Unlock instant, AI-driven research and patent intelligence for your innovation.

Lead frame for semiconductor element and semiconductor device using same

A lead frame and semiconductor technology, used in semiconductor devices, semiconductor/solid-state device components, semiconductor lasers, etc., can solve the problems of prolonged soldering time, insufficient soldering strength, thermal damage to semiconductor components, etc., to improve workability. Effect

Inactive Publication Date: 2006-01-11
SONY CORP
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] That is, when two inner leads are soldered at the same temperature, the inner lead connected to the land area conducts heat to the pad area, so heat dissipation occurs; for discontinuous inner leads, the soldering temperature decreases, and this occurs Insufficient soldering strength and prolonged soldering time
[0011] Moreover, it will cause thermal damage to the mounted semiconductor components.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lead frame for semiconductor element and semiconductor device using same
  • Lead frame for semiconductor element and semiconductor device using same
  • Lead frame for semiconductor element and semiconductor device using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Next, specific embodiments of a lead frame for mounting a semiconductor element and a semiconductor device using the lead frame according to the present invention will be described with reference to the drawings.

[0028] figure 1 A lead frame 1 related to the present invention is shown. The lead frame 1 is made of a thin plate-shaped conductive material by punching, electro-etching and other methods. That is, the main structure is composed of a pad region 10 for die-bonding (mounting) a semiconductor element, and inner leads 11a, 11b for conducting electricity to electrodes of the semiconductor element. Each of the inner leads 11a, 11b is used to conduct electricity with the electrodes of the semiconductor element, and has a discontinuous portion 13 cut off so that it does not conduct electricity and heat with the pad region 10 .

[0029] figure 2 The enlarged view is omitted for explaining the part of the semiconductor device in which the semiconductor element 20...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention prevents a heat dissipation from an inner lead to a die pad area at the time of soldering process of the inner lead by providing a discontinuous part between the die pad area and the inner lead frame. The lead frame 1 for discontinuously forming die pad area 10 for mounting a semiconductor device and the inner lead 11 is provided.

Description

technical field [0001] The present invention relates to a lead frame on which a semiconductor element is mounted and a semiconductor device using the lead frame. Background technique [0002] A lead frame for mounting a semiconductor element is made of a thin plate-shaped conductive material having a predetermined shape. [0003] For example, as shown in Fig. 1 of the following patent document 1, the pad region for bonding with the semiconductor substrate chip of the semiconductor laser element 1, the inner lead (cathode connection terminal 2a) connected to the pad region, and the bonding pad region are formed. The pad region is separated and is constituted by an inner lead (anode connection terminal 3 ) connected to the electrode lead of the semiconductor laser element 1 by wire bonding. [0004] That is, if Figure 6 As shown, the lead frame 50 is provided with a pad area 51 for soldering the semiconductor element chip, an inner lead 52 electrically connected to the pad a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/022H01L23/495H01L23/28G11B7/125
CPCH01L2924/0002H01L2224/48091H01L2224/48247H01L2924/00014H01L23/495
Inventor 佐藤庆二土门大志鹿鸟政彦
Owner SONY CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More