Overvoltage protection power semiconductor device

The surge protection power semiconductor chip with breakdown cells addresses the challenge of overvoltage protection in power devices by ensuring precise breakdown and efficient voltage regulation, enhancing high current and voltage handling capabilities.

DE102017012287B4Active Publication Date: 2026-05-28INFINEON TECH AUSTRIA AG
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Patent Information

Application Number
DE102017012287
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Filing Date
2017-03-20
Publication Date
2026-05-28
Estimated Expiration
2037-03-20

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Abstract

Power semiconductor device (1) comprising a semiconductor body coupled to a first load terminal (11) and a second load terminal (12), and comprising: a first doped region (151) of a second conductivity type, which is electrically connected to the first load terminal (11); an emitter region (109) of the second conductivity type, which is electrically connected to the second load terminal (12); a drift region (100) of a first conductivity type, arranged between the first doped region (151) and the emitter region (109); wherein the drift region (100) and the first doped region (151) enable the operation of the power semiconductor device (1) in a conducting state in which a load current is directed between the load terminals (11, 12) along a forward direction; a forward blocking state in which a forward voltage applied between the load terminals (11, 12) is blocked; and in a a reverse blocking state in which a reverse voltage applied between the load terminals (11, 12) is blocked; and a recombination zone (159) which is arranged at least within the first doped region (151), wherein the recombination zone (159): formed by silicon implantation and / or contains at least one of the following materials: argon (Ar), oxygen (O), helium (He), and / or molybdenum (Mo); or contains one of the following materials: molybdenum (Mo), palladium (Pd) and / or platinum (Pt); furthermore comprehensive: a first barrier region (152) of the second conductivity type at a lower doping concentration than the first doped region (151) and arranged in contact with the first doped area (151) and an isolation structure (16); and a second barrier region (153) of the first conductivity type at a higher doping concentration than the drift region (100) and which separates both the first doped region (151) and at least part of the first barrier region (152) from the drift region (100).
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Citation Information

Patent Citations

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