Method of aluminium oxide dielectric film silicon ion injection corrosion on semiconductor lining base

Abstract

A kind of injection corrosion method of alumina dielectric film silicon ion on the underlay of semiconductor, it is to erode the alumina film on the silicon purposely by using the silicon ion injection and HF chemical corrosion agent so as to form sharp, clear, planning alumina corrosion figure, including the following procedure: take one silicon single-crystal underlay of semiconductor, grow alumina dielectric film extensively on the semiconductor silicon single-crystal underlay; coat photoetching adhesive on the alumina dielectric film, etch on the photoetching adhesive so as to form concave photoetching adhesive etching figure with a given spacing; use silicon ion injection technology to perform selective silicon ion for the alumina dielectric film in the groove; use the HF chemical chemical corrosion technology to erode purposely the alumina dielectric film that has been completed the silicon ion injection so that to form the figures with line, and then complete the alumina dielectric film silicon ion injection corrosion on the silicon underlay of semiconductor.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a silicon ion implantation and etching method for an aluminum oxide dielectric film on a semiconductor silicon substrate. Background technique [0002] The semiconductor industry's requirements for the performance and cost of integrated circuits force the integration of integrated circuits to continuously increase, and the thickness of the gate dielectric layer decreases rapidly. The thickness of the traditional CMOS silicon oxide gate dielectric layer has shrunk to 1.5-2 nanometers, which is close to its limit thickness. 1.0-1.2 nanometers. The traditional silicon dioxide gate dielectric below 2nm will mainly face many physical limitations. [0003] In order to solve the leakage current problem of ultra-thin silicon dioxide gate dielectric integrated circuits, we began to look for high dielectric constant dielectric materials to replace traditional silicon dioxide gate d...

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Problems solved by technology

[0004] Aluminum oxide dielectric film on silicon is a new type of dielectric material system with high dielectric constant, but single crystal alumina including sapphire substrate is very stable to general chemical etchant, and the high chemical stability of alumina to chemical etchant leads to It is very difficult to fabricate the device

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