Method for releasing chip static electricity thoroughly in chip etching equipment
A technology for etching equipment and wafers, used in the manufacture of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of excessive forward leakage current, impurity elimination of static electricity, and inability to completely eliminate static electricity, so as to eliminate static electricity. , the effect of simple operation
Active Publication Date: 2006-10-18
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology
At present, the method of eliminating static electricity on the chip adopts the method of applying reverse voltage. It is judged whether the static electricity is eliminated by applying the reverse voltage for a certain period of time or detecting the leakage current to a certain value. The disadvantage of this method is that the time for applying the reverse voltage is determined by the test. It is shown that there is uncertainty. When the time is too long, the leakage current has become a reverse leakage current. If the time is too small, the forward leakage current will be too large, resulting in the inability to completely eliminate static electricity. A method of completely removing static electricity was proposed above, which overcomes the defect of electrostatic attraction in the original method caused by unclean static electricity removal, and achieves satisfactory results.
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[0024] refer to figure 1 , the wafer etching equipment includes an industrial computer 1 that has stored a control program and a controlled hardware system 2 connected with the industrial computer, and the controlled hardware system 2 includes a reaction chamber 15, an electrostatic chuck 5, an Dry pump 19, a gas flow controller 11, the industrial computer 1 is used to execute the control program, and control the entire working process of the controlled hardware system 2.
[0025] refer to figure 2 , the wafer 14 is placed above the electrostatic chuck 5, and the electrostatic chuck 5 is connected to the forward electrode 6 and the reverse electrode 13.
[0026] refer to image 3 , the start-up process of the wafer etching equipment is as follows:
[0027] The industrial computer 1 issues an instruction to start the dry pump 19, close the pneumatic valve 8, open the bypass slow pumping valve 20, delay for 30 seconds, open the bypass fast pumping valve 7, and close the bypa...
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In the semiconductor equipment the wafer can be fixed on the electrostatic chuck in reaction chamber by means of static electricity to make processing treatment, after the processing treatment is completed, the static electricity can be released and the wafer can be taken out. On the basis of actual tests said invention provides a method capable of completely removing static electricity by utilizing ionic conductivity of argon strike.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for releasing static electricity on a wafer in wafer etching equipment. Background technique [0002] During the etching process of the semiconductor process, the wafer is electrostatically fixed on the electrostatic chuck in the reaction chamber for process processing. After the process is over, it is necessary to discharge the static electricity before taking the wafer away. At present, the method of eliminating static electricity on the chip adopts the method of applying reverse voltage. It is judged whether the static electricity is eliminated by applying the reverse voltage for a certain period of time or detecting the leakage current to a certain value. The disadvantage of this method is that the time for applying the reverse voltage is determined by the test. It is shown that there is uncertainty. When the time is too long, the leakage current has becom...
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IPC IPC(8): H01L21/00C23F1/12C23F4/00H01L21/3065H01L21/683
Inventor ไป้็
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD