Semiconductor light-emitting device

Abstract

The present invention discloses a semiconductor light emitting element capable of efficiently extracting light generated in a light emitting layer from a substrate. Comprising: a substrate (10) with light transmission; a light-emitting layer (23) arranged on the incident surface (11) side of the substrate (10) and using electroluminescence; and arranged on the substrate (10) A pair of N electrode (22) and P electrode (25) on the incident surface (11) side or the exit surface (12) side of the light-emitting layer (23), and on the exit surface of the substrate (10) The surface (12) forms grooves (13) for extracting light from the light emitting layer (23).

Description

technical field [0001] The present invention relates to a semiconductor light-emitting element that extracts light generated in a light-emitting layer through a substrate. Background technique [0002] Figure 11 It is a side view of a conventional conventional semiconductor light emitting element. [0003] Such as Figure 11 As shown, this semiconductor light-emitting element includes: a substrate 100 with light transmission; A voltage is applied to the P electrode 105 on the semiconductor layer 103 and the N electrode 106 on the substrate 100, so that the light emitting layer is energized and emits light. [0004] There is generally a large difference in refractive index between the substrate 100 used in a semiconductor light emitting element and its exterior. Therefore, the light generated in the light-emitting layer 102 repeats total reflection in the substrate 100 and travels a long distance in the substrate 100 as indicated by an arrow. [0005] However, the light a...

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Problems solved by technology

[0016] [Patent Document 3] Japanese Patent Laid-Open No. 2003-243708 As mentioned above, the semiconductor light-emitting elements described in Patent Documents 1 and 2 have an N electrode on the substrate, so light from the light-emitting layer is reflected or absorbed by the N electrode. Light extraction efficiency decreases

[0017] On the other hand, the technique of forming the P-type electrodes in a thin rectangular shape and arranging these electrodes on the P-type semiconductor layer described in Patent Document 3 is a technique for improving the amount of light emitted from the light-emitting layer itself, and cannot efficiently extract the light from the light-emitting layer. luminous layer of light

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