Fuse and method for disconnecting the fuse

Abstract

The fuse comprises an interconnection part 14 luding a silicon layer; a contact part 20b connected one end of the interconnection part 14; and a contact part 20aconnected to the other end of the interconnection part 14 and containing a metal material. A current is flowed from the contact part 20bto the contact part 20a to migrate the metal material of the contact part 20a to the silicon layer to thereby change the contact resistance between the interconnection part 14 and the contact part 20a.

Description

technical field [0001] The present invention relates to a fuse and a method of opening the fuse, and more particularly to a fuse capable of electrically opening and reconfiguring a circuit and a method of opening the fuse. Background technique [0002] Semiconductor devices such as memory devices of DRAM, SRAM, or logic devices contain a large number of devices, and some circuits or memory cells often do not work properly due to various factors in the manufacturing process. In this case, if a defective part of the circuit or memory cell makes the entire device defective, the manufacturing yield will be reduced, leading to an increase in manufacturing cost. In order to prevent this from happening, recently in semiconductor devices, defective circuits or defective memory cells are converted into redundant circuits or redundant memory cells to make the circuits or memory cells normal, thereby saving defective semiconductor devices . [0003] Some semiconductor devices include...

AI Technical Summary

Problems solved by technology

Therefore, the resistance of the fuse part increases by up to about 10 times, so it is difficult to judge the disconnection of the fuse

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