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Semiconductor hall sensor

A Hall sensor and semiconductor technology, applied in Hall effect devices, electric solid devices, instruments, etc., can solve the problems of reducing unbalanced voltage and poor electrostatic withstand voltage

Inactive Publication Date: 2004-09-15
ASAHI KASEI ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, it cannot actually be said to be a decisive method for reducing the unbalanced voltage
[0012] One of the problems with semiconductor Hall sensors such as GaAs is that it has poor electrostatic withstand voltage compared with integrated circuits (ICs) formed of Si, etc.

Method used

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  • Semiconductor hall sensor
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  • Semiconductor hall sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] image 3 It is a figure which shows an example of the pattern of the semiconductor Hall sensor of this invention. The pattern 1 of this semiconductor Hall sensor is also cross-shaped, so it has four inner corners 2a, but unlike the pattern of the conventional semiconductor Hall sensor shown in FIG. 2, these inner corners are not right angles, and cutouts are formed (cutting part). In this way, since the inner corners are not considered to be right angles, in the pattern of the semiconductor Hall sensor of the present invention, the electric field intensity at the inner corners can be reduced.

[0051] Here, the notch is cut into a square with respect to the inner corners, and a cross-shaped pattern with a vertical and horizontal dimension L of 140 μm and a width of 70 μm becomes a square with a side length of 70 μm. The shape of the notch portion may be any cuttable shape such as a polygon other than a square, a circle, an ellipse, or the like in addition to a square....

Embodiment 2

[0059] Figure 9 and Figure 10 It is a figure showing another example of the pattern of the semiconductor Hall sensor of this invention. As another example of the pattern of the semiconductor Hall sensor that reduces the unbalanced voltage and further improves the electrostatic withstand voltage, that is, methods other than (Example 1), such as Figure 9 and Figure 10 As shown, it is considered to provide notches (4a, 5a) at the inner corners of the cross patterns where the input-output patterns 41, 51 intersect with acute angles or circular arcs. The same effect was found by making the incision part the same shape and size as (Example 1).

Embodiment 3

[0061] A trial production of a semiconductor Hall sensor in which notches are provided in the corners of the magnetic sensitive portion pattern has actually been carried out. L and W of the pattern of the semiconductor Hall sensor are 140 μm and 70 μm, respectively. The shape of the cutout is image 3 , Figure 5 , Figure 6 , Figure 7 Wait for four. The size of the notch is 5 μm to 35 μm. In addition, a method of changing L / W, which is a conventional method of reducing unbalanced voltage, is compared. At this time, the semiconductor Hall sensor pattern W was fixed at 70 μm, and L was varied in the range of 132 to 280 μm, and a trial production was performed.

[0062] The results are described below. The resistance change rate, the standard deviation change rate of the unbalanced voltage, and the output voltage change rate were calculated based on the values ​​of the semiconductor Hall sensor pattern with L and W of 140 μm and 70 μm respectively and no notch. Of cours...

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Abstract

A semiconductor Hall sensor can reduce measuring error due to an unbalanced voltage by decreasing the unbalanced voltage, and improve resistance to electrostatic by suppressing maximum electric field in the sensor. A cross-shaped pattern of the semiconductor Hall sensor includes cutouts at its concave corners. Among the four concave corners of the cross-shaped pattern, consecutive two or four concave corners are provided with the cutouts. Besides, among the four concave corners of the cross-shaped patterns, the consecutive two or four concave corners have an acute angle at the intersection of the input terminal side pattern and output terminal side pattern. The semiconductor Hall sensor becomes insensitive to defects or unbalance of its pattern, thereby being able to reduce the unbalanced voltage as compared with a conventional cross-shaped pattern of the semiconductor Hall sensor.

Description

technical field [0001] The present invention relates to a semiconductor Hall sensor, more specifically, to a pattern shape of the semiconductor Hall sensor. Background technique [0002] Conventionally, semiconductor Hall sensors have been widely used as rotational position detection sensors, potentiometers, and gear sensors for drive motors such as VTRs, floppy (registered trademark) disks, and CD-ROMs. In addition, as the sensitive film, InSb (indium antimony) having high mobility and good sensitivity or GaAs (gallium arsenide) having a wide band gap and good temperature characteristics is widely used. [0003] This semiconductor Hall sensor is a magnetic sensor having the property of generating a Hall output voltage proportional to the magnetic flux density in the direction perpendicular to the magnetic sensitive surface, so the Hall output voltage should be zero when there is no magnetic field. However, even if the magnetic field does not actually exist, the Hall output...

Claims

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Application Information

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IPC IPC(8): G01R33/07
CPCG01R33/07H10N52/101H10N52/00
Inventor 高冢俊德
Owner ASAHI KASEI ELECTRONICS CO LTD