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Back conductive grid commutation thyrislor and power supply inverter

A reverse conduction, thyristor technology, applied in the field of power electronics, can solve problems such as limiting the power capability of the inverter

Inactive Publication Date: 2006-07-19
ABB (SCHWEIZ) AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The problem in use is that when turned off as a positive voltage (at GOTS and IGCT) a large overvoltage is dropped through the rectifier inductance
Both approaches result in losses that limit the power capability of the inverter

Method used

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  • Back conductive grid commutation thyrislor and power supply inverter
  • Back conductive grid commutation thyrislor and power supply inverter
  • Back conductive grid commutation thyrislor and power supply inverter

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Embodiment Construction

[0019] attached figure 1 A schematic circuit diagram of the power inverter 1 is reflected. The power inverter 1 comprises a bridge circuit 2 (AC bridge circuit) with individual bridge branches 5 on which controllable power semiconductor components are arranged, which is carried out in a suitable manner by a controller not shown control, the AC output terminal 8 of the inverter generates an AC voltage of desired frequency. The input of the bridge circuit 2 draws a DC current from an intermediate circuit with a corresponding intermediate circuit inductance 3 , 4 . A plurality of capacitors 9 are arranged at the AC output in the manner shown.

[0020] According to the invention, reverse-conducting gate rectifier thyristors 6 are now arranged as controllable power semiconductor components on the bridge branch 5, each of which is connected in series with a diode 7 and is formed in such a way that they are in the forward position Avalanche resistant to load. As gate-commutating ...

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Abstract

A current source inverter (1) comprises a bridge circuit (2) having a plurality of bridge paths (5), in each of which a controllable power semiconductor component (6) is arranged. In the case of such an inverter, a loss in performance on account of inductance-dictated overvoltages during the turn-off of the power semiconductor components (6) is avoided by virtue of the fact that the controllable power semiconductor component (6) is avalanche-proof at least under loading in the forward direction.

Description

technical field [0001] The invention relates to the field of power electronics. It relates to reverse conducting GCTs (Gate Rectifier Thyristors) and their use according to the general concept of the invention. Background technique [0002] For applications in power inverters (power inverters), it is known, for example, in US-A-4,545,002 to use reverse-blocking power semiconductor components, such as thyristors, GTOs or IGCTs (integrated gate rectifier Flowtube) (for a description of the function and structure of the IGCT see for example Harold M. Stillman the article "IGCT - Megawatt Power Switch for Medium Voltage" ABB Perspective 3 (1997)). Not only symmetrical components but also series circuits of asymmetrical components and diodes can be used therein. The problem in use is that a large overvoltage is dropped through the rectifier inductance when turned off as a positive voltage (at GOTS and IGCT). However, the commutation inductance can only be influenced to a limit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M7/515
CPCH02M7/515
Inventor A·韦伯
Owner ABB (SCHWEIZ) AG