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Preparation method of nano-gap electrode

A nano-gap electrode and electrode technology, which is applied in the direction of nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of thick tin colloid sensitized layer, no selectivity, complicated process, etc., and achieve mass production and manufacturing The effect of low cost and simple operation

Inactive Publication Date: 2007-05-09
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The selective electroless plating method is a very novel method with the potential for mass production to prepare nano-gap electrodes, but the prior art (ZL01113578.6) adopts the traditional stannous chloride sensitization-palladium chloride activated electroless plating In the pre-treatment process, the adsorption of the palladium catalyst is not selective, and it is necessary to assemble a photosensitive thin layer on the surface of the silicon-based material, combined with exposure and development to modulate the initiator pattern that only appears on the surface of the electrode material, which involves cumbersome steps and a relatively complicated process. The tin colloidal sensitization layer is thicker and introduces low melting point tin impurities into the prepared nanogap electrode

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Embodiment 1: The gold electrode structure with micron or submicron gaps processed on silicon-based materials by ordinary photolithography is used as a prototype electrode. After the surface is cleaned, the bifunctional molecular mercapto compound HS-R-Y (such as mercaptoethylamine or 1,6-hexanedithiol, etc.) in the ethanol solution for molecular assembly; put the gold electrode assembled with bifunctional molecules into the solution of palladium ion or platinum ion or silver ion to adsorb ion-based catalyst nanoparticles; then place The gold electrode adsorbed with the catalyst is respectively placed in palladium, platinum, gold, silver, copper, nickel, cobalt or alloy plating solution for electroless plating, and palladium, platinum, gold, silver, copper, magnetic nickel, magnetic cobalt and its Nanogap electrodes of alloy materials.

Embodiment 2

[0017] Example 2: A gold electrode structure with a micron or submicron gap processed on a silicon-based material by an ordinary photolithography process is used as a prototype electrode. After the surface is cleaned, the bifunctional molecule mercaptoethylamine or 1,6-hexanedi The molecular assembly is carried out in the ethanol solution of thiol; the electrode assembled with bifunctional molecules is put into the colloidal silver solution to absorb silver nanoparticles; and then electroless silver plating is carried out to obtain the silver nano-gap electrode. Electroless nickel plating is performed on the gold electrode adsorbed with silver nanoparticles to obtain a magnetic nickel nano-gap electrode.

Embodiment 3

[0018] Example 3: A gold electrode structure with a micron or submicron gap processed on a silicon-based material by an ordinary photolithography process is used as a prototype electrode. After the surface is cleaned, the bifunctional molecule mercaptoethylamine or 1,6-hexanedi The molecular assembly is carried out in the ethanol solution of thiol; the electrode assembled with the bifunctional molecule is put into the colloidal gold solution to absorb gold nanoparticles; and then electroless gold plating is carried out to obtain the gold nanogap electrode.

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PUM

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Abstract

The invention is manufacturing method for nanometer gap electrode which is selective chemical depositing method based on molecular assembling technology. The manufacturing method is: at first, uses traditional photoetching process to produce micrometer or submicro gap antitype electrode; uses molecular assembling technology to acquire single molecular film of 'X-R-Y' on the surface of the electrode; then uses active end base Y opposing to the external surface of the single molecular to absorb chemical plate inducer chemically; then induces the selective chemical deposition on the electrode surface, produces the gap of the antitype electrode from micrometer or the submicro to the nanometer through the self catalyst extension through the metal layer.

Description

technical field [0001] The invention is a selective chemical deposition method for preparing nano-gap electrodes based on molecular assembly technology, and belongs to the technical field of processing nanostructures and nanoelectronic devices. Background technique [0002] The preparation of nano-gap electrodes is of great significance not only for the basic research of nanoelectronics and nanobiomedicine, but also for the manufacture and application research of nanoelectronic devices and biomedical detection devices. The limit of the electrode gap processed by traditional photolithography technology can only be at the submicron level, but cannot reach the nanometer level. In recent years, many methods for preparing nano-gap electrodes have emerged, such as electron beam etching, molecular beam epitaxy, scanning probe nano-etching, electroplating, electron migration, contact fusing, and carbon nanotube masking. method, carbon nanorod method, etc. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/44B82B3/00C23C18/08
Inventor 徐丽娜顾宁黄岚王孟周凯常
Owner SOUTHEAST UNIV