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Method for making large relief deep micro lens array

A technology of microlens array and manufacturing method, which is applied to the photoplate process of lens and patterned surface, optics, etc., can solve the problems that continuous embossed microlens array cannot be used, and achieve the requirements of improved precision, simple process and control precision not high effect

Inactive Publication Date: 2006-11-29
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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AI Technical Summary

Problems solved by technology

However, this method still has certain defects: due to the nonlinearity of the resist material and the nonlinearity of exposure and etching, the designed exposure distribution cannot form the required surface distribution on the resist with high fidelity.
Therefore, this method can only be used to make a continuous surface microlens array with a small relief depth (the etching depth is up to 4 microns), and cannot be used to make a continuous relief microlens array with a larger depth.

Method used

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  • Method for making large relief deep micro lens array
  • Method for making large relief deep micro lens array
  • Method for making large relief deep micro lens array

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] Embodiment 1 of the present invention is a continuous deep buoy with a diameter of φ=500 μm and an etching depth of h=134 μm.

[0019] Engraving microlens array, using positive photoresist as photolithography material, its production process is as follows:

[0020] ① First, measure the lithography threshold of the pre-baked positive photoresist, and set: the measurement result is Q.

[0021] ②A mask plate designed for microlens array etching, the unit graphic curve function of the mask plate is:

[0022] g(x)=c×Q×e α×f(x)

[0023] α is the photoresist absorption coefficient, c is an arbitrary constant, Q is the lithography threshold, and f(x) is the relief vector corresponding to the coordinate x point.

[0024] ③Using positive photoresist as the photolithography material, different etching depths require different exposures to the photoresist, but the relative distribution of exposure between each point is the same, which is completely determined ...

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Abstract

The invention is micro-lens array manufacturing method of big relief, it uses corrosion depth and the bore to calculate the section plan of micro-lens array relief, and optimizes the mask unit graph according to the relation between depth and exposure amount, carries on exposure, imaging, filming to the optimized mask graph and accomplishes the product.

Description

technical field [0001] The present invention relates to a manufacturing method of a microlens array, which belongs to the improvement of the existing continuous embossed microlens array manufacturing method-moving mask method. Background technique [0002] The fabrication method of continuous relief microlens array has been a research hotspot all the time. The rotophotographing method published in "Physics" magazine, Volume 21, Issue 4, Page 197, published in 1992, discussed this, but due to its defects, it is difficult to make valuable devices. Thereafter, the inventor has invented a moving mask method that can produce practical devices (disclosed in "Optoelectronic Engineering" volume 27, No. 5, page 19, published in October, 2000), the method is mainly by moving the mask during the exposure process. The mold is used to expose the surface of the photoresist in proportion to the mask pattern, and then go through procedures such as developing and hardening to obtain the rel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B3/00G03F7/00
Inventor 董小春杜春雷
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI