of the first touch insulating layer 164a and the second touch insulating layer 164b may have a multilayer structure with alternating organic and inorganic layers. For example, the first touch insulating layer 164a may comprise inorganic insulating materials, and the second touch insulating layer 164b may comprise organic insulating materials, but are not limited thereto.
[0111] Each of the touch electrodes 166 may be disposed on the first touch insulating layer 164a and the second touch insulating layer 164b corresponding to the non-light-emitting region NEA of the embankment 140 and / or the black matrix 170 described later. Since the touch electrodes 166 are covered or obscured by the black matrix 170, the touch electrodes 166 are not visually identifiable from the outside, thereby minimizing or reducing the degradation of display quality. However, the arrangement of the touch electrodes 166 is not limited to this. For example, the touch electrode 168 may include, but is not limited to, the same transparent metal oxide as the first electrode 210.
[0112] An organic touch insulating layer 168a is disposed on the touch electrode 166 and covers the entire display area DA of the substrate 110.
[0113] The second touch buffer layer 168b is disposed on the organic touch insulating layer 168a and covers the entire display area DA. When the black matrix 170 and the color filter pattern (or color filter layer) 180 are disposed on the touch sensor 160, the second touch buffer layer 168b is configured to protect the touch sensor 160. For example, the second touch buffer layer 168b may include, but is not limited to, inorganic oxides and / or inorganic nitrides.
[0114] The black matrix 170 and the color filter pattern 180 are disposed on the encapsulation layer 150 or the touch sensor 160. The black matrix 170 and the color filter pattern 180 can minimize or reduce the degradation of the visibility and contrast of the display device 100 caused by external light while maintaining the high brightness of the light emitted from the light-emitting diode D.
[0115] The black matrix 170 is disposed corresponding to the non-light-emitting region NEA. The black matrix 170 may have an opening corresponding to the light-emitting diode D. In one embodiment, the black matrix 170 may include a light-blocking material (e.g., black resin, black dye, and / or black pigment) capable of blocking or absorbing light. Alternatively or additionally, another color filter layer including red (R), green (G), and / or blue (B) colorants may be laminated onto the black matrix 170.
[0116] In one embodiment, compared to the side 170a of the black matrix 170 adjacent to the light-emitting region EA, the side 140a of the embankment 140 adjacent to the light-emitting region EA can be further extended toward the light-emitting region EA by an extension length L ( Figure 4 Specifically, compared to the peripheral area of the black matrix 170 that contacts the color filter pattern 180, the peripheral area of the embankment 140 that contacts the light-emitting diode D can extend further to the light-emitting area EA to have a "pull-back" structure. In the inventive concept, the term "pull-back distance" can be used to describe the spacing L between the side 170a of the black matrix 170 adjacent to the light-emitting area EA and the side 140a of the embankment 140 adjacent to the light-emitting area EA. By introducing such a pull-back structure, the viewing angle brightness and color viewing angle characteristics of the display device 100 can be improved.
[0117] The area where the dike layer 140 and the black matrix 170 overlap in the non-luminescent region NEA can be defined as the first non-luminescent region NEA1. Figure 4 In the non-luminescent region NEA, the area where no black matrix 170 is set and only the embankment 140 is set by the pull-back structure can be defined as the second non-luminescent region NEA2. Figure 4 )
[0118] The color filter pattern 180 is configured corresponding to the opening of the black matrix 170. Specifically, the color filter pattern 180 is configured corresponding to the light-emitting area EA. When the sub-pixel area SP includes red sub-pixels, green sub-pixels, and blue sub-pixels, the color filter pattern 180 may include a red color filter pattern corresponding to the red sub-pixels, a green color filter pattern corresponding to the green sub-pixels, and a blue color filter pattern corresponding to the blue sub-pixels.
[0119] A red filter pattern may include at least one of a red dye and a red pigment. A green filter pattern may include at least one of a green dye and a green pigment. A blue filter pattern may include at least one of a blue dye and a blue pigment.
[0120] The first insulating layer 182 may be disposed on the black matrix 170 and the color filter pattern 180 and cover the entire substrate 110. The first insulating layer 182 may include inorganic insulating materials and / or organic insulating materials. Alternatively or additionally, a second insulating layer may be disposed on the first insulating layer 182.
[0121] An auxiliary black matrix 190 is disposed on a first insulating layer 182 in the display area DA and the non-display area NDA. In one embodiment, an adhesive layer 184 may be interposed between the first insulating layer 182 and the auxiliary black matrix 190. The adhesive layer 184 may include, but is not limited to, optically transparent resin (OCR) or gray adhesive resin.
[0122] The cover window CW is disposed on the auxiliary black matrix 190. The cover window CW constitutes the periphery of the display device 100. The cover window CW can be positioned on the outer side of the surface on the display panel where the image is displayed, transmitting the image of the display panel and protecting the display panel from external impacts or stress.
[0123] Cover glass (CW) can include tempered glass and / or tempered plastic materials. For example, cover glass (CW) can include, but is not limited to, materials selected from high-strength tempered glass, polyethylene terephthalate (PET), acrylic resins and / or (meth)acrylate resins (e.g., polymethyl methacrylate (PMMA)) to prevent or reduce scratches from the outside.
[0124] Among colors that humans can perceive, black is one that can be sensitively detected even with slight changes in level. Therefore, it is important to achieve a high level of blackness related to black reflective visibility. According to this disclosure, uniform black reflective visibility can be achieved over the entire area of the display surface side of the display device 100.
[0125] Figure 4This is a schematic diagram illustrating the components of the embankment, black matrix, and auxiliary black matrix related to optical density in a display device according to a first embodiment of the inventive concept.
[0126] Reference Figure 4 The embankment layer BNK is disposed in the non-light-emitting region NEA on the planarization layer PLN. The auxiliary black matrix 190 is disposed in the display area DA and the non-display area NDA below the cover window CW. In one embodiment, the upper structures in the display area DA and the non-display area NDA of the display device 100 can be configured identically. This allows for uniform black reflective visibility in the display area DA and the non-display area NDA adjacent to the display surface of the display device 100. The auxiliary black matrix 190 may include a first auxiliary black matrix 192 located in the non-display area NDA and a second auxiliary black matrix 194 located in the display area DA. The first auxiliary black matrix 192 has a first thickness t1, and the second auxiliary black matrix has a second thickness t2.
[0127] The dam layer (BNK) is closely disposed with the upper surface of the first electrode 210 and the lower surface of the light-emitting layer 220. When the dam layer (BNK) is patterned, the amount of light-blocking material in the dam layer (BNK) is relatively small to maintain processability and reliability. The black matrix (BM) is disposed adjacent to the color filter pattern (C / F). Considering the compatibility with the color filter pattern (C / F) and the processability and reliability when patterning the black matrix (BM), the amount of light-blocking material in the black matrix (BM) is limited.
[0128] On the other hand, when the auxiliary black matrix 190 is positioned below the cover window CW, issues such as manufacturability and reliability are relatively fewer. Therefore, the amount of light-blocking material in the auxiliary black matrix 190 can be increased relatively significantly. The auxiliary black matrices 190, 192, or 194 contain a relatively large amount of light-blocking material so that the auxiliary black matrices 190, 192, or 194 can have a first optical density OD1 per unit thickness.
[0129] The black matrix BM is disposed in the first non-emitting region NEA1 between the encapsulation layer ENC and the second auxiliary black matrix 194. The black matrix BM may have a second optical density OD2 per unit thickness. The second optical density OD2 of the black matrix BM per unit thickness may be lower than the first optical density OD1 per unit thickness of the auxiliary black matrices 190, 192 or 194.
[0130] The non-light-emitting region NEA is correspondingly disposed between the dam layer BNK, the planarization layer PLN, and the encapsulation layer ENC. The dam layer BNK may have a third optical density OD3 per unit thickness. The third optical density OD3 per unit thickness of the dam layer BNK may be lower than the first optical density OD1 per unit thickness of the auxiliary black matrices 190, 192, or 194 and the second optical density OD2 per unit thickness of the black matrix BM.
[0131] Each of the embankment layer BNK, black matrix BM, and auxiliary black matrix 190 may include a light-blocking material. In one embodiment, the light-blocking material may include a black colorant (e.g., a black pigment and / or a black dye) and / or a light-blocking material capable of absorbing light. For example, the light-blocking material may include, but is not limited to, carbon black, carbon nanotubes (CNTs), graphene, organic black, black dyes, perylene-containing materials, azo-containing materials, nano-based carbon materials, mixtures of red (R) / green (G) / blue (B) pigments / dyes, and multilayer thin film materials. Additionally, the light-blocking material may include organic materials that can be oxidized and converted to black during post-baking.
[0132] Each of the dam layer BNK, black matrix BM, and auxiliary black matrix 190 may include a bonding resin. The bonding resin that can be applied to the dam layer BNK, black matrix BM, and auxiliary black matrix 190 can be any photosensitive bonding resin.
[0133] In another embodiment, the planarization layer PLN corresponding to the non-luminescent region NEA may include a light-blocking material such as a black colorant. In this case, the third optical density OD3 per unit thickness of the dam layer BNK can be reduced by decreasing the amount of light-blocking material in the dam layer BNK.
[0134] Regarding black reflection visibility, the second auxiliary black matrix 194, black matrix BM, and embankment layer BNK in display area DA overlap with each other in the first non-emitting area NEA1. The second auxiliary black matrix 194 and embankment layer BNK in display area DA overlap with each other in the second non-emitting area NEA2. Regarding black reflection visibility, only the second auxiliary black matrix 194 in display area DA is set in the emitting area EA, which is provided with light-emitting diode D and color filter pattern C / F.
[0135] Regarding black reflective visibility, the total optical density of each region can be calculated by multiplying the optical density per unit thickness of the light-blocking material, including a black colorant, by the thickness of each component. The total optical density related to the black reflective visibility in the non-display region NDA, the first non-emitting region NEA1, the second non-emitting region NEA2, and the emitting region EA can be calculated using Equations 1, 2-2, 3-1, and 4-1, respectively.
[0136] Total optical density in NDA
[0137] First optical density per unit thickness OD1 × First thickness t1 (Equation 1)
[0138] [Total optical density in NEA1]
[0139] (First optical density OD1 × Second thickness t2 per unit thickness) + (Second optical density OD2 × Thickness t11 per unit thickness) + (Third optical density OD3 × Thickness t21 per unit thickness) (Equation 2-1)
[0140] [Total optical density in NEA2]
[0141] (First optical density OD1 per unit thickness × Second thickness t2) + (Third optical density OD3 per unit thickness × Thickness t21) (Equation 3-1)
[0142] [Total optical density in EA]
[0143] First optical density per unit thickness OD1 × Second thickness t2 (Equation 4-1)
[0144] The black reflective visibility in each region can be uniformly set by designing the total optical density in each region, such as the non-display area NDA and the second non-emitting area NEA2. The optical densities OD1, OD2, and OD3 per unit thickness, as well as the thicknesses t1, t2, t11, and t21 of the embankment layer BNK, the black matrix BM, and the auxiliary black matrix 190, can be adjusted so that the display device 100 can achieve information-free black reflective visibility on the display surface throughout the entire region.
[0145] In one embodiment, the first optical density OD1 per unit thickness of the auxiliary black matrices 190, 192, or 194 can be, but is not limited to, 1.1 to 2 times (e.g., 1.2 to 1.8 times) the second optical density OD2 per unit thickness of the black matrix BM. In another embodiment, the second optical density OD2 per unit thickness of the black matrix BM can be, but is not limited to, 1.2 to 2 times (e.g., 1.5 to 1.8 times) the third optical density OD3 per unit thickness of the dike layer BNK. In yet another embodiment, the first optical density OD1 per unit thickness of the auxiliary black matrices 190, 192, or 194 can be, but is not limited to, 1.3 to 3 times (e.g., 1.5 to 2 times) the third optical density OD3 per unit thickness of the dike layer BNK.
[0146] For example, the first optical density OD1 per 1 μm thickness of the auxiliary black matrix 190, 192, or 194 can be, but is not limited to, about 1.2 to about 2.0. The second optical density OD2 per 1 μm thickness of the black matrix BM can be, but is not limited to, about 1.0 to about 1.5. The third optical density OD3 per 1 μm thickness of the embankment layer BNK can be, but is not limited to, about 0.6 to about 1.2.
[0147] The first thickness t1 of the first auxiliary black matrix 192 may be different from the thickness t2 of the second auxiliary black matrix 194. In one embodiment, the thickness t1 of the first auxiliary black matrix 192 may be greater than the thickness t2 of the second auxiliary black matrix 194.
[0148] For better black reflective visibility, the black matrix BM and / or the embankment layer BNK can be additionally configured to be located in the non-emitting region NEA within the display area DA. Even if the thickness t2 of the second auxiliary black matrix 194 is designed to be smaller than the thickness t1 of the first auxiliary black matrix 192, more uniform black reflective visibility can be achieved in the non-display area NDA and the non-emitting region NEA.
[0149] In one embodiment, the first thickness t1 of the first auxiliary black matrix 192 can be, but is not limited to, about 5 to about 50 times (e.g., about 10 to about 30 times) the thickness t2 of the second auxiliary black matrix 194. For example, the first thickness t1 of the first auxiliary black matrix 192 can be, but is not limited to, about 1.0 μm to about 4.0 μm (e.g., about 1.5 μm to about 3.5 μm or about 2.0 μm to about 3.0 μm). The second thickness t2 of the second auxiliary black matrix 194 can be, but is not limited to, about 0.05 μm to about 0.5 μm (e.g., about 0.05 μm to about 0.3 μm or about 0.05 μm to about 0.2 μm).
[0150] The thickness t11 of the black matrix BM having a second optical density OD2 per unit thickness can be substantially the same as or greater than the thickness t21 of the embankment layer BNK having a third optical density OD3 per unit thickness. In one embodiment, the thickness t11 of the black matrix BM can be 1.0 to 1.5 times the thickness t21 of the embankment layer BNK. For example, the thickness t11 of the black matrix BM and the thickness t21 of the embankment layer BNK can be, but are not limited to, about 1.0 μm to 3.0 μm.
[0151] An auxiliary black matrix 190 is disposed on the entire upper region corresponding to the display area DA and the non-display area NDA, and is configured to adjust the first to third optical densities OD1, OD2, and OD3 per unit thickness, as well as the auxiliary black matrices 190, 192, or 194, the black matrix BM, and the thicknesses t1, t2, t11, and t21 of the embankment layers. In the display device 100, embankment layers BNK, black matrices BM, and / or auxiliary black matrices 190, 192, and 194 with different optical densities OD1, OD2, and OD3 per unit thickness and thicknesses t1, t2, t11, and t21 are respectively disposed in the display area DA and the non-display area NDA. Depending on the region, differences in the length of the incident and / or reflected external light paths can be overcome.
[0152] Auxiliary black matrices 190, 192, and 194 are disposed in the display area DA and the non-display area NDA below the cover window CW. In the display area and the non-display area NDA, a portion of the external light transmitted through the cover window CW is absorbed by the auxiliary black matrices 190, 192, and 194, while another portion of the external light not absorbed by the auxiliary black matrices 190, 192, and 194 is incident and reflected through the same or similar paths to the display panel or pad component PAD. Figure 1 More specifically, a uniform amount of external light can be incident on the display area DA and the non-display area NDA. The external light is incident and reflected in the display area DA and the non-display area NDA through similar paths, so that the reflection deviation of the external light according to the area can be minimized or reduced. Therefore, within the areas of the display device 100, optical density and light transmittance related to black reflective visibility can be uniformly set in the non-display area NDA, which is a region that does not transmit light, and in the non-light-emitting area NEA, such as the first non-light-emitting area NEA1.
[0153] Furthermore, external light reflected from metal electrodes or wires disposed within the display panel can be absorbed by each of the dam layer BNK, black matrix BM, and auxiliary black matrices 190, 192, and 194, which may include light-blocking materials. Therefore, the incidence of external light onto the LED D and the reflection of external light from the touch electrode 166 can be minimized or reduced, and the reabsorption of external light in the dam layer BNK, black matrix BM, and auxiliary black matrices 190, 192, and 194 can be maximized or enhanced, thereby preventing or reducing color unevenness caused by the reflection of external light.
[0154] Typically, ambient light diffraction color inhomogeneity may occur due to step differences caused by the thin-film transistor Tr. Additionally, rainbow color inhomogeneity may occur when the diffraction of reflected external light is further enhanced by the color filter layer pattern C / F, or may be caused by interference between adjacent sub-pixel regions SP, light reflection at conductive materials such as conductive films and / or electrodes within the display panel, and refractive index differences between layers through which light passes.
[0155] According to the first embodiment, by setting an auxiliary black matrix 190, a black matrix BM, and / or a dam layer BNK with adjusted optical densities OD1, OD2, and OD3 per unit thickness and thicknesses t1, t2, t11, and t21, external light can be prevented or at least suppressed from being reflected to the outside of the display device 100. Furthermore, the amount of light-blocking material in the black matrix BM and the dam layer BNK is not increased. Therefore, the process reliability for the black matrix BM and the dam layer BNK can be ensured.
[0156] exist Figure 4 In this embodiment, the thickness and / or cross-sectional shape of the second auxiliary black matrix 194, positioned corresponding to the display area DA, is exemplarily illustrated as being uniformly designed. In another embodiment, the thickness and cross-sectional shape of the second auxiliary black matrix can be modified in various ways. Figures 5 to 9 This is a schematic diagram illustrating the components of the embankment, black matrix, and auxiliary black matrix in a display device according to various other embodiments of the inventive concept.
[0157] Reference Figure 5 The auxiliary black matrix 190A is shown positioned below the cover window CW, constituting the outermost portion of the display device 100A, and wherein the display device 100A includes a first auxiliary black matrix 192 positioned corresponding to the non-display area NDA and a second auxiliary black matrix 194A positioned corresponding to the display area DA. (See reference...) Figure 6 The auxiliary black matrix 190B is disposed below the cover window CW, forming the outermost edge of the display device 100B. It includes a first auxiliary black matrix 192 positioned corresponding to the non-display area NDA and a second auxiliary black matrix 194B positioned corresponding to the display area DA. Figure 5 and Figure 6 In the first auxiliary black matrix 192, the first thickness t1 can be greater than the second thickness t2-1 or t2-2 of the second auxiliary black matrix 194A or 194B.
[0158] The second auxiliary black matrices 194A and 194B include a third auxiliary black matrix 196a positioned corresponding to the non-luminous region NEA and a fourth auxiliary black matrix 196b positioned corresponding to the luminous region EA. For example... Figure 5As shown, the third thickness t2-1 of the third auxiliary black matrix 196a can be greater than the fourth thickness t2-2 of the fourth auxiliary black matrix 196b. For example... Figure 6 As shown, the fourth thickness t2-2 of the fourth auxiliary black matrix 196b can be greater than the third thickness 2-1 of the third auxiliary black matrix 196a.
[0159] The total optical density related to the black reflective visibility in the first non-emitting area NEA1, the second non-emitting area NEA2, and the emitting area EA of the display device 100A or 100B can be calculated using Equations 2-2, 3-2, and 4-2, respectively.
[0160] [Total optical density in NEA1]
[0161] (First optical density OD1 × Third thickness t2-1 per unit thickness) + (Second optical density OD2 × Thickness t11 per unit thickness) + (Third optical density OD3 × Thickness t21 per unit thickness) (Equation 2-2)
[0162] [Total optical density in NEA2]
[0163] (First optical density OD1 per unit thickness × Third thickness t2-1) + (Third optical density OD3 per unit thickness × Thickness t21) (Equation 3-2)
[0164] [Total optical density in EA]
[0165] First optical density per unit thickness OD1 × fourth thickness t2-2 (Equation 4-2)
[0166] Reference Figure 5 The brightness in the luminous region EA can be increased by designing the fourth thickness t2-2 of the fourth auxiliary black matrix 196b to be smaller than the third thickness t2-1 of the third auxiliary black matrix 196a. (Refer to...) Figure 6 By designing the fourth thickness t2-2 of the fourth auxiliary black matrix 196b to be greater than the third thickness t2-1 of the third auxiliary black matrix 196a, the black reflective visibility in the luminous region EA can be made close to the black reflective visibility in the non-luminous region NEA.
[0167] The first thickness t1 of the first auxiliary black matrix 192 can be approximately 5 to approximately 50 times (e.g., approximately 10 to approximately 30 times) the second thickness t2-1 or t2-2 of the second auxiliary black matrix 194A or 194B. The first thickness t1 of the first auxiliary black matrix 192 can be compared with a reference... Figure 4 The same, and the second thickness t2-1 or t-2 of the second auxiliary black matrix 194A or 194B can be the same as the reference. Figure 4The second auxiliary black matrix 194 has the same second thickness t2.
[0168] Reference Figure 5 The fourth thickness t2-2 of the fourth auxiliary black matrix 196b, which is located corresponding to the luminescent region EA, can be about 1 / 10 to about 9 / 10 of the third thickness t2-1 of the third auxiliary black matrix 196a, which is located corresponding to the non-luminescent region NEA (e.g., about 1 / 5 to about 4 / 5, about 1 / 4 to about 3 / 4, or about 1 / 3 to about 1 / 2).
[0169] Reference Figure 6 The fourth thickness t2-2 of the fourth auxiliary black matrix 196b can be designed such that the brightness of the light transmitted through the fourth auxiliary black matrix 196b, which is positioned corresponding to the light-emitting region EA, can be 50% or higher than the brightness of the light emitted from the light-emitting diode D. For example, the fourth thickness t2-2 of the fourth auxiliary black matrix 196b, positioned corresponding to the light-emitting region EA, can be... Figure 6 The third thickness t2-1 of the third auxiliary black matrix 196a, correspondingly located in the non-luminescent region NEA, is approximately 1.5 to approximately 5 times (e.g., approximately 1.5 to approximately 3 times).
[0170] Reference Figure 7 An auxiliary black matrix 190C, positioned below the cover window CW, is configured to constitute the outermost portion of the display device 100C. The display device 100C includes a first auxiliary black matrix 192 positioned corresponding to the non-display area NDA and a second auxiliary black matrix 194C positioned corresponding to the display area DA. The first thickness t1 of the first auxiliary black matrix 192 may be greater than the second thickness t2-1, t2-1b, or t2-2 of the second auxiliary black matrix 194C.
[0171] The second auxiliary black matrix 194C includes a third auxiliary black matrix 196a1 positioned corresponding to the first non-emitting region NEA1, a fifth auxiliary black matrix 196a2 positioned corresponding to the second non-emitting region NEA2, and a fourth auxiliary black matrix 196b positioned corresponding to the emitting region EA. The fifth thickness t2-1b of the fifth auxiliary black matrix 196a2 can be designed to be greater than the third thickness t2-1a of the third auxiliary black matrix 196a1 and / or the fourth thickness t2-2 of the fourth auxiliary black matrix 196b.
[0172] The total optical density related to the black reflective visibility in the first non-emitting area NEA1, the second non-emitting area NEA2, and the emitting area EA of the display device 100C can be calculated using Equations 2-3, 3-3, and 4-3, respectively.
[0173] [Total optical density in NEA1]
[0174] (First optical density OD1 per unit thickness × Third thickness t2-1a) + (Second optical density OD2 per unit thickness × Thickness t11) + (Third optical density OD3 per unit thickness × Thickness t21) (Equation 2-3)
[0175] [Total optical density in NEA2]
[0176] (First optical density OD1 per unit thickness × Fifth thickness t2-1b) + (Third optical density OD3 per unit thickness × Thickness t21) (Equation 3-3)
[0177] [Total optical density in EA]
[0178] First optical density per unit thickness OD1 × fourth thickness t2-2 (Equation 4-3)
[0179] exist Figure 7 In the display device 100C shown, the fifth thickness t2-1b of the fifth auxiliary black matrix 196a2, which is positioned corresponding to the second non-emitting region NEA2, is designed to be relatively large. In this way, the black reflective visibility in the second non-emitting region NEA2 can be achieved to be close to the black reflective visibility in the first non-emitting region NEA1.
[0180] The first thickness t1 of the first auxiliary black matrix 192 can be approximately 5 to approximately 50 times (e.g., approximately 10 to approximately 30 times) the second thickness t2-1a, t2-1b, or t2-2 of the second auxiliary black matrix 194C. The first thickness t1 of the first auxiliary black matrix 192 can be compared with a reference... Figure 4 The same, and the second thickness t2-1a, t2-1b or t2-2 of the second auxiliary black matrix 194C can be the same as the reference. Figure 4 The second thickness t2 of the second auxiliary black matrix 194 is the same. The fifth thickness t2-1b of the fifth auxiliary black matrix 196a2, which is positioned corresponding to the second non-luminous region NEA2, can be about 1.5 to about 5 times (e.g., about 1.5 to about 3 times) of the third thickness t2-1a of the third auxiliary black matrix 196a1, which is positioned corresponding to the first non-luminous region NEA1, and / or the fourth thickness t2-2 of the fourth auxiliary black matrix 196b, which is positioned corresponding to the luminous region EA.
[0181] exist Figure 7 In this embodiment, the third thickness t2-1a of the third auxiliary black matrix 196a1 and the fourth thickness t2-2 of the fourth auxiliary black matrix 196b are exemplarily illustrated as substantially the same. In another embodiment, the third thickness t2-1a of the third auxiliary black matrix 196a1, which is positioned corresponding to the first non-emitting region NEA1, can be greater than (e.g., Figure 5 (as shown) or smaller than (as shown) Figure 6 (As shown) The fourth thickness t2-2 of the fourth auxiliary black matrix 196b is located corresponding to the luminescent region EA.
[0182] Reference Figure 8 An auxiliary black matrix 190D, positioned below the cover window CW, is configured to constitute the outermost portion of the display device 100D. The display device 100D includes a first auxiliary black matrix 192 positioned corresponding to the non-display area NDA and a second auxiliary black matrix 194D positioned corresponding to the display area DA. The first thickness t1 of the first auxiliary black matrix 192 is greater than the second thickness t2-1a, t2-1b, or t2-2 of the second auxiliary black matrix 194D.
[0183] The second auxiliary black matrix 194D includes a third auxiliary black matrix 196a1 positioned corresponding to the first non-emitting region NEA1, a fifth auxiliary black matrix 196a2 positioned corresponding to the second non-emitting region NEA2, and a fourth auxiliary black matrix 196b positioned corresponding to the emitting region EA. In this embodiment, the third thickness t2-1a of the third auxiliary black matrix 196a1 can be greater than the fifth thickness t2-1b of the fifth auxiliary black matrix 196a2. The fifth thickness t2-1b of the fifth auxiliary black matrix 196a2 can be greater than the fourth thickness t2-2 of the fourth auxiliary black matrix 196b.
[0184] about Figure 8 The total optical density of black reflective visibility in the first non-emitting region NEA1, the second non-emitting region NEA2, and the emitting region EA of the display device 100D shown can be referred to respectively. Figure 7 The result is calculated using equations 2-3, 3-3, and 4-3.
[0185] The first thickness t1 of the first auxiliary black matrix 192 can be approximately 5 to approximately 50 times (e.g., approximately 10 to approximately 30 times) the second thickness t2-1a, t2-1b, or t2-2 of the second auxiliary black matrix 194D. The first thickness t1 of the first auxiliary black matrix 192 can be compared with a reference... Figure 4 The same, and the second thickness t2-1a, t2-1b or t2-2 of the second auxiliary black matrix 194D can be the same as the reference. Figure 4 The second auxiliary black matrix 194 has the same second thickness t2.
[0186] The fifth thickness t2-1b of the fifth auxiliary black matrix 196a2, positioned corresponding to the second non-luminescent region NEA2, can be approximately 1 / 10 to approximately 9 / 10 (e.g., approximately 1 / 5 to approximately 4 / 5, approximately 1 / 4 to approximately 3 / 4, or approximately 1 / 3 to approximately 1 / 2) of the third thickness t2-1a of the third auxiliary black matrix 196a1, positioned corresponding to the first non-luminescent region NEA1. The fourth thickness t2-2 of the fourth auxiliary black matrix 196b, positioned corresponding to the luminescent region EA, can be approximately 1 / 10 to approximately 9 / 10 (e.g., approximately 1 / 5 to approximately 4 / 5, approximately 1 / 4 to approximately 3 / 4, or approximately 1 / 3 to approximately 1 / 2) of the fifth thickness t2-1b of the fifth auxiliary black matrix 196a2, positioned corresponding to the second non-luminescent region NEA2.
[0187] Reference Figure 9 An auxiliary black matrix 190E, positioned below the cover window CW, is configured to constitute the outermost portion of the display device 100E. The display device 100E includes a first auxiliary black matrix 192 positioned corresponding to the non-display area NDA and a second auxiliary black matrix 194E positioned corresponding to the display area DA. The first thickness t1 of the first auxiliary black matrix 192 may be greater than the second thickness t2-2 of the second auxiliary black matrix 194E. The second auxiliary black matrix 194E may be configured such that the second thickness t2-2 gradually decreases from the first non-emitting area NEA1 through the second non-emitting area NEA2 to the emitting area EA.
[0188] exist Figure 8 and Figure 9 In the illustrated embodiment, the black reflective visibility on the display surface of the display device 100D or 100E can gradually change towards the first non-emissive region NEA1, the second non-emissive region NEA2, and the emissive region EA. Therefore, a more uniform black reflective visibility can be achieved across the entire area of the display device 100D or 100E. Furthermore, as... Figure 9 As shown, when the second thickness t2-2 of the second auxiliary black matrix 194E is arranged to have a gradient cross section, irregular reflections of external light that may be caused in each region can be prevented or reduced.
[0189] [Second Implementation]
[0190] Figure 10 Examples are shown along Figure 1 The diagram shows a cross-sectional view taken by line III-III, and also shows a schematic cross-sectional view of a display device according to a second embodiment of the inventive concept.
[0191] Reference Figure 10The display device 300 includes a substrate 310 having a non-display area NDA and a display area DA including a light-emitting area EA and a non-light-emitting area NEA, a light-emitting diode D disposed on the substrate 310 corresponding to the light-emitting area EA, a dam layer 340 disposed on the substrate 310 corresponding to the non-light-emitting area NEA, a black matrix 370 disposed on the dam layer 340 corresponding to the non-light-emitting area NEA, a color filter pattern 380 disposed on the light-emitting diode D corresponding to the light-emitting area EA, and an auxiliary black matrix 390 disposed on the black matrix 370 and the color filter pattern 380.
[0192] The substrate 310 defines a subpixel region SP including a red subpixel region, a green subpixel region, a blue subpixel region, and an optional white subpixel region. Figure 2 ).
[0193] A thin-film transistor Tr is disposed on substrate 310. The thin-film transistor Tr includes a semiconductor layer 312, a gate electrode 316, a source electrode 320, and a drain electrode 322. The thin-film transistor Tr can be a driving thin-film transistor Td (… Figure 2 ).
[0194] The semiconductor layer 312 can be directly disposed on the substrate 301 or disposed on a buffer layer that can be disposed on the substrate 310. For example, the semiconductor layer 312 may include, but is not limited to, oxide semiconductor.
[0195] A gate insulating layer 314 may be disposed on the semiconductor layer 312 and cover the entire substrate 310. A gate electrode 316 comprising a conductive material is disposed on the gate insulating layer 314 corresponding to the center of the semiconductor layer 312. The gate insulating layer 314 may be patterned to have a shape consistent with that of the gate electrode 316.
[0196] An interlayer insulating layer 318 is disposed on the gate electrode 316. The interlayer insulating layer 318 may have a first semiconductor contact hole 319a and a second semiconductor contact hole 319b that expose or do not cover both sides of the semiconductor layer 312. The first semiconductor contact hole 319a and the second semiconductor contact hole 319b are spaced apart from the gate electrode 316 on both sides of the gate electrode 316.
[0197] Source electrode 320 and drain electrode 322, comprising conductive materials such as metallic components, are disposed on interlayer insulating layer 3180. Source electrode 320 and drain electrode 322 are spaced apart from each other and gate electrode 316 is centered, and are in contact with both sides of semiconductor layer 312 through first semiconductor contact hole 319a and second semiconductor contact hole 319b.
[0198] A planarization layer 330 is disposed on the source electrode 320 and the drain electrode 322 and covers the entire substrate 310. The planarization layer 330 has contact holes 332 that may or may not cover the source electrode 320 or the drain electrode 322.
[0199] The light-emitting diode D includes a first electrode 410 disposed on a planarization layer 330 and connected to a source electrode 320 or a drain electrode 322, and a light-emitting layer 420 and a second electrode 430 sequentially stacked on the first electrode 410.
[0200] A dam layer 340 is disposed on a planarization layer 330 corresponding to the non-light-emitting region NEA. In one embodiment, the side surface 340a of the dam layer 340 ( Figure 11 It can contact the light-emitting diode D. The side 340a of the embankment 340 can have, but is not limited to, a tapered cross-section. The column spacer 344 can be disposed on the embankment 340. The column spacer 344 can have, but is not limited to, a tapered or inverted tapered shape.
[0201] An encapsulation layer 350 is disposed on the second electrode 430. The encapsulation layer 350 may have, but is not limited to, a laminated structure of a first inorganic insulating layer 352, an organic insulating layer 354, and a second inorganic insulating layer 356.
[0202] Touch sensor 360 may be disposed on encapsulation layer 350. In one embodiment, touch sensor 360 may include a first touch buffer layer 362a, a bridging electrode BRG disposed on the first touch buffer layer 362a corresponding to the non-light-emitting area NEA, a first touch insulating layer 364a disposed on the bridging electrode BRG, a second touch insulating layer 364b disposed on the first touch insulating layer 364a, and a plurality of touch electrodes 366 disposed on the second touch insulating layer 364b corresponding to the non-light-emitting area NEA. Touch sensor 360 may further include an organic insulating layer 368a disposed on the touch electrodes 366 and a second touch buffer layer 368b disposed on the organic insulating layer 368a.
[0203] The black matrix 370 is disposed on the encapsulation layer 350 or the touch sensor 360 corresponding to the non-light-emitting area NEA. In the second embodiment, the black matrix 370 includes a first black matrix 372 disposed on the encapsulation layer 350 or the touch sensor 360 corresponding to the non-light-emitting area NEA, and a second black matrix 374 disposed on the first black matrix 372 corresponding to the non-light-emitting area NEA.
[0204] A color filter pattern 380 is disposed on the encapsulation layer 350 or the touch sensor 360 corresponding to the light-emitting area EA. The colorant included in the color filter pattern 380 may have different refractive indices depending on the wavelength, and the light emitted from the light-emitting diode D may be scattered and diffused in all directions while passing through the color filter pattern 380.
[0205] Light exceeding a specific viewing angle should be absorbed by the black matrix 370 to achieve high contrast. In a second embodiment of the inventive concept, the first black matrix 372 and the second black matrix 374 are sequentially arranged corresponding to the non-light-emitting area NEA to achieve high contrast, and a display device 300 with further improved viewing angle characteristics can be realized.
[0206] In one embodiment, after forming the first black matrix 372, the color filter pattern 380 and the second black matrix 374 can be formed sequentially. In this case, a portion of the colorant used to form the color filter pattern 380 can remain on the first black matrix 372. Thus, the second black matrix 374 can be configured to shield the colorant used to form the color filter pattern 380. Light passing through the first black matrix 372 and / or the color filter pattern 380 can be further blocked in the second black matrix 374, thereby further improving the viewing angle characteristics of the display device 300.
[0207] A first insulating layer 382 is disposed on the black matrix 370 and the color filter pattern 380, and a second insulating layer may be disposed on the first insulating layer 382. An auxiliary black matrix 390 is disposed on the first insulating layer 382 in the display area DA and the non-display area NDA. In one embodiment, an adhesive layer 384 may be inserted between the first insulating layer 382 and the auxiliary black matrix 390. A cover window CW is disposed on the auxiliary black matrix 390.
[0208] Figure 11 This is a schematic diagram illustrating the components of a dam layer, a black matrix, and an auxiliary black matrix in a display device according to a second embodiment of the inventive concept, which are related to optical density by region.
[0209] Reference Figure 11 The first thickness t1 of the first auxiliary black matrix 392, which is positioned corresponding to the non-display area NDA, can be greater than the second thickness t2 of the second auxiliary black matrix 394, which is positioned corresponding to the display area DA. The auxiliary black matrices 390, 392, and 394 can have a first optical density OD1 per unit thickness.
[0210] A first black matrix BM1 and a second black matrix BM2 are sequentially arranged corresponding to the non-emitting region NEA between the encapsulation layer ENC and the second auxiliary black matrix 394. Both the first black matrix BM1 and the second black matrix BM2 can be arranged within the first non-emitting region NE1. The first black matrix BM1 can have a second optical density OD2-1 per unit thickness, and the second black matrix BM2 can have a second optical density OD2-2 per unit thickness.
[0211] In one embodiment, the second optical density OD2-1 per unit thickness of the first black matrix BM1 may have a value substantially the same as the second optical density OD2-2 per unit thickness of the second black matrix BM2. Each of the second optical density OD2-1 per unit thickness of the first black matrix BM1 and the second optical density OD2-2 per unit thickness of the second black matrix BM2 may be lower than the first optical density OD1 per unit thickness of the auxiliary black matrices 390, 392, and 394.
[0212] The dam layer BNK is disposed between the planarization layer PLN and the encapsulation layer ENC, corresponding to the non-emitting region NEA. The dam layer BNK may have a third optical density OD3 per unit thickness. The third optical density OD3 per unit thickness of the dam layer BNK may be lower than the first optical density OD1 per unit thickness of the auxiliary black matrices 390, 392 and 394, the second optical density OD2-1 per unit thickness of the first black matrix BM1 and the second optical density OD2-2 per unit thickness of the second black matrix BM2.
[0213] In one embodiment, compared to the side 370a of the first black matrix 372 and the second black matrix 374 that contacts the outside of the color filter pattern C / F, the side 340a of the embankment 340 that contacts the outside of the light-emitting diode (e.g., the light-emitting layer 420) can be further extended back by a pullback length L into the light-emitting region EA.
[0214] Regarding black reflection visibility, the first auxiliary black matrix 392 is positioned in the non-display area NDA. The second auxiliary black matrix 394, the first black matrix BM1, the second black matrix BM2, and the embankment layer BNK overlap in the first non-emitting area NEA1 in the display area DA. The second auxiliary black matrix 394 and the embankment layer BNK overlap in the second non-emitting area NEA2. Regarding black reflection visibility, only the second auxiliary black matrix 394 in the display area DA is configured to be located in the emitting area EA, where a light-emitting diode D and a color filter pattern C / F are provided.
[0215] The total optical density associated with the visibility of black reflections in the non-display area NDA can be obtained by referring to Figure 4The total optical density related to the black reflective visibility in the first non-luminous region NEA1, the second non-luminous region NEA2, and the luminous region EA can be calculated using Equations 2-4, 3-4, and 4-4, respectively.
[0216] [Total optical density in NEA1]
[0217] (First optical density OD1 × Second thickness t2 per unit thickness) + (Second optical density OD2-1 × Thickness t11-1 per unit thickness) + (Second optical density OD2-2 × Thickness t11-2) + (Third optical density OD3 × Thickness t21 per unit thickness) (Equation 2-4)
[0218] [Total optical density in NEA2]
[0219] (First optical density OD1 per unit thickness × Second thickness t2) + (Third optical density OD3 per unit thickness × Thickness t21) (Equation 3-4)
[0220] [Total optical density in EA]
[0221] First optical density per unit thickness OD1 × Second thickness t2 (Equation 4-4)
[0222] The first optical density OD1 per unit thickness of the auxiliary black matrices 390, 392, and 394 and the third optical density OD3 per unit thickness of the embankment layer BNK can be compared with the reference. Figure 4 The second optical density OD2-1 per unit thickness of the first black matrix BM1 and the second optical density OD2-2 per unit thickness of the second black matrix BM2 can be compared with the reference. Figure 4 The second optical density OD2 of the black matrix BM is the same.
[0223] The first thickness t1 of the first auxiliary black matrix 392, positioned corresponding to the non-display area NDA, can be greater than the second thickness t2 of the second auxiliary black matrix 394, positioned corresponding to the display area DA. The first thickness t1 of the first auxiliary black matrix 392 and the second thickness t2 of the second auxiliary black matrix 394 can be compared with a reference... Figure 4 The same.
[0224] In one embodiment, the sum of the thickness t11-1 of the first black matrix BM1 having a second optical density OD2-1 per unit thickness and the thickness t11-2 of the second black matrix BM2 having a second optical density OD2-2 per unit thickness can be compared with a reference. Figure 4The thickness t11 of the first black matrix BM1 is basically the same. In one embodiment, the first black matrix BM1 may have a thickness t11-1 equal to or greater than the thickness t11-2 of the second black matrix BM2. In this case, the viewing angle characteristics of the display device 300 can be further improved.
[0225] In another embodiment, the sum of the thickness t11-1 of the first black matrix BM1 having a second optical density OD2-1 per unit thickness and the thickness t11-2 of the second black matrix BM2 having a second optical density OD2-2 per unit thickness can be substantially the same as or greater than the thickness t12 of the embankment layer BNK having a third optical density OD3 per unit thickness.
[0226] According to the implementation, the length differences of the incident and / or reflected external light paths can be overcome according to the region. External light is incident and reflected in the display area DA and the non-display area NDA through similar paths, so that the reflection deviation of external light according to the region can be minimized or reduced. Within the display device 300, the optical density and light transmittance related to black reflective visibility can also be uniformly set in the non-display area NDA, which is a region that does not transmit light, and in the non-light-emitting area NEA, such as the first non-light-emitting area NEA1. Uniform black reflective visibility can be achieved over the entire display surface of the display device 300. The reabsorption of external light in the embankment layer BNK, the first black matrix BM1, the second black matrix BM2, and the auxiliary black matrices 390, 392, and 394 is improved, so that the reflection of external light and the stains caused by the reflection of external light can be minimized or reduced.
[0227] In another embodiment, the thickness and cross-sectional shape of the second auxiliary black matrix can be modified in various ways. Figures 12 to 16 This is a schematic diagram illustrating the components of the embankment, black matrix, and auxiliary black matrix in a display device according to various other embodiments of the inventive concept.
[0228] Reference Figure 12 An auxiliary black matrix 390A is disposed below the cover window CW constituting the outermost portion of the display device 300A, wherein the display device 300A includes a first auxiliary black matrix 392 positioned corresponding to the non-display area NDA and a second auxiliary black matrix 394A positioned corresponding to the display area DA. (Refer to...) Figure 13 The auxiliary black matrix 390B can be disposed below the outermost cover window CW constituting the display device 300B, wherein the display device 300B includes a first auxiliary black matrix 392 positioned corresponding to the non-display area NDA and a second auxiliary black matrix 394B positioned corresponding to the display area DA. Figure 12 and Figure 13In the first auxiliary black matrix 392, the first thickness t1 can be greater than the second thickness t2-1 or t2-2 of the second auxiliary black matrix 394A or 394B.
[0229] exist Figure 12 and Figure 13 In this configuration, the second auxiliary black matrices 394A and 394B include a third auxiliary black matrix 396a positioned corresponding to the non-emitting region NEA and a fourth auxiliary black matrix 396b positioned corresponding to the emitting region EA. For example... Figure 12 As shown, the third thickness t2-1 of the third auxiliary black matrix 396a can be greater than the fourth thickness t2-2 of the fourth auxiliary black matrix 396b. For example... Figure 6 As shown, the fourth thickness t2-2 of the fourth auxiliary black matrix 396b can be greater than the third thickness 2-1 of the third auxiliary black matrix 396a.
[0230] The total optical density related to the black reflective visibility in the first non-emitting area NEA1, the second non-emitting area NEA2, and the emitting area EA of the display device 100A or 100B can be calculated using Equations 2-5, 3-5, and 4-5, respectively.
[0231] [Total optical density in NEA1]
[0232] (First optical density OD1 × Third thickness t2-1 per unit thickness) + (Second optical density OD2-1 × Thickness t11-1 per unit thickness) + (Second optical density OD2-2 × Thickness t11-2 per unit thickness) + (Third optical density OD3 × Thickness t21 per unit thickness) (Equation 2-5)
[0233] [Total optical density in NEA2]
[0234] (First optical density OD1 per unit thickness × Third thickness t2-1) + (Third optical density OD3 per unit thickness × Thickness t21) (Equation 3-5)
[0235] [Total optical density in EA]
[0236] First optical density per unit thickness OD1 × fourth thickness t2-2 (Equation 4-5)
[0237] Figure 12 and Figure 13 The first thickness t1 of the first auxiliary black matrix 392, the third thickness t2-1 of the third auxiliary black matrix 396a corresponding to the non-emitting region NEA, and the fourth thickness t2-2 of the fourth auxiliary black matrix 396b shown can be compared with the reference. Figure 5 and Figure 6 The same.
[0238] Reference Figure 14 An auxiliary black matrix 390C is disposed below the cover window CW constituting the outermost part of the display device 300C. The display device 300C includes a first auxiliary black matrix 392 positioned corresponding to the non-display area NDA and a second auxiliary black matrix 394C positioned corresponding to the display area DA. The first thickness t1 of the first auxiliary black matrix 392 may be greater than the second thickness t2-1, t2-1b, or t2-2 of the second auxiliary black matrix 394C.
[0239] The second auxiliary black matrix 394C includes a third auxiliary black matrix 396a1 positioned corresponding to the first non-emitting region NEA1, a fifth auxiliary black matrix 396a2 positioned corresponding to the second non-emitting region NEA2, and a fourth auxiliary black matrix 396b positioned corresponding to the emitting region EA. The fifth thickness t2-1b of the fifth auxiliary black matrix 396a2 can be designed to be greater than the third thickness t2-1a of the third auxiliary black matrix 396a1 and / or the fourth thickness t2-2 of the fourth auxiliary black matrix 396b.
[0240] The total optical density related to the black reflective visibility in the first non-emitting area NEA1, the second non-emitting area NEA2, and the emitting area EA of the display device 300C can be calculated using Equations 2-6, 3-6, and 4-6, respectively.
[0241] [Total optical density in NEA1]
[0242] (First optical density OD1 × third thickness t2-1a per unit thickness) + (Second optical density OD2-1 × thickness t11-1 per unit thickness) + (Second optical density OD2-2 × thickness t11-2 per unit thickness) + (Third optical density OD3 × thickness t21 per unit thickness) (Equation 2-6)
[0243] [Total optical density in NEA2]
[0244] (First optical density OD1 per unit thickness × Fifth thickness t2-1b) + (Third optical density OD3 per unit thickness × Thickness t21) (Equation 3-6)
[0245] [Total optical density in EA]
[0246] First optical density per unit thickness OD1 × fourth thickness t2-2 (Equation 4-6)
[0247] The first thickness t1 of the first auxiliary black matrix 392, the third thickness t2-1a of the third auxiliary black matrix 396a1 located corresponding to the first non-emitting region NEA1, the fifth thickness t2-1b of the fifth auxiliary black matrix 396a2 located corresponding to the second non-emitting region NEA2, and the fourth thickness t2-2 of the fourth auxiliary black matrix 396b located corresponding to the emitting region EA can be compared with reference to Figure 7 The same.
[0248] exist Figure 14 In this embodiment, the third thickness t2-1a of the third auxiliary black matrix 396a1 is configured to be substantially the same as the fourth thickness t2-2 of the fourth auxiliary black matrix 396b. In another embodiment, the third thickness t2-1a of the third auxiliary black matrix 396a1, which is positioned corresponding to the first non-emitting region NEA1, can be greater than (e.g., Figure 12 (as shown) or smaller than (as shown) Figure 13 (As shown) The fourth thickness t2-2 of the fourth auxiliary black matrix 396b is located corresponding to the luminescent region EA.
[0249] Reference Figure 15 The auxiliary black matrix 390D can be disposed below the cover window CW constituting the outermost part of the display device 300D, wherein the display device 300D includes a first auxiliary black matrix 392 positioned corresponding to the non-display area NDA and a second auxiliary black matrix 394D positioned corresponding to the display area DA. The first thickness t1 of the first auxiliary black matrix 392 can be greater than the second thickness t2-1a, t2-1b or t2-2 of the second auxiliary black matrix 394D.
[0250] The second auxiliary black matrix 394D includes a third auxiliary black matrix 396a1 positioned corresponding to the first non-emitting region NEA1, a fifth auxiliary black matrix 396a2 positioned corresponding to the second non-emitting region NEA2, and a fourth auxiliary black matrix 396b positioned corresponding to the emitting region EA. In this embodiment, the third thickness t2-1a of the third auxiliary black matrix 396a1 positioned corresponding to the first non-emitting region NEA1 can be greater than the fifth thickness t2-1b of the fifth auxiliary black matrix 396a2 positioned corresponding to the second non-emitting region NEA2. The fifth thickness t2-1b of the fifth auxiliary black matrix 396a2 positioned corresponding to the second non-emitting region NEA2 can be greater than the fourth thickness t2-2 of the fourth auxiliary black matrix 396b positioned corresponding to the emitting region EA.
[0251] about Figure 15 The total optical density of black reflective visibility in the first non-emitting region NEA1, the second non-emitting region NEA2, and the emitting region EA of the display device 300D shown can be obtained by referring to... Figure 14 Use equations 2-6, 3-6, and 4-6 to calculate.
[0252] The first thickness t1 of the first auxiliary black matrix 392, the third thickness t2-1a of the third auxiliary black matrix 396a1, the fifth thickness t2-1b of the fifth auxiliary black matrix 396a-2, and the fourth thickness t2-2 of the fourth auxiliary black matrix 396b can be compared with reference to... Figure 8 The same.
[0253] Reference Figure 16 The auxiliary black matrix 390E can be disposed below the cover window CW constituting the outermost part of the display device 300E, wherein the display device 300E includes a first auxiliary black matrix 392 positioned corresponding to the non-display area NDA and a second auxiliary black matrix 394E positioned corresponding to the display area DA. The first thickness t1 of the first auxiliary black matrix 392 can be greater than the second thickness t2-2 of the second auxiliary black matrix 394E. The second auxiliary black matrix 394E can be configured such that the second thickness t2-2 gradually decreases from the first non-emitting area NEA1 through the second non-emitting area NEA2 to the emitting area EA.
[0254] [Third Implementation Method]
[0255] The display device according to this disclosure can be a foldable display device. Figure 17 A schematic exploded perspective view of a display device according to a third embodiment of the inventive concept is shown. Figure 18 A schematic cross-sectional view of a display device according to a third embodiment of the inventive concept is shown.
[0256] Reference Figure 17 and Figure 18 The display device 500 includes a folding region FR and a non-folding region NFR, and can be folded along a first (Y) direction. The display device 500 may include non-folding regions NFR on both sides of the folding region FR along the first direction.
[0257] Display device 500 may be an outward fold with the display surface exposed to the outside, but is not limited thereto. Alternatively or additionally, display device 30 may be an inward fold with the display surface hidden therein.
[0258] In one embodiment, the display panel DP can be folded inward or outward relative to the folding axis FA. As used herein, the folding axis FA represents the center of a folded region having a defined curvature folded along an imaginary line. Although the display panel DP is in Figure 17 It is shown as folded in the central part, but the entire display panel DP can be freely deformed.
[0259] The display panel (DP) may include a substrate (SUB) and a component layer for displaying images. The substrate (SUB) includes a flexible material that allows the display area to be folded inwards or outwards. For example, the component layer may include a thin-film transistor (TFT) component layer and a light-emitting diode (LEL) layer disposed in the display area on the substrate (SUB).
[0260] The encapsulation layer ENC is disposed on the light-emitting element layer LEL, the touch layer (touch sensor) TL is disposed on the encapsulation layer LED, and the cover window CW is disposed on the touch layer TL. In addition, the color filter layer and / or black matrix can be disposed on the touch layer TL (e.g., disposed between the touch layer TL and the cover window CW).
[0261] A plate PLT is disposed on the lower surface of a substrate SUB to support the substrate SUB. For example, the plate PLT may include a back plate BP, a top plate PT, and a bottom plate PB disposed sequentially on the lower surface of the substrate SUB.
[0262] A thin-film transistor (TFT) element layer includes a semiconductor layer, a gate electrode, a source electrode, a drain electrode, a gate insulating layer, and an interlayer insulating layer. A thin-film transistor can have... Figure 3 or Figure 10 The structure shown. A thin-film transistor can be a driving thin-film transistor and can include an oxide semiconductor.
[0263] The light-emitting element layer (LEL) may include light-emitting diodes (LEDs), a dam layer, a color filter pattern, a black matrix, and an auxiliary black matrix. The arrangement and / or shape of the LEDs, dam layer, color filter pattern, black matrix, and auxiliary black matrix may be consistent with a reference. Figures 3 to 16 The same.
[0264] The substrate SUB, on which thin-film transistor (TFT) element layers and light-emitting element (LEL) layers are disposed, can be encapsulated by an encapsulation layer ENC. The encapsulation layer ENC prevents or reduces the penetration of external oxygen and / or moisture into the light-emitting element (LEL) layer. The cover window CW forms the periphery of the display device 500.
[0265] The backsheet (BP) can include organic materials with folding properties. For example, the backsheet (BP) can include, but is not limited to, polyimide (PI).
[0266] The top plate (PT) and bottom plate (PB) may include metal components, and the exposed thickness of the bottom plate (PB) may be greater than the thickness of the top plate (PT). For example, the top plate (PT) may include SUS301 with relatively high hardness, and the bottom plate (PB) may include SUS313 with high corrosion resistance and acid resistance, but are not limited thereto.
[0267] The bottom panel PB includes multiple openings OP in the folding area FR, which improves the folding characteristics of the display device 500. In one embodiment, the multiple openings OP can be configured to penetrate the surface and / or back surface of the bottom panel PB.
[0268] Multiple adhesive components AD1, AD2, AD3, AD4, and AD5 can be disposed among multiple components in the display device 500. For example, the first adhesive component AD1 can be disposed between the touch layer TL and the cover window CW; the second adhesive component AD2 can be disposed between the encapsulation layer ENC and the touch layer TL; the third adhesive component AD3 can be disposed between the substrate SUB and the backplane BP; the fourth adhesive component AD4 can be disposed between the backplane BP and the top of the board PT; and the fifth adhesive component AD5 can be disposed between the top of the board PT and the bottom of the board PB. Each of the first to fifth adhesive components AD1, AD2, AD3, AD4, and AD5 may include an optically transparent adhesive (OCA) and / or a pressure-sensitive adhesive (PSA).
[0269] According to the third embodiment, a display device 500 can be realized that has uniform reflective visibility throughout the entire area, minimizes or reduces stains caused by reflection of external light, and has good luminous brightness. In particular, a foldable display that has the advantage of flexibility by omitting the polarizer can be manufactured. Display devices that implement ESG can be manufactured with the advantages of low reflection and low power consumption.
[0270] [Example]
[0271] The design is shown in Table 1 below. Figure 11 The optical density and thickness of the embankment, black matrix, and auxiliary black matrix are shown, and the total optical density OD for each region is calculated. The first optical density OD1 per 1 μm thickness of the auxiliary black matrix BM is set to 1.458, each of the second optical densities OD2-1 and OD2-2 per 1 μm thickness of the first black matrix BM1 and the second black matrix BM2 is set to 1.3, and the third optical density OD3 per 1 μm thickness of the embankment is set to 0.8.
[0272] For comparison, the auxiliary black matrix is placed only in the non-display area, and a single black matrix is applied to calculate the total optical density for each area. The optical density for each configuration is calculated by multiplying the optical density per unit thickness by the thickness. The transmittance T is calculated using the following formula and converted to a percentage.
[0273] T=10 -OD
[0274] [Table 1] Total optical density and transmittance by region in the display device
[0275]
[0276] Referring to Table 1, in the comparative example, the total optical density and transmittance in the first non-emitting region NEA1, where the dike layer and the black matrix overlap, are 3.15% and 0.07%, respectively. In the example, the total optical density and transmittance in the first non-emitting region NEA are 3.43% and 0.04%, respectively. Compared to the comparative example, in the example, the transmittance in the first non-emitting region NEA1 is reduced by 0.03%, making it more uniformly close to the transmittance in the non-display region NDA.
[0277] In the comparative example, the total optical density and transmittance in the second non-emitting region NEA2 were 1.2% and 6.31%, respectively. In the example, the total optical density and transmittance in the second non-emitting region NEA2 were 1.35% and 4.5%, respectively. Compared to the comparative example, in the example where the transmittance is closer to that in the non-display region NDA, the transmittance in the second non-emitting region NEA2 decreased by 1.8%.
[0278] In the comparative example, the total optical density and transmittance in the luminescent region EA were 0 and 100%, respectively. In the example, the total optical density and transmittance in the luminescent region EA were 0.15 and 71.5%, respectively. Compared to the comparative example, the transmittance of the luminescent region EA decreased by 28.5%, but remained close to the transmittance of other regions.
[0279] Based on the results in Table 1, it is confirmed that by arranging the embankment, black matrix, and auxiliary black matrix according to this disclosure and adjusting the optical density and thickness of these structures, a display device with improved black reflective visibility throughout the entire area can be realized.
[0280] It will be apparent to those skilled in the art that various modifications and variations can be made to the inventive concept without departing from its scope. Therefore, the inventive concept is intended to cover all modifications and variations thereof, provided they fall within the scope of the appended claims.
[0281] Cross-references to related applications
[0282] This application claims priority to Korean Patent Application No. 10-2025-0025550, filed in Korea on February 27, 2025, the entire contents of which are hereby expressly incorporated by reference.
Claims
1. A display device, the display device comprising: A substrate having a non-display area and a display area, the display area including a light-emitting area and a non-light-emitting area; A light-emitting diode, wherein the light-emitting diode is disposed on the substrate corresponding to the light-emitting area; A dam layer is disposed adjacent to the light-emitting diode, corresponding to the non-light-emitting area; An encapsulation layer is disposed on the light-emitting diode and the diaphragm layer; A color filter pattern is disposed on the encapsulation layer corresponding to the light-emitting area; A black matrix, which is disposed on the encapsulation layer corresponding to the non-light-emitting area; as well as An auxiliary black matrix is disposed on the substrate in the non-display area, and the auxiliary black matrix is disposed on the color filter pattern and the black matrix in the display area. The auxiliary black matrix disposed in the non-display area has a first thickness that is thicker than the second thickness of the auxiliary black matrix disposed in the display area.
2. The display device according to claim 1, wherein, The first portion of the auxiliary black matrix, positioned on the color filter pattern corresponding to the luminescent area, has a thickness substantially the same as the second portion of the auxiliary black matrix, positioned on the black matrix corresponding to the non-luminescent area.
3. The display device according to claim 1, wherein, The first portion of the auxiliary black matrix, positioned on the black matrix corresponding to the non-luminous area, has a third thickness that is different from the fourth thickness of the second portion of the auxiliary black matrix, positioned on the color filter pattern corresponding to the luminous area.
4. The display device according to claim 1, wherein, The non-luminescent region includes: A first non-luminescent region, in which the embankment and the black matrix are configured to overlap; and In the second non-luminescent region, the embankment is configured to extend further toward the luminescent region compared to the black matrix.
5. The display device according to claim 4, wherein, The first portion of the auxiliary black matrix, which is positioned corresponding to the first non-emitting region, has a third thickness that is different from the fourth thickness of the second portion of the auxiliary black matrix, which is positioned corresponding to the second non-emitting region.
6. The display device according to claim 4, wherein, The first portion of the auxiliary black matrix, positioned on the color filter pattern corresponding to the luminescent area, has a third thickness that is different from the fourth thickness of the second portion of the auxiliary black matrix, positioned corresponding to the second non-luminescent area.
7. The display device according to claim 4, wherein, The first portion of the auxiliary black matrix, positioned corresponding to the second non-emitting region, has a third thickness greater than the fourth thickness of the second portion of the auxiliary black matrix, positioned corresponding to the emitting region on the color filter pattern, and greater than the fifth thickness of the third portion of the auxiliary black matrix, positioned corresponding to the first non-emitting region.
8. The display device according to claim 4, wherein, The first portion of the auxiliary black matrix, positioned corresponding to the first non-emitting region, has a third thickness greater than the fifth thickness of the second portion of the auxiliary black matrix, positioned corresponding to the second non-emitting region, and wherein the fifth thickness is greater than the fourth thickness of the third portion of the auxiliary black matrix, positioned corresponding to the emitting region.
9. The display device according to claim 1, wherein, The second thickness gradually decreases from the first portion where the auxiliary black matrix is located in the non-luminous region to the second portion where the auxiliary black matrix is located in the luminous region.
10. The display device according to claim 1, wherein, The first optical density per unit thickness of the auxiliary black matrix is greater than the second optical density per unit thickness of the black matrix.
11. The display device according to claim 1, wherein, The second optical density per unit thickness of the black matrix is greater than the third optical density per unit thickness of the embankment.
12. The display device according to claim 1, wherein, The black matrix includes: A first black matrix, corresponding to the non-light-emitting area, is disposed on the encapsulation layer; and The second black matrix is disposed on the first black matrix corresponding to the non-luminous area.
13. The display device according to claim 12, wherein, The thickness of the first black matrix is equal to or greater than the thickness of the second black matrix.
14. The display device according to claim 12, wherein, The first optical density per unit thickness of the auxiliary black matrix is greater than the second optical density per unit thickness of the first black matrix and the second black matrix.
15. The display device according to claim 12, wherein, The second optical density per unit thickness of the first black matrix and the second black matrix is greater than the third optical density per unit thickness of the embankment.
16. The display device according to claim 1, wherein, The outer region of the embankment that contacts the light-emitting diode extends further toward the light-emitting area compared to the outer region of the black matrix that contacts the color filter pattern.
17. The display device according to claim 1, wherein, The dike layer includes a colorant selected from at least one of black dyes and black pigments.
18. The display device according to claim 1, wherein, The side of the embankment that contacts the light-emitting diode has a cross section that slopes downward toward the light-emitting area.
19. The display device according to claim 1, further comprising: A driving thin-film transistor, wherein the driving thin-film transistor is disposed on the substrate and the driving thin-film transistor is connected to the light-emitting diode; A touch sensor is disposed between the encapsulation layer and the black matrix and the color filter pattern; as well as A cover window is provided on the auxiliary black matrix.
20. The display device according to claim 19, wherein, The driving thin-film transistor includes an oxide semiconductor.
Citation Information
Patent Citations
Free-Standing Film for Anode of Lithium Secondary Battery, and Method for Manufacturing The Same
KR1020250025550A