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Method for producing photo mask and method for producing semiconductor device using said photomask

A manufacturing method and photomask technology, which are applied in semiconductor/solid-state device manufacturing, photolithographic process exposure devices, and cigar manufacturing, and can solve problems such as the decline in the yield of good products

Inactive Publication Date: 2003-09-10
키오시아가부시키가이샤
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the high precision of photomask manufacturing technology is advancing, the yield rate of good products is declining due to the stricter dimensional accuracy required for photomasks

Method used

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  • Method for producing photo mask and method for producing semiconductor device using said photomask
  • Method for producing photo mask and method for producing semiconductor device using said photomask
  • Method for producing photo mask and method for producing semiconductor device using said photomask

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Embodiment Construction

[0022] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In this description, common reference signs are assigned to common parts throughout the drawings.

[0023] FIG. 1 is a flowchart showing a method of manufacturing a photomask according to an embodiment of the present invention. This first embodiment is an example in which the present invention is applied to a halftone type phase shift mask (hereinafter referred to as a HT type mask) as a photomask. However, the present invention is not limited to the application to the HT-type mask, and is applicable to phase shift masks other than the HT-type mask, and is of course applicable to photomasks other than the phase-shift mask.

[0024] As shown in FIG. 1 , a mask pattern such as a semiconductor device pattern is formed on a mask blank (ST. 1 ).

[0025] In this example, an electron beam drawing device is used, for example, on a sensitive material such as a resist on a bla...

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Abstract

A method of manufacturing a photomask includes determining dimensions of a pattern in a photomask, determining an exposure latitude on the basis of the dimensions of the mask, and judging if the photomask is defective or non-defective on the basis of whether or not the exposure latitude falls within a prescribed exposure latitude. The pattern in the photomask includes dimensions of critical pattern portions in which an exposure latitude is low.

Description

technical field [0001] The present invention relates to a method of manufacturing a photomask and a method of manufacturing a semiconductor device using the photomask. Background technique [0002] In the manufacturing process of a semiconductor device, there is a pattern forming process for forming various patterns on a semiconductor wafer, that is, a so-called photolithography process. A photomask is used in the photolithography process. [0003] In recent years, the dimensional accuracy required for photomasks has become increasingly strict. For example, the dimensional uniformity in the photomask plane must be 10 nm or less. In the manufacturing process of photomasks, there are many items for judging whether it is a good product or a defective product. Conventionally, if one of these items did not meet the specifications, it was determined as a defective product, that is, it was rejected. [0004] FIG. 8 shows typical items and examples of specification values ​​of spe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/32G03F1/36G03F1/68G03F7/20H01L21/027
CPCG03F1/84G03F7/70625G03F7/705A24B15/16A24B15/28A24D1/18
Inventor 野嵨茂树池永修
Owner 키오시아가부시키가이샤