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Nonlinear element, element substrate including the nonlinear element, and display device

一种非线性元件、显示器件的技术，应用在非线性光学、电气元件、电固体器件等方向，能够解决绝缘体薄膜膜厚度难度大、统一绝缘体薄膜膜厚度、非线性元件特性不均匀等问题，达到影响小、实现欧姆接触、防止闪烁的效果

Inactive Publication Date: 2006-09-27
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, conventional nonlinear elements using insulator films are difficult to drive at low voltages due to the large resistivity of insulator films
[0006] In addition, insulator thin films used in conventional nonlinear elements have different resistance values ​​according to their film thicknesses, so there are problems of non-uniformity in the characteristics of nonlinear elements and the need to unify the film thickness of each insulator thin film
However, it is difficult to unify the film thickness of all insulator thin films used in nonlinear elements, and it takes a long time to unify the film thickness, so there is a problem that productivity decreases

Method used

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  • Nonlinear element, element substrate including the nonlinear element, and display device
  • Nonlinear element, element substrate including the nonlinear element, and display device
  • Nonlinear element, element substrate including the nonlinear element, and display device

Examples

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Embodiment approach 1

[0035] One mode of the element structure of the nonlinear element of the present invention will be described in this embodiment mode.

[0036] In this embodiment, reference will be made to figure 1 An example of the element structure of the nonlinear element of the present invention will be described. The nonlinear element of the present invention has a structure in which a layer 102 containing a composite material is formed between a first electrode 101 and a second electrode 103 .

[0037] As the first electrode 101, various metals, alloys, conductive compounds, and mixed metals of these materials can be used. For example, in addition to indium tin oxide (ITO: Indium Tin Oxide), indium tin oxide containing silicon oxide, and IZO (Indium Zinc Oxide) in which 2 to 20 wt % of zinc oxide (ZnO) is mixed in indium oxide In addition, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), titanium (Ti), Copper (Cu), palladium ...

Embodiment approach 2

[0062] In Embodiment Mode 2, one mode of the structure of an element substrate having the nonlinear element of the present invention as described in Embodiment Mode 1 and its manufacturing method will be described. Figure 3A to 3C are cross-sectional views along the dotted line A-B in FIG. 4 in various steps, Figures 4A to 4C is a top view of each step.

[0063] The first electrode 302 is formed into a desired shape on the insulating substrate 301 by employing a patterning technique. As an electrode material, the materials mentioned in Embodiment 1 may be suitably used. In addition, the formation method is not limited thereto.

[0064] In this embodiment mode, an insulating substrate made of glass, plastic, quartz, or the like can be used. In addition, the substrate material used to form the element substrate having the nonlinear element of the present invention is not limited thereto.

[0065] After forming a predetermined pattern on the insulating substrate 301 on whic...

Embodiment approach 3

[0070] By applying the nonlinear element substrate of the present invention, a liquid crystal display device can be manufactured. In this embodiment, Figures 5A and 5B and Figures 6A to 6C A method of manufacturing a liquid crystal display device will be described. 5A is a top view of a pixel region in a display device, Figure 5B is a cross-sectional view along the dotted line C-D in FIG. 5A. also, Figure 6A It is also a top view of the display device, Figure 6B is along Figure 6A The cross-sectional view of the solid line C-D in. For the same parts or parts having the same functions, repeated descriptions thereof will be omitted.

[0071] First, FIGS. 5A and 5B will be described. In the pixel region, a nonlinear element 503 and a pixel electrode 504 of the present invention are formed on an insulating substrate 502 having a polarizer 501 .

[0072] Next, an insulating layer 500 called an alignment film is formed by a printing method or a spin coating method so as...

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Abstract

The purpose of the present invention is to provide a nonlinear element with high productivity, which can be driven at low voltage, an element substrate including the nonlinear element, and a liquid crystal display device including the element substrate. A structure of the nonlinear element of the present invention includes a layer formed using a composite material containing an inorganic compound and an organic compound between a first electrode and a second electrode. Further, as the composite material containing the inorganic compound and the organic compound, a composite material, which exhibits nonlinear behavior in both cases of applying forward bias voltage and reverse bias voltage, is used.

Description

technical field [0001] The present invention relates to a nonlinear element, an element substrate having the nonlinear element, and a display device having the element substrate. In particular, the present invention relates to a liquid crystal display device using a nonlinear element as a switching element. Background technique [0002] In recent years, studies on the use of nonlinear elements for liquid crystal display devices have been conducted. As one of the nonlinear elements, a MIM (metal-insulator-metal structure) switching element composed of a three-layer structure in which a bottom conductor film, an insulator film, and an upper conductor film are stacked is known. [0003] As a conventional MIM switching element, a structure as shown in FIG. 14 is known, in which a bottom conductor film 1002 is formed on a substrate 101 made of glass, and an insulator film 1003 is formed on the entire surface, and formed thereon. The upper conductor film 1004 and the pixel elect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/30G02F1/136
CPCG02F1/1362H01L45/00H01L51/0054H01L51/006H10N70/00H10K85/622H10K85/633
Inventor 平形吉晴坂田淳一郎池田寿雄岩城裕司川上贵洋
Owner SEMICON ENERGY LAB CO LTD