Compound semiconductor switch circuit device
A switching circuit and semiconductor technology, applied in electronic switches, electrical components, pulse technology, etc., can solve problems such as poor distortion characteristics, high-frequency signal leakage, etc., reduce the level of second high harmonics, maintain chip area, improve The effect of the second harmonic level
Inactive Publication Date: 2006-11-01
SANYO ELECTRIC CO LTD
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Problems solved by technology
Specifically, in the signal path between the common input terminal IN and the first output terminal OUT1 on the ON side, only a value of Pin 0.1dB lower than the design by a few dB can be secured.
In addition, there is also a problem that high-frequency signal leakage occurs between the source electrode and the drain electrode in the Y region, and the distortion characteristics are also poor.
Method used
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Embodiment Construction
[0051] refer to Figure 1 to Figure 7 Embodiments of the present invention will be described in detail.
[0052] First, refer to Figure 1 to Figure 7 The first embodiment will be described. figure 1 It is a circuit diagram showing an example of a DPDT (Double Pole Double Throw: Double Pole Double Throw) switch MMIC composed of four switching elements connected to FETs in multiple stages.
[0053] DPDT is a switch MMIC used in CDMA mobile phones, etc., which has first to fourth switching elements SW1, SW2, SW3, SW4, and two first RF ports (first common input terminal IN1, second common input terminal IN2) And two second RF ports (first common input terminal OUT1, second common input terminal OUT2). The SPDT switch composed of the first and second switching elements SW1, SW2 and the other SPDT switch composed of the third switching elements SW3, SW4 are connected to each other by the second RF port.
[0054] The switching elements SW1, SW2, SW3, and SW4 are FET groups in w...
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A gate wiring electrode is formed into a ladder-like pattern. Moreover, between source electrodes and drain electrodes in the entire Switch MMIC, the gate wiring electrodes are disposed. Furthermore, at a cross part between the gate wiring electrode and the source electrode or the drain electrode, a nitride film having a large relative dielectric constant and a polyimide or a hollow part having a small relative dielectric constant are disposed. Accordingly, a capacitance at the cross part is reduced. Thus, a second harmonic wave level can be lowered. Moreover, a leak of a high-frequency signal between the drain electrode and the source electrode can be prevented. Thus, a third harmonic level can be lowered. Consequently, distortion characteristics of the Switch MMIC can be significantly improved.
Description
technical field [0001] The present invention relates to a compound semiconductor switching circuit device, and more particularly, to a compound semiconductor switching circuit device that suppresses leakage of high-frequency signals and prevents deterioration of distortion characteristics. Background technique [0002] In a compound semiconductor switching circuit device requiring high power, a switching element in which FETs are connected in multiple stages is used (for example, refer to Patent Document 1). [0003] Figure 18 In FIG. 2 , as an example of a conventional compound semiconductor chip, a switch MMIC composed of two switching elements in which FETs are connected in multiple stages is shown. [0004] Two FET groups constituting the first and second switching elements SW1 and SW2 are arranged on the compound semiconductor substrate. Each FET group has a structure in which three FETs are connected in series. A first control resistor CR1 and a second control resis...
Claims
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IPC IPC(8): H03K17/00
Inventor 浅野哲郎榊原干人日下佑一石原秀俊
Owner SANYO ELECTRIC CO LTD