Optoelectronic component, method for manufacturing an optoelectronic component and mirror device

Abstract

Optoelectronic device (10) comprising: a support (12) which is transparent; an optoelectronic layer structure comprising: a first electrode (20) which is formed over the support (12) and which is transparent; an optically functional layer structure (22) which is formed over the first electrode (20); and a second electrode (23) which is formed over the optically functional layer structure, wherein a mirror region (44) is formed on a side of the optically functional layer structure (22) facing away from the support (12), which is reflective at least when viewed from the support (12); and an intermediate layer (60) which is formed between the support (12) and the mirror region (44) and which has an optical layer thickness which is greater than a coherence length of external light, wherein the optically functional layer structure (22) comprises an emitter layer.and- the intermediate layer (60) is arranged between the emitter layer and the mirror region (44).

Description

[0001] The invention relates to an optoelectronic component, a method for manufacturing an optoelectronic component and a mirror device.

[0002] Conventional optoelectronic devices, such as OLEDs, typically consist of a substrate, optically functional layers (e.g., organic functional layers), electrode layers, an encapsulation layer (e.g., a thin-film encapsulation layer, TFE) for moisture protection, and a cover (e.g., a cover plate). In many cases, a heat sink and / or heat spreader (e.g., a metal plate or foil) is laminated onto the cover glass. The cover plate serves as mechanical protection and an additional moisture barrier and, like the substrate, is usually made of solid glass. During the manufacturing process, the cover glass is typically laminated across its entire surface of the substrate. The encapsulation layer is formed between the cover plate and the substrate and generally extends over the entire substrate.

[0003] A conventional optoelectronic component can be designed to be reflective from at least one side. For example, a bottom-emitting OLED can have a transparent substrate, a transparent first electrode (such as an anode) mounted on the substrate, and a reflective second electrode (such as a cathode) spaced apart from the first electrode. Due to its metallic sheen, such an OLED can be used as a mirror when switched off. This makes it suitable for applications such as a makeup mirror in a car, a bathroom mirror, or a handbag mirror.In these applications, it may be intended that the OLED, when switched on, illuminates in an optically active edge area and emits, for example, a pleasant light with a high color rendering index (CRI), while a central area surrounded by the edge area is optically passive and merely serves as a mirror.

[0004] In conventional mirrors with OLEDs, the organic layers of the OLEDs can be applied to the entire substrate, including the passive, i.e., non-luminescent and reflective, surface. Because the organic layers are usually only a few hundred nanometers thick, on the order of the wavelengths of the visible light spectrum, an optical cavity, a so-called microcavity, forms due to a difference in refractive indices between the substrate material and the organic layer. In conjunction with the reflective cathode, the incident ambient light interferes with the ambient light reflected by the cathode. The optical cavity is spectrally selective, resulting in unwanted and unsightly color casts in the reflection when the mirror is viewed from different angles.

[0005] In conventional mirror applications, OLEDs and mirrors can be manufactured separately, and the finished components can then be combined. For example, the OLEDs can be manufactured separately and integrated into a mirror. In this case, the components (OLED and mirror) must be manufactured separately and then combined in a complex process (milling holes in the mirror and inserting the OLED). This process can be very complex and expensive. The OLED itself remains spectrally selective when switched off. Therefore, in these applications, the "illumination" function is separate from the "mirror" function.

[0006] Another way to create a reflective surface enclosed in an OLED is to cut through the organic layers and the cathode using a fine laser cut, or to structure the anode using selective etching or laser steps before applying the organic layers, so that the inner surface of the OLED no longer emits light. However, as described previously, the optically passive, reflective inner region is covered by the organic layers, resulting in a strong viewing angle dependency of the reflected image.

[0007] In various embodiments, an optoelectronic component and / or a mirror device is provided, which is of simple design and / or which provides a mirror and / or has a light source, wherein the mirror provides a homogeneous mirror image over its entire reflective surface, in particular regardless of the operating state and / or regardless of the viewing angle.

[0008] In various embodiments, a method for manufacturing an optoelectronic component is provided which makes it possible to easily provide a mirror and / or a light source by means of the optoelectronic component, wherein the mirror provides a homogeneous mirror image over its entire reflective surface, in particular regardless of the operating state and / or regardless of the viewing angle.

[0009] In various embodiments, an optoelectronic component is provided. The optoelectronic component has a transparent support. An optoelectronic layer structure is formed over the support and comprises a first transparent electrode, an optically functional layer structure formed over the first electrode, and a second electrode formed over the optically functional layer structure. On a side of the optically functional layer structure facing away from the support, a mirror region is formed, which is reflective at least when viewed from the support. An intermediate layer is formed between the support and the mirror region and has an optical layer thickness greater than the coherence length of external light.

[0010] The optical layer thickness is determined by the wavelength of the incident light and the refractive index of the interlayer material. If the optical layer thickness exceeds the maximum coherence length of the spectral range of the external light, no optical cavity, such as a microcavity, forms, and the entire layer stack—comprising the interlayer, the first electrode, and the optically functional layer structure—can be considered optically incoherent. The microcavity of the optoelectronic device, such as an OLED, is disrupted. The interlayer thus eliminates the spectral selectivity of the reflection and the dependence of the reflection on the viewing angle. Therefore, the optoelectronic device appears as a perfect mirror when switched off.The optoelectronic component can be used as a mirror device for viewing a mirrored image with an integrated luminous surface.

[0011] The intermediate layer can, for example, have the same or at least approximately the same refractive index as the first electrode, which may, for example, have an ITO structure, and the optically functional layer structure, which may, for example, have an organic functional layer structure. Alternatively or additionally, the intermediate layer can have a negligible extinction coefficient.

[0012] The intermediate layer can be formed between the support, for example, a glass substrate, and the optoelectronic layer structure. Alternatively, the intermediate layer can be formed between the optically functional layer structure and the second electrode. In both of these alternatives, the second electrode, for example, the cathode, can be reflective and have or form the mirror region. For example, the second electrode can be made of a metallic material, such as a metal and / or a metalloid. The intermediate layer can then be electrically conductive. The intermediate layer can, for example, consist of an electron transport layer and / or an electron injection layer, which may be doped and / or be particularly thick compared to a conventional electron transport layer or electron injection layer.

[0013] Furthermore, the optoelectronic component can have a cover arranged over the second electrode. The second electrode can be transparent, and the cover can have a mirrored area, or the mirrored area can be formed between the second electrode and the cover. The intermediate layer can be formed between the second electrode and the mirrored area.

[0014] External light is light that is not generated by the OLED. For example, external light is visible light that falls on the optoelectronic device from the outside. 10The external light source can be, for example, natural light such as sunlight, or artificial light such as lighting in an enclosed space, such as a bathroom or vehicle, such as interior car lighting, or "ambient light". Therefore, the thickness of the intermediate layer can depend on the intended application environment.

[0015] In this application, the coherence length refers to the coherence length within the medium. The coherence length of the incident light within the medium can be calculated using the following formula F1: L = 2·ln(2)·λ 2 / (π·n·Δλ), (F1) where λ is the wavelength of the incident light, n is the refractive index of the interlayer (n > 1; for air n = 1), and Δλ is the spectral width, for example, the full width at half maximum (FWHM) of the incident light spectrum of the external light. Thus, the coherence length is also determined by the spectral width of the spectrum. The broader the spectrum, the shorter the coherence length. The narrower the spectrum, the longer the coherence length. For example, the coherence length of natural light, such as sunlight, is on the order of the mean wavelength, for example, approximately 1 µm. The layer thickness can then be calculated using the following formula F2: D > L (F2) where D is the layer thickness and L is the coherence length.

[0016] In various embodiments, the second electrode is reflective, and the reflective surface is formed by the second electrode. The second electrode can, for example, be the cathode of the optoelectronic device. The second electrode can be made of a metallic material, such as a metal, a semimetal, and / or a semiconductor. For example, the second electrode can be made of aluminum, silver, magnesium, or a mixture or alloy containing one or more of these materials. For example, the second electrode can be made of AgMg. The reflective design of the second electrode contributes to a simple and / or cost-effective design of the optoelectronic device. For example, the need for an additional reflective layer or cover, or the formation or placement of a reflective coating, can be eliminated.

[0017] In various embodiments, the second electrode is transparent and a mirror layer is formed above the second electrode, forming the mirror area.

[0018] In various embodiments, the optoelectronic layer structure comprises at least one optically active region and at least one optically passive region. The optically active region can, for example, be a region in which electromagnetic radiation is generated as a result of a current flow during operation of the optoelectronic device, or in which electromagnetic radiation is absorbed to generate a current flow. Outside of operation, i.e., when the optoelectronic device is off, the optically active region can serve as a mirror, for example, for viewing a reflection. The optically passive region can also be referred to as an optically inactive region. Regardless of the operating state of the optoelectronic device, i.e., in both the on and off states, the optically passive region serves as a mirror, for example, for viewing a reflection.During operation of the optoelectronic component, a luminescent surface of the mirror is thus arranged in the optically active area and a mirror surface of the mirror is arranged in the optically passive area.

[0019] In various embodiments, a first optically active area surrounds an optically passive area, and the optically passive area surrounds a second optically active area. For example, the first optically active area can extend around the passive area in a frame-like fashion, thus forming a luminous frame around the mirror surface during operation. The second optically active area can form a luminous surface within the mirror surface during operation. This second optically active area can be configured, for example, to display information on the mirror surface, such as a letter, a word, a text, a graphic, an image, or a logo.

[0020] In various embodiments, the optically active region is separated from the optically passive region by an interruption of at least part of the optoelectronic layer structure at the transition from the active region to the passive region. For example, the optoelectronic component can initially be manufactured as a potentially fully active component, independent of the optically active and the optically passive regions. Subsequently, the interruption can be introduced in such a way that the optically functional layer structure in the optically passive region is no longer functional and is therefore only passive and reflective.Alternatively, the interruption can be introduced during the manufacture of the optoelectronic component, for example by forming an optically passive layer instead of at least part of the optoelectronic layer structure in the optically passive area, such that the optically functional layer structure in the optically passive area is no longer functional and therefore only passive and reflective.

[0021] In various embodiments, the optically active region is separated from the optically passive region by an interruption of the first and / or second electrode at the transition from the active region to the passive region. This makes it easy to suppress the functionality of the optically functional layer structure in the optically passive region.

[0022] In various embodiments, the optically active region is separated from the optically passive region by a break in the optically functional layer structure at the transition from the active region to the passive region. This makes it easy to impair the functionality of the optically functional layer structure in the optically passive region.

[0023] In various embodiments, an optically passive layer is formed in the optically passive region between the substrate and the mirror region instead of at least part of the optoelectronic layer structure. This makes it easy to suppress the functionality of the optically functional layer structure in the optically passive region. For example, the optically passive layer can be formed in the optically passive region instead of the first electrode, instead of the second electrode, and / or instead of the optically functional layer structure. The fact that the optically passive layer is optically passive in this context means that it is not suitable for generating electromagnetic radiation or for generating current or voltage. The optically passive layer can, for example, be transparent.

[0024] In various embodiments, a method for manufacturing an optoelectronic component, for example, the optoelectronic component described above, is provided. In this method, a transparent support is provided. For example, the support is formed. The transparent first electrode of the optoelectronic layer structure is formed over the support. The optically functional layer structure of the optoelectronic layer structure is formed over the first electrode. The second electrode of the optoelectronic layer structure is formed over the optically functional layer structure. On the side of the optically functional layer structure facing away from the support, a mirror region is formed, which is reflective at least when viewed from the support.The intermediate layer between the substrate and the mirror area is designed such that the optical thickness of the intermediate layer is greater than the coherence length of the external light.

[0025] If the mirror region is formed by the second electrode, then the mirror region is formed together with the second electrode, i.e., simultaneously. In other words, the mirror region is formed during the formation of the second electrode.

[0026] In various embodiments, an optoelectronic component is provided. The optoelectronic component comprises a transparent substrate, an optically active region, and an optically passive region. An optoelectronic layer structure is formed within the optically active region. This layer structure includes: a first electrode, which is transparent and formed over the substrate; an optically functional layer structure, formed over the first electrode; and a second electrode, formed over the optically functional layer structure. On a side of the optically functional layer structure facing away from the substrate, a mirrored region is formed, which is reflective at least when viewed from the substrate.In the optically passive area, a mirror layer is formed above the substrate, which is reflective at least when viewed from the substrate.

[0027] No optoelectronic layer structure is formed between the reflective layer and the substrate. The reflective layer can, for example, be formed directly on the substrate. The reflective layer can, for example, be formed in the optically passive region instead of the first electrode, or the reflective layer can be formed by the second electrode. For example, the optically active region can be configured corresponding to the optically active region described above. In the optically passive region, the first electrode and the optically functional layer structure can be omitted, or the first electrode and / or the optically functional layer structure can be formed as dummy layers, for example, as non-functional layers, above the reflective layer.The reflective layer over the substrate, without an intervening optoelectronic layer structure, ensures that a perfect mirror can be formed in the optically passive region, regardless of the operating state of the optoelectronic component. Only in the optically active region can the disadvantages described above occur when the optoelectronic component is switched off. However, these disadvantages can be accepted depending on the intended application of the optoelectronic component, as the corresponding mirror assembly with its reflective and luminescent surfaces can be manufactured very simply and cost-effectively.

[0028] In various embodiments, an organic layer structure is formed in the optically passive region above the mirror layer. This can contribute to the simple and / or cost-effective fabrication of the optoelectronic component, since only the mirror layer needs to be structured and / or selectively formed over the substrate, and subsequently the optoelectronic layer structure can simply be formed across the entire substrate with the mirror layer.

[0029] In various embodiments, the substrate extends seamlessly over both the optically active and the optically passive areas. In other words, the optically active and the optically passive areas are built on a single substrate. The optoelectronic component, for example, a mirror device with a reflective surface and a light-emitting surface, therefore does not need to be assembled from individual parts, particularly separately manufactured optically active and optically passive elements, but can be manufactured using a closed, simple, and / or cost-effective process.

[0030] In various embodiments, a method for fabricating an optoelectronic component, for example, the optoelectronic component described above, is provided. The transparent substrate is provided. The optically active region and the optically passive region are formed. In the optically active region, an optoelectronic layer structure is formed by forming a transparent first electrode of the optoelectronic layer structure over the substrate, an optically functional layer structure of the optoelectronic layer structure over the first electrode, and a second electrode of the optoelectronic layer structure over the optically functional layer structure. On a side of the optically functional layer structure facing away from the substrate, a mirror region is formed, which is reflective at least when viewed from the substrate.In the optically passive area, a reflective layer is formed over the substrate, which is reflective at least when viewed from the substrate.

[0031] In particular, no optoelectronic layer structure is formed between the mirror layer and the substrate. The mirror layer can, for example, be formed directly on the substrate. The optoelectronic layer structure can, for example, be selectively formed in the optically active region. The optoelectronic layer structure can, for example, be formed in the optically active region by means of a printing process.

[0032] In various embodiments, a mirror device is provided that has a reflective surface for viewing a reflection and a luminescent surface for emitting light, for example, the mirror device mentioned above. The mirror device includes the optoelectronic component. The reflective surface is formed by the optically passive area, and the luminescent surface is formed by the optically active area. The mirror device can be used, for example, as a mirror, such as a makeup or shaving mirror, for example, in a car or bathroom, or as a portable pocket mirror.

[0033] Exemplary embodiments of the invention are shown in the figures and are explained in more detail below.

[0034] They show:

[0035] Fig. 1 a conventional optoelectronic component;

[0036] Fig. 2 a top view of a conventional optoelectronic component;

[0037] Fig. 3 a sectional view of the conventional optoelectronic component according to Fig. 2;

[0038] Fig. 4 several diagrams showing the reflection of light incident on the conventional optoelectronic device for different viewing angles depending on the wavelength of the incident light;

[0039] Fig. 5 a sectional view of an embodiment of an optoelectronic component;

[0040] Fig. 6 several diagrams showing the reflection of light into the optoelectronic component according to Fig. 5 incident light for different viewing angles depending on the wavelength of the incident light;

[0041] Fig. 7 a sectional view of an embodiment of an optoelectronic component;

[0042] Fig. 8 a sectional view of an embodiment of an optoelectronic component;

[0043] Fig. 9 a sectional view of an embodiment of an optoelectronic component in a first state during a method for manufacturing the optoelectronic component;

[0044] Fig. 10 a sectional view of an embodiment of an optoelectronic component in a second state during the method for manufacturing the optoelectronic component;

[0045] Fig. 11 a sectional view of an embodiment of an optoelectronic component;

[0046] Fig. 12 a top view of an embodiment of an optoelectronic component;

[0047] Fig. 13 a top view of an embodiment of an optoelectronic component;

[0048] Fig. 14 a cross-sectional view of a layer structure of an embodiment of an optoelectronic component.

[0049] The following detailed description refers to the accompanying drawings, which form part of this description and in which specific embodiments are shown for illustration purposes, illustrating how the invention can be implemented. In this respect, directional terminology such as "top," "bottom," "front," "back," "anterior," "rear," etc., is used with reference to the orientation of the described figure(s). Since components of embodiments can be positioned in a number of different orientations, the directional terminology serves for illustration and is in no way limiting. It is understood that other embodiments may be used and structural or logical modifications may be made without deviating from the scope of protection of the present invention.It is understood that the features of the various embodiments described herein can be combined with one another, unless specifically stated otherwise. The following detailed description is therefore not to be interpreted as restrictive, and the scope of protection of the present invention is defined by the appended claims.

[0050] Within the scope of this description, the terms "connected," "attached," and "coupled" are used to describe both direct and indirect connections, direct or indirect links, and direct or indirect couplings. In the figures, identical or similar elements are labeled with identical reference symbols where appropriate.

[0051] An optoelectronic component can be either an electromagnetic radiation emitter or an electromagnetic radiation absorber. An electromagnetic radiation absorber could be, for example, a solar cell. An electromagnetic radiation emitter could be, for example, an electromagnetic radiation emitting semiconductor device and / or be configured as an electromagnetic radiation emitting diode, an organic electromagnetic radiation emitting diode, an electromagnetic radiation emitting transistor, or an organic electromagnetic radiation emitting transistor. The radiation could be, for example, visible light, ultraviolet light, and / or infrared light.In this context, the electromagnetic radiation-emitting component can be, for example, a light-emitting diode (LED), an organic light-emitting diode (OLED), a light-emitting transistor, or an organic light-emitting transistor. The light-emitting component can be part of an integrated circuit in various embodiments. Furthermore, multiple light-emitting components can be provided, for example, housed in a common package.

[0052] Fig. Figure 1 shows a conventional optoelectronic component 1 The conventional optoelectronic component 1 has a carrier 12 , for example, a substrate. On the carrier 12 An optoelectronic layer structure is formed. The substrate 12 is transparently trained. That the carrier12 or one of the layers explained in more detail below is transparent or is formed transparently, for example, this means that the carrier 12 or the corresponding layer is transparent or permeable at least to light in the visible spectral range.

[0053] The optoelectronic layer structure has a first electrode layer. 14 on, which marks an initial contact point 16 , a second contact section 18 and a first electrode 20 exhibits the second contact section 18 is with the first electrode 20 The optoelectronic layer structure is electrically coupled. The second contact section 18 and the first electrode 20 They can, for example, be formed in one piece. The first electrode 20 is from the first contact section 16 by means of an electrical insulation barrier 21electrically insulated. Above the first electrode 20 is an optically functional layered structure 22 , for example, an organic functional layer structure, the optoelectronic layer structure. The optically functional layer structure 22 For example, it may have one, two, or more sublayers, as discussed further below in relation to Fig. 13 explained in more detail. Regarding the organic functional layer structure 22 is a second electrode 23 the optoelectronic layer structure is formed, which is electrically connected to the first contact section 16 is coupled. The first contact section 16 and the second electrode 23 They can, for example, be formed in one piece. The first electrode 20 It serves, for example, as the anode or cathode of the optoelectronic layer structure. The second electrode 23Corresponding to the first electrode, it serves as the cathode or anode of the optoelectronic layer structure.

[0054] Above the second electrode 23 and partly above the first contact point 16 and partially above the second contact point 18 is an encapsulation layer 24 The optoelectronic layer structure is formed, which encapsulates the optoelectronic layer structure. In the encapsulation layer 24 are above the first contact point 16 a first recess in the encapsulation layer 24 and above the second contact point 18 a second recess in the encapsulation layer 24 formed. In the first recess of the encapsulation layer 24 is a first point of contact 32 exposed and in the second recess of the encapsulation layer 24 is a second contact area 34exposed. The first contact area 32 It is used for electrically contacting the first contact section. 16 and the second contact area 34 It serves to electrically contact the second contact section. 18 .

[0055] Above the encapsulation layer 24 is an adhesive layer 36 trained. Above the adhesive layer 36 is a cover 38 trained. The adhesive layer 36 used to attach the cover 38 at the encapsulation layer 24 The cover 38 It serves to protect the conventional optoelectronic component. 1 , for example, against mechanical forces, such as an external impact or blow. Furthermore, the cover can 38 to distribute and / or dissipate heat that is present in the conventional optoelectronic component 1is produced. For example, the glass of the cover can be 38 to serve as protection against external influences and the metal layer of the cover 38 can be used to distribute and / or remove the emissions generated during the operation of the conventional optoelectronic component 1 The heat generated is used.

[0056] The adhesive layer 36 For example, it can be applied in a structured manner to the encapsulation layer. 24 to be applied. That the adhesive layer 36 structured on the encapsulation layer 24 can be applied, for example, by the adhesive layer. 36 already has a predetermined structure upon application. For example, the adhesive layer 36 applied in a structured manner using a dispensing or printing process.

[0057] The conventional optoelectronic component 1For example, it can be separated from a composite of building elements by removing the carrier 12 along its Fig. The 3 outer edges shown on the side are scored and then broken, and by removing the cover 38 equally along their in Fig. The outer edges shown in Figure 1 are scored and then broken. This scoring and breaking process removes the encapsulation layer. 24 via the contact areas 32 , 34 exposed. The first contact area can be seen below. 32 and the second contact area 34 in a further process step they are exposed, for example by means of an ablation process, such as laser ablation, mechanical scratching or an etching process.

[0058] The second electrode 23 can be designed to be reflective, so that the conventional optoelectronic component 1, if it generates electromagnetic radiation, it is configured as a bottom emitter. In this context, the conventional optoelectronic component emits 1 In the on state, the electromagnetic radiation, for example visible light, is directed towards the second electrode. 23 , from which it extends towards the carrier 12 is reflected, and directly towards the carrier 12 The electromagnetic radiation is then converted into Fig. 1 downwards from the conventional optoelectronic component 1 emitted. In the off state, if the conventional optoelectronic component is used. 1 is operated as a light fixture, or, if the conventional optoelectronic component 1 When operated as a solar cell, regardless of the operating state, the conventional optoelectronic component 1 from in Fig. 1. Viewed from below due to the reflective second electrode 23It has a reflective appearance and can be used as a mirror.

[0059] Fig. Figure 2 shows a top view of a conventional optoelectronic component. 1 , which is designed as a mirror device with a mirror surface and with an integrated light source, in particular with an integrated light source. The conventional optoelectronic component 1 has an optically active area 40 , for example, a first optically active area 40 , in particular an optically active edge region, and an optically passive region 42 , in particular an optically passive interior area. The optically active area 40 surrounds the optically passive area 42 Alternatively, the optically active area can be used. 40one, two or more optically active sub-areas, for example, further optically active areas and / or second optically active areas, which may be separated from each other and / or which may extend over the area of ​​the conventional optoelectronic component. 1 They can be distributed. For example, the conventional optoelectronic component 1 several rounded, for example circular or oval, or polygonal, for example square or rectangular, sub-areas and / or the optically active sub-areas can be arranged in a frame shape, for example.

[0060] Fig. Figure 3 shows a cross-sectional view of the conventional optoelectronic component. 1 according to Fig. 2.

[0061] A layered structure of the conventional optoelectronic component 1 can, for example, largely reflect the layered structure of the structure related to Fig. 1 explained conventional optoelectronic component 1 correspond. In the case of the Fig. 3 conventional optoelectronic components shown 1 are the contact sections 16 , 18 and the contact areas 32 , 34 as well as the insulator area 21 not shown. These sections or areas may, for example, be located outside of the area shown. Fig. The cut edge shown in section 3 should be formed, or the electrodes should be formed. 20 , 23 can, for example, be done via one side of the conventional optoelectronic component 1 be contacted, on which the second electrode 23 is trained or through the covering 38 through it. The optically functional layered structure 22 and the first electrode 20 They can, for example, have a total thickness of 200 to 800 nm.

[0062] The second electrode 23It is designed to be reflective, so that ambient light entering from below is reflected into the conventional optoelectronic component. 1 occurs, at a mirror area 44 , which in this embodiment is from the second electrode 23 The image is formed and mirrored. Alternatively, the second electrode can be used. 23 also be transparently formed and on the second electrode 23 A reflective layer, not shown, may be formed, which then corresponds to the mirror area. 44 features. For example, the cover 38 that have or form a reflective layer.

[0063] At the in Fig. 3 conventional optoelectronic components shown 1 are the covers 38 , the adhesive layer 36 and the encapsulation layer 24These elements are not shown for the sake of clarity. Optionally, they can be formed individually or together. For example, the encapsulation layer 24 be designed, for example mirror-like, however, the adhesive layer can be affected. 36 and the cover 38 can be dispensed with.

[0064] The optoelectronic layer structure of the conventional optoelectronic device 1 is at transitions 43 from the optically active areas 40 towards the optically inactive area 42 at least partially interrupted. For example, the first electrode may be 20 and / or the second electrode 23 or the intermediate optically functional layer structure 22 at the transitions 43 from the optically active area 40 to the optically inactive area 42The electrical contact of the conventional optoelectronic component is interrupted. 1 now exclusively in the optically active area 40 , so due to the interruption at the crossings 43 the optoelectronic layer structure in the optically passive region 42 It is not powered and therefore does not light up when the lamp is in operation. In the case of the conventional optoelectronic component 1 If a solar cell is interrupted, the current generated in the optoelectronic layer structure is not carried away. The transitions 43 can be achieved, for example, by means of a selectively etched first and / or second electrode 20 , 23 or by subsequent laser structuring of the first and / or second electrode 20 , 23 be generated.

[0065] Regardless of the operating state of the conventional optoelectronic component 1 In both the on and off states, light, for example ambient light, falls from different viewing directions. 46 and from correspondingly different perspectives into the conventional optoelectronic component 1 one. In the on state, the conventional optoelectronic component generates 1 in the optically active area 40 Light and shines the light in the direction towards the carrier 12 and in the direction towards the mirror area 44 off, whereby the mirror area 44 the generated light towards the carrier 12 reflected and emitted by the carrier 12 the light into the surrounding area. In the optically passive range 42 No light is generated, regardless of the operating state. The conventional optoelectronic component 1 has in the optically passive area42 Regardless of the operating state, it exhibits a reflective appearance. The conventional optoelectronic component can therefore be used as a mirror device with a reflective surface and an integrated luminescent surface.

[0066] The part of the optoelectronic layer structure between a substrate 12 side facing the first electrode 20 and one of the carrier 12 the first side facing the second electrode 23 forms an optical cavity 48 , which can also be described as a microcavity. In the conventional optoelectronic component 1 The optical layer thickness lies in a direction perpendicular to a surface of the substrate. 12 , on which the first electrode 20 is formed in an area where there is also a coherence length of the external light coming from the different viewing directions. 46 into the conventional optoelectronic component1 This is due to the difference in refractive index between the material of the support. 12 and the material of the optoelectronic layer structure and due to the mirror area 44 The incident ambient light interferes with the reflected ambient light. The interference is wavelength-selective and dependent on the viewing angle. This results in an appearance similar to that of a conventional optoelectronic component. 1 and / or a conventional optoelectronic component 1 The reflected image depends on the viewing direction. 46 The monitor reproduces colors with varying degrees of accuracy and intensity. This leads to a distortion and / or blurred representation of the image or reflection, and to a color cast.

[0067] Fig. Figure 4 shows several diagrams illustrating the reflection of light incident on the conventional optoelectronic device as a function of its wavelength at different viewing angles. The diagrams are generated using the conventional optoelectronic device. 1 The measurements were recorded. The wavelengths of the incident light are plotted on the x-axis of the diagrams, and the reflectivity is plotted on the y-axis. First curves 50 refer to the total reflection of transverse electric and transverse magnetic light waves, second curves 52 refer to the reflection of transverse electric light waves and third curves 54 refer to the reflection of transverse magnetic light waves.

[0068] Out of Fig. Figure 4 shows that, at all viewing angles, the reflectivity is strongly dependent on the wavelength of the incident light. This means that different colors are reflected to varying degrees at different viewing angles, resulting in a color cast and distortion of the reflected image. Furthermore, the diagrams show that, particularly at relatively large viewing angles, such as 45°, 60°, or 75°, the reflectivity also differs between the transverse electric and transverse magnetic wavelengths. For example, the reflectivity in the blue and green spectral ranges is relatively low. The reflectivity drops off significantly at approximately 500 nm. Additionally, the orange and / or red spectral ranges are relatively independent of the viewing angle.This causes the reflection to have a different color tint depending on the viewing angle, which is perceived negatively and / or unattractively by a human observer.

[0069] Fig. Figure 5 shows an embodiment of an optoelectronic component. 10 , which, for example, largely corresponds to the conventional optoelectronic component explained above. 1 can correspond. The optoelectronic component 10 has an intermediate layer 60 up. The intermediate layer 60 has an optical layer thickness that is greater than the coherence length of the incident light.

[0070] The incident external light in this context is visible light. Visible light lies within a wavelength range of 350 nm to 850 nm, for example, 370 nm to 800 nm, or 400 nm to 750 nm. The optical layer thickness can, for example, be greater than the coherence length of the incident light in the medium. The optical layer thickness is calculated as the quotient of the wavelength of the incident light and the refractive index of the intermediate layer. 60 The coherence length of the light (in the medium for n not equal to 1) can be determined using the formula F1 mentioned above.

[0071] Furthermore, D > L, meaning the optical layer thickness must be greater than the coherence length of the external, for example, incident, light. The larger n is, the smaller the coherence length L in the medium becomes, and the smaller the optical layer thickness D can be, and, in other words, the more wavelengths fit into the intermediate layer.60 For example, the coherence length of visible light in air can be assumed to be approximately L = 1 μm. For n = 1.8, D > L / n = 555 nm can then be. For n = 1.5, for example, D > 666 nm. If the exact coherence length and / or the nature of the external light are unknown, the intermediate layer can be 60 It can be formed with a particularly large layer thickness. For example, the layer thickness D can then be 1.5 μm.

[0072] The intermediate layer 60 For example, it may have the same refractive index, or at least approximately the same refractive index, as the optoelectronic layer structure, such as the first electrode. 20 and / or the optically functional layer structure 22 For example, the optoelectronic layer structure 22 and / or the first electrode 20have a refractive index in a range, for example, from 1.6 to 1.9, or from 1.7 to 1.8. Accordingly, the intermediate layer can 60 have a refractive index in a range, for example, from 1.6 to 1.9 or from 1.7 to 1.8. The carrier 12 For example, it can have a refractive index of approximately 1.5 and a thickness of 0.2 to 2 mm.

[0073] The thickness of the intermediate layer 60 The thickness can then be greater than 1.5 μm, for example. In particular, for external light at approximately 555 nm, an assumed spectral width of 50 nm, and a refractive index of n = 1.7, the minimum thickness of the interlayer is 1.5 μm. 60 External light is light that is not emitted by the optoelectronic component. 10 is generated. For example, external light is light that falls on the optoelectronic component from the outside. 10external light can be, for example, natural light, such as sunlight, or artificial light, such as lighting in an enclosed space, such as a bathroom or a vehicle, such as interior car lighting, for example, "ambient light". Thus, the thickness of the intermediate layer can be 60 The layer thickness depends on the intended use environment. For example, it may be adapted to the interior lighting of a motor vehicle in which the optoelectronic component is installed. 10 is to be used. Alternatively, the layer thickness can be adapted to the ambient lighting of a room in which the optoelectronic component is located. 10 is to be used. Furthermore, the layer thickness can be adapted to sunlight. If the later use of the optoelectronic component 10If the required layer thickness is unknown at the time of manufacture or is to remain undisclosed, it can, for example, be adapted to sunlight. Adapting the layer thickness to light, such as artificial or natural light, can mean, for instance, that the layer thickness is adapted to the spectrum of the light and / or the coherence length of the light.

[0074] The intermediate layer 60 For example, it can have a transparent lacquer with embedded TiO2 nanoparticles. The size of the nanoparticles can be, for example, in a range from 1 nm to 100 nm, from 25 nm to 75 nm, or approximately 50 nm, so that no scattering of the incident light occurs and thus a milky appearance is produced in the off state.

[0075] By introducing the intermediate layer 60 , which have the same refractive index as the first electrode 20and the optoelectronic layer structure, the microcavity 48 Cancelled. The intermediate shift 60 With its specific optical layer thickness, it ensures that the incident light does not interfere with itself at all or only negligibly, so that the quality of the reflected image no longer depends on the color and / or the viewing angle. This results in the entire optoelectronic component 10 , i.e., in the optically active range 40 and in the optically passive range 42 , can provide a homogeneous and viewing-angle-independent reflection in the off state.

[0076] Fig. Figure 6 shows several diagrams illustrating the reflection of the light onto the optoelectronic component. 10 The diagrams show the effects of incident light depending on its wavelength at different viewing angles. The diagrams were created using an optoelectronic component. 10 according to Fig. 5 were recorded. The wavelengths of the incident light are plotted on the x-axis of the diagrams, and the reflectivity is plotted on the y-axis. The first curves 50 refer to the total reflection of transverse electric and transverse magnetic light waves, the second curves 52 refer to the reflection of transverse electric light waves and the third curves 54 refer to the reflection of transverse magnetic light waves.

[0077] Out of Fig. Figure 6 shows that the reflectivity is relatively homogeneous across the entire wavelength range of the external light. Furthermore, the reflectivity is independent of the viewing angle. Only between the transverse electric and transverse magnetic light waves does a slight difference occur at large viewing angles, but this difference is barely perceptible or not at all to the human eye. As a result, no color cast is discernible to the human eye at different viewing angles, and the reflection is perceived as a pleasing image.

[0078] Fig. Figure 7 shows an embodiment of the optoelectronic component. 10 , which, for example, largely corresponds to the one relating to Fig. 5 explained optoelectronic components 10 can correspond. The optoelectronic component 10 The intermediate layer, in particular, exhibits 60with the optical layer thickness described above. Furthermore, the optoelectronic component has 10 in the optically passive areas 42 an optically passive layer 62 on. The optically passive layer 62 causes the transitions 43 towards the optically active areas 40 , wherein the optically passive layer 62 in the optically passive range 42 at least parts of the optoelectronic layer structure are replaced. For example, the optically passive material can be replaced. 62 in the optically passive range 42 instead of the optically functional layered structure 22 and / or instead of the second electrode 22 be trained.

[0079] Between the optically passive areas 42 is another optically active area 41 trained. In this way, within the optically passive range, 42one, two or more additional optically active areas 41 They can be formed in virtually any shape. This can, for example, make it possible to illuminate a letter, several letters, a word mark, and / or a graphic representation, such as an image, a symbol, or a logo, within the reflective surface of the optoelectronic component. 10 to represent.

[0080] The optically passive layer 62 For example, it may have a transparent lacquer or be formed from one. The lacquer can also contribute to the optoelectronic component's durability. 10 in the on state in the optically passive range 42 does not light up.

[0081] Fig. Figure 8 shows a sectional view of an embodiment of an optoelectronic component. 10 , which, for example, largely corresponds to one of the optoelectronic components explained above. 10This can correspond to the above. In particular, the active areas can 40 of the optoelectronic component 10 the active areas 40 of the optoelectronic component described above 10 be appropriately trained.

[0082] The optoelectronic component 10 exhibits in its optically passive range 42 no optically functional layered structure 22 and / or no first electrode 20 in contrast, a mirror layer is applied directly to the substrate. 12 trained so that the mirror area 44 at the interface between the mirror layer and the substrate 12 is formed. For example, the mirror layer can be formed by the second electrode. 23 especially from an extension of the second electrode 23 be educated.

[0083] The optoelectronic component 10can be produced, for example, by the first electrode 20 and the optically functional layered structure 22 in the optically active area 40 They can be applied selectively, for example using a printing process. Finally, the second electrode can then be applied over a large area above the optically active region. 40 and the optically inactive area 42 are formed, whereby the mirror layer is connected to the mirror area 44 is formed. In the optically passive range 42 Therefore, no microcavity is formed and no unsightly specular reflections are caused there. In the optically passive region. 42 Thus, a perfect mirror is formed. However, when viewing a reflection in the optoelectronic component, an error can occur. 10 in the peripheral area, for example in the optically active area 40A slight distortion and / or color distortion may occur. This is because, in this embodiment, the mirror surface and the luminous surface are manufactured simultaneously on the same substrate using a single process. 12 The optoelectronic component can be trained 10 however, they can be trained in a particularly simple and / or cost-effective way.

[0084] Fig. Figure 9 shows a sectional view of an exemplary embodiment of an optoelectronic component. 10 in a first state, for example during a process for manufacturing the optoelectronic component 10 In the first state, there is a mirror layer. 68 , which the mirror area 44 exhibits, on the carrier 12 formed. On part of the mirror layer 68 is an etching stop 64 , for example, a protective lacquer is formed. The mirror layer can then be applied. 68 outside the etching stop64 removed, for example in a chemical and / or physical etching process.

[0085] Fig. Figure 10 shows the optoelectronic component 10 according to Fig. 9 in a second state, for example during the process of manufacturing the optoelectronic component 10 In the second state, the optoelectronic layer structure covers the entire substrate. 12 and the mirror layer 68 formed due to the mirror layer 68 in the interior of the carrier 12 is the optically functional layered structure 22 between the mirror layer 68 and the second electrode 22 However, it is not active, which is why only the optically functional layer structure is visible. 22 outside the mirror layer 68 , especially in the optically active area 40 Light is produced in the on state.

[0086] In the optically passive range 42 Therefore, no microcavity is formed and no unsightly specular reflections are caused there. In the optically passive region. 42 Thus, a perfect mirror is formed. However, even in this embodiment, distortions can occur in the optically active area. 40 A color distortion or color cast depending on the viewing angle may occur, however, this optoelectronic component is also 10 Can be manufactured simply and cost-effectively in a single process.

[0087] The first electrode 20 and the mirror layer 44 They can be electrically coupled to each other. Furthermore, the mirror layer can 44 It must be electrically conductive. For example, the mirror layer can be... 44 contain or be formed from electrically conductive material.

[0088] Fig. Figure 11 shows a sectional view of an embodiment of an optoelectronic component. 10 , which, for example, largely corresponds to one of the optoelectronic components explained above. 10 can correspond. The optoelectronic component 10 indicates the further optically active area 41 on. The further optically active area 41 can, for example, be completely or partially removed from the optically passive area 42 be surrounded by the optically active area. 41 For example, it can be used in operation as a luminous island in the optically passive area. 41 be trained. The further optically active area 41 This can be, for example, a recess, such as a hole in the mirror layer. 44 be formed. The current flow to the further optically active area 41 can, for example, be done via the mirror layer 44This can occur, provided that it is electrically conductive. In the boundary area between the mirror layer 44 and the first electrode 20 A step may be formed. To prevent this step from causing a short circuit, it may be coated with an electrically conductive and transparent passivation varnish and / or planarized. Furthermore, the recess in the mirror layer may 44 It may be filled with a filler, for example, a passivating varnish. A transparent electrode for operating the further optically active area can be formed above the filler and beneath the optically functional layer structure.

[0089] Fig. Figure 12 shows a top view of an embodiment of an optoelectronic component. 10 , which in cross-sectional view, for example, according to one of the optoelectronic components explained above. 10may be trained, for example according to the in Fig. 7 shown optoelectronic component 10 Outside the optically passive range 42 is the optically active area 40 , in particular a first optically active region is formed. Within the optically passive region 42 is another optically active area 41 , in particular a second optically active area, which in this embodiment is star-shaped. Alternatively, the further optically active area can be 41 However, they can also be designed differently and may, for example, feature letters, symbols, lettering, graphics or a logo.

[0090] Fig. Figure 13 shows an embodiment of an optoelectronic component. 10 , which in cross-sectional view, for example, according to one of the optoelectronic components explained above. 10can be formed. The optoelectronic component 10 In plan view, it has a rounded, especially circular, shape. Alternatively, the optoelectronic component can be 10 for example, it may be oval in shape.

[0091] Fig. Figure 14 shows a detailed cross-sectional view of a layer structure of an embodiment of an optoelectronic component, for example the optoelectronic component described above. 10 , where the optically passive area 42 not shown in this detailed view. The optoelectronic component 10 is configured as a bottom emitter.

[0092] The optoelectronic component 10 indicates the carrier 12 and an active area above the carrier 12 up. Between the carrier 12A first barrier layer (not shown), for example a first barrier thin film, can be formed in the active region. The active region contains the first electrode. 20 , the organic functional layer structure 22 and the second electrode 23 The encapsulation layer is located above the active area. 24 formed. The encapsulation layer 24 It can be formed as a second barrier layer, for example as a second barrier thin film. Above the active area and, if applicable, above the encapsulation layer. 24 , is the cover 38 arranged. The cover 38 can be achieved, for example, by means of an adhesive layer 36 on the encapsulation layer 24 be arranged.

[0093] The active region is an electrically and / or optically active area. For example, the active region is the area of ​​the optoelectronic component.10 , in which electric current is used to operate the optoelectronic component 10 flows and / or in which electromagnetic radiation is generated or absorbed.

[0094] The organic functional layer structure 22 can have one, two or more functional layer structure units and one, two or more intermediate layers between the layer structure units.

[0095] The carrier 12 is transparently trained. The carrier 12 It serves as a carrier element for electronic elements or layers, for example, light-emitting elements. The carrier 12 The substrate may, for example, consist of or be made of glass, quartz, and / or a semiconductor material or any other suitable material. Furthermore, the substrate may 12The plastic may consist of or be formed from a plastic film or a laminate containing one or more plastic films. The plastic may contain one or more polyolefins. Furthermore, the plastic may contain polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN). The carrier 12 It may contain or be made of a metal, for example copper, silver, gold, platinum, iron, or a metal compound, for example steel. The carrier 12 can be designed as a metal foil or a metal-coated foil. The carrier 12 It can be part of a mirror structure or form one. The support 12 It may have a mechanically rigid area and / or a mechanically flexible area, or be designed in this way.

[0096] The first electrode 20It can be configured as either an anode or a cathode. The first electrode 20 It can be translucent or transparent. The first electrode 20 It comprises an electrically conductive material, for example, metal and / or a transparent conductive oxide (TCO), or a stack of multiple layers comprising metal or TCOs. The first electrode 20 For example, it can have a layer stack of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.

[0097] Metals such as Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or alloys of these materials, can be used.

[0098] Transparent conductive oxides (TCOs) are transparent, conductive materials, for example, metal oxides such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). Besides binary metal-oxygen compounds, such as ZnO, SnO₂, or In₂O₃, ternary metal-oxygen compounds, such as AlZnO, Zn₂SnO₄, CdSnO₃, ZnSnO₃, MgIn₂O₄, GaInO₃, Zn₂In₂O₅, or In₄Sn₃O₁₂, or mixtures of different transparent conductive oxides, also belong to the group of TCOs.

[0099] The first electrode 20 Alternatively or additionally to the aforementioned materials, it can comprise: networks of metallic nanowires and particles, for example made of silver, networks of carbon nanotubes, graphene particles and layers, and / or networks of semiconducting nanowires. Alternatively or additionally, the first electrode can 20one of the following structures, or composed of them: a network of metallic nanowires, for example made of Ag, combined with conductive polymers; a network of carbon nanotubes combined with conductive polymers; and / or graphene layers and composites. Furthermore, the first electrode can 20 contain electrically conductive polymers or transition metal oxides.

[0100] The first electrode 20 For example, it can have a layer thickness in a range of 10 nm to 500 nm, for example from less than 25 nm to 250 nm, for example from 50 nm to 100 nm.

[0101] The first electrode 20 can be coupled to a first electrical connection, for example with the first contact section 16, to which a first electrical potential can be applied. The first electrical potential can be provided by an energy source (not shown), for example, a current source or a voltage source. Alternatively, the first electrical potential can be applied to the carrier 12 be installed and the first electrode 20 about the carrier 12 can be supplied indirectly. The first electrical potential can be, for example, the ground potential or another predetermined reference potential.

[0102] The organic functional layer structure 22 It may include a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer and / or an electron injection layer.

[0103] The hole injection layer can be placed on or above the first electrode. 20The injection layer may be formed from or composed of one or more of the following materials: HAT-CN, Cu(I)pFBz, MoOx, WOx, VOx, ReOx, F4-TCNQ, NDP-2, NDP-9, Bi(III)pFBz, F16CuPc; NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine); beta-NPB N,N'-Bis(naphthalen-2-yl)-N,N'-bis(phenyl)benzidine); TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)benzidine); Spiro TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)benzidine); Spiro-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-spiro); DMFL-TPD N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-dimethyl-fluorene); DMFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-dimethyl-fluorene); DPFL-TPD (N,N-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-diphenyl-fluorene); DPFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-diphenylfluorene); Spiro-TAD (2,2',7,7'-Tetrakis(n,n-diphenylamino)-9,9'-spirobifluorene); 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluorene;9,9-Bis[4-(N,N-bis-naphthalen-2-yl-amino)phenyl]-9H-fluorene; 9,9-Bis[4-(N,N'-bis-naphthalen-2-yl-N,N'-bis-phenyl-amino)-phenyl]-9H-fluorine; N,N'-bis(phenanthren-9-yl)-N,N'-bis(phenyl)-benzidine; 2,7-Bis[N,N-bis(9,9-spiro-bifluorene-2-yl)-amino]-9,9-spiro-bifluorene; 2,2'-Bis[N,N-bis(biphenyl-4-yl)amino]9,9-spiro-bifluorene; 2,2'-Bis(N,N-di-phenyl-amino)9,9-spiro-bifluorene; Di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexane; 2,2',7,7'tetra(N,N-di-tolyl)amino-spiro-bifluorene; and / or N,N,N',N'-tetra-naphthalen-2-yl-benzidine.;

[0104] The hole injection layer can have a thickness in a range of approximately 10 nm to approximately 1000 nm, for example in a range of approximately 30 nm to approximately 300 nm, for example in a range of approximately 50 nm to approximately 200 nm.

[0105] The hole transport layer may be formed on or above the hole injection layer. The hole transport layer may consist of or be composed of one or more of the following materials: NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine); beta-NPB N,N'-bis(naphthalen-2-yl)-N,N'-bis(phenyl)-benzidine); TPD (N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidine); Spiro TPD (N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidine); Spiro-NPB (N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-spiro); DMFL-TPD N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-dimethyl-fluorene). DMFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-dimethyl-fluorene); DPFL-TPD (N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-diphenyl-fluorene); DPFL-NPB (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-diphenyl-fluorene); Spira-TAD (2,2',7,7'-Tetrakis(n,n-diphenylamino)-9,9'-spirobifluorene); 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluorene; 9,9-Bis[4-(N,N-bis-naphthalen-2-yl-amino)phenyl]-9H-fluorene;9,9-Bis[4-(N,N'-bis-naphthalen-2-yl-N,N'-bis-phenyl-amino)-phenyl]-9H-fluoro; N,N'bis(phenanthren-9-yl)-N,N'-bis(phenyl)benzidine; 2,7-Bis[N,N-bis(9,9-spiro-bifluorene-2-yl)-amino]-9,9-spiro-bifluorene; 2,2'-Bis[N,N-bis(biphenyl-4-yl)amino]9,9-spiro-bifluorene; 2,2'-Bis(N,N-di-phenyl-amino)9,9-spiro-bifluorene; Di-[4-(N,N-ditolyl-amino)phenyl]cyclohexane; 2,2',7,7'-tetra(N,N-ditolyl)amino-spiro-bifluorene; and N,N,N',N'tetra-naphthalen-2-yl-benzidine;

[0106] The hole transport layer can have a thickness in a range of approximately 5 nm to approximately 50 nm, for example in a range of approximately 10 nm to approximately 30 nm, for example approximately 20 nm.

[0107] One or more emitter layers, for example with fluorescent and / or phosphorescent emitters, can be formed on or above the hole transport layer. The emitter layer can consist of organic polymers, organic oligomers, organic monomers, small organic non-polymeric molecules, or a combination of these materials. The emitter layer can consist of or be composed of one or more of the following materials: organic or organometallic compounds, such as derivatives of polyfluorene, polythiophene, and polyphenylene (e.g.,2- or 2,5-substituted poly-p-phenylenevinylene) and metal complexes, for example iridium complexes such as blue phosphorescent FIrPic (Bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)iridium III), green phosphorescent Ir(ppy)3 (Tris(2-phenylpyridine)iridium III), red phosphorescent Ru (dtb-bpy)3*2(PF6) (Tris[4,4'-di-tert-butyl-(2,2')-bipyridine]ruthenium(III) complex) as well as blue fluorescent DPAVBi (4,4-Bis[4-(di-p-tolylamino)styryl]biphenyl), green fluorescent TTPA (9,10-Bis[N,N-di-(p-tolyl)amino]anthracene) and red Fluorescent DCM2 (4-dicyanomethylene)-2-methyl-6-julolidyl-9-enyl-4H-pyran) can be used as a non-polymeric emitter. Such non-polymeric emitters can be deposited, for example, by thermal evaporation. Alternatively, polymeric emitters can be used, which can be deposited, for example, by a wet chemical process such as spin coating.The emitter materials can be appropriately embedded in a matrix material, for example a technical ceramic or a polymer, such as an epoxy or a silicone.

[0108] The first emitter layer can have a thickness in a range of approximately 5 nm to approximately 50 nm, for example in a range of approximately 10 nm to approximately 30 nm, for example approximately 20 nm.

[0109] The emitter layer can consist of monochromatic or multicolored emitter materials (for example, blue and yellow or blue, green, and red). Alternatively, the emitter layer can have several sublayers that emit light of different colors. By mixing the different colors, the emission of light with a white color impression can result. Alternatively, a converter material can be placed in the beam path of the primary emission generated by these layers. This converter material at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that a white color impression results from the combination of primary and secondary radiation (which is not yet white).

[0110] The electron transport layer can be formed on or above the emitter layer, for example, by being deposited. The electron transport layer can consist of or be formed from one or more of the following materials: NET-18; 2,2',2''-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole); 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP); 8-hydroxyquinolinolatolithium, 4-(naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole; 1,3-bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]benzene; 4,7-Diphenyl-1,10-phenanthroline (BPhen); 3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole; bis(2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminum; 6,6'-Bis[5-(biphenyl-4-yl)-1,3,4-oxadiazo-2-yl]-2,2'-bipyridyl; 2-phenyl-9,10-di(naphthalen-2-yl)anthracene; 2,7-Bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]-9,9-dimethylfluorene; 1,3-Bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene;2-(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline; 2,9-Bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline; Tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane; 1-methyl-2-(4-(naphthalen-2-yl)phenyl)-1H-imidazo[4,5-f][1,10]phenanthroline; Phenyl-dipyrenylphosphine oxides; Naphthalene tetracarboxylic dianhydride or its imides; Perylene tetracarboxylic dianhydride or its imides; and substances based on silols with a silacyclopentadiene unit.

[0111] The electron transport layer can have a thickness in a range of approximately 5 nm to approximately 50 nm, for example in a range of approximately 10 nm to approximately 30 nm, for example approximately 20 nm.

[0112] The electron injection layer can be formed on or above the electron transport layer. The electron injection layer can consist of or be formed from one or more of the following materials: NDN-26, MgAg, Cs₂CO₃, Cs₃PO₄, Na, Ca, K, Mg, Cs, Li, LiF; 2,2',2''-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole); 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP); 8-hydroxyquinolinolatolithium, 4-(naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole; 1,3-Bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]benzene; 4,7-Diphenyl-1,10-phenanthroline (BPhen); 3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole; bis(2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminum; 6,6'-Bis[5-(biphenyl-4-yl)-1,3,4-oxadiazo-2-yl]-2,2'-bipyridyl; 2-phenyl-9,10-di(naphthalen-2-yl)anthracene; 2,7-Bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]-9,9-dimethylfluorene;1,3-Bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene; 2-(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline; 2,9-Bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline; Tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane; 1-methyl-2-(4-(naphthalen-2-yl)phenyl)-1H-imidazo[4,5-f][1,10]phenanthroline; Phenyl-dipyrenylphosphine oxides; Naphthalene tetracarboxylic dianhydride or its imides; Perylene tetracarboxylic dianhydride or its imides; and substances based on silols with a silacyclopentadiene unit.

[0113] The electron injection layer can have a thickness in the range of approximately 5 nm to approximately 200 nm inclusive, for example, in the range of approximately 20 nm to approximately 50 nm, or approximately 30 nm. If the electron injection layer is used as an intermediate layer... 60When used, its optical layer thickness can be chosen depending on the external light and, for example, be chosen to be larger than the coherence length of the external light in the electron injection layer.

[0114] In an organic functional layer structure 22 With two or more organic functional layer structure units, corresponding intermediate layers can be formed between the organic functional layer structure units. The organic functional layer structure units can each be individually configured according to a configuration of the organic functional layer structure described above. 22The intermediate layer can be configured as an intermediate electrode. The intermediate electrode can be electrically connected to an external voltage source. The external voltage source can, for example, provide a third electrical potential at the intermediate electrode. However, the intermediate electrode can also have no external electrical connection, for example, by exhibiting a floating electrical potential.

[0115] The organic functional layer structure unit can, for example, have a layer thickness of a maximum of approximately 3 μm, a layer thickness of a maximum of approximately 1 μm, or a layer thickness of a maximum of approximately 300 nm.

[0116] The optoelectronic component 10Optionally, it may have additional functional layers, for example, arranged on or above one or more emitter layers or on or above the electron transport layer. These additional functional layers can be, for example, internal or external input / output coupling structures that enhance the functionality and thus the efficiency of the optoelectronic device. 10 can be improved further.

[0117] The second electrode 23 can be according to one of the embodiments of the first electrode 20 be trained, with the first electrode 20 and the second electrode 23 They can be formed in the same or differently. The second electrode 23 It can be transparent or reflective. The second electrode 23 It can be configured as either an anode or a cathode. The second electrode 23It may have a second electrical terminal to which a second electrical potential can be applied. The second electrical potential can be provided by the same or a different energy source as the first electrical potential. The second electrical potential can be different from the first electrical potential. For example, the second electrical potential may have a value such that the difference from the first electrical potential is in the range of approximately 1.5 V to approximately 20 V, for example, a value in the range of approximately 2.5 V to approximately 15 V, for example, a value in the range of approximately 3 V to approximately 12 V.

[0118] The encapsulation layer 24 This can also be referred to as thin-film encapsulation. The encapsulation layer 24 It can be formed as a reflective, translucent, or transparent layer. The encapsulation layer24 It forms a barrier against chemical impurities and atmospheric substances, especially water (moisture) and oxygen. In other words, the encapsulation layer is 24 Designed in such a way that it cannot be penetrated, or only to a very limited extent, by substances that could damage the optoelectronic component, such as water, oxygen, or solvents. The encapsulation layer 24 It can be formed as a single layer, a stack of layers, or a layered structure.

[0119] The encapsulation layer 24 may contain or be composed of: aluminium oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminium-doped zinc oxide, poly(p-phenylene terephthalamide), nylon 66, as well as mixtures and alloys thereof.

[0120] The encapsulation layer 24 It can have a layer thickness of approximately 0.1 nm (one atomic layer) to approximately 1000 nm, for example, a layer thickness of approximately 10 nm to approximately 100 nm, for example, approximately 40 nm. The encapsulation layer 24 may contain a high-refractive-index material, for example one or more materials with a high refractive index, for example with a refractive index of at least 2.

[0121] If necessary, the first barrier layer can be applied to the substrate. 12 corresponding to a design of the encapsulation layer 24 be trained.

[0122] The encapsulation layer 24can be formed, for example, by means of a suitable deposition process, e.g., by means of an atomic layer deposition (ALD) process, e.g., a plasma-enhanced atomic layer deposition (PEALD) or a plasma-less atomic layer deposition (PLALD) process, or by means of a chemical vapor deposition (CVD) process, e.g., a plasma-enhanced chemical vapor deposition (PECVD) or a plasma-less chemical vapor deposition (PLCVD) process, or alternatively by means of other suitable deposition processes.

[0123] If necessary, an input or output coupling layer can be applied, for example, as an external film (not shown) on the substrate. 12or as an internal output coupling layer (not shown) in the layer cross-section of the optoelectronic device 10 The input / output coupling layer can be configured as a matrix with scattering centers distributed within it, where the average refractive index of the input / output coupling layer is greater than the average refractive index of the layer from which the electromagnetic radiation is supplied. Furthermore, one or more anti-reflective coatings can be incorporated.

[0124] The adhesive layer 36 It may, for example, contain an adhesive, such as a laminating adhesive, varnish and / or a resin, by means of which the covering 38 for example on the encapsulation layer 24 is arranged, for example, glued on. The adhesive layer 36 It can be reflective, transparent, or translucent. The adhesive layer 36It may, for example, contain particles that scatter electromagnetic radiation, such as light-scattering particles. This can affect the adhesive layer. 36 can act as a diffusing layer and lead to an improvement in chromatic aberration and output efficiency.

[0125] Dielectric scattering particles can be used as light-scattering particles, for example, made of a metal oxide such as silicon dioxide (SiO2), zinc oxide (ZnO), zirconium oxide (ZrO2), indium tin oxide (ITO), indium zinc oxide (IZO), gallium oxide (Ga2Ox), aluminum oxide, or titanium oxide. Other particles may also be suitable, provided they have a refractive index that is compatible with the effective refractive index of the matrix of the adhesive layer. 36The materials used vary, for example, air bubbles, acrylate, or hollow glass spheres. Furthermore, metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or similar materials can be used as light-scattering particles.

[0126] The adhesive layer 36 It can have a layer thickness greater than 1 μm, for example, a layer thickness of several μm. In various embodiments, the adhesive can be a lamination adhesive.

[0127] The adhesive layer 36 may have a refractive index that is smaller than the refractive index of the cover 38 The adhesive layer 36 For example, it may contain a low-refractive-index adhesive, such as an acrylate, which has a refractive index of approximately 1.3. The adhesive layer 36However, it can also have a high-refractive-index adhesive which, for example, contains high-refractive-index, non-scattering particles and has a layer-thickness-averaged refractive index that is approximately the mean refractive index of the organically functional layer structure. 22 This corresponds, for example, to a range of approximately 1.7 to approximately 2.0.

[0128] A so-called getter layer or getter structure, i.e., a laterally structured getter layer (not shown), can be arranged on or above the active area. The getter layer can be translucent, transparent, or opaque. The getter layer can comprise or be formed from a material that absorbs and binds substances harmful to the active area. For example, a getter layer can comprise or be formed from a zeolite derivative. The getter layer can have a thickness greater than approximately 1 μm, for example, a thickness of several μm. In various embodiments, the getter layer can comprise a lamination adhesive or be incorporated into the adhesion promoter layer. 36 be embedded.

[0129] The cover 38 For example, it contains glass and / or metal. The cover 38It can be formed, for example, by a glass cover, a metal foil, and / or a sealed plastic film cover. For example, the cover can 38 It should be made essentially of glass and have a thin metal layer, for example a metal foil, on the glass body. The cover 38 can be mirrored. The cover 38 This can be achieved, for example, by means of a frit bond (glass frit bonding / glass soldering / seal glass bonding) using a conventional glass solder in the geometric boundary regions of the organic optoelectronic device. 10 on the encapsulation layer 24 or be located in the active area. The cover 38 For example, it can have a refractive index (for example at a wavelength of 633 nm) of 1.55.

[0130] The invention is not limited to the specified embodiments. For example, in all embodiments, the adhesive layer can be 36 and / or the cover 38 and / or the encapsulation layer 24 above the second electrode 23 be formed. Furthermore, in all embodiments, the optically active areas can be 40 and the optically passive areas 42 be designed so that, in top view, the optically active areas 40 and / or the optically passive areas 42 Letters, symbols and / or graphics can be displayed.

[0131] Furthermore, all embodiments can be implemented exclusively with an optically active area. 40 and without an optically inactive area 42 be trained. If the optoelectronic component 10If it generates electromagnetic radiation, it can only be used as a light source in the on state and as a mirror in the off state. If the optoelectronic component 10 Since it absorbs electromagnetic radiation to generate electricity, it can be used as a mirror across its entire surface, regardless of the operating state, i.e., in the on-state and in the off-state.

Claims

[1] Optoelectronic component ( 10 ), with – a carrier ( 12 ), who is transparently trained, – having an optoelectronic layer structure, a first electrode ( 20 ), which are above the carrier ( 12 ) is formed and is transparent, forming an optically functional layered structure ( 22 ), which are above the first electrode ( 20 ) is formed, and a second electrode ( 23 ), which is formed above the optically functional layer structure, wherein on one of the carrier ( 12 ) opposite side of the optically functional layer structure ( 22 ) a mirror area ( 44 ) is trained, who is at least trained by the carrier ( 12 ) is designed to be reflective when viewed from the outside, – an intermediate layer ( 60 ), which are between the carrier ( 12 ) and the mirror area ( 44) is formed and has an optical layer thickness that is greater than a coherence length of external light. [2] Optoelectronic component ( 10 ) according to claim 1, wherein the second electrode ( 23 ) is reflective and in which the mirror area ( 44 ) from the second electrode ( 23 ) is formed. [3] Optoelectronic component ( 10 ) according to claim 1, wherein the second electrode ( 23 ) is transparent and in which the second electrode ( 23 ) a mirror layer is formed, from which the mirror area ( 44 ) is formed. [4] Optoelectronic component ( 10 ) according to one of the preceding claims, wherein the optoelectronic layer structure comprises at least one optically active region ( 40 ) and at least one optically passive area ( 42 ) exhibits. [5] Optoelectronic component (10 ) according to claim 4, wherein the optically active area ( 40 ) the optically passive area ( 42 ) surrounds and in which the optically passive area ( 42 ) another optically active area ( 41 surrounds. [6] Optoelectronic component ( 10 ) according to one of claims 4 or 5, wherein the optically active area ( 40 ) from the optically passive area ( 42 ) due to an interruption of at least part of the optoelectronic layer structure at the transition from the active region ( 40 ) to the passive area ( 42 ) is separated. [7] Optoelectronic component ( 10 ) according to claim 6, wherein the optically active area ( 40 ) from the optically passive area ( 42 ) due to an interruption of the first and / or second electrode ( 23 ) during the transition from the active area ( 40 ) to the passive area (42 ) is separated. [8] Optoelectronic component ( 10 ) according to one of claims 4 to 7, wherein the optically active area ( 40 ) from the optically passive area ( 42 ) due to a disruption of the optically functional layer structure ( 22 ) during the transition from the active area ( 40 ) to the passive area ( 42 ) is separated. [9] Optoelectronic component ( 10 ) according to one of claims 1 to 5, wherein in the optically passive area ( 42 ) between the carrier ( 12 ) and the mirror area ( 44 ) instead of at least part of the optoelectronic layer structure, an optically passive layer ( 62 ) is trained. [10] Method for manufacturing an optoelectronic device ( 10 ), in which – a carrier ( 12 ), who is transparently trained, is provided, – a transparent first electrode ( 20 ) an optoelectronic layer structure over the substrate ( 12 ) is trained, – an optically functional layered structure ( 22 ) the optoelectronic layer structure above the first electrode ( 20 ) is trained, – a second electrode ( 23 ) the optoelectronic layer structure above the optically functional layer structure ( 22 ) is trained, whereby on one of the carrier's ( 12 ) opposite side of the optically functional layer structure ( 22 ) a mirror area ( 44 ) is trained, who is at least trained by the carrier ( 12 ) is viewed from a mirrored position, and – an intermediate layer ( 60 ) between the carrier ( 12 ) and the mirror area ( 44 ) is designed such that an optical layer thickness of the intermediate layer ( 60) is larger than a coherence length of external light. [11] Optoelectronic component ( 10 ), with – a carrier ( 12 ), who is transparently trained, – an optically active area ( 40 ) and an optically passive area ( 42 ), an optoelectronic layer structure located in the optically active region ( 40 ) is formed, having a first electrode ( 20 ), which are above the carrier ( 12 ) is formed and is transparent, forming an optically functional layered structure ( 22 ), which are above the first electrode ( 20 ) is formed, and a second electrode ( 23 ), which are above the optically functional layer structure ( 22 ) is trained, whereby on one of the carrier's ( 12 ) opposite side of the optically functional layer structure ( 22 ) a mirror area ( 44) is trained, who is at least trained by the carrier ( 12 ) is viewed from a mirrored position, and – a reflective layer located in the optically passive region ( 42 ) above the support ( 12 ) is trained and is at least trained by the carrier ( 12 ) is formed in a mirrored manner when viewed from the outside. [12] Optoelectronic component ( 10 ) according to claim 11, wherein in the optically passive area ( 42 ) an organic layer structure is formed above the mirror layer. [13] Optoelectronic component ( 10 ) according to one of claims 11 or 12, wherein the carrier ( 12 ) in one piece across the optically active area ( 40 ) and the optically passive area ( 42 ) extends. [14] Method for manufacturing an optoelectronic device ( 10 ), in which – a transparent carrier ( 12 ) is provided, – an optically active area ( 40 ) and an optically passive area ( 42 ) be trained, – in the optically active area ( 40 ) an optoelectronic layer structure is formed by a transparent first electrode ( 20 ) the optoelectronic layer structure over the substrate ( 12 ) is trained, – an optically functional layered structure ( 22 ) the optoelectronic layer structure above the first electrode ( 20 ) is trained, a second electrode ( 23 ) the optoelectronic layer structure above the optically functional layer structure ( 22 ) is trained, whereby on one of the carrier's ( 12 ) opposite side of the optically functional layer structure ( 22 ) a mirror area ( 44 ) is trained, who is at least trained by the carrier ( 12) is viewed from a mirrored position, and – in the optically passive area ( 42 ) a mirror layer over the substrate ( 12 ) is trained, which at least by the carrier ( 12 ) is formed in a mirrored manner when viewed from the outside. [15] Mirror device comprising a mirror surface for viewing a mirror image and a luminous surface for emitting light, wherein the mirror device incorporates the optoelectronic component ( 10 ) according to one of claims 1 to 9 or 11 to 13 and wherein the mirror surface is separated from the optically passive area ( 42 ) is formed and the luminous area is separated from the optically active area ( 40 ) is formed.

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