Quick simulator based on static random storage and method
A static random and memory technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of increased parasitic parameters, slow simulation speed, and unsatisfactory post-simulation speed.
Inactive Publication Date: 2006-03-22
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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AI-Extracted Technical Summary
Problems solved by technology
The present invention relates to semiconductor memory technology, and is especially one kind of fast simulator based on SRAM and its simulation method. The circuit artwork structure consists of the equivalent circuit model of memory unit in the vertex and the memory units in other positions. The simulation process includes the following steps: 1. finding out and maintaining the artwork of the memory unit in the vertex in the SRAM artwork; 2. extracting corresponding equivalent circuit model for the memory unit artwork of other positions; and 3.post-simulating the whole extracted netlist of the equivalent circuit while simulating only the maintained vertex memory unit. The present invention has the feature of wide application range and may be used in designing SRAM design and other kinds of memory.
Semiconductor/solid-state device manufacturingDigital storage +2
Storage cellSemiconductor memory +5
- Experimental program(1)
Description & Claims & Application Information
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