Nonvolatile capacitor of a semiconductor memory device, and method of operating the same

Abstract

Provided are a capacitor of a semiconductor device, a semiconductor storage device including the capacitor, and an operating method of the semiconductor storage device. The capacitor includes: a lower electrode; a dielectric layer laminated on the lower electrode and including a phase change layer showing two remarkably different resistance characteristics after its insulating property is changed; and a dielectric layer laminated on the dielectric layer. layer on the top electrode. A semiconductor memory device including the capacitor is as fast in operation as a dynamic random access memory and has the same non-volatility as a flash memory device.

Description

technical field [0001] The present invention relates to a semiconductor device and a semiconductor memory device including the semiconductor device, and more particularly, to a nonvolatile capacitor of the semiconductor device, a semiconductor memory device including the capacitor, and an operating method of the memory device. Background technique [0002] Semiconductor memory devices mainly include transistors and capacitors. In recent years, various storage media have been developed to replace capacitors. Among them, representative is a magnetic tunnel junction (MTJ) cell included in a magnetic memory device. [0003] It is desired that semiconductor memory devices have a high degree of integration, a high operating speed, and excellent non-volatility sufficient not to lose data stored therein even after power is turned off. [0004] Among widely used semiconductor memory devices, Dynamic Random Access Memory (DRAM) has the advantages of high integration and high operati...

AI Technical Summary

Problems solved by technology

[0005] Flash memory is non-volatile compared to DRAM, but has lower integration and operating speed than DRAM

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