Semiconductor device with a field effect transmitter

The semiconductor device with a ridge-shaped body region and specific doping profile addresses the challenge of achieving low on-resistance and high voltage blocking, enhancing performance in lateral power transistors for automotive and industrial electronics.

DE102015017409B4Active Publication Date: 2026-05-28INFINEON TECHNOLOGIES AG
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Patent Information

Application Number
DE102015017409
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Filing Date
2015-04-29
Publication Date
2026-05-28
Estimated Expiration
2035-04-29

AI Technical Summary

Technical Problem

Existing semiconductor devices struggle to achieve low on-resistance while maintaining high voltage blocking capability, particularly in lateral power transistors used in automotive and industrial electronics.

Method used

A semiconductor device with a field-effect transistor configuration, featuring a body region shaped as a ridge and a specific doping profile, which includes a buried layer and well region, allows for a larger effective channel width without increasing lateral dimensions, reducing leakage currents and enhancing breakdown voltage.

Benefits of technology

The solution provides a semiconductor device with improved low-resistance and high-voltage blocking capabilities, suppressing short-channel effects and reducing parasitic bipolar transistors, suitable for low-voltage power switching applications.

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Abstract

Semiconductor device (1) with a field-effect transistor (200) in a semiconductor substrate (100) having a first main surface (110), comprising: a source area (201) of a second conductivity type, a drain area (205) of the second conductivity type, a body area (220) of a first conductivity type, and a gate electrode (210) on the body region (220), wherein the gate electrode (210) is designed to control the conductivity of a channel formed in the body region (220), wherein the gate electrode (210) is provided in gate trenches (212), wherein the body region (220) is arranged along a first direction between the source region (201) and the drain region (205), the first direction being parallel to the first main surface, the body region (220) having the shape of a ridge extending along the first direction, and the body region being adjacent to the source region (201) and the drain region (205), wherein the semiconductor device (1) further comprises a source contact (202) and a body contact (225), the source contact (202) being electrically connected to a source terminal (271), the body contact (225) being electrically connected to the source terminal (271) and to the body region (220), and further comprising a source connection part (201b) of the second conductivity type, which is arranged in contact with the body region (220) and further extends into the source region (201), wherein a part of the source connection part (201b) extends in the first direction under at least a part of the gate trench (212), and wherein source connection parts (201b) assigned to adjacent gate trenches (212) are spaced apart from each other.
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Citation Information

Patent Citations

  • Semiconductor device and method for manufacturing a semiconductor device

    DE102013113284A1