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Semiconductor light emitting element and semiconductor light emitting device

A technology of light-emitting element and light-emitting device, which is applied in the direction of semiconductor devices, electrical components, electric solid-state devices, etc.

Active Publication Date: 2006-12-06
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In a more extreme case, the overflowed conductive adhesive reaches the n-side electrode formed on the main surface on the opposite side of the semiconductor layer, thereby connecting the p-side electrode and the n-side electrode, thereby causing leakage current to occur, with such The problem

Method used

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  • Semiconductor light emitting element and semiconductor light emitting device
  • Semiconductor light emitting element and semiconductor light emitting device
  • Semiconductor light emitting element and semiconductor light emitting device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0033] (Semiconductor light emitting element)

[0034] Next, the semiconductor light emitting element of the first embodiment will be described.

[0035] figure 1 It is a cross-sectional view showing the structure of the semiconductor light emitting element 100 of the first embodiment.

[0036] Such as figure 1 As shown, the semiconductor light-emitting element 100 includes: a semiconductor layer 10 having a p-side reflective electrode 20 and a p-side transparent electrode 30 on one main surface, and an n-side electrode 40 on the other main surface; a supporting substrate 50, The main surface has a protruding surface 50s partially protruding; and a conductive adhesive 60 to adhere the semiconductor layer 10 and the supporting substrate 50.

[0037] The semiconductor layer 10 has, for example, an LED structure. For example, the semiconductor layer 10 is composed of an n-contact layer, an n-cladding layer, an active layer, a spacer layer, a p-cladding layer, and a p-contact layer...

no. 2 approach

[0064] (Semiconductor light emitting device)

[0065] Next, the semiconductor light emitting device of the second embodiment will be described. The semiconductor light-emitting element of the embodiment can be suitably used as a semiconductor light-emitting device.

[0066] Figure 4 It is a cross-sectional view showing the structure of the semiconductor light emitting device 150 of the second embodiment.

[0067] Such as Figure 4 In that way, the semiconductor light-emitting device 150 includes: a mounting member 80; a semiconductor light-emitting element 103 mounted in the mounting member 80; and a translucent resin 82 containing a phosphor 81 on the semiconductor light-emitting element 103. Among them, in Figure 4 In this case, wiring and the like for mounting the semiconductor light-emitting element 103 are omitted.

[0068] The semiconductor light-emitting element 103 has the same figure 1 The light-emitting element of the first embodiment as shown has the same configurat...

no. 3 approach

[0090] (Semiconductor light emitting element)

[0091] Refer to Figure 8 Next, the semiconductor light emitting element 106 of the third embodiment will be described. However, in the following, differences from the semiconductor light emitting element 103 used in the semiconductor light emitting device 150 of the second embodiment will be mainly described. Figure 8 It is a cross-sectional view of the semiconductor light emitting element 106 of the third embodiment.

[0092] Such as Figure 5 As shown, in the semiconductor light-emitting element 103 of the second embodiment, the protruding surface 53s is formed approximately in the center of the main surface of the support substrate 53, and in approximately the center of the adhesive surface 13s, the p-side reflective electrode 23 and the conductive adhesive The bonding agent 63 is used for bonding.

[0093] In contrast to this, such as Figure 8 As shown, in the semiconductor light-emitting element 106 of the third embodiment, t...

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PUM

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Abstract

A semiconductor light emitting element includes a semiconductor layer which has an electrode on at least one principal surface and a supporting substrate which is bonded with the electrode by a conductive adhesive. One of the semiconductor layer and the supporting substrate includes a protruded surface protruding in one portion on the principal surface, the other includes a junction surface which opposes the protruded surface, the junction surface is bonded with the protruded surface with the electrode and the conductive adhesive interposed between the protruded surface and the junction surface, and the junction surface is larger in area than a region to be bonded with the protruded surface.

Description

Technical field [0001] The invention relates to a semiconductor element and a semiconductor light emitting device. Background technique [0002] In recent years, in the semiconductor industry, semiconductor light-emitting elements such as light-emitting diode elements having a semiconductor layer have been actively developed. Semiconductor light-emitting elements are strongly expected to correspond to the increase in light output and the increase in current with the goal of replacing lighting applications in the future. [0003] In order to increase the light output of the semiconductor light emitting element, a method of attaching a growth substrate for growing the semiconductor layer to a supporting substrate capable of reflecting the emission wavelength of the semiconductor layer has been proposed (for example, Japanese Patent Application Laid-Open No. 9-8403). [0004] In this method, after the semiconductor layer is grown on the insulating growth substrate, the conductive su...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/60
CPCH01L2924/10158
Inventor 中岛三郎古泽浩太郎后藤壮谦
Owner EPISTAR CORP