Forming method of ZnO film and ZnO semiconductor layer, semiconductor element and manufacturing method thereof
A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, chemical instruments and methods, etc., can solve the problems of increased number of manufacturing processes, increased cost of materials, increased cost of electronic equipment, etc.
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Embodiment approach 1
[0037] figure 1 It is a structural cross-sectional view for explaining the method of forming the ZnO semiconductor layer according to Embodiment 1 of the present invention. refer to figure 1 , 1 is a substrate, glass substrates, sapphire substrates, crystal substrates, silicon substrates, fused silica substrates, etc. can be used, but are not limited to these. 2 is a ZnO buffer layer, and 3 is a ZnO semiconductor layer. In this embodiment, the ZnO buffer layer 2 is formed by the sputtering method under the condition of a large oxygen flow ratio, and the ZnO semiconductor layer 3 is formed by the sputtering method under the condition of a small oxygen flow ratio.
[0038] Here, the influence of the oxygen flow ratio in the sputtering gas on the crystallinity of the ZnO film will be described in detail below.
[0039] figure 2 , image 3 , Figure 4 It is a characteristic diagram showing the relationship between the conductivity and the oxygen flow ratio of ZnO films with...
Embodiment 1
[0055] As Example 1, a ZnO buffer layer 2 and a ZnO semiconductor layer 3 were formed on a glass substrate using the conditions shown in Table 3 by a sputtering method.
[0056] Substrate temperature
(℃)
RF power
(W)
pressure
(Pa)
Ar flow
(sccm)
o 2 flow
(sccm)
film thickness
(nm)
The buffer layer
300
100
0.6
0～15
0～15
500 or 800
semiconductor layer
300
100
0.6
15
0
200
[0057] In the same sputtering chamber, the temperature of the substrate was fixed at 300° C., the sputtering gas was changed without stopping the discharge, and the ZnO buffer layer 2 and the ZnO semiconductor layer 3 were continuously formed. In addition, when forming the ZnO buffer layer 2, Ar gas and O 2 Gas mixture, and fixed the total flow of sputtering gas at 15sccm, changing the oxygen flow ratio, respectively, 25%, 50%, 100%, while changing the film thickness, respectively, 500nm, ...
Embodiment 2
[0068] Next, as Example 2, using the conditions shown in Table 5, a ZnO buffer layer 2 and a ZnO semiconductor layer 3 were formed on a glass substrate 1 by a sputtering method, and the obtained laminated film was obtained by Hall effect measurement. mobility and carrier density.
[0069] Substrate temperature
(℃)
RF power
(W)
Pressure (Pa)
Ar flow
(sccm)
o 2 flow
(sccm
)
Film thickness (nm)
The buffer layer
300
100
0.6
0
15
100～2000
semiconductor layer
300
100
0.6
15
0
200
[0070]Compared with embodiment 1, embodiment 2 is different in that the oxygen flow ratio in the sputtering gas when forming the ZnO buffer layer 2 is fixed as 100%, and the film thickness of the ZnO buffer layer 2 is changed to make it vary within In 100nm ~ 2000nm. exist Figure 17 Table shows the relationship between the mobility of the obtained laminated film of...
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