Semiconductor device having aluminum electrode and metallic electrode
An aluminum electrode, metallization technology, applied in semiconductor devices, electric solid-state devices, semiconductor/solid-state device components, etc., can solve problems such as shortening durability
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no. 1 example
[0026] The inventors have initially investigated the junction between metallized electrodes and solder layers. Figure 7A ~ Figure 7C An example method of forming a metallized electrode on an aluminum electrode using Ni / Au plating is shown in . An interlayer insulating film 4 is formed on one face of the semiconductor substrate 1 . The insulating film 4 is patterned and electrically insulated between the gate and the emitter. An aluminum electrode 11 is deposited on the one face of the substrate 1 to cover the insulating film 4 by using a sputtering method or a vapor deposition method.
[0027] like Figure 7A As shown, the aluminum electrode 11 has protrusions and recesses corresponding to the insulating film 4 . Then, the oxide film formed on the aluminum electrode 11 is removed by etching the surface of the aluminum electrode 11 . like Figure 7B As shown, the metallized electrode 13 is formed on the aluminum electrode 11 . The metallized electrode 13 includes a nicke...
no. 2 example
[0075] Image 6 A semiconductor device according to a second embodiment of the present invention is shown. specifically, Image 6 A laminated structure of an aluminum electrode 11 and a metallized electrode 13 is shown. The metalized electrode 13 is formed by a PVD method such as a sputtering method and a vapor deposition method. The thickness of the metallized electrode 13 includes, for example, a 0.2 μm thick titanium layer 13 c, a 0.5 μm thick nickel layer 13 d, and a 0.1 μm thick gold layer 13 e.
[0076] This second embodiment has the same advantages as the first embodiment. Specifically, the recesses and protrusions of the metallization electrode 13 arranged on the aluminum electrode 11 are smaller in order to improve the bonding strength of the aluminum electrode 11 . Also, electrical failure of the device is reduced.
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