Anodizing processing device
A treatment equipment and anodization technology, which is applied in the direction of anodization, electrodes, electric solid devices, etc., can solve the problems of solar cell equipment yield and characteristics reduction, thin film difficult to handle, etc.
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Embodiment 1
[0075] As an embodiment according to the present invention, a method for producing a semiconductor component is described with reference to FIGS. 1A to 1H.
[0076] In the surface portion or surface layer of the first substrate crystal substrate as exemplified by the single crystal silicon wafer 101, impurities are introduced by thermal diffusion or ion implantation, or are mixed when the wafer is produced, at least forming a p + type (or n + type) layer 102 (FIG. 1A).
[0077] Next, the wafer surface is anodized on the side where impurities are introduced, such as aqueous HF (hydrogen fluoride) solvent, to make the surface and the vicinity porous, forming a porous layer 103 [FIG. 1B].
[0078] The porous layer 103 is annealed with hydrogen to smooth its surface, and then grown by CVD (Chemical Vapor Deposition) or liquid phase epitaxy to grow a single crystal silicon semiconductor layer 104 (FIG. 1C).
[0079] During anodization to generate porosity, the magnitude level of ...
Embodiment 2
[0099] As another embodiment according to the present invention, a method of producing a semiconductor part using electron polishing will be described with reference to FIGS. 10A to 10H.
[0100] As shown in FIG. 10A, in the surface portion (surface layer) of the single crystal silicon substrate 1101, B (boron) is introduced by thermal diffusion or ion implantation or mixed when the substrate (wafer) is produced. The surface layer (1202) of the monocrystalline silicon substrate has been anodized with, for example, HF aqueous solution to become p + type, make p + The pores of the patterned surface layer 1202 form a porous layer 1103 (FIG. 10B). Here the layer can be made porous so that the anodization is first carried out at a low current level and after a certain period of time a sudden increase to a high current is carried out for a short time. This makes it possible to provide in advance a porous layer having a density variation of the internal structure, so that the silic...
Embodiment 3
[0109] Still according to another embodiment of the present invention, a method for producing a thin film crystalline solar cell using electropolishing is described with reference to FIGS. 11A to 11I .
[0110] As shown in Fig. 11A, first, in the surface layer of the single crystal silicon substrate 1201, when the substrate (wafer) is produced, B (boron) is introduced by thermal diffusion or ion implantation or mixed. The surface layer (1202) of the monocrystalline silicon substrate has been anodized with, for example, HF aqueous solution to become p + type, make p + The pores of the patterned surface layer 1202 form a porous layer 1203 (FIG. 11B). Here the layer can be made porous so that the anodization is first carried out at a low current level and after a certain period of time a sudden increase to a high current is carried out for a short time. This makes it possible to provide in advance a porous layer having a density variation of the internal structure, so that the ...
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Abstract
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