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Semiconductor device

一种半导体、器件的技术,应用在半导体器件领域,能够解决接合线长度增加、接合线拉长、布线难以获得接合线阻抗匹配等问题

Inactive Publication Date: 2005-12-07
SOCIONEXT INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially in the case where the high-speed signal line is composed of a differential mode pair, the length of the bonding wire increases, which results in a situation where an appropriate impedance (such as 100Ω) cannot be provided
[0011] In addition, since the bonding wire is elongated, there arises a problem that it is difficult to obtain impedance matching of the bonding wire with wiring formed in a low-cost substrate
Although impedance matching can also be achieved within the substrate by forming wiring in the substrate using fine structures, it is not desirable to form fine structures in only a part of the low-cost substrate

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

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Embodiment Construction

[0035] will now Figures 1 to 3 , a description is given of the semiconductor device according to the first embodiment of the present invention. figure 1 is an internal transparent side view of a ball-grid array (BGA) type semiconductor device according to a first embodiment of the present invention. figure 2 yes figure 1 Transparent plan view of the semiconductor device shown in . image 3 yes means figure 1 A plan view of the bond wire structure of the semiconductor device shown in .

[0036] A semiconductor device according to the first embodiment of the present invention includes: a substrate 2 ; a semiconductor element 4 mounted on the substrate 2 ; and an impedance matching substrate 6 mounted on the substrate 2 . The semiconductor element 4 and the impedance matching substrate 6 are wire-bonded to the electrode 2a of the substrate 2 (see image 3 ), and they are completely encapsulated by the sealing resin 8 on the substrate 2. Disposed on the back of the substra...

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Abstract

In a semiconductor device, bonding-wires can be applied parallel to each other to electrodes of high-speed signal lines when mounting a highly densified semiconductor element on a low-cost substrate while reducing a length of the bonding-wires. An impedance-matched substrate (6) having wiring that impedance-matched with circuits of a semiconductor element (4) is mounted on a substrate (2). A plurality of first metal wires (12) connect between first electrodes (4a) of the semiconductor element (2) and electrodes (2a) of the substrate. A plurality of second metal wires (14) connect between second electrodes (4b) of the semiconductor element (2) and first electrodes (6a) of the impedance-matched substrate (6). A plurality of third metal wires (16) connect between second electrodes (6b) of the impedance-matched substrate (6) and electrodes (2a) of the substrate (2). The second metal wires (14) extend parallel to each other, and the third metal wires (16) also extend parallel to each other.

Description

technical field [0001] The present invention relates to a semiconductor device, and particularly to a semiconductor device in which a semiconductor element is mounted on a substrate by wire-bonding. Background technique [0002] In recent years, high-density semiconductor elements have been developed, which has resulted in a reduction in the pitch of electrode terminals formed on the semiconductor elements. In addition, the processing speed of input and output signals has been increased, which in many cases can provide electrode terminals for input and output of high-frequency signals. [0003] High-frequency signal lines connected to electrode terminals for outputting and inputting high-frequency signals need to obtain impedance matching with peripheral circuits and wiring. Generally, a differential pair is formed by two high-frequency lines, and the differential pair is located between shielded lines such as ground lines, power lines, and the like. [0004] Generally, in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/12H01L21/60H01L21/607H01L23/48H01L23/552H01L23/66
CPCH01L2924/01082H01L2924/01004H01L23/552H01L2924/01002H01L2224/48475H01L2924/15311H01L2924/01029H01L23/66H01L2224/48091H01L2224/49171H01L2924/014H01L24/49H01L23/49838H01L2224/85051H01L2924/1903H01L2924/3011H01L2224/48137H01L24/48H01L2224/48465H01L23/13H01L2224/48227H01L2224/4912H01L2224/48011H01L2924/19011H01L2924/01033H01L2924/01006H01L2924/01078H01L2224/48471H01L2223/6627H01L2224/49175H01L2924/3025H01L24/45H01L2224/451H01L2924/15747H01L2924/181H01L2924/30111H01L2924/00014H01L2924/00H01L2924/00012H01L23/12H01L23/48H01L21/60
Inventor 十和人久保田义浩浅田宪治细山田澄和
Owner SOCIONEXT INC