Unlock instant, AI-driven research and patent intelligence for your innovation.

Nitride based compound semiconductor light emitting element and mfg. method thereof

一种发光元件、化合物的技术，应用在半导体器件、电气元件、电固体器件等方向，能够解决光发层92不能发光、减小发光元件90发光效率、不能稳定地发光等问题，达到高发光可靠性、高发光效率的效果

Inactive Publication Date: 2006-07-05
SHARP KK
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, a problem arises that the light-emitting layer 92 cannot emit light or cannot emit light stably even if the light-emitting layer 92 can emit light.
[0007] Also, about 50% of the light emitted from the light-emitting layer 92 is absorbed by the Si substrate 95, thus causing a problem that the light-emitting efficiency of the nitride-based compound semiconductor light-emitting element 90 may be reduced.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nitride based compound semiconductor light emitting element and mfg. method thereof
  • Nitride based compound semiconductor light emitting element and mfg. method thereof
  • Nitride based compound semiconductor light emitting element and mfg. method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] figure 1 is a front cross-sectional view of a nitride-based compound semiconductor light-emitting element 10 according to Example 1 of the present invention. The nitride-based compound semiconductor light-emitting element 10 includes a laminated body 9 approximately in the shape of a rectangular parallelepiped.

[0044] The laminated body 9 includes: a P-type base electrode (conductive layer) 13 approximately in the shape of a rectangular parallelepiped; a P-type electrode 12 arranged on the P-type base electrode 13; a P-type electrode 12 arranged on the P-type electrode 12. Nitride-based compound semiconductor contact layer 6; a P-type nitride-based compound semiconductor layer 5 arranged on the P-type nitride-based compound semiconductor contact layer 6; a MQW ( Multi-quantum well) light-emitting layer 4; an N-type nitride-based compound semiconductor layer 3 disposed on the MQW light-emitting layer 4; and an aluminum nitride (AlN) buffer layer disposed on the N-type ...

Embodiment 2

[0074] image 3 is a front cross-sectional view of a nitride-based compound semiconductor light-emitting element 20 according to Example 2 of the present invention. exist image 3 in, with reference to figure 1 The same elements of the described nitride-based compound semiconductor light-emitting element 10 of Example 1 are denoted by the same reference numerals, and their descriptions will be omitted. The difference between the nitride-based compound semiconductor light-emitting element 20 according to Embodiment 2 and the nitride-based compound semiconductor light-emitting element 10 according to Embodiment 1 is that a nitride-based compound semiconductor layer 3A containing N-type indium (In) is further provided on N type nitride-based compound semiconductor layer 3.

[0075] The nitride-based compound semiconductor light-emitting element 20 includes a laminated body 9A substantially in the shape of a rectangular parallelepiped.

[0076] The laminate 9A includes: a P-t...

Embodiment 3

[0097] Figure 5 is a front sectional view of a nitride-based compound semiconductor light-emitting element 30 according to Example 3 of the present invention. exist Figure 5 in, with reference to figure 1 The same elements as described in the nitride-based compound semiconductor light-emitting element 10 according to Embodiment 1 are denoted by the same reference numerals, and their descriptions will be omitted. In the nitride-based compound semiconductor light-emitting element 30 according to Embodiment 3, an AlGaN buffer layer 2B is provided instead of the AlN buffer layer 2, grooves 11A and 11B are formed in the AlGaN buffer layer 2B instead of the groove 11, and formed N-type oxide semiconductor 7A is formed instead of N-type transparent electrode 7 . The nitride-based compound semiconductor light-emitting element 30 includes a laminated body 9B substantially in the shape of a rectangular parallelepiped.

[0098] The laminate 9B includes: a P-type base electrode 13 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A nitride-based compound semiconductor light-emitting element of the present invention includes: a P-type electrode; a P-type nitride-based compound semiconductor layer disposed on the P-type electrode; a light-emitting layer disposed on the P-type nitride-based compound semiconductor layer and emitting light; a nitride-based compound semiconductor layer disposed on the light-emitting layer and transmitting light emitted by the light-emitting layer therethrough; a buffer layer disposed on the nitride-based compound semiconductor layer and transmitting the light therethrough, wherein the buffer layer is made of a nitride-based compound semiconductor material and a trench is formed in the buffer layer so as to expose portions of the nitride-based compound semiconductor layer; and an N-type electrode disposed so as to cover the trench and electrically connected to the nitride-based compound semiconductor layer.

Description

technical field [0001] The invention relates to a semiconductor light-emitting element, in particular to a nitride-based compound semiconductor light-emitting element capable of emitting light in a wavelength range from a blue light region to an ultraviolet light region. The present invention also relates to a method of manufacturing such a semiconductor light emitting element. Background technique [0002] It is known that nitride-based compounds can be used for semiconductor light emitting elements capable of emitting light having wavelengths ranging from the blue region to the ultraviolet region. For example, Japanese Patent Laid-Open No. 11-177142 discloses a structure of a conventional nitride-based compound semiconductor light-emitting element using a nitride-based compound. [0003] Figure 9 is a front sectional view of a conventional nitride-based compound semiconductor light emitting element 90 . This nitride-based compound semiconductor light-emitting element 90...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/42H01L33/06H01L33/12H01L33/32H01L33/38H01L33/62
CPCH01L24/05H01L2224/48463H01L33/32H01L33/387H01L33/42H01L2933/0016H01L2224/02166H01L2224/04042H01L2224/05552H01L2224/05556H01L2224/45144H01L2924/00
Inventor 幡俊雄笔田麻佑子
Owner SHARP KK