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Method for mfg. semiconductor device

A manufacturing method and semiconductor technology, which are applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, and semiconductor/solid-state device components, etc., can solve problems such as inability to obtain finishing accuracy

Inactive Publication Date: 2003-07-02
MITSUBISHI ELECTRIC CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, if before the etching of the passivation film 160, specifically, Figure 16 The imidization of the polyimide film 150 is performed by heat treatment before the etching process of the passivation film 140 shown in , and the passivation film 160 is etched using the polyimide film 150 as a mask etch, sometimes the desired etching finishing accuracy cannot be obtained

Method used

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  • Method for mfg. semiconductor device
  • Method for mfg. semiconductor device
  • Method for mfg. semiconductor device

Examples

Experimental program
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Embodiment 1

[0030] Figure 1~6 is a cross-sectional view showing the manufacturing process of the semiconductor device according to Embodiment 1 of the present invention, in which Figure 3-6 A step of forming a predetermined pattern on the passivation film 7 described later is shown. First, if figure 1 As shown in , a passivation film 6 having a two-layer structure composed of a silicon oxide film 3 and a silicon nitride film 4 is formed on a semiconductor substrate 1 that has been subjected to a wiring process. Specifically, a silicon oxide film 3 is formed on the semiconductor substrate 1 so as to cover the wiring 2 made of, for example, aluminum formed on the semiconductor substrate 1, and a silicon nitride film is formed on the silicon oxide film 3. 4. Then, if figure 2 As shown in , a polyimide film 5 as a buffer coating film is formed on the passivation film 6, specifically, on the silicon nitride film 4. Here, like the passivation film 6, since the polyimide film 5 as a buf...

Embodiment 2

[0038] Figure 7-12 It is a sectional view showing the manufacturing process of the semiconductor device according to the second embodiment of the present invention. First, if Figure 7 As shown in , a one-layer passivation film 14 that is a silicon nitride film is formed on the semiconductor substrate 10 that has been subjected to the wiring process. Specifically, an interlayer insulating film 13 that is a silicon oxide film is formed on the semiconductor substrate 10, and wirings 12a, 12b made of, for example, aluminum are formed on the interlayer insulating film 13 at a predetermined distance. Then, a passivation film 14 is formed on the interlayer insulating film 13 so as to cover the wirings 12a and 12b. In addition, if Figure 7 As shown in , a fuse 17 made of, for example, aluminum is formed in the interlayer insulating film 13 .

[0039] Secondly, if Figure 8 As shown in , a polyimide film 15 as a buffer coating film is formed on the passivation film 14 . Here, ...

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Abstract

To provide a method for manufacturing a semiconductor device by which the separation of a polyimide film from a film which is subjected to isotropic etching is prevented when the polyimide film is turned into imide by a heat treatment and the separation of deposits adhering to the side walls of the films by anisotropic etching is prevented. A silicon nitride film 4 is subjected to isotropic etching by using a polyimide film 5 on which a specified pattern is formed as a mask. Then before anisotropic etching of a silicon oxide film 3, the polyimide film 5 is turned into imide by a heat treatment. At this time, since no deposits produced by dry etching exhibiting anisotropy adhere to the side walls of the films, the polyimide film 5 is never separated from the silicon nitride film 4 when the polyimide film 5 is turned into imide by a heat treatment. Also, deposits are never separated after adhering to the side walls of the films.

Description

(1) Technical field [0001] The present invention relates to a method of manufacturing a semiconductor device in which an anisotropically etched film, an isotropically etched film, and a polyimide film are laminated in the following order. (2) Background technology [0002] Figures 13 to 18 It is a cross-sectional view showing a manufacturing process of a conventional semiconductor device. like Figure 13 As shown in , a passivation film 160 composed of a silicon oxide film 130 and a silicon nitride film 140 is formed on the semiconductor substrate 110 that has been subjected to the wiring process. Specifically, a silicon oxide film 130 is formed on the semiconductor substrate 110 so as to cover the wiring 120 formed on the semiconductor substrate 110 , and a silicon nitride film 140 is formed on the silicon oxide film 130 . Then, if Figure 14 As shown in , a polyimide film 150 as a buffer coating film is formed on the passivation film 160 , specifically, on the silicon ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/302H01L21/311H01L21/768H01L21/82H01L21/822H01L23/522H01L27/04
CPCH01L24/05H01L21/31144H01L21/76802H01L21/76832H01L2924/351H01L21/76804H01L23/53295H01L2924/00H01L21/311
Inventor 上浦有纪飞松博小田耕治泽田真人芝田耕治川田宏幸
Owner MITSUBISHI ELECTRIC CORP