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Semiconductor device

A technology for semiconductors and components, applied in the field of light-emitting components, can solve the problem of ineffective light emission, and achieve the effect of improving light utilization efficiency

Inactive Publication Date: 2004-03-03
NICHIA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, since gold has the property of absorbing short-wavelength light shorter than 550nm, when gold is used as the p-electrode material, the emitted light will be absorbed at the bottom of the p-electrode, so that the light emitted inside the element cannot be effectively released to the outside

Method used

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  • Semiconductor device
  • Semiconductor device
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0093]In this embodiment, an n-type conductive nitride semiconductor layer 102 (n-type conductive semiconductor layer), an active layer 103, and a p-type conductive nitride semiconductor layer 104 (p-type conductive semiconductor layer) are laminated on a substrate 101 such as sapphire. layer) structure. Such as figure 1 (stereo view) and figure 2 As shown in (plan view from above), in this semiconductor element, p-type conductivity nitride semiconductor layer 104, active layer 103, and part of n-type conductivity nitride semiconductor layer 102 are removed in specific regions, and the n-type conductivity The surface for forming electrodes is exposed on the nitride semiconductor layer 102 .

[0094] If the outer shape of the surface of the p-type conductivity nitride semiconductor layer 104 of the semiconductor element is taken, the entire surface of the exposed n-type conductivity nitride semiconductor layer 102 is coated with a resist, and the entire surface is formed by...

Embodiment 2

[0102] In this embodiment, an n-type conductive nitride semiconductor layer 102 (n-type conductive semiconductor layer), an active layer 103, and a p-type conductive nitride semiconductor layer 104 (p-type conductive semiconductor layer) are stacked on a substrate 101 such as sapphire. ) structure. Such as image 3 As shown, the semiconductor element removes the p-type conductivity nitride semiconductor layer 104, the active layer 103 and a part of the n-type conductivity nitride semiconductor layer 102 in a specific area, and the n-type conductivity nitride semiconductor layer 102 Exposing the surface for forming electrodes.

[0103] Next, a resist is applied to the entire surface of the p-type conductive nitride semiconductor layer 104 and the n-type conductive nitride semiconductor layer 102 other than the second electrode formation portion, and the second electrode 2 is formed by sputtering. The second electrode 2 is formed by removing the resist. At this time, the seco...

Embodiment 3

[0108] In the light-emitting element of Example 1, such as Figure 4 As shown, between the first electrode 1 and the second electrode 2, the first electrode has a part width of 0.3 μm and a length of 0.8 μm extending toward the outside of the surface of the p-type conductive nitride semiconductor layer, and the conduction of the second electrode is provided. Part 1a. At this time, the conductive portion 1 a of the first electrode 1 is formed so that a part of the tip (for example, a width of 0.3 μm and a length of 0.3 μm) covers the upper portion of the second electrode 2 . When the light-emitting element is connected to the first electrode 1 and the second electrode 2 as the positive pole, and the n-side electrode 3 as the negative pole, and the electrodes are applied to make it emit light, the light extraction efficiency is about the same as that of Example 1, and the observation is roughly the same. to glowing spots.

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Abstract

In a semiconductor device wherein at least a GaN system semiconductor having n-conductivity type and a GaN system semiconductor having p-conductivity type are layered on a substrate, and electrodes are formed on both surfaces of the GaN system semiconductor layer having n-conductivity type and the GaN system semiconductor layer having p-conductivity type; and a first electrode including at least silver and a second electrode excluding silver are formed on the surface of the GaN system semiconductor layer having p-conductivity type, respectively, and the second electrode surrounds the periphery of the first electrode. In addition, the first electrode has an opening at which the GaN system semiconductor layer having p-conductivity type is exposed, inside from the outline of the first electrode. According to such a structure, it is possible to realize the device having high luminous efficiency for usage and high reliability.

Description

technical field [0001] The invention relates to a semiconductor element formed with a pair of positive and negative electrodes to form a light-emitting element or a photosensitive element, in particular to a semiconductor element made of Al x In y Ga 1-x-y A light-emitting element composed of N (0≤x, 0≤y, x+y<11). Background technique [0002] Nowadays, in our daily life, signal lights, flight arrivals and departures display boards at stations or airports, large displays installed on the outer walls of buildings, and backlights for mobile phones, etc., can be said to have no place where light-emitting elements cannot be seen. In this way, semiconductor-stacked light-emitting elements or photosensitive elements using light-emitting elements have gradually become indispensable items, and therefore there is a need to continuously improve the characteristics of the above-mentioned elements. [0003] Among them, blue light-emitting elements were developed later than red and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/30H01L33/38H01L33/42
CPCH01L33/32H01L33/387H01L33/38H01L33/40
Inventor 山田元量园部真也佐野雅彦
Owner NICHIA CORP