Quick simulator based on static random storage and method

A static random and memory technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of increased parasitic parameters, slow simulation speed, and unsatisfactory post-simulation speed.

Inactive Publication Date: 2006-03-22
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
0 Cites 5 Cited by

AI-Extracted Technical Summary

Problems solved by technology

However, the post-layout simulation speed of the new software is not satisfactory. There are two reasons. On the one hand, the capacity of SRAM increases rapidly; The number of devices that need to be simulated and calcu...
View more

Method used

The present invention has obtained application in the SRAM design process of No. Godson II CPU, and what it adopted is SMIC 0.18umCMOS technology, and we have designed a 64, operating frequency is 500 megahertz, the SRAM of capacity 4Kb. In order to verify the accuracy and reliability of this method, we compared the results measured by this method with the final simulation results after the entire layout. Table 1 lists the comparison...
View more

Abstract

The present invention relates to semiconductor memory technology, and is especially one kind of fast simulator based on SRAM and its simulation method. The circuit artwork structure consists of the equivalent circuit model of memory unit in the vertex and the memory units in other positions. The simulation process includes the following steps: 1. finding out and maintaining the artwork of the memory unit in the vertex in the SRAM artwork; 2. extracting corresponding equivalent circuit model for the memory unit artwork of other positions; and 3.post-simulating the whole extracted netlist of the equivalent circuit while simulating only the maintained vertex memory unit. The present invention has the feature of wide application range and may be used in designing SRAM design and other kinds of memory.

Application Domain

Semiconductor/solid-state device manufacturingDigital storage +2

Technology Topic

Storage cellSemiconductor memory +5

Image

  • Quick simulator based on static random storage and method
  • Quick simulator based on static random storage and method
  • Quick simulator based on static random storage and method

Examples

  • Experimental program(1)

Example Embodiment

Specific embodiment
[0047] The invention has been applied in the SRAM design process of the Loongson II CPU. It adopts SMIC’s 0.18um CMOS process. We have designed a 64-bit SRAM with a working frequency of 500 MHz and a capacity of 4Kb. In order to verify the accuracy and reliability of this method, we compared the results measured by this method with the final simulation results after the entire layout. Table 1 lists the comparison results of several typical data. At the same time, a large amount of simulation data was compared, and the results showed that the maximum deviation between the two did not exceed 5%, and the simulation speed was nearly doubled each time, which greatly improved the work efficiency. The entire chip has now passed the tape-out verification, which fully demonstrates that the results of the simulation test are accurate and reliable.
[0048] Table 1 Comparison of simulation results
[0049]

PUM

no PUM

Description & Claims & Application Information

We can also present the details of the Description, Claims and Application information to help users get a comprehensive understanding of the technical details of the patent, such as background art, summary of invention, brief description of drawings, description of embodiments, and other original content. On the other hand, users can also determine the specific scope of protection of the technology through the list of claims; as well as understand the changes in the life cycle of the technology with the presentation of the patent timeline. Login to view more.
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products