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Method for preparing p type ZnO crystal film

A p-type, crystal technology, used in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., can solve the problem of low industrial value, achieve good uniformity, repeatability and stability, and crystal quality. high effect

Inactive Publication Date: 2006-07-19
ZHEJIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The specific zinc oxide thin film preparation methods used are limited to methods such as molecular beam epitaxy, laser pulse deposition, magnetron sputtering and diffusion, and these methods have low industrial application value due to the quality of materials, preparation costs and other reasons

Method used

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  • Method for preparing p type ZnO crystal film

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Embodiment Construction

[0012] The present invention is further described below in conjunction with specific examples.

[0013] First put the sapphire substrate on the sample holder 7 of the reaction chamber after surface cleaning, then close each air inlet, and vacuumize to 10 -2 pa, the substrate is heated by the substrate heater 4 so that its temperature reaches 450°C, nitrogen containing high-purity diethylzinc (purity>99.999%), high-purity N 2 O (purity > 99.9%) and NO (purity > 99%) are passed into growth chamber 1 to make diethylzinc, NO and N 2 The molar flow rate of O is 10 μmol / min, 2000 μmol / min and 1000 μmol / min, respectively, and the pressure in the growth chamber is maintained to be controlled at 100 Pa. The reactants react on the substrate surface to obtain a doping concentration of 1.2×10 18 cm -3 , the resistivity is about 10Ω·cm, and the p-type zinc oxide film with good crystal quality.

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Abstract

This invention discloses a method for preparing P type ZnO crystal film including the following steps: A surface washed substrate is put in a metal organic chemical vapor phase deposition growth chamber with 0.01 Pa vacuum degree to be heated to 350-950deg.C then to control the internal pressure in the growth chamber at 0.01-10000Pa and to input pure organic Zn source into the growth chamber by a pure carrier gas and pure N2O and NO as well, with the molar flow of 0.1~1x1000mm mol / min, 1~1x100000mm mol / min and 1~1x100000mm mol / min separately. Sources of Zn, O and N are reacted and grown on the substrate to get a p type ZnO film with the doped consistency of 2.0 x 10 to the power 15cm[-3]--5.0x10 to the power 19cm[-3] and resistivity of 0.1-1x10 to the power 4 ohm.cm.

Description

technical field [0001] The invention relates to a preparation method of a p-type zinc oxide crystal thin film. Specifically, it relates to a method for growing a p-type zinc oxide crystal film by doping nitrogen in real time during metal organic chemical vapor deposition process of zinc oxide crystal film. Background technique [0002] Zinc oxide is an important wide-bandgap semiconductor material with a bandgap of 3.3 eV at room temperature, which is suitable for the manufacture of blue-violet solid-state emitters and detectors. However, in order to realize the application of zinc oxide-based light-emitting devices, it is necessary to grow controllable n-type and p-type zinc oxide crystal films with a certain carrier concentration. At present, research on n-type zinc oxide crystal thin films has been relatively sufficient, and real-time, concentration-controllable growth of low-resistance n-type zinc oxide crystal thin films has been achieved. Howe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205C23C16/40
Inventor 叶志镇徐伟中赵炳辉朱丽萍周婷黄靖云
Owner ZHEJIANG UNIV