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Method of forming dual gate variable VT device

A threshold voltage and component technology, which is applied in the field of forming complementary metal oxide semiconductor components, can solve the problems of general products without structure and inconvenience

Active Publication Date: 2006-11-29
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] It can be seen that the above-mentioned existing double transistor obviously still has inconvenience and defects in structure and use, and needs to be further improved urgently.
In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and the general products do not have a suitable structure to solve the above-mentioned problems. This is obviously related. The problem that the industry is eager to solve

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  • Method of forming dual gate variable VT device
  • Method of forming dual gate variable VT device
  • Method of forming dual gate variable VT device

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Embodiment Construction

[0041]In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the specific implementation of the method for forming a double-gate variable threshold voltage element according to the present invention will be described below in conjunction with the accompanying drawings and preferred embodiments. , structure, feature and effect thereof, detailed description is as follows.

[0042] Although the method of the present invention is illustrated using a dual-threshold voltage transistor (also classified as a split double-gate device), the method of the present invention is generally applicable to devices with different surface topography and independently adjustable thresholds. Parallel fabrication of complementary metal oxide semiconductor (CMOS) for voltage (VT). Therefore, the dry etching process for forming the gate structure can be improved, so that each gate structure has its own different electrical...

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Abstract

A dual gate device having independently adjusted voltage thresholds with improved performance and reliability and method for forming the same, the method including providing a semiconductor substrate comprising a first gate structure on a first gate dielectric layer overlying a high voltage threshold (HVT) portion of the semiconductor substrate; then forming first sidewall spacers adjacent either side of the first gate structure; then forming a low voltage threshold (LVT) portion of the semiconductor substrate; then forming a second gate dielectric layer on the LVT portion; and, then forming a second gate structure on the second gate dielectric layer.

Description

technical field [0001] The present invention relates to a method for forming a complementary metal-oxide-semiconductor (CMOS) element in an integrated circuit process, and in particular to the formation of a double-gate metal-oxide-semiconductor field-effect transistor (MOSFET) with improved performance, reliability and productivity method. Background technique [0002] It is well known that increasing device density with higher speed performance and lower power consumption is a major driving force for improving integrated circuit manufacturing devices and methods. For example, complementary metal-oxide-semiconductor (CMOS) design considerations are to meet the requirements of low power and high speed at the same time. For example, if the supply voltage (V DD ) is reduced to low power consumption, and when the threshold voltage (VT) is fixed, it will cause the drive current (I drive ) is reduced, and consequently the speed performance of the device is reduced. On the oth...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8238H01L21/336H01L27/092H01L29/78
CPCH01L21/823857H01L29/78H01L21/28052H01L21/823842H01L21/28238
Inventor 赖育志吴子扬
Owner TAIWAN SEMICON MFG CO LTD