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Photonic crystal-structural GaN-base blue LED structure and method for fabricating same

A technology of photonic crystals and blue light emission, which is applied in semiconductor devices, electrical components, circuits, etc.

Inactive Publication Date: 2006-12-13
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the application of photonic crystals to blue light and white light LEDs and the principle of coupling the conduction mode of photonic crystal slab waveguide into leaky mode and the use of photolithography have not been reported.

Method used

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  • Photonic crystal-structural GaN-base blue LED structure and method for fabricating same
  • Photonic crystal-structural GaN-base blue LED structure and method for fabricating same

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Embodiment

[0056] see figure 1 and figure 2 , the photonic crystal structure GaN-based blue light emitting diode structure includes a sapphire substrate 1; an N-type GaN layer 2, the N-type GaN layer 2 is directly grown on the sapphire substrate 1, and one side of the N-type GaN layer 2 There is a step etched on the plane to form a large plane and a small plane; a GaN material active layer 3, the GaN material active layer 3 is fabricated on the large plane on the N-type GaN layer 2; a P-type GaN layer 4. The P-type GaN layer 4 is made on the active layer 3; a P-type electrode 5 and a P-type pad 6, the P-type electrode 5 and the P-type pad 6 are laid on the P-type GaN layer 4; wherein the The electrode 5 described is a transparent electrode; the electrode 5 is laid on the upper side of the GaN layer 4 or laid on the entire GaN layer 4, and the electrode 5 is a square electrode or a ring electrode; an N-type electrode 7 and an N-type pad 8. The N-type electrode 7 and the N-type pad 8 ar...

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Abstract

The invention discloses a photon crystal structure GaN base blue luminous diode structure, which comprises the following parts: sapphire substrate, N-typed GaN layer, GaN material active layer, P-typed GaN layer, P-typed electrode and P-typed welding disc, N-typed electrode and N-typed welding disc and photon crystal region, wherein the N-typed GaN layer grows on the sapphire substrate directly, whose one side plane etches step to form a large plane and small plane; the GaN material active layer is made on the large plane of N-typed GaN layer; the P-typed GaN layer is made on the active layer; the P-typed electrode and P-typed welding disc are paved on the P-typed GaN layer; the N-typed electrode and N-typed welding disc are paved on the small plane of N-typed GaN layer; the photon crystal region is etched in the active layer and P-typed GaN layer until N-typed GaN layer to produce periodical round hole structure, whose center forms blank region of photon crystal region.

Description

technical field [0001] The technology belongs to the field of improving the luminous efficiency of white light emitting diodes in white light lighting engineering. In particular, it relates to the technology of improving the light extraction efficiency of white LEDs by using photonic crystal structures. Background technique [0002] The birth of semiconductor lighting sources is hailed as a revolution in the lighting field. Its symbol is that semiconductor light-emitting diodes (LEDs), as a new type of light source, gradually enter the general lighting market from the special lighting market, and the market prospect is extremely broad. As a special lighting source application, white light LED has shown huge performance advantages, strong development momentum and rapidly growing market demand. Compared with the luminous efficiency of currently commonly used lighting sources, it can be seen that improving the luminous power of GaN-based LEDs is the current priority. In terms...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/02
Inventor 许兴胜陈弘达马勇
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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