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Optoacoustic and surface photoroltaic dectecting method by surface electron-phonon interaction

A surface photovoltaic and surface electron technology, which can be used in the measurement of color/spectral properties, material excitation analysis, etc., and can solve problems such as measurement temperature limitations

Inactive Publication Date: 2006-10-25
YANSHAN UNIV
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Problems solved by technology

These detection methods have strict restrictions on the measurement temperature in the detection process, most of the detection is carried out at ultra-low temperature or high temperature

Method used

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  • Optoacoustic and surface photoroltaic dectecting method by surface electron-phonon interaction
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  • Optoacoustic and surface photoroltaic dectecting method by surface electron-phonon interaction

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Embodiment Construction

[0046] Firstly, according to the photovoltaic response signal in the range of photon energy greater than the photoelectric threshold wavelength in the surface photovoltage spectrum, the nature of the band-to-band transition that generates the photovoltaic signal is analyzed. See Nanocrystalline La 0.8 Sr 0.2 FeO 3 The surface photovoltage spectrum of the sample induced by positive and negative electric fields (see Figure 4 with Figure 5 ). When the photon energy is greater than the photoelectric threshold of 2.3eV (that is, the wavelength is less than 540nm), there is a strong signal in the range of 300-400nm, and a shoulder peak response in the range of 400-450nm (see Figure 5 ). The two correspond to two different band-band transitions. When a negative electric field is added, the two photovoltaic signals are significantly enhanced (see Figure 4 ), when a positive electric field is added, the intensity of the photovoltaic signal does not change (see Figure 5 ). ...

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Abstract

The invention utilizes the energy complementary relationship between the photoacoustic effect and the surface photovoltaic effect on the surface of conductors and semiconductor materials, and combines the results obtained from photoacoustic spectroscopy and surface photovoltage spectrum to provide a photoacoustic interaction between electrons and phonons on the surface of conductors and semiconductor materials. with surface photovoltaic probing methods. Using the detection results, it is possible to directly discuss the electron-phonon interactions on the surfaces, subsurfaces, and interfaces of conductors and semiconductor materials, as well as the effective pathways for radiation-free deexcitation processes occurring on surfaces, subsurfaces, and interfaces. The invention has the characteristics of non-contact, non-pretreatment, rapid detection and high sensitivity: its sensitivity can reach 5×10 7 atom / cm 3 , generally several orders of magnitude higher than some standard spectra or energy spectra, such as XPS or Auger electron spectroscopy. The test equipment of the invention is simple and convenient, and the operation can be carried out at room temperature. The photoacoustic signal generated by the exciton pair during the radiation-free deexcitation process can be observed at room temperature. Of particular importance, the invention can provide information on electron-phonon interactions at material surfaces, subsurfaces, and interfaces.

Description

technical field [0001] The invention utilizes the energy complementary relationship between the photoacoustic effect and the surface photovoltaic effect on the surface of conductors and semiconductor materials, and combines the results obtained from photoacoustic spectroscopy and surface photovoltage spectrum to provide a photoacoustic interaction between electrons and phonons on the surface of conductors and semiconductor materials. with surface photovoltaic probing methods. It belongs to the technical field of detection and research of charge transport properties on condensed matter surfaces. Background technique [0002] Lattice distortion around an electron causes an increase in the density of positive charges in its vicinity, and the increased charge density will propagate along the lattice with the vibration of the cation (see Figure 7 ). These distorted lattices can affect the movement of other electrons within a certain range, and these moving electrons interact wi...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/62G01N21/31
Inventor 李葵英
Owner YANSHAN UNIV