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Sintering method of pipe core of electric semiconductor device

A technology for power semiconductors and sintering methods, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of high vacuum, high production cost, poor safety, etc., and achieves the effect of good safety and low cost

Inactive Publication Date: 2006-09-13
田钰贞
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Vacuum sintering generally requires a high degree of vacuum, high production cost, and troublesome operation; while hydrogen sintering not only has poor safety and high hydrogen cost, but also produces water vapor, which affects the quality of sintering of the tube core.

Method used

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Examples

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Comparison scheme
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Embodiment Construction

[0007] A method for sintering power semiconductor device cores, which includes placing silicon wafers, solder wafers and substrate wafers on a sintering boat as usual, and pushing them into the quartz tube of the sintering furnace for sintering; especially when sintering the quartz tube of the sintering furnace Pass carbon monoxide gas and use carbon monoxide gas as a reducing atmosphere.

[0008] The purity of the carbon monoxide gas should be more than 80% in order to better eliminate the oxygen in the quartz tube during sintering. The pressure of the carbon monoxide gas introduced into the quartz tube of the sintering furnace should be between 1.5-3 atmospheres, so that there can be an ideal reducing atmosphere in the quartz tube of the sintering furnace. The substrate sheet can be a molybdenum sheet, and the welding sheet is a silver-lead-tin alloy, or a gold-antimony alloy welding sheet and other materials.

[0009] The invention uses carbon monoxide gas as a reducing atmosph...

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PUM

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Abstract

This invention relates to a sintering method for power semiconductor apparatus cores including putting silicon plates, weld plates and substrate plates on a sintering boat to be sintered in a quartz capsule especially penetrating CO in the capsule and taking it as a recovery atmosphere.

Description

Technical field [0001] The utility model relates to power semiconductor device manufacturing technology, in particular to a sintering method for power semiconductor device tube cores. Background technique [0002] In the production of power semiconductor device die, in order to support the silicon wafer, ohmic contact and heat dissipation, it is necessary to sinter the silicon wafer on a substrate (such as a molybdenum wafer) to form a die. Existing methods for sintering the cores of power semiconductor devices usually adopt vacuum sintering, or pass hydrogen into the quartz tube of the sintering furnace, and use hydrogen as a reducing atmosphere for sintering. Vacuum sintering generally requires a higher degree of vacuum, high production cost, and troublesome operation; while hydrogen sintering not only has poor safety and high hydrogen cost, but also generates water vapor, which affects the sintering quality of the tube core. Summary of the invention [0003] The purpose of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/324
Inventor 田钰贞田小钰
Owner 田钰贞