arrangement

Abstract

Arrangement (10)- comprising at least one semiconductor device (15, 300) and a heat sink (20),- wherein the semiconductor device (15, 300) is arranged on the heat sink (20),- wherein the heat sink (20) is configured to dissipate heat from the semiconductor device (15, 300),- wherein the heat sink (20) comprises a material,- wherein the material of the heat sink (20) is thermally conductive,- wherein the material comprises at least aluminium and silicon;- wherein the material of the heat sink (20) has a mass fraction of aluminium that is less than 40 percent and at least greater than 5 percent;- wherein the material of the heat sink (20) has a mass fraction of silicon that is greater than 60 percent and at least less than 95 percent.

Description

[0001] The invention relates to an arrangement according to claim 1.

[0002] Arrangements with a laser chip and a heat sink are known, wherein the laser diode is arranged on the heat sink and the heat sink is designed to dissipate heat from the laser chip.

[0003] The object of the invention is to provide an improved arrangement.

[0004] This problem is solved by means of an arrangement according to claim 1. Advantageous embodiments are specified in the dependent claims.

[0005] It was recognized that an improved arrangement can be provided by comprising at least one semiconductor device and a heat sink, wherein the semiconductor device is arranged on the heat sink, and the heat sink is configured to dissipate heat from the semiconductor device. The heat sink comprises a material, wherein the heat sink material is thermally conductive. The heat sink material comprises aluminum and silicon.

[0006] This design of the heat sink has the advantage of being particularly cost-effective to manufacture. Furthermore, the heat sink made of this material exhibits lower temperature dependence in its thermal conductivity. This is especially advantageous at higher temperatures, as the heat sink then exhibits particularly high thermal conductivity.

[0007] It is particularly advantageous if the heat sink is electrically and thermally conductive.

[0008] In another embodiment, the material of the heat sink has a mass fraction of aluminium that is less than 40 percent, in particular less than 25 percent, and at least greater than 10 percent, in particular greater than 15 percent.

[0009] In a further embodiment, the material of the heat sink has a mass fraction of silicon that is greater than 60 percent, in particular greater than 75 percent and at least less than 95 percent, preferably less than 90 percent, in particular less than 85 percent.

[0010] In another embodiment, the heat sink has a thickness of a certain value, wherein the thickness value is in the range of 50 µm to 300 µm, particularly in the range of 80 µm to 120 µm. However, the heat sink can also have a thickness of 100 µm.

[0011] In another embodiment, the thermal conductivity of the heat sink, particularly in a temperature range of 20 to 130°C, has a value in the range of 80 W / mK to 350 W / mK, particularly from 190 W / mK to 300 W / mK.

[0012] In a further embodiment, the semiconductor device has a first contact and a second contact. An electrical insulating layer is arranged between the semiconductor device and the heat sink. The electrical insulating layer has at least one recess. An electrical connection is arranged in the recess, which electrically connects the second contact to the heat sink. In this way, the number of electrical connections in the arrangement can be reduced, making the arrangement particularly simple and cost-effective to manufacture. Furthermore, the complexity of the arrangement is reduced.

[0013] In another embodiment, a connecting layer is arranged between the electrical insulating layer and the semiconductor device, wherein the connecting layer mechanically connects the semiconductor device to the electrical insulating layer.

[0014] In a further embodiment, the arrangement comprises a first contact conductor, at least one second contact conductor, and a housing with a housing wall. The first and second contact conductors are spaced apart from each other. The first and second contact conductors pass through the housing wall and are electrically insulated from each other by the housing wall. The heat sink is located at least partially between the first and second contact conductors. The heat sink is electrically connected to the first contact conductor.

[0015] In another embodiment, the semiconductor device is configured as an optoelectronic semiconductor device. Advantageously, the optoelectronic semiconductor device comprises at least one laser chip or one LED chip. The laser chip or the LED chip is configured to provide electromagnetic radiation with a beam direction.

[0016] In a further embodiment, the arrangement comprises a photodiode with a first photodiode contact and a second photodiode contact, as well as a third contact conductor that passes through the housing wall. The first photodiode contact is electrically connected to the first contact of the semiconductor device, and the second photodiode contact is electrically connected to the third contact conductor.

[0017] In a further embodiment, a heat spreader is provided. The heat spreader preferably has a greater extent than the semiconductor device in at least one direction of extension. The heat spreader is arranged between the semiconductor device and the heat sink and is designed to conduct heat from the semiconductor device to the heat sink.

[0018] In another embodiment, the heat spreader comprises at least one of the following materials: silicon carbide (SiC), aluminum nitride (AlN), copper (Cu), diamond, boron nitride, copper-tungsten (CuW).

[0019] In another embodiment, the arrangement includes an optical device. The optical device is arranged on the heat sink and mechanically and thermally coupled to the heat sink. The optical device is designed to at least partially change the direction of a light beam.

[0020] In a further embodiment, the arrangement comprises at least one further optoelectronic semiconductor device, wherein the further optoelectronic semiconductor device comprises at least one further laser chip or one further LED chip, wherein the further laser chip or the further LED chip is configured to provide further electromagnetic radiation, wherein the semiconductor device and the further optoelectronic semiconductor device are arranged together on the heat sink.

[0021] In another embodiment, the additional optoelectronic semiconductor component is arranged laterally offset from the beam direction of the semiconductor component. Alternatively, the additional optoelectronic semiconductor component is arranged opposite the semiconductor component in the beam direction of the semiconductor component.

[0022] The properties, features and advantages of this invention described above, as well as the manner in which they are achieved, will become clearer and more easily understood in connection with the following description of the exemplary embodiments, which are explained in more detail in conjunction with the drawings, wherein

[0023] Fig. 1 a top view of an arrangement according to a first embodiment;

[0024] Fig. 2 a side view of the in Fig. 1. Arrangement shown;

[0025] Fig. 3 a diagram of the thermal conductivity of a heat sink in the Fig. 1 and Fig. 2 arrangement shown;

[0026] Fig. 4 a side view of an arrangement according to a second embodiment;

[0027] Fig. 5 and Fig. 6 side views of a constructive design of the in Fig. 4 arrangement shown;

[0028] Fig. 7 a top view of the in the Fig. 5 and Fig. 6 shown arrangement;

[0029] Fig. 8 an excerpt of the in Fig. 7 arrangement shown;

[0030] Fig. 9 a top view of an arrangement according to a third embodiment;

[0031] Fig. 10 a side view of the in Fig. 9 shown arrangement;

[0032] Fig. 11 a top view of an arrangement according to a fourth embodiment;

[0033] Fig. 12 a side view of the in Fig. 11 shown arrangement;

[0034] Fig. 13 a top view of an arrangement according to a fifth embodiment;

[0035] Fig. 14 a schematic representation of a side view of the in Fig. 13 shown arrangement;

[0036] Fig. 15 a top view of an arrangement according to a sixth embodiment;

[0037] Fig. 16 a side view of the in Fig. 15 shown arrangement;

[0038] Fig. 17 a schematic representation of a side view of an arrangement according to a seventh embodiment;

[0039] Fig. 18 a top view of an arrangement according to an eighth embodiment;

[0040] Fig. 19 a schematic representation of a top view of an arrangement according to a ninth embodiment; and

[0041] Fig. 20 a side view of the in Fig. 19 shown arrangement show.

[0042] Fig. Figure 1 shows a top view of an arrangement 10 according to a first embodiment. Fig. 2 shows a side view of the in Fig. 1 arrangement shown 10 The arrangement 10a semiconductor component 15 and a heat sink 20 on. The semiconductor component 15 is an example of an optoelectronic semiconductor component 15 trained. The semiconductor device 15 is on the heat sink 20 arranged.

[0043] The optoelectronic semiconductor device 15 includes at least one laser chip 25 The laser chip 25 is formed to emit electromagnetic radiation in the form of a light beam 30 , which in this embodiment is designed as a laser beam, to provide a beam direction. The laser chip 25 is designed as an edge emitter, so that the laser chip 25 emitted light beam 30 In this embodiment, for example, largely parallel to a top surface 35 the heat sink 20 runs and laterally out of the optoelectronic semiconductor component15 is emitted. Of course, it is also conceivable that the light beam 30 obliquely or perpendicular to the top 35 the heat sink 20 is emitted. Alternatively, it is also conceivable that the optoelectronic semiconductor component 15 includes an LED chip, the LED chip directing the light beam 30 provides the beam direction.

[0044] When the optoelectronic semiconductor device is activated 15 The optoelectronic semiconductor component heats up 15 The optoelectronic semiconductor device 15 is due to the arrangement on the heat sink 20 thermally with the heat sink 20 coupled. The heat sink 20 This conducts heat away from the optoelectronic semiconductor component. 15 off and ensures that the optoelectronic semiconductor component 15When activated, it is operated below a maximum operating temperature, thus preventing overheating of the optoelectronic semiconductor component. 15 is avoided.

[0045] The heat sink 20 It features a material that is both electrically and thermally conductive. This material comprises at least aluminum and silicon, which together form an alloy. It is particularly advantageous if the material of the heat sink... 20 The material of the heat sink has a mass fraction of aluminum that is less than 40 percent, in particular less than 25 percent, and at least greater than 5 percent, preferably greater than 10 percent, in particular greater than 15 percent. 20 Furthermore, it advantageously has a mass fraction of silicon that is greater than 60 percent, in particular greater than 75 percent and at least less than 95 percent, preferably less than 90 percent, in particular less than 85 percent.

[0046] Due to this material composition, the heat sink 20 a thermal conductivity λ which, in a temperature range of 20°C to 130°C, has a value in the range of 180 W / mK to 350 W / mK, in particular from 190 W / mK to 300 W / mK.

[0047] A particularly compact design of the arrangement 10 and at the same time good cooling of the optoelectronic semiconductor component 15 This ensures that the heat sink 20 a thickness d1 in a direction perpendicular to the top surface 35 with a value in the range of 50 to 300 µm, particularly in the range of 80 to 120 µm. It is especially advantageous if the thickness d1 of the heat sink 20 100 µm.

[0048] Fig. Figure 3 shows a diagram of thermal conductivity λ in W / (m·K) plotted against temperature T in degrees Celsius. The diagram contains several graphs. 50 , 55 , 60 , 65 depicted. The first graph shows... 50 a thermal conductivity λ of the in the Fig. 1 and Fig. 2 explained heat sink 20 A second graph 55 shows the thermal conductivity λ of copper (Cu). A third graph 60 shows the thermal conductivity λ of silicon carbide (SiC) and a fourth graph 65 shows the thermal conductivity of aluminum nitride (AlN). All graphs 50 , 55 , 60 , 65 are plotted against temperature T in a temperature range of approximately 20°C to 130°C. The material of the heat sink 20 (first graph) 50 ) exhibits a higher thermal conductivity λ in some sections compared to aluminum nitride (see fourth graph). 65) on. Starting from a structurally identical arrangement 10 can thereby by means of the in Fig. 1 and Fig. 2 heat sinks shown 20 more heat from the optoelectronic semiconductor component 15 be dissipated as if the heat sink 20 It uses aluminum nitride as a material. This results in the optoelectronic semiconductor component 15 exhibits a reduced operating temperature. Furthermore, the reduced operating temperature extends the service life of the optoelectronic semiconductor component. 15 increased. Furthermore, the material (AlSi) of the heat sink is 20 more cost-effective than aluminium nitride (see fourth graph).

[0049] Although the thermal conductivity λ of the material of the heat sink 20 lower than that of copper (see second graph). 55 ) and silicon carbide (see third graph) 60 ), however, the material of the heat sink20 (Aluminium, silicon) are more cost-effective than copper and silicon carbide, so the arrangement 10 is particularly cost-effective to manufacture. Fig. 4 shows a side view of an arrangement 10 according to a second embodiment. The arrangement 10 is similar to the one in the Fig. 1 and Fig. 2 arrangement shown 10 trained. In contrast, the order indicates 10 additionally, an electrically conductive carrier 66 on. On the carrier 66 is by means of a first bonding layer 100 the heat sink 20 bonded by material adhesion. The first bonding layer 100 is located on the underside of the heat sink 20 between the heat sink 20 and the carrier 66 arranged. The first connecting layer 100 It may, for example, have an electrically conductive solder.

[0050] In contrast, the heat sink is located on the top side. 20 , i.e., between the optoelectronic semiconductor device 15 and the heat sink 20 , an electrical insulating layer 105 provided. On the electrical insulating layer 105 There is a second bonding layer on the top side. 110 arranged, the optoelectronic semiconductor component 15 bonded to the electrical insulating layer 105 mechanically, electrically, and thermally connected. The electrical insulating layer 105 is materially bonded to the heat sink 20 connected. The electrical insulating layer 105 is designed to electrically heat the heat sink 20 from the optoelectronic semiconductor device 15 to isolate. The first and / or second bonding layer 100 , 110 may contain electrically conductive solder and / or an adhesive.

[0051] It is pointed out that, alternatively, the connection layer 100 , 110 It may be designed differently and, for example, use an adhesive for the material-bonded connection of the heat sink. 20 with the carrier 66 and / or the optoelectronic semiconductor device 15 with the heat sink 20 It may exhibit certain characteristics. It is also conceivable that the electrical insulating layer 105 The optoelectronic semiconductor component is materially bonded. 15 with the heat sink 20 connects.

[0052] The optoelectronic semiconductor device 15 includes initial contact 115 and a second contact 120 The first contact 115 of the optoelectronic semiconductor device 15 is configured as an anode. The second contact 120 is configured as a cathode. The first contact 115 is connected to the second bonding layer 110connected. Through the electrical insulation of the second connection layer 110 opposite the heat sink 20 is also the first electrical contact 115 electrically opposite the heat sink 20 through the electrical insulating layer 105 isolated.

[0053] The second bonding layer 110 and the electrical insulating layer 105 have a recess 125 open. In the recess 125 is a first electrical connection 130 arranged. The first electrical connection 130 is connected to the heat sink 20 and with the second contact 120 of the optoelectronic semiconductor device 15 connected. The first electrical connection 130 electrically connects the heat sink 20 with the second contact 120 The first electrical connection 130It can, for example, serve as a bond wire or as a connection pin of the optoelectronic semiconductor component. 15 be trained.

[0054] The carrier 66 It can in turn be electrically connected to other components not shown, i.e., to a control unit.

[0055] Fig. 5 and Fig. Figure 6 shows side views of a constructive design of the Fig. 4 arrangement shown 10 . Fig. Figure 7 shows a top view of the [unclear] in the Fig. 4 and Fig. 5 shown arrangement 10 and Fig. Figure 8 shows a section of the Fig. 6 shown arrangement 10 The following are Fig. 5 to Fig. 8 explained together.

[0056] The arrangement 10 includes a housing 70 with an exemplary circularly shaped housing wall 75 and a housing bridge 80The housing wall is involved. 75 Exemplary flat design. Of course, it is also conceivable that the housing wall 75 has different cross-sections or is curved. The housing web 80 is connected to the housing wall 75 connected and is essentially perpendicular to the housing wall 75 arranged. The housing web extends 80 essentially perpendicular to the housing wall 75 away. The casing wall 75 is designed to be electrically conductive.

[0057] The arrangement 10 includes an initial contact conductor 85 , a second contact conductor 90 and a third contact conductor 95 The contact ladder 85 , 90 , 95 are electrically conductive. The contact conductors 85 , 90 , 95 are through the housing wall 75guided and protrude beyond the housing wall on both sides 75 stand out. Furthermore, the contact lines are 85 , 90 , 95 arranged at a distance from each other, with the contact conductors 85 , 90 , 95 through the housing wall 75 Firstly, they must be mechanically fastened. The contact conductors 85 , 90 , 95 are electrically insulated from each other. The contact conductors 85 , 90 , 95 can be used with a control unit to operate the arrangement 10 be connected.

[0058] The heat sink 20 is between the first contact conductor 85 and the third contact person 95 top side of the second contact conductor 90 arranged. The heat sink 20 can be mechanically connected to the second contact conductor 90 be connected. The second contact line 90 is on the case bridge 80arranged. Furthermore, the second contact conductor 90 electrically with the housing wall 75 connected. The housing wall 75 It can in turn be electrically connected to an earthing system.

[0059] The first contact 115 of the optoelectronic semiconductor device 15 is an example of the underside of the optoelectronic semiconductor component 15 arranged. The first contact 15 is electrically connected via the first electrical connection 130 with the heat sink 20 connected. The heat sink 20 is in turn electrically connected to the second contact conductor 20 tied together.

[0060] The arrangement 10 also includes a photodiode 170 The photodiode 170 is on the housing wall 75 arranged. This includes a subside. 182 the photodiode 170 mechanically with the housing wall 75connected. The photodiode 170 is arranged in such a way that the photodiode 170 at least one through the optoelectronic semiconductor device 15 The photodiode can detect the emitted part of the light beam during activated operation (not shown). 170 includes a first photodiode contact 175 and a second photodiode contact 180 The first photodiode contact 175 The second photodiode contact is configured as the cathode. 180 is designed as the anode.

[0061] The first photodiode contact 175 is on a subside 182 the photodiode 170 arranged. The second photodiode contact 180 is an example of a top surface 181 the photodiode 170 arranged. The top 181 the photodiode 170 is on a downward side 182arranged on the opposite side. The first photodiode contact 175 is electrically connected to the housing wall 75 connected. The second photodiode contact 180 is by means of a second electrical connection 186 with the third contact conductor 95 electrically connected. The second electrical connection 186 is designed as an example of a bond wire.

[0062] The first contact person 85 is by means of a third electrical connection 190 , which in this embodiment is exemplary designed as a bond wire, electrically connected to the second contact 120 of the optoelectronic semiconductor device 15 tied together.

[0063] Fig. Figure 9 shows a top view of an arrangement 10 according to a third embodiment. Fig. Figure 10 shows a side view of the [unclear text] Fig. 9 shown arrangement 10 The arrangement 10is similar to the one in the Fig. 1, Fig. 2 and Fig. 4 shown configuration of the arrangement 10 trained. In contrast, the arrangement includes 10 additionally a heat spreader 200 The heat spreader 200 points at least in one direction of extension of the optoelectronic semiconductor device 15 a greater extent than the optoelectronic semiconductor device 15 In this embodiment, for example, the extension is parallel to the top surface. 35 the heat spreader 200 wider than the optoelectronic semiconductor device 15 trained. The heat spreader 200 is between the optoelectronic semiconductor device 15 and the heat sink 20 arranged. The heat spreader is included. 200 It is designed to be thermally conductive and conducts heat away from the optoelectronic semiconductor component. 15to the heat sink 20 Furthermore, it is also conceivable that the heat spreader is electrically conductive. Due to its wider design, the heat spreader... 200 good heat distribution to the heat sink 20 ensured. The heat spreader 200 Advantageously comprising at least one of the following materials: silicon carbide (SiC), aluminum nitride (AlN), copper (Cu), diamond, copper-tungsten (CuW), boron nitride (BN).

[0064] Furthermore, the order includes 10 an optical facility 205 The optical setup 205 is on the heat sink 20 arranged and connected to the heat sink 20 mechanically connected. The optical device 205 This includes a focusing element. 210 a specially designed lens that focuses the light beam 30 at least partially captures and uses it as a directed beam of light 215focused on a predefined area. Alternatively, it is also conceivable that the focusing element 210 the light beam 30 modified in such a way that it is aligned parallel to the surface. Alternatively, it is also conceivable that, for example, the optical device... 205 the light beam 30 expands. It is also conceivable that the optical setup 205 is differently shaped and / or has multiple focusing elements.

[0065] Fig. Figure 11 shows a schematic representation of a top view of an arrangement. 10 according to a fourth embodiment. Fig. 12 shows a side view of the in Fig. 11 shown arrangement 10 The arrangement 10 is similar to the one in the Fig. 1 and Fig. 2 arrangement shown 10 trained. In contrast, the arrangement includes 10 in addition to the optoelectronic semiconductor component 15at least one more optoelectronic semiconductor device 300 In Fig. 11 are examples of two further optoelectronic semiconductor devices 300 shown. Of course, a different number of other optoelectronic semiconductor components are also possible. 300 be planned.

[0066] The other optoelectronic semiconductor device 300 includes another laser chip 305 The other laser chip 305 is designed to emit electromagnetic radiation in the form of a further light beam when activated 310 to provide a trained laser beam. In this embodiment, the optoelectronic semiconductor component 15 and the further optoelectronic semiconductor device 300 laterally offset to the direction of the light beam 30 of the optoelectronic semiconductor device 15arranged. The light beam essentially runs along this path. 30 of the optoelectronic semiconductor device 15 and the further beam of light 310 of the further optoelectronic semiconductor device 300 parallel to each other.

[0067] The other optoelectronic semiconductor device 300 and the optoelectronic semiconductor device 15 are together on the heat sink 20 arranged so that the arrangement 10 can be trained particularly cost-effectively. The heat sink 20 This leads to the operation of the optoelectronic semiconductor components 15 , 300 Heat generated from the optoelectronic semiconductor components 15 , 300 so that they are reliably cooled and overheating by the heat sink is prevented. 20 the optoelectronic semiconductor devices 15 , 300 is avoided.

[0068] Furthermore, it is also conceivable that the electrical contacting, as in Fig. 4 explains, also referring to the ones in the Fig. 11 and Fig. 12 shown arrangement 10 is applied so that the further optoelectronic semiconductor component 300 with the heat sink 20 is electrically connected.

[0069] As an alternative to the above-described design of the further optoelectronic semiconductor device 300 It is also conceivable that the further optoelectronic semiconductor component 300 includes another LED chip, wherein the additional LED chip is designed to project the additional light beam 310 to provide.

[0070] Fig. Figure 13 shows a top view of an arrangement 10 according to a fifth embodiment and Fig. 14 a side view of the in Fig. 13 shown arrangement 10 The arrangement 10 is similar to the one in the Fig. 11 and Fig. 12 shown arrangement 10 trained. In contrast, the optoelectronic semiconductor component 15 configured as a laser diode array and comprises several laser diodes 400 , 405 , 410 , each one as a light beam 415 , 420 , 425 provide a trained laser beam. The light beams 415 , 420 , 425 They run essentially parallel, and for example parallel, to the top side. 35 the heat sink 20 By providing multiple laser diodes 400 , 405 , 410 exhibits the optoelectronic semiconductor device 15 an increased heat generation, which reliably escapes from the optoelectronic semiconductor component 15 through the heat sink 20 The heat is dissipated due to the improved conductivity compared to aluminum nitride, thus preventing overheating of the laser diodes.400 , 405 , 410 This is reliably avoided when activated.

[0071] Fig. Figure 15 shows a schematic representation of a top view of an arrangement. 10 according to a sixth embodiment. Fig. 16 shows a side view of the in Fig. 15 shown arrangement 10 The arrangement 10 is similar to the one in the Fig. 9 and Fig. 10 shown arrangement 10 trained. In contrast, the heat spreader is used. 200 omitted, so that the optoelectronic semiconductor component 15 directly on the heat sink 20 It is attached. This design is particularly cost-effective.

[0072] Fig. Figure 17 shows a schematic representation of a side view of an arrangement 10 according to a seventh embodiment. The arrangement 10 is a combination of the in the Fig. 11, Fig. 12, Fig. 15 and Fig. 16 explained orders 10 The arrangement 10 includes the optoelectronic semiconductor device 15 and the further optoelectronic semiconductor device 300 . These are optoelectronic semiconductor components. 15 and the further optoelectronic semiconductor device 300 together on the heat sink 20 arranged. The further optoelectronic semiconductor component 300 is in the direction of the light beam 30 of the optoelectronic semiconductor device 15 opposite the optoelectronic semiconductor device 15 arranged. Between the two optoelectronic semiconductor components 15 , 300 is on the heat sink 20 the optical setup 205 arranged, which in the embodiment is a prism 450 includes the optical setup 205 can also include the one in the Fig. 9 and Fig. 10 explained focusing elements 210 e.g. above the prism 460 and / or between the optoelectronic semiconductor device 15 , 200 and the prism 450 exhibit.

[0073] When the optoelectronic semiconductor device is activated 15 and furthermore, optoelectronic semiconductor components 300 the optoelectronic semiconductor components 15 , 300 the light beam 30 , 310 from, whereby the optoelectronic semiconductor components 15 , 300 each in the direction of the oppositely arranged other optoelectronic semiconductor component 15 , 300 rays. The prism 450 deflects it essentially parallel to the upper surface 35 passing light beam 30 , 310 for example by 90° so that the light beam 30 , 310from the order 10 can be radiated away.

[0074] Fig. 18 shows a side view of an arrangement 10 according to a seventh embodiment. The arrangement 10 is similar to the one in the Fig. 15 and Fig. 16 explained the design of the arrangement 10 trained. In contrast, the optical equipment includes 205 several mirror elements 500 , 505 and at least one converter element 510 .

[0075] This includes a first mirror element 500 Adjacent to the side of the converter element 510 arranged. A second mirror element 505 is on the underside of the converter element 510 and thus between the converter element 510 and the heat sink 20 arranged.

[0076] The converter element 510This includes, for example, a ceramic layer and / or a matrix with scattering particles or a conversion matrix. Alternatively, it is also conceivable that the converter element 510 additionally or alternatively, it has a ceramic layer and / or a matrix with scattering particles. The optical device 205 is in the light beam 30 of the optoelectronic semiconductor device 15 arranged. The light beam shines in this way. 30 laterally into the optical setup 205 inside.

[0077] The light beam 30 is inserted laterally into the converter element 510 as primary radiation. In this embodiment, the converter element, for example, converts 510 at least a first part of the primary radiation of the light beam 30 into secondary radiation whose wavelength is longer than the wavelength of the light beam. 30 The converter element heats up in the process. 510The converter element 510 It emits secondary radiation in all directions. The secondary radiation and an unconverted second component of the primary radiation are reflected by the mirror elements. 500 , 505 reflected, so that an optical device 205 emitted light 515 essentially perpendicular to the top 35 the heat sink 20 is emitted.

[0078] By the arrangement 10 of the optoelectronic semiconductor device 15 and the optical setup 205 on the heat sink 20 It is ensured that the optical setup is also 205 , in particular the converter element 510 reliably through the heat sink 20 It is cooled, thus preventing overheating of the optical equipment. 205 This is avoided. This ensures reliable aging of the converter element. 510 reduced.

[0079] Fig. Figure 19 shows a schematic representation of a top view of an arrangement. 10 according to a ninth embodiment and Fig. 20 a side view of the in Fig. 19 shown arrangement 10 The arrangement 10 is essentially a combination of the ones in the Fig. 9, Fig. 10 and Fig. 18 different embodiments of the arrangements shown 10 The optical setup includes... 205 that in the Fig. 9 and Fig. 10 focusing elements shown 210 and that in Fig. 18 converter elements shown 510 and the mirror elements 500 , 505 The focusing element 210 is between the converter element 510 and the optoelectronic semiconductor device 15 on the heat sink 20 arranged. Furthermore, between the optoelectronic semiconductor component15 and the heat sink 20 the in the Fig. 9 and Fig. 10 explained heat spreaders 200 planned.

[0080] The optoelectronic semiconductor device 15 emits the light beam 30 The focusing element 210 focuses the light beam 30 to the directed beam of light 215 , which is in the converter element 510 enters. The converter element 510 uses the directed light beam 215 as primary radiation and converts at least the first part of the primary radiation, as already mentioned in Fig. 18 explains, in secondary radiation, which either directly passes through the converter element. 510 emitted upwards or via the mirror elements 500 , 505 is reflected upwards. The unconverted second component of the directed light beam. 215 is via the mirror elements 500 , 505reflected upwards.

[0081] By the arrangement 10 of the focusing element 210 and the converter element 510 as well as the mirror elements 500 , 505 on the heat sink 20 can be used in addition to the operation of the optoelectronic semiconductor component 15 The heat generated also includes heat from the optical equipment. 205 The heat must be properly dissipated to prevent overheating of the optical system. 205 be avoided.

[0082] Although the invention has been illustrated and described in detail by the preferred embodiment, the invention is not limited by the disclosed examples and other variations can be derived from them by a person skilled in the art without departing from the scope of protection of the invention. In particular, it is pointed out that the examples in the Fig. 1 to Fig.The 20 different embodiments described can also be combined in other ways. Reference symbol list 10 Arrangement 15 optoelectronic semiconductor device 20 heat sinks 25 laser chips 30 light beams 35 Top 50 first graph 55 second graph 60 third graph 65 fourth graph 66 carriers 70 cases 75 Housing wall 80 Case bridge 85 first contact person 90 second contact conductor 95 third contact person 100 first bonding layer 105 electrical insulating layer 110 second bonding layer 115 first contact 120 second contact 125 recess 130 first electrical connection 170 Photodiode 175 first photodiode contact 180 second photodiode contact 181 Top side of the photodiode 182 Underside of the photodiode 186 second electrical connection 190 third electrical connection 200 heat spreaders 205 optical equipment 210 focusing element 215 directed light beam 300 additional optoelectronic semiconductor components 305 additional laser chips 310 additional light beam 400 laser diode 405 Laser diode 410 laser diode 415 Light beam 420 light beam 425 Light beam 450 prism 500 first mirror element 505 second mirror element 510 converter element 515 Light emitted from the converter element d1 Thickness of the heat sink

Claims

[1] Arrangement ( 10 ) – comprising at least one semiconductor component ( 15 , 300 ) and a heat sink ( 20 ), – where the semiconductor device ( 15 , 300 ) on the heat sink ( 20 ) is arranged, – where the heat sink ( 20 ) is formed, heat from the semiconductor device ( 15 , 300 to be paid, – where the heat sink ( 20 ) has a material – where the material of the heat sink ( 20 ) is thermally conductive, – where the material contains at least aluminium and silicon. [2] Arrangement ( 10 ) according to claim 1, wherein the heat sink ( 20 ) is electrically and thermally conductive. [3] Arrangement ( 10 ) according to claim 1 or 2, wherein the material of the heat sink ( 20) has a mass fraction of aluminium that is less than 40 percent, in particular less than 25 percent and at least greater than 5 percent, preferably greater than 10 percent, in particular greater than 15 percent. [4] Arrangement ( 10 ) according to one of claims 1 to 3, wherein the material of the heat sink ( 20 ) has a mass fraction of silicon that is greater than 60 percent, in particular greater than 75 percent and at least less than 95 percent, preferably less than 90 percent, in particular less than 85 percent. [5] Arrangement ( 10 ) according to any one of claims 1 to 4, – where the heat sink ( 20 ) has a thickness (d1) with a value, – wherein the value of the thickness (d1) lies in a range of 50 µm to 300 µm, in particular in a range of 80 µm to 120 µm, – or where the heat sink ( 20 ) is 100 μm thick. [6] Arrangement ( 10) according to one of claims 1 to 5, wherein a thermal conductivity (λ) of the heat sink ( 20 ) especially in a temperature range of 20°C to 130°C, exhibits a value in the range of 180 W / mK to 350 W / mK, particularly from 190 W / mK to 300 W / mK. [7] Arrangement ( 10 ) according to any one of claims 1 to 6, – where the semiconductor device ( 15 , 300 ) a first contact ( 115 ) and a second contact ( 120 ) shows, – wherein between the semiconductor device ( 15 , 300 ) and the heat sink ( 20 ) an electrical insulating layer ( 105 ) is arranged, – wherein the electrical insulating layer ( 105 ) at least one recess ( 125 ) shows, – involving an electrical connection ( 130 ) in the recess ( 125 ) is arranged, which makes the second contact ( 120) electrically connected to the heat sink ( 20 ) connects. [8] Arrangement ( 10 ) according to claim 7, – where between the electrical insulating layer ( 105 ) and the semiconductor device ( 15 , 300 ) a bonding layer ( 110 ) is arranged, – wherein the bonding layer ( 110 ) the semiconductor device ( 15 , 300 ) mechanically with the electrical insulating layer ( 105 ) connects. [9] Arrangement ( 10 ) according to any one of claims 1 to 8, – having a first contact conductor ( 85 ), at least a second contact conductor ( 90 , 95 ) and a housing ( 70 ) with a housing wall ( 75 ), – where the first contact conductor ( 85 ) and the second contact conductor ( 90 , 95 are spaced apart from each other, – where the first contact conductor (85 ) and the second contact conductor ( 90 , 95 ) through the housing wall ( 75 ) guided and through the housing wall ( 75 are electrically insulated from each other, – whereby at least partially between the first contact conductor ( 85 ) and the second contact conductor ( 90 , 95 ) the heat sink ( 20 ) is arranged, – where the heat sink ( 20 ) with the first contact conductor ( 85 ) is electrically connected. [10] Arrangement ( 10 ) according to any one of claims 1 to 9, – where the semiconductor device is an optoelectronic semiconductor device ( 15 , 300 ) is trained, – advantageously, the optoelectronic semiconductor device ( 15 , 300 ) at least one laser chip ( 25 , 305 ) or includes an LED chip, – where the laser chip ( 25) or the LED chip is designed to emit electromagnetic radiation ( 30 , 310 ) to provide with a beam direction. [11] Arrangement ( 10 ) according to claim 9 or 10, – featuring a photodiode ( 170 ) with a first photodiode contact ( 175 ) and a second photodiode contact ( 180 ) and a third contact conductor ( 95 ), which passes through the housing wall ( 75 ) is led, – where the first photodiode contact ( 175 ) electrically with the first contact ( 115 ) of the semiconductor device ( 15 , 300 ) and the second photodiode contact ( 180 ) electrically with the third contact conductor ( 95 are connected. [12] Arrangement ( 10 ) according to any one of claims 1 to 11, – including a heat spreader ( 200 ) is planned, – whereby the heat spreader ( 200) preferably at least in one direction of extension of the semiconductor device ( 15 , 300 ) a larger extent than the semiconductor device ( 15 , 300 ) shows, – whereby the heat spreader ( 200 ) between the semiconductor device ( 15 , 300 ) and the heat sink ( 20 ) is arranged and designed to dissipate heat from the semiconductor device ( 15 , 300 ) to the heat sink ( 20 ) to forward. [13] Arrangement ( 10 ) according to claim 12, – whereby the heat spreader ( 200 ) in particular has at least one of the following materials: – Silicon carbide (SiC), – Aluminium nitride (AlN), – Copper (Cu) – Diamond – Boron nitrite (BN) – Copper-tungsten (CuW). [14] Arrangement ( 10 ) according to any one of claims 1 to 13, – including an optical device ( 205 ) on the heat sink ( 20 ) arranged and connected to the heat sink ( 20 ) is mechanically and thermally coupled, – whereby the optical setup ( 205 ) is designed to at least partially define the direction of a light beam ( 30 , 310 ) to change. [15] Arrangement ( 10 ) according to any one of claims 1 to 14, – comprising at least one additional optoelectronic semiconductor component ( 300 ), – wherein the further optoelectronic semiconductor device ( 300 ) at least one additional laser chip ( 305 ) or includes another LED chip, – where the further laser chip ( 305 ) or the additional LED chip is formed, emitting further electromagnetic radiation ( 310 ) to provide, – where the semiconductor device ( 15) and the further optoelectronic semiconductor device ( 300 ) together on the heat sink ( 20 are arranged. [16] Arrangement ( 10 ) according to claim 15, – wherein the further optoelectronic semiconductor device ( 300 ) laterally offset to the beam direction of the optoelectronic semiconductor device ( 15 ) is arranged, and / or – wherein the further optoelectronic semiconductor device ( 300 ) in the beam direction of the semiconductor device ( 15 ) opposite the semiconductor device ( 15 ) is arranged.

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