Self glow plasma based ion infusion or infusion and deposition device

Abstract

A self-glowing plasma base ion implantation or implantation and deposition equipment for material surface modification is provided. The equipment comprises: an implantation element vaporization system, an implantation element introducing system, an ionization and implantation or implantation and deposition system, and a vacuum system, wherein the implantation element vaporization system communicates with the implantation element introducing system, the implantation element introducing system also communicates with the ionization and implantation or implantation and deposition system, and the ionization and implantation or implantation and deposition system is placed in the vacuum system. In the invention, the whole implantation process is stable, the pollution for the vacuum system is reduced. And the implantation efficiency or the implantation and deposition efficiency is improved by using hollow anode and large-area cathode technology.

Description

technical field [0001] The invention relates to an implantation or implantation and deposition device used in the technical field of materials, in particular to a self-glow plasma-based ion implantation or implantation and deposition device. Background technique [0002] Professor Conrad of the United States proposed the method of plasma-based ion implantation or implantation and deposition (all-round ion implantation), which places the workpiece in the plasma and can modify the surface of large-sized, irregular and complex-shaped workpieces. [0003] Found through literature search, Conrad et al. applied for a U.S. patent, patent number: 4764394, patent name: plasma source ion implantation method and device (Method and apparatus for plasma source ionimplantation), this patented technology is: put the object in a vacuum container , and then use different ion sources to generate plasma: such as hot filament electronic excitation, radio frequency excitation, microwave excitati...

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a self-glow plasma-based ion implantation or implantation and deposition device for the above-mentioned deficiencies and defects in the background technology, so that it can overcome the inability of the omnidirectional ion implantation or implantation and deposition method and device Disadvantages of effective plasmaization and implantation of solid materials with low conductivity such as sulfur and phosphorus, and some conductive materials with low melting point or high vapor pressure such as sodium and calcium

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