Unlock instant, AI-driven research and patent intelligence for your innovation.

Liquid crystal display possessing capacitance compensation structure

A liquid crystal display, capacitance compensation technology, applied in instruments, circuits, transistors, etc., can solve problems such as uneven picture

Active Publication Date: 2004-12-22
AU OPTRONICS CORP
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When controlling the thin film transistor T of the liquid crystal unit 36 ​​to turn off, the gate-drain parasitic capacitance C connected in series gd The voltage of the liquid crystal unit 36 ​​will be reduced, so that when the liquid crystal display displays images, the resulting picture will be partially or completely uneven (mura)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Liquid crystal display possessing capacitance compensation structure
  • Liquid crystal display possessing capacitance compensation structure
  • Liquid crystal display possessing capacitance compensation structure

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0041] Figure 3A and Figure 3B is a first embodiment of the present invention with a C gd Top view of the capacitive compensation structure, where, Figure 3AMake schematic diagrams for M1 and M2 without any overlapping bias, Figure 3B Make a schematic diagram of the overlap bias occurring for M1 and M2. Figure 4 for Figure 3B Sectional view of the 4-4' tangent. Figure 5 is the equivalent circuit diagram corresponding to Figs. 3A and 3B.

[0042] In this embodiment, for compensating the gate-drain parasitic capacitance (C gd ) compensation structure includes 102a and 102b. Wherein, the compensation structure 102a extends from an end of the gate G far away from the gate line 102 (at 120) to an end at which the drain D overlaps with the pixel electrode 114 (at 124), and is connected to this end (at 124). The drain D is partially overlapped. The compensation structure 102 b extends from the gate line 102 to an end (at 124 ) where the drain D overlaps with the pixel...

no. 2 example

[0046] Figure 6 is a second embodiment of the present invention with a C gd The top view of the capacitance compensation structure, in which the dotted line indicates the situation without overlapping deviation in the fabrication of M1 and M2, and the solid line indicates the situation after the fabrication of M1 and M2 with overlapping deviation.

[0047] In this embodiment, for compensating the gate-drain parasitic capacitance (C gd ) is 102a, which extends from the end of the gate G away from the gate line 102 (at 120) to the end where the drain D overlaps with the pixel electrode 114 (at 124), and is connected to this end (at 124 at) the drain D partially overlaps. When an overlap deviation occurs, the parasitic capacitance C A terminal deviation, there will be a parasitic capacitance C C end is compensated. In this case, the parasitic capacitance C between the gate-drain gd =C A +C C , the amount of change in parasitic capacitance Δ ...

no. 3 example

[0050] Figure 7 is a third embodiment of the present invention with a C gd The top view of the capacitance compensation structure, in which the dotted line indicates the situation without overlapping deviation in the fabrication of M1 and M2, and the solid line indicates the situation after the fabrication of M1 and M2 with overlapping deviation.

[0051] In this embodiment, for compensating the gate-drain parasitic capacitance (C gd ) is 102b, which extends from the gate line 102 to an end (at 124) where the drain D overlaps with the pixel electrode 114, and partially overlaps with the drain D at this end (at 124). When an overlap deviation occurs, the parasitic capacitance C A terminal deviation, there will be a parasitic capacitance C B end is compensated. In this case, the parasitic capacitance C between the gate-drain gd =C A +C B , the amount of change in parasitic capacitance Δ C 1 + Δ ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention advances a LCD with a capacitance compensating structure, by setting a parasitic capacitance structure coupled with the grid at one end where the drain and pixel electrode are overlapped, compensating the end where the drain and pixel electrode when the parasitic capacitance changes, thus maintaining the total grid-drain parasitic capacitance.

Description

technical field [0001] The present invention relates to a liquid crystal display, and in particular to a liquid crystal display with a capacitance compensation structure. Background technique [0002] Liquid crystal display (LCD) is the most widely used flat-panel display at present. It has the characteristics of low power consumption, thin and light weight, and low voltage drive. Its display principle is to use the material properties of liquid crystal molecules to Finally, the alignment state of the liquid crystal molecules is changed, causing various photoelectric effects in the liquid crystal material. Generally speaking, the display area of ​​LCD includes a plurality of pixel areas, and each pixel area is defined by two gate lines (also known as scan lines) and two data lines (data lines). In a rectangular area, a thin film transistor (hereinafter referred to as TFT) and a pixel electrode (pixel electrode) are disposed therein, and the thin film transistor is a switchi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1343G02F1/136H01L29/786
CPCH01L29/41733
Inventor 来汉中
Owner AU OPTRONICS CORP